公开(公告)号：US20100207234A1

公开(公告)日：2010-08-19

申请号：US12677123

申请日：2008-09-12

申请人： Hiroaki Tanaka

发明人： Hiroaki Tanaka

IPC分类号： H01L29/06 ,  B23K37/00

CPC分类号： H01L24/85 ,  H01L24/03 ,  H01L24/05 ,  H01L24/06 ,  H01L24/48 ,  H01L24/49 ,  H01L24/78 ,  H01L29/0615 ,  H01L29/0619 ,  H01L29/0638 ,  H01L29/0696 ,  H01L29/7397 ,  H01L2224/04042 ,  H01L2224/05552 ,  H01L2224/05553 ,  H01L2224/05554 ,  H01L2224/05556 ,  H01L2224/05599 ,  H01L2224/0603 ,  H01L2224/4807 ,  H01L2224/48091 ,  H01L2224/4813 ,  H01L2224/48137 ,  H01L2224/48458 ,  H01L2224/4846 ,  H01L2224/48471 ,  H01L2224/4903 ,  H01L2224/49051 ,  H01L2224/4911 ,  H01L2224/78313 ,  H01L2224/78318 ,  H01L2224/85181 ,  H01L2224/85399 ,  H01L2924/00014 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01015 ,  H01L2924/01033 ,  H01L2924/01082 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2224/45099 ,  H01L2924/00 ,  H01L2924/00012

摘要： A semiconductor device (2) includes: a FLR (65) that is disposed on a semiconductor substrate so as to divide the semiconductor substrate into an inner region and an outer region; a first bonding pad (24a to 24d) that is disposed in the inner region and is connected to an external circuit by a wire (14a to 14d) whose one end is connected to the external circuit; and a second bonding pad (26a to 26d) that is disposed in the outer region and on which the other end of the wire is bonded.

摘要翻译： 半导体器件（2）包括：FLR（65），其设置在半导体衬底上以将半导体衬底分成内部区域和外部区域; 第一焊盘（24a〜24d），其设置在所述内部区域中，并且通过一端连接到所述外部电路的导线（14a至14d）连接到外部电路; 以及设置在所述外部区域中并且所述电线的另一端接合在其上的第二接合焊盘（26a至26d）。

公开(公告)号：US20100187860A1

公开(公告)日：2010-07-29

申请号：US12670946

申请日：2008-09-11

申请人： Hiroaki Tanaka ,  Akihide Namura ,  Takahiro Noguchi ,  Fumiaki Kawahara

发明人： Hiroaki Tanaka ,  Akihide Namura ,  Takahiro Noguchi ,  Fumiaki Kawahara

IPC分类号： B62D33/06

CPC分类号： B62D33/0617 ,  E02F9/163

摘要： A cab includes left and right rear pole members having internal spaces and prescribed shapes in cross-section. The right rear pole member includes a first hole portion that extends along the longitudinal direction of the right rear pole member and penetrates the right rear pole member in the left-and-right direction of the right rear pole member, and a first plate-shaped member inserted into and secured in the first hole portion.

摘要翻译： 驾驶室包括具有内部空间和规定形状的左右后极构件的横截面。 右后极构件包括沿着右后极构件的纵向方向延伸并在右后极构件的左右方向上贯穿右后极构件的第一孔部，并且第一板状 插入并固定在第一孔部分中的构件。

公开(公告)号：US07683375B2

公开(公告)日：2010-03-23

申请号：US11540959

申请日：2006-10-02

申请人： Hiroaki Tanaka

发明人： Hiroaki Tanaka

IPC分类号： H01L21/84

CPC分类号： H01L27/12 ,  G02F1/136227 ,  H01L21/76804 ,  H01L27/1248

摘要： A thin-film transistor includes a gate layer, a gate insulting layer, a semiconductor layer, a drain layer, a passivation layer (each of which being formed on or over an insulating substrate), and a conductive layer formed on the passivation layer. The conductive layer is connected to the gate layer or the drain layer by way of a contact hole penetrating at least the passivation layer. The passivation layer has a multiple-layer structure comprising at least a first sublayer and a second sublayer stacked, the first sublayer having a lower etch rate than that of the second sublayer. The first sublayer is disposed closer to the substrate than the second sublayer. The second sublayer has a thickness equal to or less than that of the conductive layer. The shape or configuration of the passivation layer and the underlying gate insulating layer can be well controlled in the etching process, and the conductive layer formed on the passivation layer is prevented from being divided.

摘要翻译： 薄膜晶体管包括栅极层，栅极绝缘层，半导体层，漏极层，钝化层（各自形成在绝缘基板上或绝缘基板上），以及形成在钝化层上的导电层。 导电层通过穿透至少钝化层的接触孔连接到栅极层或漏极层。 钝化层具有包括至少第一子层和堆叠的第二子层的多层结构，第一子层具有比第二子层的蚀刻速率更低的蚀刻速率。 第一子层比第二子层更靠近基板设置。 第二子层的厚度等于或小于导电层的厚度。 可以在蚀刻工艺中良好地控制钝化层和底层栅极绝缘层的形状或构造，并且防止形成在钝化层上的导电层被分割。

公开(公告)号：US07532270B2

公开(公告)日：2009-05-12

申请号：US12020390

申请日：2008-01-25

申请人： Yoshiaki Hashimoto ,  Hiroaki Tanaka ,  Shigeru Kimura ,  Syuusaku Kido

发明人： Yoshiaki Hashimoto ,  Hiroaki Tanaka ,  Shigeru Kimura ,  Syuusaku Kido

IPC分类号： G02F1/136 ,  G02F1/1343

CPC分类号： G02F1/136227 ,  G02F1/134363 ,  G02F2001/136236

摘要： A method for manufacturing a liquid crystal display that provides a wide viewing angle and in which its manufacturing processes are shortened and high reliability is provided. The method includes the steps of forming a gate electrode metal layer and forming a gate electrode by patterning using photolithography; forming an interlayer insulating film, an a−Si layer, an n+ a−Si layer, and a drain electrode metal layer and forming a drain line and an island by performing patterning, ashing processing, reflow processing using photolithography, and peeling; forming an insulating film on a transparent insulating substrate and forming an insulating film contact used to provide a connection to a source electrode of an island at a specified position by patterning or a printing method; forming a transparent conductive film and forming a pixel electrode and common electrode by patterning using photolithography.

摘要翻译： 一种提供宽视角的液晶显示器的制造方法，其制造工艺缩短并提供高可靠性。 该方法包括以下步骤：通过使用光刻法进行图案化形成栅极金属层并形成栅电极; 形成层间绝缘膜，a-Si层，n + a-Si层和漏电极金属层，并通过进行图案化，灰化处理，使用光刻法的回流处理和剥离来形成漏极线和岛; 在透明绝缘基板上形成绝缘膜，形成用于通过图案化或打印方法提供到指定位置处的岛状源极的连接的绝缘膜接触; 形成透明导电膜，并通过使用光刻图案化形成像素电极和公共电极。

公开(公告)号：US07531037B2

公开(公告)日：2009-05-12

申请号：US11287219

申请日：2005-11-28

申请人： Izumi Yoshizaki ,  Satoshi Sano ,  Tomoyuki Kobayashi ,  Masaru Sato ,  Moritoshi Motohara ,  Hiroaki Tanaka ,  Sachiko Takahashi ,  Shinichi Shinozaki ,  Mari Yamanaka ,  Koji Inaka

发明人： Izumi Yoshizaki ,  Satoshi Sano ,  Tomoyuki Kobayashi ,  Masaru Sato ,  Moritoshi Motohara ,  Hiroaki Tanaka ,  Sachiko Takahashi ,  Shinichi Shinozaki ,  Mari Yamanaka ,  Koji Inaka

IPC分类号： C30B29/58

CPC分类号： C30B7/14 ,  C30B7/00 ,  C30B29/58 ,  C30B35/002 ,  Y10T117/10 ,  Y10T117/1024

摘要： Disclosed is a macromolecule-crystal forming apparatus and method capable of obtaining a macromolecule crystal in a simplified and efficient manner. The device comprises a first container containing a sample of macromolecule, a second container containing a gel acting as a buffer material during the crystallization of the macromolecule, and a third container containing a precipitant solution having a function of facilitating the aggregation of molecules during the crystallization of the macromolecule. These containers are connected together in a given manner so as to allow the macromolecule sample and the precipitant to be brought into contact with one another through the gel to induce the crystallization of the macromolecule.

公开(公告)号：US20090011242A1

公开(公告)日：2009-01-08

申请号：US12224311

申请日：2007-03-02

申请人： Hiroaki Tanaka ,  Hiroyuki Takayanagi ,  Seiji Otake ,  Mitsunari Ishizaki

发明人： Hiroaki Tanaka ,  Hiroyuki Takayanagi ,  Seiji Otake ,  Mitsunari Ishizaki

IPC分类号： B32B15/04 ,  B22F7/04

CPC分类号： C04B37/026 ,  C04B2237/123 ,  C04B2237/363 ,  C04B2237/407 ,  H01R39/045 ,  H01R39/06 ,  H01R43/06 ,  Y10T428/30

摘要： A commutator utilizing a carbon composite base material, the carbon composite base material including a carbon base material; and an iron layer. The iron layer, to which a metal material can be joined, is formed on a surface of the carbon base material, iron powders, which are used to form the iron layer, are subjected to a treatment so as to increase surface-adsorbed oxygen before placing the iron powders to the surface of the carbon base material that is formed in advance by sintering, and sintering is applied to the iron powders placed on the surface of the carbon base material at a temperature not less than a diffusion temperature of carbon and not more than a melting point of iron in order to form the iron layer on the surface of the carbon base material.

摘要翻译： 一种利用碳复合基材的换向器，所述碳复合基材包括碳基材料; 和铁层。 在碳基材的表面上形成可以接合金属材料的铁层，对用于形成铁层的铁粉进行处理，以增加表面吸附的氧气 将铁粉放置在预先通过烧结而形成的碳基材料的表面上，并且在不低于碳的扩散温度的温度下对放置在碳基材的表面上的铁粉施加烧结 多于铁的熔点以在碳基材料的表面上形成铁层。

公开(公告)号：US20080287038A1

公开(公告)日：2008-11-20

申请号：US12153111

申请日：2008-05-14

申请人： Shinsuke Miyabe ,  Kuniaki Maejima ,  Masahiro Izumi ,  Hiroaki Tanaka

发明人： Shinsuke Miyabe ,  Kuniaki Maejima ,  Masahiro Izumi ,  Hiroaki Tanaka

IPC分类号： B24B1/00 ,  C09K3/14 ,  C08J5/14

CPC分类号： H01L21/3212 ,  C09G1/02

摘要： The present invention relates to a polishing composition for a substrate including a metal such as wiring, etc., formed on a semiconductor wafer, which can provide a high polishing rate without causing scratches on the wiring metal, a method of producing the polishing composition, and a polishing method. The polishing composition for a semiconductor wafer comprises an acid and an aqueous medium dispersion containing positively-charged silica particles having an amino group-containing silane coupling agent bonded on a surface thereof, the polishing composition having a pH of 2 to 6.

摘要翻译： 本发明涉及一种用于基板的抛光组合物，其包括形成在半导体晶片上的诸如布线等的金属，其能够提供高的抛光速率而不会在布线金属上产生划痕，制造抛光组合物的方法， 和抛光方法。 用于半导体晶片的抛光组合物包括酸和包含在其表面上结合有含氨基的硅烷偶联剂的带正电荷的二氧化硅颗粒的水性介质分散体，该抛光组合物的pH为2至6。

公开(公告)号：US20080280385A1

公开(公告)日：2008-11-13

申请号：US12216959

申请日：2008-07-14

申请人： Hiroaki Tanaka

发明人： Hiroaki Tanaka

IPC分类号： H01L21/00

CPC分类号： H01L27/12 ,  G02F1/136227 ,  H01L21/76804 ,  H01L27/1248

摘要： A thin-film transistor includes a gate layer, a gate insulting layer, a semiconductor layer, a drain layer, a passivation layer (each of which being formed on or over an insulating substrate), and a conductive layer formed on the passivation layer. The conductive layer is connected to the gate layer or the drain layer by way of a contact hole penetrating at least the passivation layer. The passivation layer has a multiple-layer structure comprising at least a first sublayer and a second sublayer stacked, the first sublayer having a lower etch rate than that of the second sublayer. The first sublayer is disposed closer to the substrate than the second sublayer. The second sublayer has a thickness equal to or less than that of the conductive layer. The shape or configuration of the passivation layer and the underlying gate insulating layer can be well controlled in the etching process, and the conductive layer formed on the passivation layer is prevented from being divided.

摘要翻译： 薄膜晶体管包括栅极层，栅极绝缘层，半导体层，漏极层，钝化层（各自形成在绝缘基板上或绝缘基板上），以及形成在钝化层上的导电层。 导电层通过穿透至少钝化层的接触孔连接到栅极层或漏极层。 钝化层具有包括至少第一子层和堆叠的第二子层的多层结构，第一子层具有比第二子层的蚀刻速率更低的蚀刻速率。 第一子层比第二子层更靠近基板设置。 第二子层的厚度等于或小于导电层的厚度。 可以在蚀刻工艺中良好地控制钝化层和底层栅极绝缘层的形状或构造，并且防止形成在钝化层上的导电层被分割。

公开(公告)号：US20080179634A1

公开(公告)日：2008-07-31

申请号：US12018874

申请日：2008-01-24

申请人： Ryo Takiguchi ,  Shogo Numaguchi ,  Hiroaki Tanaka ,  Isao Hirota

发明人： Ryo Takiguchi ,  Shogo Numaguchi ,  Hiroaki Tanaka ,  Isao Hirota

IPC分类号： H04N5/335 ,  H01L27/148

CPC分类号： H01L27/14818 ,  H01L27/14837 ,  H04N5/335 ,  H04N5/372

摘要： A solid-state imaging device is provided. The imaging device includes an imaging portion which includes light receiving portions and vertical transfer registers, a horizontal transfer portion, an output part for outputting an electrical signal converted from electric charges transferred from the horizontal transfer portion, a first reference potential applying means, and a second reference potential applying means. The imaging portion, the horizontal transfer portion and the output part are formed in a first conductivity type semiconductor substrate having a second conductivity type region, and a reference potential is applied to the second conductivity type semiconductor region. The first reference potential applying means applies a reference potential to the second conductivity type semiconductor region corresponding to an area where the output part is formed. The second reference potential applying means applies a reference potential to the second conductivity type semiconductor region corresponding to an area where the imaging portion is formed.

摘要翻译： 提供了一种固态成像装置。 成像装置包括成像部分，其包括光接收部分和垂直传送寄存器，水平传送部分，用于输出从水平传送部分传送的电荷转换的电信号的输出部分，第一参考电位施加装置和 第二参考电位施加装置。 成像部分，水平转印部分和输出部分形成在具有第二导电类型区域的第一导电类型半导体衬底中，并且将参考电位施加到第二导电类型半导体区域。 第一参考电位施加装置对与形成输出部分的区域相对应的第二导电类型半导体区域施加参考电位。 第二参考电位施加装置对与形成有成像部分的区域相对应的第二导电类型半导体区域施加参考电位。

公开(公告)号：US20080174686A1

公开(公告)日：2008-07-24

申请号：US12013752

申请日：2008-01-14

申请人： Hiroaki Tanaka ,  Isao Hirota

发明人： Hiroaki Tanaka ,  Isao Hirota

IPC分类号： H04N5/335

CPC分类号： H04N9/045 ,  H04N5/372 ,  H04N5/3722

摘要： A solid-state imaging device and a charge transfer method are provided. The solid-state imaging device includes light receiving portions arranged in a matrix of rows and columns, vertical transfer portions, and a horizontal transfer portion. The vertical transfer portions are formed for each column of the matrix of the light receiving portions, for transferring charges transferred from the light receiving portions in a vertical direction. The horizontal transfer portion transfers the charges transferred from the vertical transfer portions in a horizontal direction. The vertical transfer portions divide the charges transferred to the vertical transfer portions and transfer the divided charges in the vertical direction. The horizontal transfer portion transfers the divided charges in a mixed state in the horizontal direction.

摘要翻译： 提供固态成像装置和电荷转移方法。 固态成像装置包括以行和列为矩阵排列的光接收部分，垂直传送部分和水平传送部分。 对于光接收部分的矩阵的每列形成垂直传送部分，用于在垂直方向上传送从光接收部分传送的电荷。 水平传送部分在水平方向上传送从垂直传送部分传送的电荷。 垂直传送部分将传送到垂直传送部分的电荷分开，并在垂直方向上传送分开的电荷。 水平传送部分在水平方向上以混合状态传送分割的电荷。