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公开(公告)号：US12287572B2
公开(公告)日：2025-04-29
申请号：US17232483
申请日：2021-04-16
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor： Cheng Hung Tsai , Sheng-Kang Yu , Shang-Chieh Chien , Heng-Hsin Liu , Li-Jui Chen
Abstract: A method includes: depositing a mask layer over a substrate; directing first radiation reflected from a central collector section of a sectional collector of a lithography system toward the mask layer according to a pattern; directing second radiation reflected from a peripheral collector section of the sectional collector toward the mask layer according to the pattern, wherein the peripheral collector section is vertically separated from the central collector section by a gap; forming openings in the mask layer by removing first regions of the mask layer exposed to the first radiation and second regions of the mask layer exposed to the second radiation; and removing material of a layer underlying the mask layer exposed by the openings.
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公开(公告)号：US12085865B2
公开(公告)日：2024-09-10
申请号：US18324889
申请日：2023-05-26
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor： Shih-Yu Tu , Chieh Hsieh , Shang-Chieh Chien , Li-Jui Chen , Heng-Hsin Liu
CPC classification number: G03F7/7085 , G03F7/70033 , G03F7/70916 , G03F7/70925 , H05G2/005 , H05G2/008
Abstract: An extreme ultraviolet (EUV) photolithography system detects debris travelling from an EUV generation chamber to a scanner. The photolithography system includes a detection light source and a sensor. The detection light source outputs a detection light across a path of travel of debris particles from the EUV generation chamber. The sensor senses debris particles by detecting interaction of the debris particles with the detection light.
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3.发明授权公开(公告)号：US12085860B2
公开(公告)日：2024-09-10
申请号：US17150685
申请日：2021-01-15
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor： Tai-Yu Chen , Heng-Hsin Liu , Li-Jui Chen , Shang-Chieh Chien
CPC classification number: G03F7/70033 , G03F7/7055 , G03F7/7085 , G03F7/70916 , G21K1/065 , H05G2/005 , H05G2/008
Abstract: A photolithography system utilizes tin droplets to generate extreme ultraviolet radiation for photolithography. The photolithography system irradiates the droplets with a laser. The droplets become a plasma and emit extreme ultraviolet radiation. An array of sensors sense the extreme ultraviolet radiation and charged particles emitted by the droplets. A control system analyses sensor signals from the sensors and adjusts plasma generation parameters responsive to the sensor signals.
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公开(公告)号：US11830754B2
公开(公告)日：2023-11-28
申请号：US17477450
申请日：2021-09-16
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor： Shang-Shiuan Deng , Fan-Chi Lin , Chueh-Chi Kuo , Li-Jui Chen , Heng-Hsin Liu
IPC: H01L21/683 , H01L21/687
CPC classification number: H01L21/6833 , H01L21/68721
Abstract: A method includes: positioning a wafer on an electrostatic chuck of an apparatus; and securing the wafer to the electrostatic chuck by: securing a first wafer region of the wafer to a first chuck region of the electrostatic chuck by applying a first voltage at a first time. The method further includes securing a second wafer region of the wafer to a second chuck region of the electrostatic chuck by applying a second voltage at a second time different from the first time; and processing the wafer by the apparatus while the wafer is secured to the electrostatic chuck.
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公开(公告)号：US11809083B2
公开(公告)日：2023-11-07
申请号：US17494558
申请日：2021-10-05
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor： Cheng-Hao Lai , Ming-Hsun Tsai , Hsin-Feng Chen , Wei-Shin Cheng , Yu-Kuang Sun , Cheng-Hsuan Wu , Yu-Fa Lo , Shih-Yu Tu , Jou-Hsuan Lu , Shang-Chieh Chien , Li-Jui Chen , Heng-Hsin Liu
CPC classification number: G03F7/70033
Abstract: Impurities in a liquefied solid fuel utilized in a droplet generator of an extreme ultraviolet photolithography system are removed from vessels containing the liquefied solid fuel. Removal of the impurities increases the stability and predictability of droplet formation which positively impacts wafer yield and droplet generator lifetime.
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Patent Agency Ranking
公开(公告)号：US20230132074A1
公开(公告)日：2023-04-27
申请号：US17691647
申请日：2022-03-10
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor： Wei-Chun Yen , Chi Yang , Sheng-Kang Yu , Shang-Chieh Chien , Li-Jui Chen , Heng-Hsin Liu
Abstract: In an embodiment, a method includes: heating a byproduct transport ring of an extreme ultraviolet source, the byproduct transport ring disposed beneath vanes of the extreme ultraviolet source; after heating the byproduct transport ring for a first duration, heating the vanes; after heating the vanes, cooling the vanes; and after cooling the vanes for a second duration, cooling the byproduct transport ring.
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公开(公告)号：US11442365B1
公开(公告)日：2022-09-13
申请号：US17459836
申请日：2021-08-27
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor： Yu-Kuang Sun , Ming-Hsun Tsai , Yu-Huan Chen , Wei-Shin Cheng , Cheng-Hao Lai , Hsin-Feng Chen , Chiao-Hua Cheng , Cheng-Hsuan Wu , Yu-Fa Lo , Shang-Chieh Chien , Li-Jui Chen , Heng-Hsin Liu
Abstract: A photolithography system utilizes tin droplets to generate extreme ultraviolet radiation for photolithography. The photolithography system irradiates the droplets with a laser. The droplets become energized and emit extreme ultraviolet radiation. A collector reflects the extreme ultraviolet radiation toward a photolithography target. The photolithography system isolates a source of droplets from oxidants to prevent the oxidation of the nozzle or the formation of metal oxides on the nozzle, both of which can adversely affect an ability of the nozzle to generate a sufficient amount of droplets and/or direct the droplets in a desired direction.
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公开(公告)号：US10061215B2
公开(公告)日：2018-08-28
申请号：US15182348
申请日：2016-06-14
Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
Inventor： Yung-Yao Lee , Jui-Chun Peng , Ho-Ping Chen , Heng-Hsin Liu
IPC: G03F9/00
CPC classification number: G03F9/7034 , G03F9/7084 , G03F9/7088
Abstract: In a method for fabricating a resist pattern, a substrate coated with a photo resist is loaded on a stage of an exposure apparatus. Underlying patterns are fabricated on the substrate. A surface slope of an exposure area on the substrate is measured. An alignment measurement is performed by detecting an alignment pattern formed in the underlying patterns. An alignment measurement result is corrected based on the measured surface slope. The substrate is aligned to a photo mask by using the corrected alignment measurement result. The photo resist is exposed to radiation passing through the photo mask to form patterns.
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公开(公告)号：US09766559B2
公开(公告)日：2017-09-19
申请号：US14066949
申请日：2013-10-30
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd
Inventor： Yung-Yao Lee , Ying-Ying Wang , Yi-Ping Hsieh , Heng-Hsin Liu
IPC: G03F9/00
CPC classification number: G03F9/7084 , G03F9/70 , G03F9/7007 , G03F9/7046 , G03F9/7088 , G03F2009/005
Abstract: An edge-dominant alignment method for use in an exposure scanner system is provided. The method includes the steps of: providing a wafer having a plurality of shot areas, wherein each shot area has a plurality of alignment marks; determining a first outer zone of the wafer, wherein the first outer zone includes a first portion of the shot areas along a first outer edge of the wafer; determining a scan path according to the shot areas of the first outer zone; and performing an aligning process to each shot area of the first outer zone according to the scan path and an alignment mark of each shot area of the first outer zone.
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公开(公告)号：US20150015870A1
公开(公告)日：2015-01-15
申请号：US13940335
申请日：2013-07-12
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor： Chun-Hsien Lin , Kuo-Hung Chao , Yi-Ping Hsieh , Yen-Di Tsen , Jui-Chun Peng , Heng-Hsin Liu , Jong-I Mou
CPC classification number: H01L22/12 , G01B11/24 , G01B13/065 , G01B2210/56 , G01N21/9501 , G03F7/00 , G03F7/70533 , G03F9/7003 , H01L22/20 , H01L22/30
Abstract: The present disclosure relates to a method of monitoring wafer topography. A position and orientation of a plurality first alignment shapes disposed on a surface of a wafer are measured. Wafer topography as a function of wafer position is modeled by subjecting the wafer to an alignment which simultaneously minimizes misalignment between the wafer and a patterning apparatus and maximizes a focus of radiation on the surface. A non-correctable error is determined as a difference between the modeled wafer topography and a measured wafer topography. A maximum non-correctable error per field is determined for a wafer, and a mean variation in the maximum non-correctable error across each field within each wafer of a lot is determined, both within a layer and across layers. These values are then verified against a set of statistical process control rules to determine if they are within a specification limit of the manufacturing process.
Abstract translation: 本公开涉及一种监测晶片形貌的方法。 测量设置在晶片表面上的多个第一对准形状的位置和取向。 作为晶片位置的函数的晶片形貌通过使晶片经受对准，同时最小化晶片和图案形成装置之间的未对准并使辐射在表面上的焦点最大化来建模。 不可校正误差被确定为模拟晶片形貌与测量的晶片形貌之间的差异。 对于晶片确定每场的最大不可校正误差，并且在层内和跨层中确定在批次的每个晶片内的每个场上的每个场的最大不可校正误差的平均变化。 然后根据一组统计过程控制规则验证这些值，以确定它们是否在制造过程的规格限制内。
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