METHOD FOR THE PRODUCTION OF SOLAR GRADE SILICON
    3.
    发明申请
    METHOD FOR THE PRODUCTION OF SOLAR GRADE SILICON 审中-公开
    生产太阳能级硅的方法

    公开(公告)号:US20110302963A1

    公开(公告)日:2011-12-15

    申请号:US13203493

    申请日:2010-02-25

    申请人: Harsharn Tathgar

    发明人: Harsharn Tathgar

    摘要: The present invention relates to a method for the preparation of solar grade silicon comprising crystallization of large high purity silicon crystals in a hyper eutectic binary or ternary alloy containing silicon, or a refined silicon melt, wherein small silicon crystals are added to the melt and the resulting large silicon crystals are separated from the melt. The separation may be performed by centrifugation or filtration.

    摘要翻译: 本发明涉及一种制备太阳能级硅的方法,包括在含有硅的超共晶二元或三元合金或精制硅熔体中结晶大量高纯度硅晶体,其中将小硅晶体加入熔体中, 所得到的大的硅晶体与熔体分离。 分离可以通过离心或过滤进行。

    Method for the production of solar grade silicon
    7.
    发明授权
    Method for the production of solar grade silicon 有权
    生产太阳能级硅的方法

    公开(公告)号:US09039833B2

    公开(公告)日:2015-05-26

    申请号:US13203493

    申请日:2010-02-25

    申请人: Harsharn Tathgar

    发明人: Harsharn Tathgar

    摘要: The present invention relates to a method for the preparation of solar grade silicon comprising crystallization of large high purity silicon crystals in a hyper eutectic binary or ternary alloy containing silicon, or a refined silicon melt, wherein small silicon crystals are added to the melt and the resulting large silicon crystals are separated from the melt. The separation may be performed by centrifugation or filtration.

    摘要翻译: 本发明涉及一种制备太阳能级硅的方法,包括在含有硅的超共晶二元或三元合金或精制硅熔体中结晶大量高纯度硅晶体,其中将小硅晶体加入熔体中, 所得到的大的硅晶体与熔体分离。 分离可通过离心或过滤进行。