Thick film circuit board
    2.
    发明授权
    Thick film circuit board 失效
    厚膜电路板

    公开(公告)号:US5709927A

    公开(公告)日:1998-01-20

    申请号:US623836

    申请日:1996-03-29

    摘要: A thick film circuit board comprising an insulating substrate; conductor wiring layers of a conductive material containing an oxide and formed on the insulating substrate by printing and firing; a resistance layer of a resistive material having a selected sheet resistance, being chemically reactive with the oxide, and formed between and bridging the conductor wiring layers by printing and firing; and a conductive barrier layer interposed between each of the conductor wiring layers and the resistance layer to prevent chemical reaction between the oxide of the conductor wiring layers and the resistive material of the resistance layer.

    摘要翻译: 一种厚膜电路板,包括绝缘基板; 含有氧化物的导电材料的导体布线层,通过印刷和烧制形成在绝缘基板上; 具有选择的薄层电阻的电阻材料的电阻层,与氧化物发生化学反应,并通过印刷和烧制形成并桥接导体布线层; 以及插入在每个导体布线层和电阻层之间的导电阻挡层,以防止导体布线层的氧化物和电阻层的电阻材料之间的化学反应。

    Semiconductor device constituting bipolar transistor
    5.
    发明授权
    Semiconductor device constituting bipolar transistor 失效
    构成双极晶体管的半导体器件

    公开(公告)号:US4994880A

    公开(公告)日:1991-02-19

    申请号:US412552

    申请日:1989-09-25

    CPC分类号: H01L29/0692 H01L29/41708

    摘要: Base regions of first and second stage transistors are formed in a semiconductor substrate consisting of low and high resistivity collector layers, and emitter regions are formed in the respective base regions. The emitter region of the second stage transistor has an interdigital structure with a plurality of finger portions, and an emitter surface electrode is formed on the emitter region of the second stage transistor. The second stage transistor emitter surface electrode has an extending portion at a position spaced apart from a transistor operation region where the finger portions are formed. An emitter connection electrode is formed on the extending portion, and a lead is connected by soldering or the like to the emitter connection electrode. In a portion of the emitter surface electrode extending from the emitter connection electrode to the transistor operation region, slits are formed such that they are bypassed by emitter current so that the lead resistance from each finger portion to the emitter connection electrode is substantially uniform.

    摘要翻译: 第一和第二级晶体管的基极区域形成在由低和高电阻率集电极层组成的半导体衬底中,并且发射极区域形成在各个基极区域中。 第二级晶体管的发射极区域具有多个指状部分的叉指结构,并且发射极表面电极形成在第二级晶体管的发射极区域上。 第二级晶体管发射体表面电极在与形成指状部分的晶体管工作区间隔开的位置处具有延伸部分。 发射极连接电极形成在延伸部分上,引线通过焊接等连接到发射极连接电极。 在从发射极连接电极延伸到晶体管工作区域的发射体表面电极的一部分中,形成狭缝,使得它们被发射极电流旁路,使得从每个指状部分到发射极连接电极的引线电阻基本上均匀。

    Insulated gate bipolar transistor and method of fabricating the same
    7.
    发明授权
    Insulated gate bipolar transistor and method of fabricating the same 失效
    绝缘栅双极晶体管及其制造方法

    公开(公告)号:US06452219B1

    公开(公告)日:2002-09-17

    申请号:US08917488

    申请日:1997-08-26

    IPC分类号: H01L2974

    摘要: An IGBT having a buffer layer for shortening the turn-off time and for preventing the latching up is improved. The buffer layer of the present invention is not bare at the edge of a diced cross-section of the IGBT chip. According to this construction, a withstanding voltage between a semiconductor substrate and the buffer layer is lower than the withstand voltage of the pn junction at the edge of the diced cross-section. Therefore, the whole pn junction between the semiconductor substrate and the buffer layer, which has wide area, breaks down, as a result, energy caused by a negative voltage is absorbed, and the withstanding voltage against the negative voltage is improved.

    摘要翻译: 具有用于缩短关断时间和防止闭锁的缓冲层的IGBT得到改善。 本发明的缓冲层在IGBT芯片的切割截面的边缘处不裸露。 根据这种结构,半导体衬底和缓冲层之间的耐电压低于切割截面边缘处的pn结的耐电压。 因此,半导体衬底与具有宽面积的缓冲层之间的整个pn结被分解,结果,由负电压引起的能量被吸收,并且抵抗负电压的耐受电压提高。

    Method of welding metals of different kind by laser
    8.
    发明授权
    Method of welding metals of different kind by laser 失效
    通过激光焊接不同种类的金属的方法

    公开(公告)号:US5343014A

    公开(公告)日:1994-08-30

    申请号:US838304

    申请日:1992-03-12

    IPC分类号: B23K26/32 B23K26/00

    摘要: The present invention is to provide a method for laser welding different kinds of metals by which at least two types of metal members having mutually different laser reflection factor, are put one upon another and welded when the metal members are irradiated with lasers emitted in the superposed direction, comprising a process to put the first metal member on the second metal member, wherein the first metal member has a first laser reflection factor and the second metal member has a second laser reflection factor which is lower than that of the aforementioned first laser reflection factor, and the first and the second metal member are put one upon another through a metal layer and when irradiated with lasers, the aforementioned metal layer is more difficult to melt than the aforementioned second metal member. The method of the present invention further comprises a process in which lasers are irradiated from the aforementioned first metal member side. According to the aforementioned method, laser output which is sufficiently high to melt the first metal member having a high laser reflection factor, is irradiated from the first metal member side, so that this laser output is excessively high to melt the second metal member. However, the aforementioned metal layer acts as if it inhibits the laser input to the second metal member. Accordingly, abrupt laser input into the second metal member can be avoided, and the occurrence of scatter of the metal can be prevented so that an excellent joint condition can be obtained.

    摘要翻译: PCT No.PCT / JP91 / 00913 371日期:1992年3月12日 102(e)1992年3月12日PCT PCT 1991年7月8日PCT公布。 出版物WO92 / 00828 日本1992年1月23日。本发明提供一种激光焊接不同种类的金属的方法,通过该方法将具有相互不同的激光反射系数的至少两种类型的金属构件放置在另一个上并在金属构件为 用叠加方向发射的激光照射,包括将第一金属构件放置在第二金属构件上的处理,其中第一金属构件具有第一激光反射系数,第二金属构件具有低于第二金属构件的第二激光反射系数 上述第一激光反射因子以及第一和第二金属构件通过金属层彼此重叠,并且当用激光照射时,上述金属层比上述第二金属构件更难熔化。 本发明的方法还包括从上述第一金属构件侧照射激光的工序。 根据上述方法,从第一金属构件侧照射足够高以熔化具有高激光反射系数的第一金属构件的激光输出,使得该激光输出过高而熔化第二金属构件。 然而,上述金属层的作用就好像它抑制了对第二金属构件的激光输入。 因此,可以避免输入到第二金属构件的突然的激光,并且可以防止金属的散射的发生,从而可以获得良好的接合状态。