摘要:
In a two-stroke internal combustion engine, total hydrocarbon (THC) exhaust is decreased as a result of small structural changes and without loss of output power. A Schnurle scavenging-type combustion chamber has a hemispherical main surface and an annular skirt-like squish band, and a spark plug is disposed for a spark point to be substantially at the center of the combustion chamber. The squish band has minimized width.
摘要翻译:在二冲程内燃机中,总碳氢化合物(THC)排气由于结构变化小而不损失输出功率而减少。 Schn + E,uml u + EE清除式燃烧室具有半球形主表面和环形裙状挤压带,火花塞设置为基本上位于燃烧室的中心。 挤压带具有最小的宽度。
摘要:
In a two-stroke internal combustion engine, output power is increased and total hydrocarbon (THC) exhaust is decreased as a result of small structural changes. An exhaust port and scavenging ports are configured and disposed such that they are open in a reduced period of the combustion cycle.
摘要:
A muffler for a two-stroke internal combustion engine includes an expansion chamber into which exhaust gas ejected from the exhaust port of the engine is introduced. An air-supplying device is adapted to supply outside air to the expansion chamber. The air-supplying device is actuated by taking advantage of the pressure pulsation in the crank case of the engine, and is constituted by a diaphragm pump.
摘要:
A muffler for a two-stroke internal combustion engine has an expansion chamber into which a rush of exhaust gas is introduced from the engine. In the vicinity of an exhaust gas inlet from the engine into the expansion chamber, the muffler has an external air intake for external air to be suctionally introduced into the expansion chamber by the rush of exhaust gas. With the external air introduced, carbon monoxide (CO) emission into the ambient is reduced.
摘要:
A lithography process window analyzing method for setting a process window based on ranges of exposure amounts and focus positions, and giving evaluation of reliability of the set process window, includes setting, based on a plurality of process conditions including exposure amounts and focus positions in the performed exposure processing, analysis reliability M for process conditions including an arbitrary exposure amount and an arbitrary focus position; calculating reliability R of the process window based on the analysis reliability M concerning the process conditions included in the process window; and comparing a magnitude relation between the reliability R and a predetermined threshold and determining presence or absence of reliability of the process window according to a result of the comparison.
摘要:
In a semiconductor apparatus of the present invention, a plurality of circuit components are provided. A first bus interconnects the circuit components. A second bus interconnects the circuit components. A switching unit outputs a select signal that causes each circuit component to select one of the first bus and the second bus when transmitting a signal from one of the circuit components to another. The second bus has a size larger than a size of the first bus.
摘要:
In a semiconductor apparatus of the present invention, a plurality of circuit components are provided. A first bus interconnects the circuit components. A second bus interconnects the circuit components. A switching unit outputs a select signal that causes each circuit component to select one of the first bus and the second bus when transmitting a signal from one of the circuit components to another. The second bus has a size larger than a size of the first bus.
摘要:
Disclosed is a semiconductor device for outputting an output signal with a given phase held relative to an external clock despite a difference in characteristic, a change in temperature, and a fluctuation in supply voltage. The semiconductor device comprises an input circuit for inputting the external clock and outputting a reference signal, an output circuit for receiving an output timing signal and outputting an output signal according to the timing of the output timing signal, and an output timing control circuit for controlling the output timing so that the output signal exhibits a given phase relative to the external clock. The output timing control circuit includes a delay circuit for delaying the reference signal by a specified magnitude and generating an output timing signal, a phase comparison circuit for comparing the phase of the output timing signal with the phase of the reference signal, and a delay control circuit for specifying the magnitude of a delay to be produced by the delay circuit according to the result of comparison performed by the phase comparison circuit.
摘要:
In a semiconductor apparatus of the present invention, a plurality of circuit components are provided. A first bus interconnects the circuit components. A second bus interconnects the circuit components. A switching unit outputs a select signal that causes each circuit component to select one of the first bus and the second bus when transmitting a signal from one of the circuit components to another. The second bus has a size larger than a size of the first bus.
摘要:
The present invention is a memory circuit for writing prescribed numbers of bits of write data, determined according to the burst length, in response to write command, comprising: a first stage for inputting, and then holding, row addresses and column addresses simultaneously with the write command; a second stage having a memory core connected to the first stage via a pipeline switch, wherein the row addresses and column addresses are decoded, and word line and sense amps are activated; a third stage for inputting the write data serially and sending the write data to the memory core in parallel; and a serial data detection circuit for generating write-pipeline control signal for making the pipeline switch conduct, after the prescribed number of bits of write data has been inputted. According to the present invention, in an FCRAM exhibiting a pipeline structure, the memory core in the second stage can be activated after safely fetching the write data in the burst length. When writing successively or reading successively, moreover, the command cycle can made short irrespective of the burst length.