公开(公告)号：US20050186501A1

公开(公告)日：2005-08-25

申请号：US10954374

申请日：2004-10-01

申请人： Shinji Kishimura ,  Masayuki Endo ,  Masaru Sasago ,  Mitsuru Ueda ,  Hirokazu Imori ,  Toshiaki Fukuhara

发明人： Shinji Kishimura ,  Masayuki Endo ,  Masaru Sasago ,  Mitsuru Ueda ,  Hirokazu Imori ,  Toshiaki Fukuhara

IPC分类号： C08F28/04 ,  C08G75/30 ,  G03C1/76 ,  G03F7/004 ,  G03F7/039

CPC分类号： G03F7/0397 ,  G03F7/0046 ,  G03F7/0395 ,  Y10S430/106 ,  Y10S430/108 ,  Y10S430/115 ,  Y10S430/146 ,  Y10S430/167

摘要： The base polymer of a resist material contains a polymer compound including a first unit represented by a general formula of the following Chemical Formula 4 and a second unit represented by a general formula of the following Chemical Formula 5: wherein R1, R2 and R3 are the same or different and are a hydrogen atom, a fluorine atom, or a straight-chain alkyl group, a branched or cyclic alkyl group or a fluoridated alkyl group with a carbon number not less than 1 and not more than 20; R4 is a straight-chain alkylene group or a branched or cyclic alkylene group with a carbon number not less than 0 and not more than 20; R5 and R6 are the same or different and are a hydrogen atom, a straight-chain alkyl group, a branched or cyclic alkyl group or a fluoridated alkyl group with a carbon number not less than 1 and not more than 20, or a protecting group released by an acid; R7 is a methylene group, an oxygen atom, a sulfur atom or -SO2-; R8, R9, R10 and R11 are the same or different and are a hydrogen atom, a fluorine atom, a hydroxyl group, -0R13, CO2R13, -R2-OR13 or -R12-CO2R13, at least one of R8, R9, R10 and R11 including -OR13, -CO2R13, -R12-OR13 or -R12-CO2R13 (wherein R 2 is a straight-chain alkylene group, a branched or cyclic alkylene group or a fluoridated alkylene group with a carbon number not less than 1 and not more than 20 and R13 is a hydrogen atom, a straight-chain alkyl group, a branched or cyclic alkyl group or a fluoridated alkyl group with a carbon number not less than 1 and not more than 20, or a protecting group released by an acid); 0

公开(公告)号：US06930393B2

公开(公告)日：2005-08-16

申请号：US10807494

申请日：2004-03-23

申请人： Yoshitaka Hamada ,  Takeshi Asano ,  Hideo Nakagawa ,  Masaru Sasago

发明人： Yoshitaka Hamada ,  Takeshi Asano ,  Hideo Nakagawa ,  Masaru Sasago

IPC分类号： C08K5/5415 ,  C08L83/04 ,  C09D5/25 ,  C09D183/02 ,  C09D183/04 ,  C09D183/06 ,  C09D183/14 ,  H01L21/312 ,  H01L21/316 ,  H01L23/522 ,  H01L23/532 ,  H01L21/04

CPC分类号： H01L21/02126 ,  H01L21/02203 ,  H01L21/02216 ,  H01L21/02282 ,  H01L21/3124 ,  H01L21/31695 ,  H01L23/5222 ,  H01L23/5329 ,  H01L2924/0002 ,  H01L2924/09701 ,  H01L2924/00

摘要： The object of the invention is to provide a porous film having the dielectric constant of 2.2 or less and having practicable mechanical strength. This invention provides a porous film-forming composition comprising (A) and (B): (A) 100 parts by weight of a hydrolyzable silicon compound and/or a product resulting from hydrolysis condensation of silicon compound expressed by following formula (1): R1aSiZ14-a  (1)  wherein Z1 denotes a hydrolyzable group; R1 denotes a substituted or non-substituted monovalent hydrocarbon group; and a denotes an integer of 0 to 3; and (B) 0.1 to 20 parts by weight of a cross-linking agent comprising at least one cyclic oligomer which can generate silanol group(s) by heating and which is expressed by following formula (3): {R31(H)SiO}d{R32(Z3)SiO}e  (3)  wherein R31 and R32 each denotes a substituted or non-substituted monovalent hydrocarbon group; Z3 denotes a group which can generate silanol by heating; and each d and e denotes an integer of 0 to 10, and a sum of d and e is greater than or equal to three.

摘要翻译： 本发明的目的是提供介电常数为2.2以下且具有可行的机械强度的多孔膜。 本发明提供一种多孔成膜组合物，其包含（A）和（B）：（A）100重量份水解性硅化合物和/或由下式（1）表示的硅化合物的水解缩合得到的产物： <？in-line-formula description =“In-line Formulas”end =“lead”？> R＆lt; 1＆lt; 1＆lt; 1＆lt; > 4-a <1> <？in-line-formula description =“In-line Formulas”end =“tail”？>其中Z 1表示可水解基团; R 1表示取代或未取代的一价烃基; a表示0〜3的整数， 和（B）0.1至20重量份的包含至少一种可通过加热产生硅烷醇基的环状低聚物并由下式（3）表示的交联剂：<β在线式 描述=“在线公式”end =“lead”？> {R 30]（H）SiO} D（32）（Z （3）<？in-line-formula description =“In-line formula”end =“tail”？>其中R 31 R 32和R 32各自表示取代或未取代的一价烃基; Z 3表示可以通过加热生成硅烷醇的基团; d和e表示0〜10的整数，d与e的和大于等于3。

公开(公告)号：US20050158672A1

公开(公告)日：2005-07-21

申请号：US11013474

申请日：2004-12-17

申请人： Masayuki Endo ,  Masaru Sasago

发明人： Masayuki Endo ,  Masaru Sasago

IPC分类号： G03F7/16 ,  G03F7/30 ,  G03F7/32 ,  G03F7/40 ,  G03F7/00

CPC分类号： G03F7/40 ,  G03F7/168 ,  G03F7/3021 ,  G03F7/32 ,  G03F7/322

摘要： In a pattern formation method of this invention, a resist film is formed on a substrate and pattern exposure is performed by selectively irradiating the resist film with exposing light. Subsequently, the resist film is developed after the pattern exposure, and the developed resist film is rinsed with an aqueous solution including cyclodextrin. Thus, a fine resist pattern made of the resist film is formed without causing pattern collapse.

摘要翻译： 在本发明的图案形成方法中，在基板上形成抗蚀剂膜，并通过用曝光光选择性地照射抗蚀剂膜来进行图案曝光。 随后，在图案曝光之后使抗蚀剂膜显影，并且用包含环糊精的水溶液冲洗显影的抗蚀剂膜。 因此，形成由抗蚀剂膜制成的精细抗蚀剂图案而不引起图案塌陷。

公开(公告)号：US06913857B2

公开(公告)日：2005-07-05

申请号：US10168963

申请日：2001-12-26

申请人： Masaru Sasago ,  Masayuki Endo ,  Tokushige Hisatsugu

发明人： Masaru Sasago ,  Masayuki Endo ,  Tokushige Hisatsugu

IPC分类号： G03C5/00 ,  G03F1/20 ,  G03F1/22 ,  G03F1/68 ,  G03F7/20 ,  G03F9/00 ,  H01L21/027

CPC分类号： G03F1/20 ,  G03F1/22

摘要： As shown in FIG. 2, a multi-layer structured exposure mask 1 of this embodiment is provided with a frame 20 made of glass, a silicon plate 15 provided on an under surface of the frame 20, a heat absorption mask 16 provided on an under surface of the silicon plate 15, a silicon plate 11 provided on an under surface of the heat absorption mask 16 and a stencil mask 14 provided on an under surface of the silicon plate 11. The stencil mask 14 is made up of a silicon substrate and is provided with a slit-shaped patterning opening 14a to form a resist pattern. The heat absorption mask 16 is made up of a silicon substrate coated with an SiN film and is provided with slit-shaped openings 16a shaped in almost the same way as the patterning openings 14a of the stencil mask 14. The opening 16a is shaped in such a size that will not block electron beams necessary to form a resist pattern as shown in FIG. 3(a). That is, a size of the opening 16a is equal to a size of the patterning opening 14a or a size of the opening 16a is a little larger Furthermore, the multi-layer structured exposure mask 1 of this embodiment is provided with a large opening 20a that penetrates the frame 20 and silicon plate 15 and exposes the area of the upper surface of the heat absorption mask 16 in which the openings 16a are formed. Furthermore, the multi-layer structured exposure mask 1 of this embodiment is provided with a hollow section 11a that penetrates the silicon plate 11 and exposes the area of the under surface of the heat absorption mask 16 in which the openings 16a are formed and the area of the upper surface of the stencil mask 14 in which the patterning openings 14a are formed. In the multi-layer structured exposure mask 1 of this embodiment, the patterning openings 14a of the stencil mask 14 and the openings 16a of the heat absorption mask 16 are aligned in the horizontal direction as shown in FIG. 3(a).

公开(公告)号：US06855477B2

公开(公告)日：2005-02-15

申请号：US10256141

申请日：2002-09-27

申请人： Jun Hatakeyama ,  Yuji Harada ,  Yoshio Kawai ,  Masaru Sasago ,  Masayuki Endo ,  Shinji Kishimura ,  Michitaka Ootani ,  Haruhiko Komoriya ,  Kazuhiko Maeda

发明人： Jun Hatakeyama ,  Yuji Harada ,  Yoshio Kawai ,  Masaru Sasago ,  Masayuki Endo ,  Shinji Kishimura ,  Michitaka Ootani ,  Haruhiko Komoriya ,  Kazuhiko Maeda

IPC分类号： G03F7/004 ,  G03F7/039

CPC分类号： G03F7/0045 ,  G03F7/0046 ,  G03F7/0392

摘要： A chemically amplified resist composition comprising (A) a polymer comprising recurring units containing at least one fluorine atom, (B) a compound of formula (1) wherein R1 and R2 are H, F or alkyl or fluorinated alkyl, at least one of R1 and R2 contains at least one fluorine atom, R3 is a single bond or alkylene, R4 is a n-valent aromatic or cyclic diene group, R5 is H or C(═O)R6, R6 is H or methyl, and n is 2, 3 or 4, (C) an organic solvent, and (D) a photoacid generator is sensitive to high-energy radiation and has improved sensitivity and transparency at a wavelength of less than 200 nm.

摘要翻译： 一种化学放大抗蚀剂组合物，其包含（A）包含含有至少一个氟原子的重复单元的聚合物，（B）式（1）的化合物，其中R 1和R 2为H，F或烷基或氟化烷基 ，R 1和R 2中的至少一个含有至少一个氟原子，R 3是单键或亚烷基，R 4是n价的芳族或环状二烯基，R 5 >为H或C（= O）R 6，R 6为H或甲基，n为2,3或4，（C）有机溶剂，（D）光致酸发生剂对高 能量辐射，并且在小于200nm的波长下具有改善的灵敏度和透明度。

公开(公告)号：US06716730B2

公开(公告)日：2004-04-06

申请号：US10339602

申请日：2003-01-10

申请人： Masayuki Endo ,  Masaru Sasago

发明人： Masayuki Endo ,  Masaru Sasago

IPC分类号： H01L2122

CPC分类号： G03F7/168 ,  G03F7/0045 ,  G03F7/2022

摘要： After pre-baking a resist film, a solvent included in the resist film is vaporized. After vaporizing the solvent included in the resist film, pattern exposure is performed by selectively irradiating the resist film with exposing light in vacuum. The resist film is developed after the pattern exposure, so as to form a resist pattern.

摘要翻译： 在预烘烤抗蚀剂膜之后，包含在抗蚀剂膜中的溶剂被蒸发。 在蒸发包含在抗蚀剂膜中的溶剂之后，通过在真空中曝光光来选择性地照射抗蚀剂膜来进行图案曝光。 在图案曝光之后显影抗蚀剂膜，以形成抗蚀剂图案。

公开(公告)号：US06645694B2

公开(公告)日：2003-11-11

申请号：US09922638

申请日：2001-08-07

申请人： Shinji Kishimura ,  Masayuki Endo ,  Masaru Sasago ,  Masamitsu Shirai ,  Masahiro Tsunooka

发明人： Shinji Kishimura ,  Masayuki Endo ,  Masaru Sasago ,  Masamitsu Shirai ,  Masahiro Tsunooka

IPC分类号： G03F7004

CPC分类号： G03F7/0397 ,  G03F7/0392 ,  Y10S430/106

摘要： A pattern formation material of this invention contains a polymer including a first unit represented by Chemical Formula 1 and a second unit represented by Chemical Formula 2, and an acid generator: wherein R1 and R2 are the same or different and selected from the group consisting of an alkyl group, a chlorine atom and an alkyl group including a chlorine atom; R3, R4, R5 and R6 are a hydrogen atom or a fluorine atom, at least one of which is a fluorine atom; and R7 is a protecting group released by an acid.

摘要翻译： 本发明的图案形成材料包含含有由化学式1表示的第一单元和由化学式2表示的第二单元的聚合物和酸产生剂：其中R 1和R 2相同或不同， 选自烷基，氯原子和包含氯原子的烷基; R 3，R 4，R 5和R 6是氢原子或氟原子，其中至少一个是氟原子; R 7是被酸释放的保护基。

公开(公告)号：US06531259B1

公开(公告)日：2003-03-11

申请号：US09592937

申请日：2000-06-13

申请人： Shinji Kishimura ,  Akiko Katsuyama ,  Masaru Sasago

发明人： Shinji Kishimura ,  Akiko Katsuyama ,  Masaru Sasago

IPC分类号： G03F7004

CPC分类号： G03F7/0392 ,  G03F7/0045 ,  G03F7/039 ,  G03F7/0397 ,  Y10S430/106 ,  Y10S430/111

摘要： The pattern formation material of this invention includes a base polymer having a unit represented by the following General Formula 1: General Formula 1: wherein R0 is an alkyl group; R1 is a group that is decomposed through irradiation of light; and R3 and R4 are the same or different and selected from the group consisting of hydrogen and compounds including hydrogen and carbon.

摘要翻译： 本发明的图案形成材料包括具有由以下通式1表示的单元的基础聚合物：通式1：其中R 0是烷基; R1是通过照射而分解的基团; 并且R 3和R 4相同或不同，并且选自氢和包括氢和碳的化合物。

公开(公告)号：US06511787B2

公开(公告)日：2003-01-28

申请号：US09947764

申请日：2001-09-07

申请人： Yuji Harada ,  Jun Hatakeyama ,  Jun Watanabe ,  Yoshio Kawai ,  Masaru Sasago ,  Masayuki Endo ,  Shinji Kishimura ,  Michitaka Ootani ,  Satoru Miyazawa ,  Kentaro Tsutsumi ,  Kazuhiko Maeda

发明人： Yuji Harada ,  Jun Hatakeyama ,  Jun Watanabe ,  Yoshio Kawai ,  Masaru Sasago ,  Masayuki Endo ,  Shinji Kishimura ,  Michitaka Ootani ,  Satoru Miyazawa ,  Kentaro Tsutsumi ,  Kazuhiko Maeda

IPC分类号： G03F7004

CPC分类号： G03F7/0397 ,  G03F7/0046 ,  G03F7/0392 ,  G03F7/0395 ,  Y10S430/108 ,  Y10S430/111

摘要： An acrylic resin containing hexafluoroisopropanol units has high transmittance to VUV radiation. A resist composition using the resin as a base polymer has high transparency, substrate adhesion, alkali developability and acid-elimination capability and is suited for lithographic microprocessing.

公开(公告)号：US06475706B1

公开(公告)日：2002-11-05

申请号：US09523664

申请日：2000-03-10

申请人： Shinji Kishimura ,  Akiko Katsuyama ,  Masaru Sasago

发明人： Shinji Kishimura ,  Akiko Katsuyama ,  Masaru Sasago

IPC分类号： G03F730

CPC分类号： G03F7/0392 ,  G03F7/0382 ,  Y10S430/106

摘要： A resist film is formed by applying, on a semiconductor substrate, a resist material containing a base polymer including polystyrene in which hydroxyl groups are substituted for hydrogen atoms at two or more portions of a benzene ring. The resist film is irradiated with exposing light of a wavelength of a 1 nm through 180 nm band through a mask for pattern exposure, and the resist film is developed after the pattern exposure, thereby forming a resist pattern.

摘要翻译： 通过在半导体衬底上涂布含有苯基的基团聚合物的抗蚀剂材料形成抗蚀剂膜，所述聚合物包含聚苯乙烯，其中羟基被苯环的两个或多个部分取代氢原子。 通过用于图案曝光的掩模，用波长为1nm至180nm波长的光照射抗蚀剂膜，并且在图案曝光之后使抗蚀剂膜显影，从而形成抗蚀剂图案。