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    Compensating for variations in selector threshold voltages
    92.
    发明授权
    Compensating for variations in selector threshold voltages 有权

    公开(公告)号：US09966127B2

    公开(公告)日：2018-05-08

    申请号：US15291711

    申请日：2016-10-12

    Applicant: Micron Technology, Inc.

    Inventor： Ferdinando Bedeschi ,  Umberto Di Vincenzo

    IPC: G11C11/22

    CPC classification number: G11C11/2259 ,  G11C11/221 ,  G11C11/2273 ,  G11C11/2275 ,  G11C11/2277 ,  G11C11/2293

    Abstract: Methods, systems, and devices are described for operating a memory array. A first voltage may be applied to a memory cell to activate a selection component of the memory cell prior to applying a second voltage to the memory cell. The second voltage may be applied to facilitate a sensing operation once the selection component is activated. The first voltage may be applied during a first portion of an access operation and may be used in determining a threshold voltage of the selection component. The subsequently applied second voltage may be applied during a second portion of the access operation and may have a magnitude associated with a preferred voltage for accessing a ferroelectric capacitor of the memory cell. In some cases, the second voltage has a greater rate of increase over time (e.g., a greater “ramp”) than the first voltage.

    MEMORY CELL IMPRINT AVOIDANCE
    93.
    发明申请
    MEMORY CELL IMPRINT AVOIDANCE 审中-公开

    公开(公告)号：US20170365323A1

    公开(公告)日：2017-12-21

    申请号：US15645106

    申请日：2017-07-10

    Applicant: Micron Technology, Inc.

    Inventor： Alessandro Calderoni ,  Durai Vishak Nirmal Ramaswamy ,  Kirk Prall ,  Ferdinando Bedeschi

    IPC: G11C11/22 ,  G06F11/10 ,  G11C29/52

    CPC classification number: G11C11/2275 ,  G06F11/1048 ,  G06F11/1068 ,  G11C11/221 ,  G11C11/2273 ,  G11C29/52

    Abstract: Methods, systems, and devices for operating a ferroelectric memory cell or cells are described. A cell may be written with a value that is intended to convey a different logic state than may typically be associated with the value. For example, a cell that has stored a charge associated with one logic state for a time period may be re-written to store a different charge, and the re-written cell may still be read to have the originally stored logic state. An indicator may be stored in a latch to indicate whether the logic state currently stored by the cell is the intended logic state of the cell. A cell may, for example, be re-written with an opposite value periodically, based on the occurrence of an event, or based on a determination that the cell has stored one value (or charge) for a certain time period.

    Apparatuses and methods for sensing using an integration component
    99.
    发明授权
    Apparatuses and methods for sensing using an integration component 有权
    使用集成组件进行感测的装置和方法

    公开(公告)号：US09552875B2

    公开(公告)日：2017-01-24

    申请号：US15059541

    申请日：2016-03-03

    Applicant: Micron Technology, Inc.

    Inventor： Ferdinando Bedeschi

    IPC: G11C11/00 ,  G11C13/00 ,  G11C11/16

    CPC classification number: G11C13/004 ,  G11C11/00 ,  G11C11/1677 ,  G11C13/0064 ,  G11C2013/0066

    Abstract: The present disclosure includes apparatuses and methods for sensing a resistance variable memory cell. A number of embodiments include circuitry to provide a programming signal to a memory cell in the array, the programming signal associated with programming the memory cell to a particular data state; and determine, via an integration component, if a data state of the memory cell changes to a different data state responsive to the programming signal being provided.

    Abstract translation: 本公开包括用于感测电阻变量存储单元的装置和方法。 许多实施例包括向阵列中的存储器单元提供编程信号的电路，与将存储器单元编程为特定数据状态相关联的编程信号; 并且通过积分分量确定响应于所提供的编程信号，存储器单元的数据状态是否变为不同的数据状态。

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