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公开(公告)号：US07388220B2
公开(公告)日：2008-06-17
申请号：US11646938
申请日：2006-12-27
IPC分类号： H01J35/20
CPC分类号： G03F7/70033 , B82Y10/00 , G03F7/70175 , G03F7/70916 , G21K1/062 , G21K2201/061 , G21K2201/065 , G21K2201/067 , H05G2/003 , H05G2/005 , H05G2/006 , H05G2/008
摘要： An apparatus and method for EUV light production is disclosed which may comprise a laser produced plasma (“LPP”) extreme ultraviolet (“EUV”) light source comprising a target delivery system adapted to deliver moving plasma initiation targets and an EUV light collection optic having a focus defining a desired plasma initiation site.
摘要翻译： 公开了一种用于EUV光产生的装置和方法，其可以包括激光产生的等离子体（“LPP”）极紫外（“EUV”）光源，其包括适于递送移动等离子体引发靶的目标传送系统和具有EUV光收集光学器件的EUV光收集光学器件， 定义所需等离子体起始位点的焦点。
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公开(公告)号：US07288778B2
公开(公告)日：2007-10-30
申请号：US11603670
申请日：2006-11-21
IPC分类号： H01J35/20
CPC分类号： H05G2/001 , B82Y10/00 , G03F7/70033 , G03F7/70175 , G03F7/70916 , G21K1/062
摘要： It will be understood that an apparatus and method is disclosed, which may comprise a multi-layer reflecting coating forming an EUV reflective surface which may comprise a spectral filter tuned to selectively highly reflect light in a band centered about at a first preferred wavelength and to significantly reduce the reflection of light at a band centered about a second wavelength, e.g., it may be tuned to reflect maximally or almost maximally, near the top of the reflectivity curve, e.g., at around 13.5 nm and at a significantly lower reflectivity at, e.g., around 11 nm, to discriminate against light near 11 nm and favor light at around 13.5 nm. The spectral filter may comprise a plurality of nested grazing angle of incidence shells comprising reflective surfaces comprising the multi-layer reflective coating. e.g. multilayer mirrors, e.g., with one or more reflecting surfaces per shell.
摘要翻译： 应当理解，公开了一种装置和方法，其可以包括形成EUV反射表面的多层反射涂层，其可以包括调谐为选择性地高度反射在以第一优选波长为中心的带的光的光谱滤光器，并且 显着地减少了在以第二波长为中心的频带处的光的反射，例如，它可以被调谐以在反射率曲线的顶部附近最大或几乎最大程度地反射，例如在大约13.5nm处和在显着较低的反射率处， 例如约11nm，以区分11nm附近的光并有利于约13.5nm的光。 频谱滤波器可以包括多个嵌套的入射角入射壳，包括多层反射涂层的反射表面。 例如 多层反射镜，例如每个壳体具有一个或多个反射表面。
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93.发明申请公开(公告)号：US20100032590A1
公开(公告)日：2010-02-11
申请号：US12221822
申请日：2008-08-06
IPC分类号： G01J3/10
CPC分类号： H05G2/003 , G03F7/70033 , G03F7/70858 , G03F7/70916 , G03F7/70983 , H05G2/005 , H05G2/008
摘要： Devices are disclosed herein which may comprise a vessel; a material disposed in the vessel for creating an EUV light emitting plasma at a plasma site, the plasma generating debris; a near normal incidence EUV reflective optic disposed in the vessel; and a source of a magnetic field for deflecting debris in the vessel to protect the optic, the source positioned to interpose the optic between the source and the plasma site.
摘要翻译： 本文公开的装置可以包括容器; 设置在容器中的用于在等离子体位置处产生EUV发光等离子体的材料，等离子体产生碎片; 设置在容器中的近似正常入射的EUV反射光学器件; 以及用于偏转容器中的碎屑以保护光学元件的磁场源，所述源被定位成将光学元件插入在源和等离子体位置之间。
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94.发明授权公开(公告)号：US08519366B2
公开(公告)日：2013-08-27
申请号：US12221822
申请日：2008-08-06
IPC分类号： H05G2/00
CPC分类号： H05G2/003 , G03F7/70033 , G03F7/70858 , G03F7/70916 , G03F7/70983 , H05G2/005 , H05G2/008
摘要： Devices are disclosed herein which may comprise a vessel; a material disposed in the vessel for creating an EUV light emitting plasma at a plasma site, the plasma generating debris; a near normal incidence EUV reflective optic disposed in the vessel; and a source of a magnetic field for deflecting debris in the vessel to protect the optic, the source positioned to interpose the optic between the source and the plasma site.
摘要翻译： 本文公开的装置可以包括容器; 设置在容器中的用于在等离子体位置处产生EUV发光等离子体的材料，等离子体产生碎片; 设置在容器中的近似正常入射的EUV反射光学器件; 以及用于偏转容器中的碎屑以保护光学元件的磁场源，所述源被定位成将光学元件插入在源和等离子体位置之间。
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公开(公告)号：US07039086B2
公开(公告)日：2006-05-02
申请号：US10631349
申请日：2003-07-30
申请人： John P. Fallon , John A. Rule , Robert N. Jacques , Jacob Lipcon , Richard L. Sandstrom , William N. Partlo , Alexander I. Ershov , Toshihiko Ishihara , John Meisner , Richard M. Ness , Paul C. Melcher
发明人： John P. Fallon , John A. Rule , Robert N. Jacques , Jacob Lipcon , Richard L. Sandstrom , William N. Partlo , Alexander I. Ershov , Toshihiko Ishihara , John Meisner , Richard M. Ness , Paul C. Melcher
IPC分类号： H01S3/22
CPC分类号： H01S3/225 , G03F7/70025 , G03F7/70041 , H01S3/0057 , H01S3/03 , H01S3/036 , H01S3/0381 , H01S3/09702 , H01S3/1055 , H01S3/2258 , H01S3/2333
摘要： The present invention provides a control system for a modular high repetition rate two discharge chamber ultraviolet gas discharge laser. In preferred embodiments, the laser is a production line machine with a master oscillator producing a very narrow band seed beam which is amplified in the second discharge chamber.Novel control features specially adapted for a two-chamber gas discharge laser system include: (1) pulse energy controls, with nanosecond timing precision (2) precision pulse to pulse wavelength controls with high speed and extreme speed wavelength tuning (3) fast response gas temperature control and (4) F2 injection controls with novel learning algorithm.
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公开(公告)号：US06690704B2
公开(公告)日：2004-02-10
申请号：US10210761
申请日：2002-07-31
申请人： John P. Fallon , Richard L. Sandstrom , William N. Partlo , Alexander I. Ershov , Toshihiko Ishihara , John Meisner , Richard M. Ness , Paul C. Melcher , John A. Rule , Robert N. Jacques
发明人： John P. Fallon , Richard L. Sandstrom , William N. Partlo , Alexander I. Ershov , Toshihiko Ishihara , John Meisner , Richard M. Ness , Paul C. Melcher , John A. Rule , Robert N. Jacques
IPC分类号： H01S322
CPC分类号： H01S3/2333 , G03F7/70025 , G03F7/70041 , G03F7/70575 , G03F7/70933 , H01S3/0057 , H01S3/03 , H01S3/036 , H01S3/038 , H01S3/0385 , H01S3/041 , H01S3/08004 , H01S3/08009 , H01S3/08036 , H01S3/0943 , H01S3/097 , H01S3/09702 , H01S3/09705 , H01S3/0971 , H01S3/0975 , H01S3/104 , H01S3/105 , H01S3/1305 , H01S3/134 , H01S3/139 , H01S3/22 , H01S3/2207 , H01S3/2251 , H01S3/2256 , H01S3/2258 , H01S3/2366
摘要： The present invention provides a control system for a modular high repetition rate two discharge chamber ultraviolet gas discharge laser. In preferred embodiments, the laser is a production line machine with a master oscillator producing a very narrow band seed beam which is amplified in the second discharge chamber. Feedback timing control techniques are provided for controlling the relative timing of the discharges in the two chambers with an accuracy in the range of about 2 to 5 billionths of a second even in burst mode operation. This MOPA system is capable of output pulse energies approximately double the comparable single chamber laser system with greatly improved beam quality.
摘要翻译： 本发明提供了一种用于模块化高重复率两放电室紫外线气体放电激光器的控制系统。 在优选实施例中，激光器是具有主振荡器的生产线机器，该主振荡器产生在第二放电室中放大的非常窄的带状晶体束。 提供了反馈定时控制技术，即使在脉冲串模式操作中，也可以精确地控制两个室中的放电的相对定时，其精确度在大约2至50亿分之一秒的范围内。 该MOPA系统能够以大大提高的光束质量将输出脉冲能量大约增加到相当的单室激光器系统的两倍。
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公开(公告)号：US06549551B2
公开(公告)日：2003-04-15
申请号：US09848043
申请日：2001-05-03
IPC分类号： H01S300
CPC分类号： H01S3/2366 , G03F7/70025 , G03F7/70041 , G03F7/70483 , G03F7/70575 , H01S3/0057 , H01S3/03 , H01S3/036 , H01S3/038 , H01S3/0385 , H01S3/041 , H01S3/08004 , H01S3/08009 , H01S3/0943 , H01S3/097 , H01S3/09702 , H01S3/09705 , H01S3/0971 , H01S3/10092 , H01S3/139 , H01S3/22 , H01S3/2207 , H01S3/223 , H01S3/225 , H01S3/2258 , H01S3/2325 , H01S3/2333
摘要： A narrow band laser system having two laser subsystems. The first laser subsystem is configured to provide a very narrow band pulsed output beam which is used to injection seed the second laser subsystem where the narrow band pulsed seed beam is amplified to produce a narrow band pulsed output beam. A pulse power supply is provided which is specially configured to precisely time the discharges in the two laser subsystem so that the discharges are properly synchronized. Preferred embodiments include a pulse power system with a pulse transformer unit having two sets of transformer cores. A single upstream pulse compression circuit provides high voltage pulses in parallel to the primary windings of all of the cores in both sets. Separate secondary conductors (one passing through one set of cores and the other passing through the other set of cores) provide very high voltage pulses respectively to separate downstream circuits supplying discharge pulses to the electrodes in each of two separate laser chambers. Preferred embodiments include KrF, ArF and F2 systems. In these preferred embodiments, line narrowing may be accomplished within the resonant cavity of the seed laser or the output of the seed laser could be line narrowed using a pre-gain filter.
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公开(公告)号：US20100024980A1
公开(公告)日：2010-02-04
申请号：US12587258
申请日：2009-10-05
IPC分类号： C23F1/08
CPC分类号： H05G2/003 , B82Y10/00 , G03F7/70033 , H05G2/005 , H05G2/008
摘要： An EUV light source is disclosed that may include a laser source, e.g. CO2 laser, a plasma chamber, and a beam delivery system for passing a laser beam from the laser source into the plasma chamber. Embodiments are disclosed which may include one or more of the following; a bypass line may be provided to establish fluid communication between the plasma chamber and the auxiliary chamber, a focusing optic, e.g. mirror, for focusing the laser beam to a focal spot in the plasma chamber, a steering optic for steering the laser beam focal spot in the plasma chamber, and an optical arrangement for adjusting focal power.
摘要翻译： 公开了一种EUV光源，其可以包括例如激光源。 CO2激光器，等离子体室和用于将激光束从激光源传递到等离子体室中的光束传送系统。 公开了可以包括以下中的一个或多个的实施例; 可以提供旁路管线以建立等离子体室和辅助室之间的流体连通，聚焦光学器件例如。 用于将激光束聚焦到等离子体室中的焦点的反射镜，用于转向等离子体室中的激光束焦斑的转向光学元件，以及用于调整焦度的光学装置。
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公开(公告)号：US06590922B2
公开(公告)日：2003-07-08
申请号：US09879311
申请日：2001-06-12
申请人： Eckehard D. Onkels , Richard L. Sandstrom , Richard M. Ness , William N. Partlo , Alexander I. Ershov , Choonghoon Oh
发明人： Eckehard D. Onkels , Richard L. Sandstrom , Richard M. Ness , William N. Partlo , Alexander I. Ershov , Choonghoon Oh
IPC分类号： H01S322
CPC分类号： G03F7/70575 , G03F7/70025 , G03F7/70041 , G03F7/70483 , H01S3/03 , H01S3/036 , H01S3/038 , H01S3/0385 , H01S3/041 , H01S3/08004 , H01S3/08009 , H01S3/082 , H01S3/0835 , H01S3/0943 , H01S3/097 , H01S3/09702 , H01S3/09705 , H01S3/0971 , H01S3/10092 , H01S3/139 , H01S3/22 , H01S3/2207 , H01S3/223 , H01S3/225 , H01S3/2258 , H01S3/2325 , H01S3/2366
摘要： A narrow band F2 laser system having two laser subsystems. The first laser subsystem is configured to provide a very narrow band pulsed beam at a first narrow wavelength range corresponding to a first natural emission line of the F2 laser system. This beam is injected into the gain medium of the second laser subsystem in a first direction where the beam is amplified to produce a narrow band pulsed output beam. The seed laser subsystem also produces a second pulsed beam at a second wavelength range corresponding to a second natural emission line of the F2 laser. This line is injected into the gain medium of the second laser subsystem in a second direction opposite said first direction. The second beam is amplified in the gain medium of the second laser subsystem depleting the gain medium of gain potential at the second wavelength range. (This amplified second beam is preferably wasted.) With the gain potential at the second undesired wavelength the range thus reduced the portion of light at the second wavelength range in the output beam is greatly reduced.
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公开(公告)号：US06381257B1
公开(公告)日：2002-04-30
申请号：US09473795
申请日：1999-12-28
IPC分类号： H01S322
CPC分类号： H01S3/10092 , G03F7/70025 , G03F7/70041 , G03F7/70483 , G03F7/70575 , H01S3/03 , H01S3/036 , H01S3/0385 , H01S3/08004 , H01S3/08009 , H01S3/0943 , H01S3/097 , H01S3/09705 , H01S3/0971 , H01S3/139 , H01S3/223 , H01S3/225 , H01S3/2258 , H01S3/2308 , H01S3/2325 , H01S3/2333 , H01S3/2366
摘要： A tunable injection seeded very narrow band F2 lithography laser. The laser combines modular design features of prior art long life reliable lithography lasers with special techniques to produce a seed beam operated in a first gain medium which beam is used to stimulate narrow band lasing in a second gain medium to produce a very narrow band laser beam useful for integrated circuit lithography. In a preferred embodiment, two tunable etalon output couplers are used to narrow band an F2 laser and the output of the seed laser is amplified in an F2 amplifier.
摘要翻译： 可调式注入种子非常窄的F2光刻激光。 激光器将现有技术的长寿命可靠光刻激光器的模块化设计特征与特殊技术相结合，以产生在第一增益介质中操作的种子束，该光束用于在第二增益介质中刺激窄带激光，以产生非常窄的带状激光束 适用于集成电路光刻。 在优选实施例中，使用两个可调谐的标准具输出耦合器来使F2激光器窄带化，种子激光器的输出在F2放大器中被放大。
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