公开(公告)号：US06267853B1

公开(公告)日：2001-07-31

申请号：US09350210

申请日：1999-07-09

申请人： Yezdi Dordi ,  Muhammad Atif Malik ,  Henan Hao ,  Timothy H. Franklin ,  Joe Stevens ,  Donald Olgado

发明人： Yezdi Dordi ,  Muhammad Atif Malik ,  Henan Hao ,  Timothy H. Franklin ,  Joe Stevens ,  Donald Olgado

IPC分类号： C25B1500

CPC分类号： C25D17/001 ,  C25D7/123 ,  H01L21/2885 ,  H05K3/241

摘要： The present invention provides an electro-chemical deposition system that is designed with a flexible architecture that is expandable to accommodate future designs and gap fill requirements and provides satisfactory throughput to meet the demands of other processing systems. The electro-chemical deposition system generally comprises a mainframe having a mainframe wafer transfer robot, a loading station disposed in connection with the mainframe, one or more processing cells disposed in connection with the mainframe, and an electrolyte supply fluidly connected to the one or more electrical processing cells. Preferably, the electro-chemical deposition system includes an edge bead removal/spin-rinse-dry (EBR/SRD) station disposed on the mainframe adjacent the loading station, a rapid thermal anneal chamber attached to the loading station, a seed layer repair station disposed on the mainframe, and a system controller for controlling the electro-chemical deposition process and the components of the electro-chemical deposition system.

摘要翻译： 本发明提供了一种电化学沉积系统，其被设计成具有可扩展以适应未来设计和间隙填充要求的柔性结构，并提供令人满意的生产量以满足其它处理系统的需求。 电化学沉积系统通常包括具有主机晶片传送机器人的主机，与主机连接设置的加载站，与主机连接设置的一个或多个处理单元，以及流体连接到该主机的一个或多个 电加工电池。 优选地，电化学沉积系统包括设置在与装载站相邻的主机上的边缘珠去除/旋转干燥（EBR / SRD）站，附接到装载站的快速热退火室，种子层修复站 设置在主机上，以及用于控制电化学沉积过程和电化学沉积系统的部件的系统控制器。

公开(公告)号：US06254760B1

公开(公告)日：2001-07-03

申请号：US09263649

申请日：1999-03-05

申请人： Ben Shen ,  Yezdi Dordi ,  George Birkmaier

发明人： Ben Shen ,  Yezdi Dordi ,  George Birkmaier

IPC分类号： G01F164

CPC分类号： C25D7/12 ,  C25D17/001 ,  H01L21/2885 ,  H05K3/241

摘要： The present invention generally provides an electro-chemical deposition system that is designed with a flexible architecture that is expandable to accommodate future designs rules and gap fill requirements and provides satisfactory throughput to meet the demands of other processing systems. The electro-chemical deposition system generally comprises a front-end loading station, a mainframe including one or more processing cells, and an electrolyte replenishing system fluidly connected to the one or more electrical processing cells. The electrolyte replenishing system comprises a main electrolyte supply tank and an analyzer module and dosing module coupled thereto. The analyzer module includes one or more chemical analyzers to monitor the concentrations of various chemicals in the main electrolyte supply tank. Information provided by the analyzer module is transmitted via a central control system to the dosing module. Source tanks in the dosing module communicate with the main supply tank to deliver the desired proportions of chemicals thereto. Preferably, the electrolyte analysis is performed continuously during processing to provide real-time data and electrolyte adjustments.

摘要翻译： 本发明通常提供一种电化学沉积系统，其被设计成具有可扩展以适应未来设计规则和间隙填充要求的柔性结构，并提供令人满意的吞吐量以满足其它处理系统的需求。 电化学沉积系统通常包括前端加载站，包括一个或多个处理单元的主框架和与该一个或多个电处理单元流体连接的电解质补充系统。 电解质补充系统包括主要电解质供应罐和与其耦合的分析器模块和计量模块。 分析仪模块包括一个或多个化学分析仪，用于监测主要电解质供应罐中各种化学物质的浓度。 由分析器模块提供的信息经由中央控制系统传送到计量模块。 计量模块中的来源罐与主供应罐连通，以将所需比例的化学品运送到其上。 优选地，在处理期间连续执行电解质分析以提供实时数据和电解质调节。

公开(公告)号：US08314027B2

公开(公告)日：2012-11-20

申请号：US13284709

申请日：2011-10-28

申请人： William Thie ,  John M. Boyd ,  Fritz C. Redeker ,  Yezdi Dordi ,  John Parks ,  Tiruchirapalli Arunagiri ,  Aleksander Owczarz ,  Todd Balisky ,  Clint Thomas ,  Jacob Wylie ,  Alan M. Schoepp

发明人： William Thie ,  John M. Boyd ,  Fritz C. Redeker ,  Yezdi Dordi ,  John Parks ,  Tiruchirapalli Arunagiri ,  Aleksander Owczarz ,  Todd Balisky ,  Clint Thomas ,  Jacob Wylie ,  Alan M. Schoepp

IPC分类号： H01L21/30 ,  C25D1/00

CPC分类号： H01L21/288 ,  C23C18/1619 ,  C23C18/1632 ,  H01L21/76873

摘要： A dry-in/dry-out system is disclosed for wafer electroless plating. The system includes an upper zone for wafer ingress/egress and drying operations. Proximity heads are provided in the upper zone to perform the drying operations. The system also includes a lower zone for electroless plating operations. The lower zone includes an electroless plating apparatus that implements a wafer submersion by fluid upwelling method. The upper and lower zones of the system are enclosed by a dual-walled chamber, wherein the inner wall is a chemically inert plastic and the outer wall is a structural metal. The system interfaces with a fluid handling system which provides the necessary chemistry supply and control for the system. The system is ambient controlled. Also, the system interfaces with an ambient controlled managed transfer module (MTM).

摘要翻译： 公开了一种用于晶片无电镀的干/干输出系统。 该系统包括用于晶片入口/出口和干燥操作的上部区域。 靠近头部设置在上部区域以执行干燥操作。 该系统还包括用于无电镀操作的下部区域。 下部区域包括通过流体上升流法实现晶片浸没的化学镀设备。 系统的上部和下部区域由双壁室围住，其中内壁是化学惰性塑料，外壁是结构金属。 系统与流体处理系统接口，为系统提供必要的化学物质供应和控制。 系统是环境控制的。 此外，系统与环境受控的托管传输模块（MTM）接口。

公开(公告)号：US07648616B1

公开(公告)日：2010-01-19

申请号：US11394777

申请日：2006-03-31

申请人： John M. Boyd ,  Fritz C. Redeker ,  Yezdi Dordi ,  Michael Ravkin ,  Robert Maraschin

发明人： John M. Boyd ,  Fritz C. Redeker ,  Yezdi Dordi ,  Michael Ravkin ,  Robert Maraschin

IPC分类号： C25F7/00 ,  C25B9/08

CPC分类号： C25F7/00 ,  H01L21/67011

摘要： A number of apertures are defined within a wall of a chamber defined to maintain an electrolyte solution. A cation exchange membrane is disposed within the chamber over the number of apertures. The electrolyte solution pressure within the chamber causes the cation exchange membrane to extend through the apertures beyond an outer surface of the chamber. A cathode is disposed within the chamber. The cathode is maintained at a negative bias voltage relative to a top surface of a wafer to be planarized. When the top surface of the wafer is brought into proximity of the cation exchange membrane extending through the apertures, and a deionized water layer is disposed between the top surface of the wafer and the cation exchange membrane, a cathode half-cell is established such that metal cations are liberated from the top surface of the wafer and plated on the cathode in the chamber.

摘要翻译： 在限定为维持电解质溶液的室的壁内限定了许多孔。 阳离子交换膜在腔室内设置多个孔。 室内的电解质溶液压力导致阳离子交换膜延伸穿过孔超过室的外表面。 阴极设置在室内。 阴极相对于要平坦化的晶片的顶表面保持在负偏压。 当晶片的顶表面靠近延伸穿过孔的阳离子交换膜，并且在晶片的顶表面和阳离子交换膜之间设置去离子水层时，建立阴极半电池，使得 金属阳离子从晶片的顶表面释放并镀在腔室中的阴极上。

公开(公告)号：US20080254225A1

公开(公告)日：2008-10-16

申请号：US11735987

申请日：2007-04-16

申请人： William Thie ,  John M. Boyd ,  Fritz C. Redeker ,  Yezdi Dordi ,  John Parks ,  Tiruchirapalli Arunagiri ,  Aleksander Owczarz ,  Todd Balisky ,  Clint Thomas ,  Jacob Wylie

发明人： William Thie ,  John M. Boyd ,  Fritz C. Redeker ,  Yezdi Dordi ,  John Parks ,  Tiruchirapalli Arunagiri ,  Aleksander Owczarz ,  Todd Balisky ,  Clint Thomas ,  Jacob Wylie

IPC分类号： B05D1/18 ,  B05C13/00

CPC分类号： H01L21/02104 ,  C23C18/1619 ,  H01L21/67005 ,  H01L21/6715

摘要： A semiconductor wafer electroless plating apparatus includes a platen and a fluid bowl. The platen has a top surface defined to support a wafer, and an outer surface extending downward from a periphery of the top surface to a lower surface of the platen. The fluid bowl has an inner volume defined by an interior surface so as to receive the platen, and wafer to be supported thereon, within the inner volume. A seal is disposed around the interior surface of the fluid bowl so as to form a liquid tight barrier when engaged between the interior surface of the fluid bowl and the outer surface of the platen. A number of fluid dispense nozzles are positioned to dispense electroplating solution within the fluid bowl above the seal so as to rise up and flow over the platen, thereby flowing over the wafer when present on the platen.

摘要翻译： 半导体晶片化学镀设备包括压板和流体碗。 压板具有限定为支撑晶片的顶表面和从顶表面的周边向下延伸到压板的下表面的外表面。 流体碗具有由内表面限定的内部容积，以便在内部容积内容纳压板和要支撑在其上的晶片。 密封件设置在流体碗的内表面周围，以便当接合在流体碗的内表面和压板的外表面之间时形成液密屏障。 多个流体分配喷嘴被定位成在密封件上方的流体碗内分配电镀溶液，以便在压板上升起并流动，从而当存在于压板上时流过晶片。

公开(公告)号：US20070048447A1

公开(公告)日：2007-03-01

申请号：US11461415

申请日：2006-07-31

申请人： Alan Lee ,  Andrew Bailey ,  William Thie ,  Yunsang Kim ,  Yezdi Dordi

发明人： Alan Lee ,  Andrew Bailey ,  William Thie ,  Yunsang Kim ,  Yezdi Dordi

IPC分类号： B05D3/10 ,  B05D1/32 ,  C23C16/00

CPC分类号： H05K3/184 ,  C23C18/1605 ,  C23C18/1642 ,  C23C18/1669 ,  C23C18/1879 ,  C23C18/1882 ,  C23C18/38 ,  C23C18/40 ,  H05K3/064 ,  H05K2203/0571 ,  H05K2203/072 ,  H05K2203/087

摘要： A method for forming copper on a substrate including inputting a copper source solution into a mixer, inputting a reducing solution into the mixer, mixing copper source solution and the reducing solution to form a plating solution having a pH of greater than about 6.5 and applying the plating solution to a substrate, the substrate including a catalytic layer wherein applying the plating solution to the substrate includes forming a catalytic layer, maintaining the catalytic layer in a controlled environment and forming copper on the catalytic layer. A system for forming copper structures is also disclosed.

摘要翻译： 一种在基板上形成铜的方法，包括将铜源溶液输入到混合器中，将还原溶液输入到混合器中，将铜源溶液和还原溶液混合以形成pH大于约6.5的电镀溶液， 电镀溶液到基板上，所述基板包括催化层，其中将所述电镀液施加到所述基板上包括形成催化剂层，将所述催化剂层保持在受控环境中并在所述催化层上形成铜。 还公开了一种用于形成铜结构的系统。

公开(公告)号：US20050016857A1

公开(公告)日：2005-01-27

申请号：US10627154

申请日：2003-07-24

申请人： Nicolay Kovarsky ,  Chunman Yu ,  Yezdi Dordi

发明人： Nicolay Kovarsky ,  Chunman Yu ,  Yezdi Dordi

IPC分类号： C25D21/14 ,  C25D21/18

CPC分类号： C25D21/14 ,  C25D21/18

摘要： Embodiments of the invention may further provide an electrochemical plating cell. The cell includes a fluid basin configured to contain an electrolyte plating solution, a fluid tank in fluid communication with the fluid basin and being configured to supply the electrolyte plating solution thereto, and an electrolyte solution stabilization device in fluid communication with the fluid tank. The stabilization device includes a fluid container having a fluid inlet and a fluid outlet, and an absorbent material positioned in the fluid container in a fluid path between the fluid inlet and the fluid outlet, wherein the absorbent material is configured to leach a solution additive into the electrolyte plating solution to maintain the solution additive within a processing window during an electrochemical plating process.

摘要翻译： 本发明的实施例还可以提供一种电化学电镀单元。 电池包括流体池，其构造成容纳电解液电镀溶液，与流体池流体连通的流体槽，并且被配置为向其提供电解镀液，以及与流体槽流体连通的电解液稳定装置。 稳定装置包括具有流体入口和流体出口的流体容器和位于流体容器内的流体入口和流体出口之间的流体路径中的吸收材料，其中吸收材料构造成将溶液添加剂浸出 在电化学电镀工艺期间将电解液电镀液维持在处理窗口内的溶液添加剂。

公开(公告)号：US09076844B2

公开(公告)日：2015-07-07

申请号：US12366235

申请日：2009-02-05

申请人： Nicolas Bright ,  David Hemker ,  Fritz C. Redeker ,  Yezdi Dordi

发明人： Nicolas Bright ,  David Hemker ,  Fritz C. Redeker ,  Yezdi Dordi

IPC分类号： H01L23/52 ,  H01L29/40 ,  H01L21/768

CPC分类号： H01L21/76822 ,  H01L21/76805 ,  H01L21/76807 ,  H01L21/76816 ,  H01L21/76843 ,  H01L21/76846 ,  H01L21/76849 ,  H01L2924/0002 ,  H01L2924/00

摘要： Back-End of Line (BEoL) interconnect structures, and methods for their manufacture, are provided. The structures are characterized by narrower conductive lines and reduced overall dielectric constant values. Conformal diffusion barrier layers, and selectively formed capping layers, are used to isolate the conductive lines and vias from surrounding dielectric layers in the interconnect structures. The methods of the invention employ techniques to narrow the openings in photoresist masks in order to define narrower vias. More narrow vias increase the amount of misalignment that can be tolerated between the vias and the conductive lines.

公开(公告)号：US08485120B2

公开(公告)日：2013-07-16

申请号：US11735987

申请日：2007-04-16

申请人： William Thie ,  John M. Boyd ,  Fritz C. Redeker ,  Yezdi Dordi ,  John Parks ,  Tiruchirapalli Arunagiri ,  Aleksander Owczarz ,  Todd Balisky ,  Clint Thomas ,  Jacob Wylie ,  Alan M. Schoepp

发明人： William Thie ,  John M. Boyd ,  Fritz C. Redeker ,  Yezdi Dordi ,  John Parks ,  Tiruchirapalli Arunagiri ,  Aleksander Owczarz ,  Todd Balisky ,  Clint Thomas ,  Jacob Wylie ,  Alan M. Schoepp

IPC分类号： B05C11/00 ,  B05D1/28

CPC分类号： H01L21/02104 ,  C23C18/1619 ,  H01L21/67005 ,  H01L21/6715

摘要： A semiconductor wafer electroless plating apparatus includes a platen and a fluid bowl. The platen has a top surface defined to support a wafer, and an outer surface extending downward from a periphery of the top surface to a lower surface of the platen. The fluid bowl has an inner volume defined by an interior surface so as to receive the platen, and wafer to be supported thereon, within the inner volume. A seal is disposed around the interior surface of the fluid bowl so as to form a liquid tight barrier when engaged between the interior surface of the fluid bowl and the outer surface of the platen. A number of fluid dispense nozzles are positioned to dispense electroplating solution within the fluid bowl above the seal so as to rise up and flow over the platen, thereby flowing over the wafer when present on the platen.

摘要翻译： 半导体晶片化学镀设备包括压板和流体碗。 压板具有限定为支撑晶片的顶表面和从顶表面的周边向下延伸到压板的下表面的外表面。 流体碗具有由内表面限定的内部容积，以便在内部容积内容纳压板和要支撑在其上的晶片。 密封件设置在流体碗的内表面周围，以便当接合在流体碗的内表面和压板的外表面之间时形成液密屏障。 多个流体分配喷嘴被定位成在密封件上方的流体碗内分配电镀溶液，以便在压板上升起并流动，从而当存在于压板上时流过晶片。

公开(公告)号：US08403727B1

公开(公告)日：2013-03-26

申请号：US10816417

申请日：2004-03-31

申请人： Fred C. Redeker ,  John M. Boyd ,  Yezdi Dordi ,  Sabir A. Majumder ,  Simon McClatchie

发明人： Fred C. Redeker ,  John M. Boyd ,  Yezdi Dordi ,  Sabir A. Majumder ,  Simon McClatchie

IPC分类号： B24B1/00 ,  B24B7/19 ,  B24B7/30

CPC分类号： H01L21/32115 ,  B24B37/042 ,  B24B37/107 ,  B24B37/11 ,  B24D7/06 ,  H01L21/68785

摘要： A method for producing a normalized surface on a substrate for a chemical mechanical planarization process is provided. The method initiates with grinding a surface of the substrate with a first surface associated with a first planarization length. The method includes planarizing the surface of the substrate with a second surface associated with a second planarization length. Here, the second planarization length being less than the first planarization length. A system for processing a semiconductor substrate is also provided.

摘要翻译： 提供了一种用于在化学机械平面化处理用基板上制造标准化表面的方法。 该方法通过用与第一平坦化长度相关联的第一表面研磨衬底的表面来启动。 该方法包括用与第二平坦化长度相关联的第二表面平坦化衬底的表面。 这里，第二平坦化长度小于第一平坦化长度。 还提供了一种用于处理半导体衬底的系统。