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100 条记录 (耗时 0.04 秒)

    Display device and method for manufacturing the same
    91.
    发明申请
    Display device and method for manufacturing the same 有权
    显示装置及其制造方法

    公开(公告)号：US20050142701A1

    公开(公告)日：2005-06-30

    申请号：US10891522

    申请日：2004-07-15

    申请人： Hironaru Yamaguchi ,  Kiyoshi Ogata ,  Takuo Tamura ,  Jun Gotoh ,  Masakazu Saito ,  Kazuo Takeda

    发明人： Hironaru Yamaguchi ,  Kiyoshi Ogata ,  Takuo Tamura ,  Jun Gotoh ,  Masakazu Saito ,  Kazuo Takeda

    IPC分类号： G02F1/1368 ,  G02F1/136 ,  G02F1/1362 ,  G09F9/30 ,  H01L21/20 ,  H01L21/268 ,  H01L21/336 ,  H01L21/77 ,  H01L21/84 ,  H01L27/12 ,  H01L29/04 ,  H01L29/786 ,  H01L21/00 ,  H01L27/15 ,  H01L29/26 ,  H01L31/12 ,  H01L33/00

    CPC分类号： H01L21/02686 ,  G02F1/13454 ,  H01L21/02595 ,  H01L21/2026 ,  H01L27/1285 ,  H01L29/04 ,  H01L29/66757 ,  H01L29/78675

    摘要： The average film thickness of an amorphous silicon film formed on a substrate is measured. Then, the amorphous silicon film is irradiated with a laser beam to form a polysilicon film. The grain size distribution of the polysilicon film is measured. An optimum value of energy density of laser beam irradiation is calculated on the basis of grain size values measured at two points A and B of the polysilicon film. Then, the average film thickness of a next amorphous silicon film is measured. A value of energy density of laser beam irradiation is calculated on the basis of the average film thickness of the next amorphous silicon film and the average film thickness of the previous amorphous silicon film. The value of energy density is fed back to a laser beam irradiation system. As described above, the energy density of laser beam irradiation to be applied on a silicon film formed on a substrate is controlled in accordance with the film thickness of the silicon film whenever the film thickness of the silicon film is measured. Accordingly, polysilicon uniform and large in grain size can be formed on the whole surface of a large-size substrate. As a result, polysilicon TFTs can be formed in a large area.

    摘要翻译： 测量在基板上形成的非晶硅膜的平均膜厚。 然后，用激光束照射非晶硅膜以形成多晶硅膜。 测量多晶硅膜的晶粒尺寸分布。 基于在多晶硅膜的两点A和B测量的晶粒尺寸值来计算激光束照射的能量密度的最佳值。 然后，测定下一非晶硅膜的平均膜厚。 基于下一非晶硅膜的平均膜厚和先前的非晶硅膜的平均膜厚计算激光束照射的能量密度值。 能量密度的值被反馈到激光束照射系统。 如上所述，每当测量硅膜的膜厚时，根据硅膜的膜厚度来控制施加在形成在基板上的硅膜上的激光束照射的能量密度。 因此，可以在大尺寸基板的整个表面上形成均匀且粒径大的多晶硅。 结果，可以在大面积上形成多晶硅TFT。

    Metal halide lamp having a long lifespan
    93.
    发明授权
    Metal halide lamp having a long lifespan 失效
    金属卤化物灯寿命长

    公开(公告)号：US06815893B2

    公开(公告)日：2004-11-09

    申请号：US10282468

    申请日：2002-10-29

    申请人： Shunsuke Kakisaka ,  Kazuo Takeda ,  Takashi Maniwa ,  Yoshiharu Nishiura

    发明人： Shunsuke Kakisaka ,  Kazuo Takeda ,  Takashi Maniwa ,  Yoshiharu Nishiura

    IPC分类号： H01J6118

    CPC分类号： H01J61/30 ,  H01J61/827

    摘要： The present invention provides a metal halide lamp having a ceramic arc tube vessel that includes a discharge arc tube member and thin tube members, the discharge arc tube member including taper parts and a main tube part in the middle in a longitudinal direction, the taper parts and the main tube part having a larger outside diameter than an outside diameter of ends of the discharge arc tube in a longitudinal direction, and the thin tube members each being fit to the respective ends of the discharge arc tube, where a minimum curvature radius R is set to be 0.3 mm or more at each transitional area of an external surface between each taper part and a corresponding end of the discharge arc tube.

    摘要翻译： 本发明提供一种具有陶瓷电弧管容器的金属卤化物灯，其包括放电电弧管部件和细管部件，所述放电电弧管部件包括锥形部分和在纵向方向上的中间的主管部分，所述锥形部分 并且主管部分具有比沿着放电电弧管的纵向方向的端部的外径更大的外径，并且每个细管部件均配合到放电电弧管的各个端部，其中最小曲率半径R 在每个锥形部分和放电电弧管的相应端之间的外表面的每个过渡区域处被设定为0.3mm以上。

    Control method of plural compressors and compressor system
    95.
    发明授权
    Control method of plural compressors and compressor system 有权
    多台压缩机和压缩机系统的控制方法

    公开(公告)号：US06773224B2

    公开(公告)日：2004-08-10

    申请号：US10101312

    申请日：2002-03-20

    申请人： Toshio Itou ,  Kazuo Takeda

    发明人： Toshio Itou ,  Kazuo Takeda

    IPC分类号： F01D1704

    CPC分类号： F04D27/0207 ,  F01D17/04 ,  F01D17/08

    摘要： In a compressor system, in which plural numbers of compressors are connected in parallel with, wherein flow rate of all the compressor main bodies driven under load operating condition is decreased down by closing each of the inlet guide vanes thereof, when a load of the compressor goes down, and then the compressor rushing into surge at the earliest is brought into unload operating condition. Thereafter, the flow rates of the compressors other than that brought into the un-load operating conditions are increased up, thereby conducting the operation of the compressor depending upon the load.

    摘要翻译： 在压缩机系统中，多台压缩机并联连接，其中在负载运行状态下驱动的所有压缩机主体的流量通过关闭其每个入口导叶而减小，当压缩机的负载 然后将压缩机最早冲入浪涌处于卸载运行状态。 此后，除了进入负载运行条件之外的压缩机的流量增加，从而根据负载进行压缩机的操作。

    Defect inspection method and apparatus for silicon wafer
    97.
    发明授权
    Defect inspection method and apparatus for silicon wafer 失效
    硅片缺陷检查方法及装置

    公开(公告)号：US06683683B2

    公开(公告)日：2004-01-27

    申请号：US10084059

    申请日：2002-02-28

    申请人： Koji Tomita ,  Muneo Maeshima ,  Shigeru Matsui ,  Yoshitaka Kodama ,  Hitoshi Komuro ,  Kazuo Takeda

    发明人： Koji Tomita ,  Muneo Maeshima ,  Shigeru Matsui ,  Yoshitaka Kodama ,  Hitoshi Komuro ,  Kazuo Takeda

    IPC分类号： G01N2188

    CPC分类号： G01N21/9505 ,  G01N21/9501

    摘要： A defect inspection apparatus for detecting defects existing on a surface of a semiconductor sample and/or inside the sample based on light information from the sample obtained by irradiating a light beam onto the sample is provided, which comprises a detecting means for detecting positions in the depth direction where the defects exist and distribution of the defects based on the light information; a setting means for setting a position in the depth direction where defects exist; and a means for displaying the distribution of the defects obtained by the detecting means, the displaying means displaying the distribution of the defects corresponding to the position in the depth direction set by the setting means.

    摘要翻译： 提供了一种用于根据从将样本照射光束获得的样本的光信息检测存在于半导体样品表面和/或样品内部的缺陷的缺陷检查装置，其包括检测装置， 存在缺陷的深度方向和基于光信息的缺陷分布; 用于设置存在缺陷的深度方向上的位置的设定装置; 以及用于显示由检测装置获得的缺陷的分布的装置，显示装置显示与由设置装置设置的深度方向上的位置相对应的缺陷的分布。

    High pressure discharge lamp
    98.
    发明授权
    High pressure discharge lamp 有权
    高压放电灯

    公开(公告)号：US06342764B1

    公开(公告)日：2002-01-29

    申请号：US09575940

    申请日：2000-05-23

    申请人： Yoshiharu Nishiura ,  Takashi Yamamoto ,  Kazuo Takeda ,  Shiki Nakayama ,  Hiroshi Nohara

    发明人： Yoshiharu Nishiura ,  Takashi Yamamoto ,  Kazuo Takeda ,  Shiki Nakayama ,  Hiroshi Nohara

    IPC分类号： H01J1704

    CPC分类号： H01J61/822 ,  H01J61/0732

    摘要： A discharge tube is provided inside an outer tube. At least a pair of electrodes is arranged inside the discharge tube, and at least mercury is sealed into the discharge tube. The electrode includes an electrode pin and a metal pipe that surrounds the electrode pin. Because a contact area of the electrode pin and the inner surface of the metal pipe is sufficiently maintained in a stable manner, a tip temperature of the electrode pin can be lowered sufficiently without a variation. As a result, it is possible to obtain a high pressure discharge lamp that has excellent lifetime characteristics and can considerably reduce the variation of the lifetime characteristics between lamps.

    摘要翻译： 放电管设置在外管的内部。 至少一对电极布置在放电管内部，并且至少汞被密封到放电管中。 电极包括电极针和围绕电极针的金属管。 由于电极销的接触区域和金属管的内表面被稳定地充分地保持，所以可以充分降低电极销的端部温度而不变化。 结果，可以获得具有优异的寿命特性的高压放电灯，并且可以显着地减少灯之间的寿命特性的变化。

    Defect assessing apparatus and method, and semiconductor manufacturing method
    99.
    发明授权
    Defect assessing apparatus and method, and semiconductor manufacturing method 有权
    缺陷评估装置和方法以及半导体制造方法

    公开(公告)号：US06226079B1

    公开(公告)日：2001-05-01

    申请号：US09161393

    申请日：1998-09-29

    申请人： Kazuo Takeda ,  Makoto Ohkura ,  Seiichi Isomae ,  Kyoko Minowa ,  Muneo Maeshima ,  Shigeru Matsui ,  Yasushi Matsuda ,  Hirofumi Shimizu

    发明人： Kazuo Takeda ,  Makoto Ohkura ,  Seiichi Isomae ,  Kyoko Minowa ,  Muneo Maeshima ,  Shigeru Matsui ,  Yasushi Matsuda ,  Hirofumi Shimizu

    IPC分类号： G01N2100

    CPC分类号： G01N21/9501 ,  G01N21/47

    摘要： A defect assessing apparatus and method and a semiconductor manufacturing method for revealing the relationship between the size and depth of defects is disclosed. A detecting optical system is provided for detecting the intensity of scattered light from a defect generated by the shorter wavelength one of the light rays of at least two different wavelengths emitted from irradiating optical systems and that of scattered light from the defect generated by the longer wavelength one of same. A calculating means is provided for determining, from the scattered light intensity derived from the shorter wavelength ray and that derived form the longer wavelength ray, both detected by the detecting optical system, a value corresponding to the defect size and another value corresponding to the defect depth. A display means is provided for displaying a distribution revealing the relationship between defect size and defect depth on the basis of the value corresponding to the defect size and the value corresponding to the defect depth, both determined by the calculating means.

    摘要翻译： 公开了一种用于揭示缺陷的尺寸和深度之间的关系的缺陷评估装置和方法以及半导体制造方法。 提供了一种检测光学系统，用于检测由照射光学系统发射的至少两种不同波长的较短波长的一个光线产生的缺陷的散射光的强度，以及来自由较长波长产生的缺陷的散射光 一个是相同的 提供了一种计算装置，用于根据由检测光学系统检测的来自较短波长的衍射的散射光强度和由较长波长的光导出的值，确定对应于缺陷尺寸的值和对应于缺陷的另一个值 深度。 提供显示装置，用于根据由计算装置确定的缺陷尺寸和对应于缺陷深度的值，显示出显示缺陷尺寸和缺陷深度之间的关系的分布。