公开(公告)号：US20050189012A1

公开(公告)日：2005-09-01

申请号：US10693914

申请日：2003-10-28

申请人： Takaharu Kondo ,  Noboru Toyama ,  Ryo Hayashi ,  Yuichi Sonoda ,  Tomonori Nishimoto ,  Satoru Yamada ,  Makoto Higashikawa ,  Masumitsu Iwata ,  Yusuke Miyamoto

发明人： Takaharu Kondo ,  Noboru Toyama ,  Ryo Hayashi ,  Yuichi Sonoda ,  Tomonori Nishimoto ,  Satoru Yamada ,  Makoto Higashikawa ,  Masumitsu Iwata ,  Yusuke Miyamoto

IPC分类号： C23C14/08 ,  C23C28/04 ,  C25D9/04 ,  H01L31/0224 ,  H01L31/0352 ,  H01L31/0392 ,  H01L31/18 ,  H01L31/00

CPC分类号： H01L31/0392 ,  C23C14/086 ,  C23C28/044 ,  C23C28/30 ,  C23C28/323 ,  C23C28/324 ,  C23C28/345 ,  C25D9/04 ,  H01L31/022425 ,  H01L31/03529 ,  H01L31/03921 ,  H01L31/18 ,  Y02E10/50

摘要： In a zinc oxide film having a plurality of texture constituents comprised of hills each having structure wherein a first surface borders on a second surface along one curved line, texture constituents in which first surfaces the hills of the texture constituents have have an average angle of inclination in a size within the range of from 30 degrees or more to 60 degrees or less and second surfaces have an average angle of inclination in a size within the range of from 10 degrees or more to 35 degrees or less account for at least a half of the plurality of texture constituents. This enables improvement in characteristics and durability of zinc oxide films used as optical confinement layers in photovoltaic devices, and also enables formation thereof at a low cost.

摘要翻译： 在具有多个纹理构成的氧化锌膜中，每个纹理组成由具有结构的山丘构成，其中第一表面沿着一个曲线边界在第二表面上，其中纹理成分的第一表面纹理成分的山丘具有平均倾角 尺寸在30度以上至60度以下的范围内，第二表面具有在10度以上至35度以下的尺寸的平均倾斜角，占至少一半以上 多个纹理成分。 这使得能够改善用作光电器件中的光限制层的氧化锌膜的特性和耐久性，并且还能够以低成本形成。

公开(公告)号：US07282132B2

公开(公告)日：2007-10-16

申请号：US10805323

申请日：2004-03-22

申请人： Masumitsu Iwata ,  Noboru Toyama ,  Ryo Hayashi ,  Yuichi Sonoda ,  Tomonori Nishimoto ,  Takaharu Kondo ,  Satoru Yamada ,  Yusuke Miyamoto

发明人： Masumitsu Iwata ,  Noboru Toyama ,  Ryo Hayashi ,  Yuichi Sonoda ,  Tomonori Nishimoto ,  Takaharu Kondo ,  Satoru Yamada ,  Yusuke Miyamoto

IPC分类号： C25D5/50

CPC分类号： H01L31/1884 ,  C25D9/04 ,  H01L31/056 ,  H01L31/1864 ,  Y02E10/52 ,  Y02P70/521

摘要： A film of zinc oxide electrochemically deposited from an aqueous solution is subjected to heat treatment at a temperature equal to or higher than 150° C. and equal to or lower than 400° C. in a nitrogen or inert gas atmosphere that contains oxygen, thereby obtaining a zinc oxide film that is low in electric resistance without impairing the light transmittance of the zinc oxide film.

摘要翻译： 在含有氧的氮气或惰性气体气氛中，将从水溶液电化学沉积的氧化锌薄膜在等于或高于150℃等于或低于400℃的温度下进行热处理，由此 获得电阻低而不损害氧化锌膜的透光率的氧化锌膜。

公开(公告)号：US20050150773A1

公开(公告)日：2005-07-14

申请号：US10999926

申请日：2004-12-01

申请人： Satoru Yamada ,  Noboru Toyama ,  Ryo Hayashi ,  Yuichi Sonoda ,  Tomonori Nishimoto ,  Masumitsu Iwata ,  Yusuke Miyamoto ,  Takaharu Kondo

发明人： Satoru Yamada ,  Noboru Toyama ,  Ryo Hayashi ,  Yuichi Sonoda ,  Tomonori Nishimoto ,  Masumitsu Iwata ,  Yusuke Miyamoto ,  Takaharu Kondo

IPC分类号： C25D9/08 ,  C23C28/00 ,  C23C28/04 ,  C25D5/34 ,  C25D5/48 ,  H01L21/288 ,  H01L31/04

CPC分类号： C25D5/48 ,  C23C28/00 ,  C25D5/34

摘要： A method for forming a deposition film from an aqueous solution by electrochemical reaction includes the steps of: forming the targeted deposition film under primary deposition conditions; replacing at least part of members in contact with the solution or removing deposit on surfaces of the members; and depositing a film under secondary deposition conditions. These steps are performed in that order. Then, the deposition film is formed again under the primary deposition conditions. In the method, the resulting deposition film exhibits desired characteristics even after maintenance of the deposition apparatus.

摘要翻译： 通过电化学反应从水溶液形成沉积膜的方法包括以下步骤：在初始沉积条件下形成目标沉积膜; 替换至少部分与溶液接触的构件或去除构件表面上的沉积物; 并在二次沉积条件下沉积薄膜。 这些步骤按照顺序执行。 然后，在初始沉积条件下再次形成沉积膜。 在该方法中，即使在保存沉积设备之后，所得到的沉积膜也显示出期望的特性。

公开(公告)号：US07112264B2

公开(公告)日：2006-09-26

申请号：US10606956

申请日：2003-06-27

申请人： Hidetoshi Tsuzuki ,  Noboru Toyama ,  Yasuyoshi Takai ,  Ryo Hayashi ,  Yuichi Sonoda ,  Masumitsu Iwata ,  Yusuke Miyamoto

发明人： Hidetoshi Tsuzuki ,  Noboru Toyama ,  Yasuyoshi Takai ,  Ryo Hayashi ,  Yuichi Sonoda ,  Masumitsu Iwata ,  Yusuke Miyamoto

IPC分类号： C25D5/02 ,  C25D7/06 ,  C25D17/00

CPC分类号： C25D7/0671 ,  C25D5/028

摘要： A plating apparatus includes a plating vessel for holding a plating bath containing at least metal ions, a conveying device for conveying a long conductive substrate and immersing the long conductive substrate in the plating bath, a facing electrode disposed in the plating bath so as to face one surface of the conductive substrate, a voltage application device for performing plating on the one surface of the conductive substrate by applying a voltage between the conductive substrate and the facing electrode, and a film-deposition suppression device fixedly disposed in the plating vessel so that at least a portion of the film-deposition suppression means is close to shorter-direction edges of the conductive substrate. At least a portion of the film-deposition suppression device close to the shorter-direction edges of the conductive substrate is conductive. By holding the conductive portion of the film-deposition suppression device and the conductive substrate at substantially the same potential, film deposition on the other surface of the conductive substrate is suppressed.

摘要翻译： 电镀装置包括用于保持至少含有金属离子的电镀槽的电镀容器，用于输送长导电性基板并将长导电性基材浸渍在电镀槽中的输送装置，设置在镀浴中的面对电极， 导电基板的一个表面，通过在导电基板和对置电极之间施加电压在导电基板的一个表面上进行电镀的电压施加装置和固定地设置在电镀槽中的成膜抑制装置，使得 至少一部分成膜抑制装置接近导电基板的短边缘。 靠近导电基板的短边缘的薄膜沉积抑制装置的至少一部分是导电的。 通过将成膜抑制装置的导电部分和导电基板保持在基本相同的电位，抑制导电基板的另一个表面上的成膜。

公开(公告)号：US6132817A

公开(公告)日：2000-10-17

申请号：US822607

申请日：1997-03-19

申请人： Nobuo Tokutake ,  Masafumi Sano ,  Ryo Hayashi ,  Makoto Higashikawa

发明人： Nobuo Tokutake ,  Masafumi Sano ,  Ryo Hayashi ,  Makoto Higashikawa

IPC分类号： H01L31/04 ,  H01L21/304 ,  H01L31/0392 ,  H01L31/052 ,  H01L31/076 ,  H01L31/20 ,  B05D3/10 ,  H05H1/24

CPC分类号： H01L31/076 ,  H01L31/03921 ,  H01L31/056 ,  H01L31/202 ,  H01L31/204 ,  H01L31/206 ,  Y02E10/52 ,  Y02E10/548 ,  Y02P70/521

摘要： A method of manufacturing a photoelectric transducer forms a functional film on a conductive substrate. The method comprises applying ultrasonic cleaning with a cleaning liquid containing water to the conductive substrate, then allowing the surface of the conductive substrate to contact purified water so as to import uniform oxidation and then forming the functional film thereon. The functional film is characterized in being formed with a metal layer as light-reflecting layer, a reflection enhancing layer, and a semiconductor photovoltaic device layer, prepared by a plasma CVD method, comprising a non-monocrystalline material containing silicon atoms as the matrix.

摘要翻译： 光电转换器的制造方法在导电性基板上形成功能膜。 该方法包括将超声波清洗用含有水的清洗液施加到导电性基材上，然后使导电性基材的表面与净化水接触，进行均匀氧化，然后在其上形成功能膜。 功能膜的特征在于，通过等离子体CVD法制备的金属层作为光反射层，反射增强层和半导体光电器件层，其包含含有硅原子作为基体的非单晶材料。

公开(公告)号：US06737123B2

公开(公告)日：2004-05-18

申请号：US10166759

申请日：2002-06-12

申请人： Takaharu Kondo ,  Masafumi Sano ,  Akira Sakai ,  Tadashi Sawayama ,  Ryo Hayashi ,  Shuichiro Sugiyama ,  Hiroyuki Ozaki ,  Yoshinori Sugiura

发明人： Takaharu Kondo ,  Masafumi Sano ,  Akira Sakai ,  Tadashi Sawayama ,  Ryo Hayashi ,  Shuichiro Sugiyama ,  Hiroyuki Ozaki ,  Yoshinori Sugiura

IPC分类号： C23C16505

CPC分类号： C23C16/517 ,  H01L21/02422 ,  H01L21/02425 ,  H01L21/02491 ,  H01L21/02505 ,  H01L21/02529 ,  H01L21/02532 ,  H01L21/0262 ,  H01L31/02363 ,  H01L31/02366 ,  H01L31/1804 ,  Y02E10/547 ,  Y02P70/521

摘要： A silicon-based film is formed superimposing a direct-current potential on the high-frequency power to set the potential of the high-frequency power feed section to a potential which is lower by V1 than the ground potential; the V1 satisfying |V2|≦|V1|≦50×|V2|, where V2 is the potential difference from the ground potential, produced in the electrode in the state the plasma has taken place under the same conditions except that the direct-current potential is not superposed on the high-frequency power and the electrode is brought into a non-grounded state. This can provide a silicon-based film having superior characteristics at a high film formation rate, and a semiconductor device making use of this silicon-based film, having superior adherence, environmental resistance, and can enjoy a short tact time at the time of manufacture.

摘要翻译： 形成在高频电力上叠加直流电位的硅基膜，将高频供电部的电位设定为比地电位低V1的电位; 满足| V2 | <= | V1 | <= 50x | V2 |的V1，其中V2是在等离子体在相同条件下发生的状态下在电极中产生的与地电位的电位差， 电流电势不叠加在高频电源上，并且电极进入非接地状态。 这可以提供具有高成膜速度的优异特性的硅基膜和使用该硅基膜的半导体器件，具有优异的附着力，耐环境性，并且可以在制造时享受短的时间 。

公开(公告)号：US6054024A

公开(公告)日：2000-04-25

申请号：US927395

申请日：1997-09-10

申请人： Noboru Toyama ,  Keishi Saito ,  Ryo Hayashi ,  Yukiko Iwasaki

发明人： Noboru Toyama ,  Keishi Saito ,  Ryo Hayashi ,  Yukiko Iwasaki

IPC分类号： C23C14/08 ,  C23C14/34 ,  C23C14/56 ,  H01L21/203 ,  H01L21/285 ,  H01L31/04 ,  H01L31/10 ,  H01L31/18

CPC分类号： C23C14/562 ,  C23C14/34 ,  H01L31/1884 ,  Y02E10/50

摘要： There are provided a method which, in forming a transparent conductive film by sputtering on a semiconductor junction layer provided on a conductive substrate which bears at least the transparent conductive film thereon, comprises steps of electrically insulating the conductive substrate, and maintaining the self bias voltage Vself of the conductive substrate within a range of -50 V.ltoreq.Vself

摘要翻译： 提供了一种方法，在通过溅射形成透明导电膜的设置在至少承载有透明导电膜的导电基板上的半导体接合层上形成透明导电膜的方法包括以下步骤：使导电基板电绝缘，并保持自偏压 导电衬底的自身在-50V

公开(公告)号：US06855621B2

公开(公告)日：2005-02-15

申请号：US09983427

申请日：2001-10-24

申请人： Takaharu Kondo ,  Masafumi Sano ,  Akira Sakai ,  Yasuyoshi Takai ,  Ryo Hayashi ,  Toshihiro Yamashita

发明人： Takaharu Kondo ,  Masafumi Sano ,  Akira Sakai ,  Yasuyoshi Takai ,  Ryo Hayashi ,  Toshihiro Yamashita

IPC分类号： C23C16/24 ,  C23C16/505 ,  C23C16/511 ,  C30B25/10 ,  H01L21/205 ,  H01L31/0224 ,  H01L31/0368 ,  H01L31/0392 ,  H01L31/04 ,  H01L31/18 ,  H01L21/20 ,  H01L21/26 ,  H01L21/302 ,  H01L21/31

CPC分类号： H01L21/02532 ,  C23C16/24 ,  C23C16/505 ,  C23C16/511 ,  C30B25/105 ,  C30B29/06 ,  H01L21/02425 ,  H01L21/0245 ,  H01L21/02516 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/02609 ,  H01L21/0262 ,  H01L31/022466 ,  H01L31/03687 ,  H01L31/0392 ,  H01L31/1816 ,  Y02E10/548

摘要： The method of the present invention is a method of forming a silicon-based semiconductor layer by introducing a source gas into a vacuum vessel and forming a silicon-based semiconductor layer containing a microcrystal on a substrate introduced into the vacuum vessel by plasma CVD, which comprises a first step of forming a first region with a source gas containing halogen atoms, and a second step of forming a second region on the first region under a condition where the source gas containing halogen atoms in the second step is lower in gas concentration than that of the first step, thereby providing a method of forming a silicon-based semiconductor layer having an excellent photoelectric characteristic at a film forming rate of an industrially practical level and a photovoltaic element using the silicon-based semiconductor layer formed by the method.

摘要翻译： 本发明的方法是通过将源气体引入真空容器中并通过等离子体CVD在引入真空容器的基板上形成含有微晶体的硅基半导体层来形成硅基半导体层的方法， 包括用含有卤素原子的源气体形成第一区域的第一步骤，以及在第二步骤中含有卤素原子的气体气体的气体浓度低的条件下，在第一区域上形成第二区域的第二步骤， 从而提供一种以工业实用水平的成膜速度形成具有优异光电特性的硅基半导体层的方法和使用通过该方法形成的硅基半导体层的光电元件。

公开(公告)号：US06858308B2

公开(公告)日：2005-02-22

申请号：US10092617

申请日：2002-03-08

申请人： Takaharu Kondo ,  Shotaro Okabe ,  Masafumi Sano ,  Akira Sakai ,  Ryo Hayashi ,  Shuichiro Sugiyama

发明人： Takaharu Kondo ,  Shotaro Okabe ,  Masafumi Sano ,  Akira Sakai ,  Ryo Hayashi ,  Shuichiro Sugiyama

IPC分类号： B32B9/00 ,  H01L21/00 ,  H01L21/336 ,  H01L29/04 ,  H01L29/786 ,  H01L31/0368 ,  H01L31/075 ,  H01L31/18

CPC分类号： H01L29/66765 ,  H01L29/045 ,  H01L29/78618 ,  H01L29/78678 ,  H01L29/78696 ,  H01L31/03685 ,  H01L31/075 ,  H01L31/182 ,  Y02E10/545 ,  Y02E10/546 ,  Y02E10/548 ,  Y02P70/521 ,  Y10T428/261

摘要： The invention provides a semiconductor element having a semiconductor junction composed of silicon-based films, at least one of the silicon-based films containing a microcrystal. The microcrystal is located in at least one interface region of the silicon-based film containing the microcrystal and has no orientation property. Further, the invention provides a semiconductor element having a semiconductor junction composed of silicon-based films, at least one of the silicon-based films containing a microcrystal, and the orientation property of the microcrystal changing in a film thickness direction of the silicon-based film containing the microcrystal. Thereby, a silicon-based film having a shortened tact time, an increased film forming rate, and excellent characteristics, and a semiconductor element including this silicon-based film having excellent adhesion and environmental resistance can be obtained.

摘要翻译： 本发明提供了一种半导体元件，其具有由硅基膜构成的半导体结，至少一个含有微晶的硅基膜。 微晶体位于含有微结晶的硅基膜的至少一个界面区域中，并且不具有取向性。 此外，本发明提供一种半导体元件，其具有由硅系膜构成的半导体结，含有微晶的硅系膜中的至少一种以及微晶在硅基膜的膜厚方向上的取向性 含有微晶的薄膜。 由此，可以获得具有缩短的生产时间缩短，成膜速度和优异特性的硅基膜，以及包含这种具有优异的粘附性和耐环境性的硅基膜的半导体元件。

公开(公告)号：US06794275B2

公开(公告)日：2004-09-21

申请号：US10113675

申请日：2002-04-02

申请人： Takaharu Kondo ,  Shotaro Okabe ,  Masafumi Sano ,  Akira Sakai ,  Yuzo Koda ,  Ryo Hayashi ,  Shuichiro Sugiyama ,  Koichiro Moriyama

发明人： Takaharu Kondo ,  Shotaro Okabe ,  Masafumi Sano ,  Akira Sakai ,  Yuzo Koda ,  Ryo Hayashi ,  Shuichiro Sugiyama ,  Koichiro Moriyama

IPC分类号： H01L21365

CPC分类号： H01L31/1804 ,  C23C16/46 ,  C23C16/463 ,  C23C16/505 ,  C23C16/52 ,  C23C16/545 ,  H01L21/02422 ,  H01L21/02425 ,  H01L21/02491 ,  H01L21/02505 ,  H01L21/02529 ,  H01L21/02532 ,  H01L21/0262 ,  H01L29/66765 ,  H01L31/075 ,  H01L31/076 ,  H01L31/1824 ,  H01L31/1884 ,  H01L31/202 ,  Y02E10/545 ,  Y02E10/547 ,  Y02E10/548 ,  Y02P70/521

摘要： In a process for forming a silicon-based film on a substrate according to the present invention, the substrate has a temperature gradient in the thickness direction thereof in the formation of the silicon-based film and the temperature gradient is made such that a deposition surface of the substrate has a higher temperature than a backside or the direction of the temperature gradient is reversed. With this configuration, the present invention provides a silicon-based thin film having good properties at a high deposition rate and provides a semiconductor device including it. The present invention also provides a semiconductor device including the silicon-based thin films that has good adhesion and weather-resisting properties and that can be manufactured in a short tact time.

摘要翻译： 在根据本发明的基板上形成硅基膜的方法中，在形成硅基膜时，基板在其厚度方向上具有温度梯度，并使温度梯度使得沉积表面 的衬底具有比背面更高的温度或温度梯度的方向反转。 利用这种结构，本发明提供一种在高沉积速率下具有良好性能的硅基薄膜，并提供包括它的半导体器件。 本发明还提供一种半导体器件，其包括硅基薄膜，其具有良好的粘合性和耐候性，并且可以在短的时间内制造。