Lithography process window analyzing method and analyzing program
    5.
    发明授权
    Lithography process window analyzing method and analyzing program 失效
    光刻过程窗口分析方法和分析程序

    公开(公告)号:US08154710B2

    公开(公告)日:2012-04-10

    申请号:US12400677

    申请日:2009-03-09

    IPC分类号: G03B27/32 G03B27/52

    CPC分类号: G03B27/32 G03F7/705

    摘要: A lithography process window analyzing method for setting a process window based on ranges of exposure amounts and focus positions, and giving evaluation of reliability of the set process window, includes setting, based on a plurality of process conditions including exposure amounts and focus positions in the performed exposure processing, analysis reliability M for process conditions including an arbitrary exposure amount and an arbitrary focus position; calculating reliability R of the process window based on the analysis reliability M concerning the process conditions included in the process window; and comparing a magnitude relation between the reliability R and a predetermined threshold and determining presence or absence of reliability of the process window according to a result of the comparison.

    摘要翻译: 一种用于基于曝光量和焦点位置的范围来设置处理窗口的光刻处理窗口分析方法,以及对设置的处理窗口的可靠性的评估,包括基于多个处理条件,包括曝光量和焦点位置 执行曝光处理,包括任意曝光量和任意焦点位置的处理条件的分析可靠度M; 基于与处理窗口中包含的处理条件有关的分析可靠度M来计算处理窗口的可靠度R; 以及根据比较结果比较可靠度R和预定阈值之间的大小关系,并确定处理窗口的可靠性的存在与否。

    Semiconductor memory device operating in synchronization with a clock signal for high-speed data write and data read operations
    10.
    发明授权
    Semiconductor memory device operating in synchronization with a clock signal for high-speed data write and data read operations 有权
    半导体存储器件与时钟信号同步工作,用于高速数据写入和数据读取操作

    公开(公告)号:US06427197B1

    公开(公告)日:2002-07-30

    申请号:US09394891

    申请日:1999-09-13

    IPC分类号: G11C800

    CPC分类号: G11C7/1072 G11C7/1039

    摘要: The present invention is a memory circuit for writing prescribed numbers of bits of write data, determined according to the burst length, in response to write command, comprising: a first stage for inputting, and then holding, row addresses and column addresses simultaneously with the write command; a second stage having a memory core connected to the first stage via a pipeline switch, wherein the row addresses and column addresses are decoded, and word line and sense amps are activated; a third stage for inputting the write data serially and sending the write data to the memory core in parallel; and a serial data detection circuit for generating write-pipeline control signal for making the pipeline switch conduct, after the prescribed number of bits of write data has been inputted. According to the present invention, in an FCRAM exhibiting a pipeline structure, the memory core in the second stage can be activated after safely fetching the write data in the burst length. When writing successively or reading successively, moreover, the command cycle can made short irrespective of the burst length.

    摘要翻译: 本发明是一种存储电路,用于响应于写命令,写入根据突发长度确定的指定数量的写入数据,包括:第一级,用于与第一级同时输入,然后保持行地址和列地址 写命令 第二级具有经由流水线开关连接到第一级的存储器核,其中行地址和列地址被解码,字线和检测放大器被激活; 用于串行输入写入数据并且将写入数据并行地发送到存储器核心的第三级; 以及串行数据检测电路,用于在输入了规定数量的写入数据之后,产生用于使流水线开关导通的写入流水线控制信号。 根据本发明,在呈现流水线结构的FCRAM中,可以在以突发长度安全地取出写入数据之后激活第二级中的存储器核心。 此外,当连续写入或连续读取时,无论突发长度如何,命令循环可以变短。