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公开(公告)号:US20160342469A1
公开(公告)日:2016-11-24
申请号:US14717254
申请日:2015-05-20
Applicant: International Business Machines Corporation
Inventor: Michael B. Healy , Hillery C. Hunter , Charles A. Kilmer , Kyu-hyoun Kim , Warren E. Maule , Adam J. McPadden
CPC classification number: H03M13/618 , G06F11/1016
Abstract: A memory management system and a method of managing a memory device are described. The system includes a memory device with a memory array to store data and associated error correction coding (ECC) bits and an extended correction table. The extended correction table stores error information additional to the ECC bits for one or more of the data in the memory array. The system also includes a controller to control the memory device to write and read the data.
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公开(公告)号:US20160328285A1
公开(公告)日:2016-11-10
申请号:US14724901
申请日:2015-05-29
Applicant: International Business Machines Corporation
Inventor: Michael B. Healy , Hillery C. Hunter , Charles A. Kilmer , Kyu-hyoun Kim , Warren E. Maule
CPC classification number: G06F11/1008 , G06F3/0619 , G06F3/064 , G06F3/0673 , G06F11/08 , G06F11/1032 , G06F11/1048 , G06F11/106 , G06F11/1072 , G06F11/1076 , G11C7/1006 , G11C7/1051 , G11C29/52 , G11C2029/0411
Abstract: A memory management system and method of managing output data resulting from a memory device storing raw data and error correction coding (ECC) bits are described. The system includes a controller to receive a read command and control a memory device based on the read command, the memory device to store raw data and error correction coding (ECC) bits and output the raw data and the ECC bits corresponding with memory addresses specified in the read command, and an ECC decoder to output an error vector associated with the memory addresses based on the raw data and the ECC bits corresponding with the memory addresses output by the memory device, the error vector associated with the memory addresses indicating errors in the raw data corresponding with the memory addresses. The system also includes a multiplexer (MUX) to output the error vector based on a selection indicated in the read command.
Abstract translation: 描述了存储管理系统和管理由存储原始数据和纠错编码(ECC)位的存储器件产生的输出数据的方法。 该系统包括控制器,用于接收读取命令并基于读取命令控制存储器件,存储器件存储原始数据和纠错编码(ECC)位,并输出与指定的存储器地址对应的原始数据和ECC位 在读取命令中,以及ECC解码器,基于原始数据和与存储器件输出的存储器地址相对应的ECC位来输出与存储器地址相关联的错误向量,与存储器地址相关联的错误向量指示错误 原始数据对应于存储器地址。 该系统还包括多路复用器(MUX),用于根据读取命令中指示的选择来输出误差向量。
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公开(公告)号:US20160328284A1
公开(公告)日:2016-11-10
申请号:US14707024
申请日:2015-05-08
Applicant: International Business Machines Corporation
Inventor: Michael B. Healy , Hillery C. Hunter , Charles A. Kilmer , Kyu-hyoun Kim , Warren E. Maule
CPC classification number: G06F11/1004 , G06F3/0619 , G06F3/064 , G06F3/0653 , G06F3/0659 , G06F3/0673 , G06F3/0683 , G06F11/00 , G06F11/1048 , G06F11/1076 , G06F12/00 , G06F13/00
Abstract: Classifying memory errors may include accessing data from a location within a memory array of a memory device. The memory array may include at least one bit field to store memory error classification information. One or more memory errors in the data may be determined. One or more memory errors may further be classified. In response to the classifying, memory error classification information may be stored as one or more bit values within the bit field.
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公开(公告)号:US20160180899A1
公开(公告)日:2016-06-23
申请号:US14573142
申请日:2014-12-17
Applicant: International Business Machines Corporation
IPC: G11C7/10 , G11C11/406
CPC classification number: G11C7/103 , G06F13/1668 , G11C11/408
Abstract: A method and apparatus for implementing row hammer avoidance in a dynamic random access memory (DRAM) in a computer system. Hammer detection logic identifies a hit count of repeated activations at a specific row in the DRAM. Monitor and control logic receiving an output of the hammer detection logic compares the identified hit count with a programmable threshold value. Responsive to a specific count as determined by the programmable threshold value, the monitor and control logic captures the address where a selected row hammer avoidance action is provided.
Abstract translation: 一种用于在计算机系统中的动态随机存取存储器(DRAM)中实现行锤避免的方法和装置。 锤检测逻辑识别DRAM中特定行重复激活的命中计数。 接收锤检测逻辑的输出的监视和控制逻辑将识别的命中计数与可编程阈值进行比较。 响应于由可编程阈值确定的特定计数,监视和控制逻辑捕获提供所选行锤回避动作的地址。
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95.
公开(公告)号:US09263157B2
公开(公告)日:2016-02-16
申请号:US14138838
申请日:2013-12-23
Applicant: International Business Machines Corporation
Inventor: Charles A. Kilmer , Warren E. Maule , Saravanan Sethuraman
IPC: G11C29/50 , G11C29/00 , G11C29/02 , H01L23/538 , H01L25/065
CPC classification number: G11C29/50004 , G11C29/022 , G11C29/025 , G11C29/70 , G11C29/702 , H01L23/481 , H01L23/49816 , H01L23/5384 , H01L24/13 , H01L24/16 , H01L25/0652 , H01L25/0657 , H01L25/18 , H01L2224/13025 , H01L2224/131 , H01L2224/13188 , H01L2224/16145 , H01L2224/16146 , H01L2224/16225 , H01L2224/16227 , H01L2225/06513 , H01L2225/06517 , H01L2225/06541 , H01L2225/06565 , H01L2924/15192 , H01L2924/15311 , H01L2924/014
Abstract: A method for testing a stacked memory device having a plurality of memory chips connected to and arranged on top of a logic chip for a connection defect is disclosed. The method may include testing a memory chip by writing a data value into a first location in the memory chip, reading a data value from the first location, detecting a first bit error and recording a bit number of the first bit error. The method may also include testing the memory chip by writing a data value into a second location in the memory chip, reading a data value from the second location in the memory chip, detecting a second bit error and recording a bit number of the second bit error. The method may also include replacing a connection common to the first and second bit errors with a spare connection.
Abstract translation: 公开了一种用于测试连接到并布置在用于连接缺陷的逻辑芯片的顶部上的多个存储器芯片的堆叠存储器件的方法。 该方法可以包括通过将数据值写入存储器芯片中的第一位置,从第一位置读取数据值,检测第一位错误并记录第一位错误的位数来测试存储器芯片。 该方法还可以包括通过将数据值写入存储器芯片中的第二位置来测试存储器芯片,从存储器芯片中的第二位置读取数据值,检测第二位错误并记录第二位的位数 错误。 该方法还可以包括用备用连接替换与第一和第二位错误共同的连接。
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公开(公告)号:US09146882B2
公开(公告)日:2015-09-29
申请号:US13758442
申请日:2013-02-04
Applicant: International Business Machines Corporation
Inventor: Michele M. Franceschini , Hillery C. Hunter , Ashish Jagmohan , Charles A. Kilmer , Kyu-hyoun Kim , Luis A. Lastras-Montano , Warren E. Maule
CPC classification number: G06F12/16 , G06F12/1483 , G06F21/00 , G06F21/62 , G06F2221/2143
Abstract: A memory device may be equipped with quick erase capability to secure the contents of the memory device. The quick erase capability may effectively permanently disable access to data stored in the memory device instantaneously upon a command being issued, making all previous data written to the memory device unreadable. The quick erase capability may allow use of the memory device for new write operations and for reading the newly written data immediately once the erase command is received and executed. The quick erase capability may begin a physical erase process of data not newly written without altering other aspects of the quick erase. Aspects may be accomplished with one or more bits per row in a memory device.
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公开(公告)号:US20150179285A1
公开(公告)日:2015-06-25
申请号:US14248480
申请日:2014-04-09
Applicant: International Business Machines Corporation
Inventor: Charles A. Kilmer , Warren E. Maule , Saravanan Sethuraman
IPC: G11C29/50 , H01L25/065 , H01L23/538 , G11C29/00
CPC classification number: G11C29/50004 , G11C29/022 , G11C29/025 , G11C29/70 , G11C29/702 , H01L23/481 , H01L23/49816 , H01L23/5384 , H01L24/13 , H01L24/16 , H01L25/0652 , H01L25/0657 , H01L25/18 , H01L2224/13025 , H01L2224/131 , H01L2224/13188 , H01L2224/16145 , H01L2224/16146 , H01L2224/16225 , H01L2224/16227 , H01L2225/06513 , H01L2225/06517 , H01L2225/06541 , H01L2225/06565 , H01L2924/15192 , H01L2924/15311 , H01L2924/014
Abstract: A method for testing a stacked memory device having a plurality of memory chips connected to and arranged on top of a logic chip for a connection defect is disclosed. The method may include testing a memory chip by writing a data value into a first location in the memory chip, reading a data value from the first location, detecting a first bit error and recording a bit number of the first bit error. The method may also include testing the memory chip by writing a data value into a second location in the memory chip, reading a data value from the second location in the memory chip, detecting a second bit error and recording a bit number of the second bit error. The method may also include replacing a connection common to the first and second bit errors with a spare connection.
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公开(公告)号:US20140223117A1
公开(公告)日:2014-08-07
申请号:US13792720
申请日:2013-03-11
Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION
Inventor: Michele M. Franceschini , Hillery C. Hunter , Ashish Jagmohan , Charles A. Kilmer , Kyu-hyoun Kim , Luis A. Lastras-Montano , Warren E. Maule
IPC: G06F12/02
CPC classification number: G06F12/16 , G06F12/1483 , G06F21/00 , G06F21/62 , G06F2221/2143
Abstract: A memory device may be equipped with quick erase capability to secure the contents of the memory device. The quick erase capability may effectively permanently disable access to data stored in the memory device instantaneously upon a command being issued, making all previous data written to the memory device unreadable. The quick erase capability may allow use of the memory device for new write operations and for reading the newly written data immediately once the erase command is received and executed. The quick erase capability may begin a physical erase process of data not newly written without altering other aspects of the quick erase. Aspects may be accomplished with one or more bits per row in a memory device.
Abstract translation: 存储器件可以配备快速擦除功能以保护存储器件的内容。 快速擦除功能可以在发出命令时立即有效地永久地禁止存储在存储设备中的数据,使得写入存储器设备的所有以前的数据不可读。 快速擦除功能可以允许使用存储器件进行新的写入操作,并且一旦接收和执行擦除命令就立即读取新写入的数据。 快速擦除功能可以开始不新写的数据的物理擦除过程,而不会改变快速擦除的其他方面。 方面可以用存储器件中的每行一个或多个比特来完成。
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99.
公开(公告)号:US20140117500A1
公开(公告)日:2014-05-01
申请号:US14150600
申请日:2014-01-08
Applicant: International Business Machines Corporation
Inventor: Joab D. Henderson , Kyu-hyoun Kim , Warren E. Maule , Kenneth L. Wright
IPC: H01L25/065
CPC classification number: H01L25/0657 , H01L23/481 , H01L23/498 , H01L24/13 , H01L24/14 , H01L24/16 , H01L24/17 , H01L2224/0401 , H01L2224/05009 , H01L2224/05027 , H01L2224/13014 , H01L2224/13021 , H01L2224/13025 , H01L2224/131 , H01L2224/14051 , H01L2224/1411 , H01L2224/1613 , H01L2224/16146 , H01L2224/17106 , H01L2224/73204 , H01L2225/06513 , H01L2225/06541 , H01L2924/00012 , H01L2924/00014 , H01L2924/014
Abstract: A method and structures are provided for implementing decoupling capacitors within a DRAM TSV stack. A DRAM is formed with a plurality of TSVs extending completely through the substrate and filled with a conducting material. A layer of glass is grown on both the top and bottom of the DRAM providing an insulator. A layer of metal is grown on each glass layer providing a conductor. The metal and glass layers are etched through to TSVs with a gap provided around the perimeter of via pads. A respective solder ball is formed on the TSVs to connect to another DRAM chip in the DRAM TSV stack. The metal layers are connected to at least one TSV by one respective solder ball and are connected to a voltage source and a dielectric is inserted between the metal layers in the DRAM TSV stack to complete the decoupling capacitor.
Abstract translation: 提供了一种用于在DRAM TSV堆栈内实现去耦电容器的方法和结构。 形成有多个完全延伸穿过衬底并填充有导电材料的TSV的DRAM。 在提供绝缘体的DRAM的顶部和底部都生长玻璃层。 在提供导体的每个玻璃层上生长一层金属。 金属和玻璃层被蚀刻到具有围绕通孔焊盘的周边设置的间隙的TSV。 在TSV上形成相应的焊球以连接到DRAM TSV堆叠中的另一个DRAM芯片。 金属层通过一个相应的焊球连接到至少一个TSV,并且连接到电压源,并且电介质插入在DRAM TSV堆叠中的金属层之间以完成去耦电容器。
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公开(公告)号:US20220027243A1
公开(公告)日:2022-01-27
申请号:US17496399
申请日:2021-10-07
Applicant: International Business Machines Corporation
Inventor: Stephen Glancy , Kyu-hyoun Kim , Warren E. Maule , Kevin M. Mcilvain
Abstract: A memory system for storing data is disclosed, the memory system including a plurality of memory devices configured to store data, each memory device having a plurality of bits, the memory devices configured and associated to work together as a rank to respond to a request; a memory control circuit associated with the plurality of memory devices and configured to output command and control signals to the plurality of memory devices; a detector for detecting a bit error in an operation; and a controller for remapping the bit error to a spare bit lane in response to the detector detecting the bit error.
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