公开(公告)号：US11830734B2

公开(公告)日：2023-11-28

申请号：US17324352

申请日：2021-05-19

申请人： Applied Materials, Inc.

发明人： Huiyuan Wang ,  Susmit Singha Roy ,  Abhijit Basu Mallick

IPC分类号： H01L21/02 ,  H01L21/3205

CPC分类号： H01L21/02532 ,  H01L21/0243 ,  H01L21/0245 ,  H01L21/0262 ,  H01L21/02381 ,  H01L21/02488 ,  H01L21/02502 ,  H01L21/02612 ,  H01L21/02658 ,  H01L21/3205

摘要： Exemplary methods of semiconductor processing may include providing a silicon-containing precursor to a processing region of a semiconductor processing chamber. A substrate may be disposed within the processing region of the semiconductor processing chamber. The methods may include depositing a silicon-containing material on the substrate. Subsequent a first period of time, the methods may include providing a germanium-containing precursor to the processing region of the semiconductor processing chamber. The methods may include thermally reacting the silicon-containing precursor and the germanium-containing precursor at a temperature greater than or about 400° C. The methods may include forming a silicon-and-germanium-containing layer on the substrate.

公开(公告)号：US11817320B2

公开(公告)日：2023-11-14

申请号：US16554834

申请日：2019-08-29

申请人： Applied Materials, Inc.

发明人： Susmit Singha Roy ,  Kelvin Chan ,  Hien Minh Le ,  Sanjay Kamath ,  Abhijit Basu Mallick ,  Srinivas Gandikota ,  Karthik Janakiraman

IPC分类号： C23C16/50 ,  H01L21/285 ,  H01L21/02 ,  C23C16/06 ,  C23C16/02 ,  C23C16/40 ,  C23C16/505 ,  C23C28/00 ,  H01L21/3205 ,  H01L21/768 ,  H10B43/27

CPC分类号： H01L21/28506 ,  C23C16/0272 ,  C23C16/06 ,  C23C16/402 ,  C23C16/505 ,  C23C28/322 ,  C23C28/34 ,  C23C28/345 ,  C23C28/42 ,  H01L21/0245 ,  H01L21/02164 ,  H01L21/02274 ,  H01L21/02304 ,  H01L21/02315 ,  H01L21/02458 ,  H01L21/02491 ,  H01L21/02697 ,  H01L21/28556 ,  H01L21/28568 ,  H01L21/32051 ,  H01L21/76876 ,  H10B43/27

摘要： Implementations described herein generally relate to a method for forming a metal layer and to a method for forming an oxide layer on the metal layer. In one implementation, the metal layer is formed on a seed layer, and the seed layer helps the metal in the metal layer nucleate with small grain size without affecting the conductivity of the metal layer. The metal layer may be formed using plasma enhanced chemical vapor deposition (PECVD) and nitrogen gas may be flowed into the processing chamber along with the precursor gases. In another implementation, a barrier layer is formed on the metal layer in order to prevent the metal layer from being oxidized during subsequent oxide layer deposition process. In another implementation, the metal layer is treated prior to the deposition of the oxide layer in order to prevent the metal layer from being oxidized.

公开(公告)号：US20230207314A1

公开(公告)日：2023-06-29

申请号：US17562441

申请日：2021-12-27

申请人： Applied Materials, Inc.

发明人： Chandan Das ,  Susmit Singha Roy ,  Bhaskar Jyoti Bhuyan ,  Supriya Ghosh ,  Jiecong Tang ,  John Sudijono ,  Abhijit Basu Mallick ,  Mark Saly

IPC分类号： H01L21/02

CPC分类号： H01L21/02565 ,  H01L21/02614

摘要： Transition metal dichalcogenide films and methods for depositing transition metal dichalcogenide films on a substrate are described. Methods for converting transition metal oxide films to transition metal dichalcogenide films are also described. The substrate is exposed to a metal precursor and an oxidant to form a transition metal oxide film; the transition metal oxide film is exposed to a chalcogenide precursor to form the transition metal dichalcogenide film.

公开(公告)号：US20230090426A1

公开(公告)日：2023-03-23

申请号：US17947318

申请日：2022-09-19

申请人： Applied Materials, Inc.

发明人： Sieun Chae ,  Susmit Singha Roy ,  Abhijit Basu Mallick

IPC分类号： H01L21/02 ,  H01L21/477

摘要： Exemplary semiconductor processing methods may include providing a silicon-containing precursor to a processing region of a semiconductor processing chamber. A substrate may be disposed within the processing region of the semiconductor processing chamber. The methods may include forming a plasma of the silicon-containing precursor in the processing region and forming a first layer of material on the substrate. The first layer of material may include silicon oxide. The methods may include providing a germanium-containing precursor to the processing region of the semiconductor processing chamber and forming a plasma of the germanium-containing precursor in the processing region. Forming the plasma of the germanium-containing precursor may be performed at a plasma power of greater than or about 500 W. The methods may include forming a second layer of material on the substrate. The second layer of material may include germanium oxide.

公开(公告)号：US11562904B2

公开(公告)日：2023-01-24

申请号：US16934730

申请日：2020-07-21

申请人： Applied Materials, Inc.

发明人： Lakmal Charidu Kalutarage ,  Mark Joseph Saly ,  Bhaskar Jyoti Bhuyan ,  Thomas Joseph Knisley ,  Kelvin Chan ,  Regina Germanie Freed ,  David Michael Thompson ,  Susmit Singha Roy ,  Madhur Sachan

IPC分类号： H01L21/033 ,  H01L21/02

摘要： Embodiments disclosed herein include methods of depositing a metal oxo photoresist using dry deposition processes. In an embodiment, the method comprises forming a first metal oxo film on the substrate with a first vapor phase process including a first metal precursor vapor and a first oxidant vapor, and forming a second metal oxo film over the first metal oxo film with a second vapor phase process including a second metal precursor vapor and a second oxidant vapor.

公开(公告)号：US20220189824A1

公开(公告)日：2022-06-16

申请号：US17119648

申请日：2020-12-11

申请人： Applied Materials, Inc.

发明人： Huiyuan Wang ,  Susmit Singha Roy ,  Takehito Koshizawa ,  Bo Qi ,  Abhijit Basu Mallick

IPC分类号： H01L21/768 ,  H01L21/311 ,  C23C16/40 ,  C23C16/455 ,  C23C16/56

摘要： Methods for forming defect-free gap fill materials comprising germanium oxide are disclosed. In some embodiments, the gap fill material is deposited by exposing a substrate surface to a germane precursor and an oxidant simultaneously. The germane precursor may be flowed intermittently. The substrate may also be exposed to a second oxidant to increase the relative concentration of oxygen within the gap fill material.

公开(公告)号：US20220186365A1

公开(公告)日：2022-06-16

申请号：US17119655

申请日：2020-12-11

申请人： Applied Materials, Inc.

发明人： Huiyuan Wang ,  Susmit Singha Roy ,  Takehito Koshizawa ,  Bo Qi ,  Abhijit Basu Mallick

IPC分类号： C23C16/40

摘要： Methods for forming coating films comprising germanium oxide are disclosed. In some embodiments, the films are super-conformal to a feature on the surface of a substrate. The films are deposited by exposing a substrate surface to a germane precursor and an oxidant simultaneously. The germane precursor may be flowed intermittently. The substrate may also be exposed to a second oxidant to increase the relative concentration of oxygen within the super-conformal film.

公开(公告)号：US20220157654A1

公开(公告)日：2022-05-19

申请号：US17587525

申请日：2022-01-28

申请人： Applied Materials, Inc.

发明人： Srinivas Gandikota ,  Steven C.H. Hung ,  Srinivas D. Nemani ,  Yixiong Yang ,  Susmit Singha Roy ,  Nikolaos Bekiaris

IPC分类号： H01L21/768 ,  H01L23/48

摘要： A method of forming an electronic device is disclosed. The method comprises forming depositing a metal on a substrate, the metal comprising one or more of copper (Cu), titanium (Ti), or tantalum (Ta). A metal cap is deposited on the metal. The metal cap comprises one or more of molybdenum (Mo), ruthenium (Ru), iridium (Ir), rhodium (Rh), palladium (Pd), silver (Ag), osmium (Os), platinum (Pt), or gold (Au). The substrate is then exposed to an anneal process, e.g., a hydrogen high-pressure anneal. The formation of the metal cap on the metal minimizes parasitic adsorption of hydrogen by the underlying metal.

公开(公告)号：US11289374B2

公开(公告)日：2022-03-29

申请号：US16467669

申请日：2017-11-29

申请人： Applied Materials, Inc.

发明人： Yihong Chen ,  Kelvin Chan ,  Xinliang Lu ,  Srinivas Gandikota ,  Yong Wu ,  Susmit Singha Roy ,  Chia Cheng Chin

IPC分类号： H01L21/76 ,  H01L21/768 ,  C23C16/02 ,  C23C16/455 ,  C23C16/458 ,  H01L21/285 ,  H01L21/687 ,  H01L23/532

摘要： Processing methods comprise forming a gap fill layer comprising tungsten or molybdenum by exposing a substrate surface having at least one feature thereon sequentially to a metal precursor and a reducing agent comprising hydrogen to form the gap fill layer in the feature, wherein there is not a nucleation layer between the substrate surface and the gap fill layer.

公开(公告)号：US11177164B2

公开(公告)日：2021-11-16

申请号：US16638820

申请日：2018-08-06

申请人： Applied Materials, Inc.

发明人： Susmit Singha Roy ,  Praburam Gopalraja ,  Abhijit Basu Mallick ,  Srinivas Gandikota

IPC分类号： H01L21/02 ,  H01L21/768 ,  H01L21/285 ,  H01L21/3105 ,  H01L21/311 ,  H01L21/321

摘要： Processing methods to form self-aligned high aspect ratio features are described. The methods comprise depositing a metal film on a structured substrate, volumetrically expanding the metal film, depositing a second film between the expanded pillars and optionally recessing the pillars and repeating the process to form the high aspect ratio features.