公开(公告)号：US09571056B2

公开(公告)日：2017-02-14

申请号：US14554746

申请日：2014-11-26

Applicant: RF Micro Devices, Inc.

Inventor： Baker Scott ,  George Maxim ,  Dirk Robert Walter Leipold

IPC: H03G3/30 ,  H03F1/52 ,  H03F1/02 ,  H03F3/19 ,  H04B1/04 ,  H03F1/32 ,  H03F3/68 ,  H03F1/22 ,  H03F1/56 ,  H03F3/45 ,  H03F3/193

CPC classification number: H03G3/3036 ,  H03F1/0211 ,  H03F1/0272 ,  H03F1/223 ,  H03F1/32 ,  H03F1/523 ,  H03F1/565 ,  H03F3/19 ,  H03F3/193 ,  H03F3/24 ,  H03F3/45179 ,  H03F3/45394 ,  H03F3/68 ,  H03F2200/324 ,  H03F2200/387 ,  H03F2200/451 ,  H03F2200/471 ,  H03F2201/3236 ,  H03G3/3042 ,  H04B1/0475 ,  H04B2001/0408 ,  H04B2001/0416 ,  H04B2001/0425

Abstract: RF PA circuitry includes an amplifier stage, gain compensation circuitry, and an adder. The amplifier stage is configured to receive and amplify an RF input signal to provide an RF output signal. The gain compensation circuitry is coupled in parallel with the amplifier stage and configured to receive the RF input signal and provide a gain compensation signal, wherein the gain compensation signal is configured to linearize at least a portion of the gain response of the amplifier stage or the RF PA circuitry in general. The adder is coupled between an output of the amplifier stage and the gain compensation stage and is configured to receive and add the RF output signal and the gain compensation signal to provide a linearized RF output signal.

Abstract translation: RF PA电路包括放大器级，增益补偿电路和加法器。 放大器级被配置为接收和放大RF输入信号以提供RF输出信号。 所述增益补偿电路与所述放大器级并联并且被配置为接收所述RF输入信号并提供增益补偿信号，其中所述增益补偿信号被配置为线性化放大器级的增益响应的至少一部分或 RF PA电路一般。 加法器耦合在放大器级的输出端和增益补偿级之间，并且被配置为接收和添加RF输出信号和增益补偿信号以提供线性化的RF输出信号。

公开(公告)号：US09559644B2

公开(公告)日：2017-01-31

申请号：US14931448

申请日：2015-11-03

Applicant: RF Micro Devices, Inc.

Inventor： George Maxim ,  Dirk Robert Walter Leipold ,  Baker Scott ,  Ralph Christopher Nieri

IPC: H03F3/04 ,  H03F3/193 ,  H03F1/26 ,  H04B1/10 ,  H04B7/08 ,  H04W72/04 ,  H03F1/02 ,  H03F1/22

CPC classification number: H03F3/193 ,  H03F1/0261 ,  H03F1/223 ,  H03F1/26 ,  H03F2200/294 ,  H03F2200/451 ,  H03F2200/492 ,  H04B1/1036 ,  H04B7/08 ,  H04B2001/1063 ,  H04W72/04

Abstract: Circuitry includes a floating-body main field-effect transistor (FET) device, a body-contacted cascode FET device, and biasing circuitry coupled to the floating-body main FET device and the body-contacted cascode FET device. The floating-body main FET device includes a gate contact, a drain contact, and a source contact. The body-contacted cascode FET device includes a gate contact, a drain contact coupled to a supply voltage, and a source contact coupled to the drain contact of the floating-body main FET device and to a body region of the body-contacted cascode FET device. The biasing circuitry is coupled to the gate contact of the floating-body main FET device and the gate contact of the body-contacted cascode FET device and configured to provide biasing signals to the floating-body main FET device and the body-contacted cascode FET device such that a majority of the supply voltage is provided across the body-contacted cascode FET device.

Abstract translation: 电路包括浮体主场效应晶体管（FET）器件，体接触共源共栅FET器件和耦合到浮体主FET器件和体接触共源共栅FET器件的偏置电路。 浮体主FET器件包括栅极接触，漏极接触和源极接触。 身体接触的共源共栅型FET器件包括栅极接触，耦合到电源电压的漏极接触以及耦合到浮体主FET器件的漏极接触和与身体接触的共源共栅FET的体区的源极接触 设备。 偏置电路耦合到浮体主FET器件的栅极接触和体接触共源共栅FET器件的栅极接触，并且被配置为向浮体主FET器件和体接触的共源共栅FET提供偏置信号 器件，使得大部分电源电压被提供在身体接触的共源共栅型FET器件上。

公开(公告)号：US09530709B2

公开(公告)日：2016-12-27

申请号：US14885243

申请日：2015-10-16

Applicant: RF Micro Devices, Inc.

Inventor： Dirk Robert Walter Leipold ,  George Maxim ,  Julio C. Costa ,  Baker Scott

IPC: H01L23/31 ,  H01L21/306 ,  H01L21/304 ,  H01L21/02 ,  H01L21/683 ,  H01L23/29 ,  H01L23/373 ,  H01L23/00 ,  H05K1/02 ,  H05K1/18 ,  H01Q1/50

CPC classification number: H01L23/315 ,  H01L21/02266 ,  H01L21/02282 ,  H01L21/304 ,  H01L21/30604 ,  H01L21/565 ,  H01L21/6835 ,  H01L23/20 ,  H01L23/291 ,  H01L23/293 ,  H01L23/3121 ,  H01L23/3135 ,  H01L23/36 ,  H01L23/367 ,  H01L23/3731 ,  H01L23/3737 ,  H01L23/5223 ,  H01L23/5227 ,  H01L23/5228 ,  H01L23/562 ,  H01L24/17 ,  H01L28/10 ,  H01L28/20 ,  H01L28/40 ,  H01L2221/68327 ,  H01L2221/6834 ,  H01L2221/68381 ,  H01L2224/131 ,  H01L2224/13147 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2224/73204 ,  H01L2224/92125 ,  H01L2924/0002 ,  H01L2924/19011 ,  H01L2924/19041 ,  H01L2924/19042 ,  H01L2924/19043 ,  H01Q1/50 ,  H05K1/0203 ,  H05K1/181 ,  H01L2924/00 ,  H01L2924/014 ,  H01L2924/00014

Abstract: A printed circuit module having a protective layer in place of a low-resistivity handle layer and methods for manufacturing the same are disclosed. The printed circuit module includes a printed circuit substrate with a thinned die attached to the printed circuit substrate. The thinned die includes at least one device layer over the printed circuit substrate and at least one deep well within the at least one device layer. A protective layer is disposed over the at least one deep well, wherein the protective layer has a thermal conductivity greater than 2 watts per meter Kelvin (W/mK) and an electrical resistivity of greater than 103 Ohm-cm.

Abstract translation: 公开了一种具有代替低电阻手柄层的保护层的印刷电路模块及其制造方法。 印刷电路模块包括具有附接到印刷电路基板的薄化管芯的印刷电路基板。 薄化的管芯包括印刷电路衬底上的至少一个器件层和至少一个器件层内的至少一个深阱。 保护层设置在至少一个深孔的上方，其中保护层具有大于2瓦/米开尔文（W / mK）的热导率和大于103欧姆 - 厘米的电阻率。

公开(公告)号：US09455680B2

公开(公告)日：2016-09-27

申请号：US14298829

申请日：2014-06-06

Applicant: RF Micro Devices, Inc.

Inventor： Dirk Robert Walter Leipold ,  George Maxim ,  Baker Scott

IPC: H03H7/09 ,  H03H7/46 ,  H03H7/01 ,  H03F3/193 ,  H04B1/10 ,  H03F1/56 ,  H03F3/24 ,  H03F3/68 ,  H03F3/72 ,  H04B1/18

CPC classification number: H03H7/465 ,  H03F1/565 ,  H03F3/193 ,  H03F3/245 ,  H03F3/68 ,  H03F3/72 ,  H03F2200/111 ,  H03F2200/267 ,  H03F2200/451 ,  H03F2203/7209 ,  H03H7/0115 ,  H03H7/0153 ,  H03H7/09 ,  H03H7/1775 ,  H03H7/46 ,  H03H7/463 ,  H03H2210/012 ,  H03H2210/025 ,  H03H2210/04 ,  H04B1/1027 ,  H04B1/18

Abstract: RF filter structures are disclosed that may have multiple filter paths, which are provided by weakly coupled resonators. The filter paths may be interconnected so that additional filter paths may be realized between input and output terminals of the RF filter structures. In this manner, the weakly coupled resonators from the filter paths may be arranged in a matrix. In one embodiment, an RF filter structure includes a first filter path and a second filter path. The first filter path includes (at least) a first pair of weakly coupled resonators while a second filter path that includes (at least) a second pair of weakly coupled resonators. To interconnect the first filter path and the second filter path, a cross-coupling capacitive structure is electrically connected between the first filter path and the second filter path. As such, an additional filtering path may be realized through the interconnection provided by the cross-coupling capacitive structure.

Abstract translation: 公开了可以具有由弱耦合谐振器提供的多个滤波器路径的RF滤波器结构。 滤波器路径可以互连，使得可以在RF滤波器结构的输入和输出端之间实现附加的滤波器路径。 以这种方式，来自滤波器路径的弱耦合谐振器可以被布置成矩阵。 在一个实施例中，RF滤波器结构包括第一滤波器路径和第二滤波器路径。 第一滤波器路径包括（至少）第一对弱耦合谐振器，而第二滤波器路径包括（至少）第二对弱耦合谐振器对。 为了互连第一滤波器路径和第二滤波器路径，交叉耦合电容结构电连接在第一滤波器路径和第二滤波器路径之间。 因此，可以通过由交叉耦合电容结构提供的互连来实现附加的滤波路径。

公开(公告)号：US09419578B2

公开(公告)日：2016-08-16

申请号：US14298830

申请日：2014-06-06

Applicant: RF Micro Devices, Inc.

Inventor： Dirk Robert Walter Leipold ,  George Maxim ,  Baker Scott

IPC: H03H7/09 ,  H03H7/42 ,  H03H7/46 ,  H03H7/01 ,  H03F3/193 ,  H04B1/10 ,  H03F1/56 ,  H03F3/24 ,  H03F3/68 ,  H03F3/72 ,  H04B1/18

CPC classification number: H03H7/465 ,  H03F1/565 ,  H03F3/193 ,  H03F3/245 ,  H03F3/68 ,  H03F3/72 ,  H03F2200/111 ,  H03F2200/267 ,  H03F2200/451 ,  H03F2203/7209 ,  H03H7/0115 ,  H03H7/0153 ,  H03H7/09 ,  H03H7/1775 ,  H03H7/46 ,  H03H7/463 ,  H03H2210/012 ,  H03H2210/025 ,  H03H2210/04 ,  H04B1/1027 ,  H04B1/18

Abstract: This disclosure relates generally to radio frequency (RF) filter structures. In one embodiment, an RF filter structure includes a first resonator and a second resonator. The second resonator is operably associated with the first resonator such that an energy transfer factor between the first resonator and the second resonator is less than 10%. The first resonator includes a first inductor and a first capacitive structure electrically connected to the first inductor, while the second resonator has a second inductor and a second capacitive structure electrically connected to the second inductor. A displacement between the first inductor and the second inductor is less than or equal to half a maximum lateral width of the second inductor. To set an electric coupling coefficient, a first cross-coupling capacitive structure is electrically connected between the first resonator and the second resonator.

Abstract translation: 本公开一般涉及射频（RF）滤波器结构。 在一个实施例中，RF滤波器结构包括第一谐振器和第二谐振器。 第二谐振器可操作地与第一谐振器相关联，使得第一谐振器和第二谐振器之间的能量传递因子小于10％。 第一谐振器包括电连接到第一电感器的第一电感器和第一电容结构，而第二谐振器具有电连接到第二电感器的第二电感器和第二电容结构。 第一电感器和第二电感器之间的位移小于或等于第二电感器的最大横向宽度的一半。 为了设置电耦合系数，第一交叉耦合电容结构电连接在第一谐振器和第二谐振器之间。

公开(公告)号：US20160126607A1

公开(公告)日：2016-05-05

申请号：US14930937

申请日：2015-11-03

Applicant: RF Micro Devices, Inc.

Inventor： Dirk Robert Walter Leipold ,  George Maxim ,  Marcus Granger-Jones ,  Baker Scott

IPC: H01P9/00

CPC classification number: H01P1/20381 ,  H01P5/028 ,  H01P9/006 ,  H05K1/00 ,  H05K1/0219 ,  H05K1/0239 ,  H05K1/0298 ,  H05K3/4611 ,  H05K2201/097

Abstract: The present disclosure relates to a tunable slow-wave transmission line. The tunable slow-wave transmission line is formed in a multi-layer substrate and includes an undulating signal path. The undulating signal path includes at least two loop structures, wherein each loop structure includes at least two via structures connected by at least one intra-loop trace. The undulating signal path further includes at least one inter-loop trace connecting the at least two loop structures. The tunable slow-wave transmission line includes a first ground structure disposed along the undulating signal path. Further, the tunable slow-wave transmission line includes one or more circuits that may alter a signal transmitted in the tunable slow-wave transmission line so as to tune a frequency of the signal.

Abstract translation: 本公开涉及可调节慢波传输线。 可调节慢波传输线形成在多层基板中，并且包括起伏的信号路径。 起伏信号路径包括至少两个环路结构，其中每个环路结构包括通过至少一个环路内线路连接的至少两个通孔结构。 起伏信号路径还包括连接至少两个环路结构的至少一个环路间迹线。 可调谐慢波传输线包括沿着起伏信号路径设置的第一接地结构。 此外，可调谐慢波传输线包括一个或多个电路，其可以改变在可调节慢波传输线中传输的信号，以调谐信号的频率。

公开(公告)号：US20160126196A1

公开(公告)日：2016-05-05

申请号：US14885202

申请日：2015-10-16

Applicant: RF Micro Devices, Inc.

Inventor： Dirk Robert Walter Leipold ,  Julio C. Costa ,  Baker Scott ,  George Maxim

IPC: H01L23/00 ,  H05K1/18 ,  H01L23/373 ,  H05K1/02 ,  H01L23/29 ,  H01L23/31

CPC classification number: H01L23/315 ,  H01L21/02266 ,  H01L21/02282 ,  H01L21/304 ,  H01L21/30604 ,  H01L21/565 ,  H01L21/6835 ,  H01L23/20 ,  H01L23/291 ,  H01L23/293 ,  H01L23/3121 ,  H01L23/3135 ,  H01L23/36 ,  H01L23/367 ,  H01L23/3731 ,  H01L23/3737 ,  H01L23/5223 ,  H01L23/5227 ,  H01L23/5228 ,  H01L23/562 ,  H01L24/17 ,  H01L28/10 ,  H01L28/20 ,  H01L28/40 ,  H01L2221/68327 ,  H01L2221/6834 ,  H01L2221/68381 ,  H01L2224/131 ,  H01L2224/13147 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2224/73204 ,  H01L2224/92125 ,  H01L2924/0002 ,  H01L2924/19011 ,  H01L2924/19041 ,  H01L2924/19042 ,  H01L2924/19043 ,  H01Q1/50 ,  H05K1/0203 ,  H05K1/181 ,  H01L2924/00 ,  H01L2924/014 ,  H01L2924/00014

Abstract: A printed circuit module having a protective layer in place of a low-resistivity handle layer and methods for manufacturing the same are disclosed. The printed circuit module includes a printed circuit substrate with a thinned die attached to the printed circuit substrate. The thinned die includes at least one device layer over the printed circuit substrate and at least one deep well within the at least one device layer. A protective layer is disposed over the at least one deep well, wherein the protective layer has a thermal conductivity greater than 2 watts per meter Kelvin (W/mK) and an electrical resistivity of greater than 106 Ohm-cm.

Abstract translation: 公开了一种具有代替低电阻手柄层的保护层的印刷电路模块及其制造方法。 印刷电路模块包括具有附接到印刷电路基板的薄化管芯的印刷电路基板。 薄化的管芯包括印刷电路衬底上的至少一个器件层和至少一个器件层内的至少一个深阱。 保护层设置在至少一个深孔的上方，其中保护层具有大于2瓦/米开尔文（W / mK）的热导率和大于106欧姆 - 厘米的电阻率。

公开(公告)号：US20160126111A1

公开(公告)日：2016-05-05

申请号：US14885243

申请日：2015-10-16

Applicant: RF Micro Devices, Inc.

Inventor： Dirk Robert Walter Leipold ,  George Maxim ,  Julio C. Costa ,  Baker Scott

IPC: H01L21/56 ,  H01L23/20 ,  H01L21/02 ,  H01L21/683 ,  H01L21/306 ,  H01L21/304

CPC classification number: H01L23/315 ,  H01L21/02266 ,  H01L21/02282 ,  H01L21/304 ,  H01L21/30604 ,  H01L21/565 ,  H01L21/6835 ,  H01L23/20 ,  H01L23/291 ,  H01L23/293 ,  H01L23/3121 ,  H01L23/3135 ,  H01L23/36 ,  H01L23/367 ,  H01L23/3731 ,  H01L23/3737 ,  H01L23/5223 ,  H01L23/5227 ,  H01L23/5228 ,  H01L23/562 ,  H01L24/17 ,  H01L28/10 ,  H01L28/20 ,  H01L28/40 ,  H01L2221/68327 ,  H01L2221/6834 ,  H01L2221/68381 ,  H01L2224/131 ,  H01L2224/13147 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2224/73204 ,  H01L2224/92125 ,  H01L2924/0002 ,  H01L2924/19011 ,  H01L2924/19041 ,  H01L2924/19042 ,  H01L2924/19043 ,  H01Q1/50 ,  H05K1/0203 ,  H05K1/181 ,  H01L2924/00 ,  H01L2924/014 ,  H01L2924/00014

Abstract: A printed circuit module having a protective layer in place of a low-resistivity handle layer and methods for manufacturing the same are disclosed. The printed circuit module includes a printed circuit substrate with a thinned die attached to the printed circuit substrate. The thinned die includes at least one device layer over the printed circuit substrate and at least one deep well within the at least one device layer. A protective layer is disposed over the at least one deep well, wherein the protective layer has a thermal conductivity greater than 2 watts per meter Kelvin (W/mK) and an electrical resistivity of greater than 103 Ohm-cm.

Abstract translation: 公开了一种具有代替低电阻手柄层的保护层的印刷电路模块及其制造方法。 印刷电路模块包括具有附接到印刷电路基板的薄化管芯的印刷电路基板。 薄化的管芯包括印刷电路衬底上的至少一个器件层和至少一个器件层内的至少一个深阱。 保护层设置在至少一个深孔的上方，其中保护层具有大于2瓦/米开尔文（W / mK）的热导率和大于103欧姆 - 厘米的电阻率。

公开(公告)号：US20150171815A1

公开(公告)日：2015-06-18

申请号：US14568495

申请日：2014-12-12

Applicant: RF Micro Devices, Inc.

Inventor： George Maxim ,  Baker Scott ,  Dirk Robert Walter Leipold

IPC: H03G3/30

CPC classification number: H03G3/3042 ,  H03F1/26 ,  H03F1/3247 ,  H03F1/3282 ,  H03F3/193

Abstract: RF PA circuitry includes an RF signal path, an adjustable component, a distortion compensation feedback loop including distortion compensation circuitry, RF noise filtering circuitry, and baseband noise filtering circuitry. The adjustable component is located in the RF signal path. The distortion compensation feedback loop is coupled in parallel with at least a portion of the RF signal path, and includes the distortion compensation circuitry. Further, the distortion compensation circuitry is configured to adjust one or more parameters of the adjustable component via a component adjustment signal based on a measurement of a signal at an output of the RF signal path. The RF noise filtering circuitry is coupled in the RF signal path and configured to attenuate noise therein. The baseband noise filtering circuitry is coupled between the distortion compensation circuitry and the adjustable component and configured to attenuate noise in the component adjustment signal.

Abstract translation: RF PA电路包括RF信号路径，可调组件，包括失真补偿电路，RF噪声滤波电路和基带噪声滤波电路的失真补偿反馈回路。 可调组件位于RF信号路径中。 失真补偿反馈回路与RF信号路径的至少一部分并联耦合，并且包括失真补偿电路。 此外，失真补偿电路被配置为基于在RF信号路径的输出处的信号的测量，经由组件调整信号来调整可调组件的一个或多个参数。 RF噪声滤波电路被耦合在RF信号路径中并被配置为衰减其中的噪声。 基带噪声滤波电路耦合在失真补偿电路和可调组件之间，并被配置为衰减元件调整信号中的噪声。

公开(公告)号：US20150094008A1

公开(公告)日：2015-04-02

申请号：US14555053

申请日：2014-11-26

Applicant: RF Micro Devices, Inc.

Inventor： George Maxim ,  Baker Scott ,  Dirk Robert Walter Leipold

IPC: H03F3/24 ,  H03F3/19 ,  H04B1/16

CPC classification number: H03F3/245 ,  H01F17/0013 ,  H03F1/56 ,  H03F3/195 ,  H03F3/68 ,  H03F2200/222 ,  H03F2200/387 ,  H03F2200/451 ,  H03F2200/546 ,  H03H7/0115 ,  H03H7/0161 ,  H03H7/09 ,  H04B1/0458 ,  H04B1/18 ,  H04B1/48

Abstract: RF communications circuitry, which includes a first group of RF power amplifier circuits and a first weakly coupled RF network, is disclosed. The first group of RF power amplifier circuits includes a first RF power amplifier circuit, which receives and amplifies a first RF amplifier input signal to provide a first RF amplifier output signal, and a second RF power amplifier circuit, which receives and amplifies a second RF amplifier input signal to provide a second RF amplifier output signal. The first weakly coupled RF network includes a first pair of weakly coupled RF resonators coupled to the first RF power amplifier circuit and a second pair of weakly coupled RF resonators coupled to the second RF power amplifier circuit.

Abstract translation: 公开了RF通信电路，其包括第一组RF功率放大器电路和第一弱耦合RF网络。 第一组RF功率放大器电路包括第一RF功率放大器电路，其接收和放大第一RF放大器输入信号以提供第一RF放大器输出信号，以及第二RF功率放大器电路，其接收和放大第二RF 放大器输入信号提供第二个RF放大器输出信号。 第一弱耦合RF网络包括耦合到第一RF功率放大器电路的第一对弱耦合RF谐振器和耦合到第二RF功率放大器电路的第二对弱耦合RF谐振器。