摘要:
A rotary lock block type drilling riser connector has a main body connection part and control pipeline connection parts. A driving ring is set between flanges, a plurality of fan-shaped grooves are set on the lower end of the flange of the upper joint, each fan-shaped groove having a lock block therein; each lock block is slidably connected with a T-shaped elongated slot of the upper joint; the driving ring is fixedly connected with the flange upwardly, many segments of the horizontal T-shaped slots are evenly distributed in the inner surface of the driving ring, another screw hole is provided in the outer circumferential surface of the lock block, and the driving ring is slidably connected with the lock block in the circumferential direction.
摘要:
The present invention discloses that under modified chemical vapor deposition (mCVD) conditions an epitaxial silicon film may be formed by exposing a substrate contained within a chamber to a relatively high carrier gas flow rate in combination with a relatively low silicon precursor flow rate at a temperature of less than about 550° C. and a pressure in the range of about 10 mTorr-200 Torr. Furthermore, the crystalline Si may be in situ doped to contain relatively high levels of substitutional carbon by carrying out the deposition at a relatively high flow rate using tetrasilane as a silicon source and a carbon-containing gas such as dodecalmethylcyclohexasilane or tetramethyldisilane under modified CVD conditions.
摘要:
A rotary lock block type drilling riser connector, including a main body connection part and control pipeline connection parts, the structure of main body connection part is: a driving ring is set between the flanges of an upper and a lower joint, a plurality of fan-shaped grooves are set on the lower end of the flange of the upper joint, each fan-shaped groove having a lock block (6) therein, the driving ring (4) surrounds outer sides of all the lock blocks, matching crimping circular grooves are arranged for each lock block and the lower joint; each lock block is slidably connected with a T-shaped elongated slot of the upper joint through a T-shaped screw; the driving ring is fixedly connected with the flange upwardly, many segments of the horizontal T-shaped slots are evenly distributed in the inner surface of the driving ring along a circumference direction, another screw hole is provided in the outer circumferential surface of the lock block, and the driving ring is slidably connected with the lock block in the circumferential direction by a T-shaped screw. The connector is simple in structure and convenient to operation.
摘要:
An improved silicon carbon film structure is disclosed. The film structure comprises multiple layers of silicon carbon and silicon. The multiple layers form stress film structures that have increased substitutional carbon content, and serve to induce stresses that improve carrier mobility for certain types of field effect transistors.
摘要:
Embodiments of the present invention provide a method and an apparatus for determining reference signals. A User Equipment (UE) obtains group hopping information and/or sequence hopping information of a UE-specific reference signal from cell-specific system information broadcasted by an eNB. The UE receives UE-specific control information transmitted by the eNB to the UE. The UE generates a UE-specific reference signal of a first slot according to the group hopping information and/or sequence hopping information of the broadcasted cell-specific reference signal. If the UE-specific control information indicates that group hopping and/or sequence hopping of UE-specific reference signals is disabled, the UE generates a UE-specific reference signal of a second slot in a same frame with the first slot according to the UE-specific reference signal of the first slot. The UE is able to determine the reference signals when multiple UEs share physical resource blocks.
摘要:
A signal processing method in an MIMO multi-carrier system is disclosed comprising: receiving by a receiver signals of a plurality of sub-carriers transmitted from a transmitter; dividing the sub-carriers into a plurality of sub-carrier blocks according to the correlation between adjacent sub-carriers, each sub-carrier block containing K sub-carriers; selecting a feedback sub-carrier pre-coding matrix ( ) and a rotation matrix ( ) for each sub-carrier block, and then sending the information on the pre-coding matrix and the rotation matrix back to the transmitting end. The present invention provides the method and device for effectively settling the feedback problem in an MIMO/OFDMA system, thereby greatly reducing the number of pre-coding weight matrices needed to feed back to the transmitting device.
摘要:
A method and apparatus for transmitting an uplink Scheduling Request (SR) are provided. The method includes, obtaining a SR subframe configuration by receiving signaling, and transmitting SR information to a Base Station (BS) by using physical resources of another non-SR channel for transmitting other uplink control information. By applying the present invention, the SR, ACKnowledgement/Non-ACKnowledgement (ACK/NACK) or Channel Quality Indicator (CQI) information is returned to a BS when low Constant Modulus (CM) characteristic of an uplink Component Carrier (CC) is ensured.
摘要:
Disclosed is a Ce-based composite oxide catalyst for selective catalytic reducing nitrogen oxides with ammonia, which comprises Ce oxide and at least one oxide of transition metal except Ce. The Ce-based composite oxide catalyst is prepared by a simple method which uses non-toxic and harmless raw materials, and it has the following advantages: high catalytic activity, and excellent selectivity for generating nitrogen etc. The catalyst can be applied in catalytic cleaning plant for nitrogen oxides from mobile and stationary sources.
摘要:
Disclosed is a Ce-based composite oxide catalyst for selective catalytic reducing nitrogen oxides with ammonia, which comprises Ce oxide and at least one oxide of transition metal except Ce. The Ce-based composite oxide catalyst is prepared by a simple method which uses non-toxic and harmless raw materials, and it has the following advantages: high catalytic activity, and excellent selectivity for generating nitrogen etc. The catalyst can be applied in catalytic cleaning plant for nitrogen oxides from mobile and stationary sources.
摘要:
A method of fabricating a semiconductor device that includes providing a substrate having at least a first semiconductor layer atop a dielectric layer, wherein the first semiconductor layer has a first thickness of less than 10 nm. The first semiconductor layer is etched with a halide based gas at a temperature of less than 675° C. to a second thickness that is less than the first thickness. A second semiconductor layer is epitaxially formed on an etched surface of the first semiconductor layer. A gate structure is formed directly on the second semiconductor layer. A source region and a drain region is formed on opposing sides of the gate structure.