公开(公告)号：US20080026497A1

公开(公告)日：2008-01-31

申请号：US11826085

申请日：2007-07-12

申请人： Akira Furuya

发明人： Akira Furuya

IPC分类号： H01L21/00

CPC分类号： H01L33/0095 ,  H01L33/20 ,  H01L33/22

摘要： A manufacturing method of a light-emitting element includes emitting a laser light to a division region for separating a light-emitting element formed on a substrate, physically dividing the substrate along the division region, and removing a surface layer on at least one of the side faces of the substrate that is exposed by the dividing of the substrate.

摘要翻译： 发光元件的制造方法包括将激光发射到用于分离形成在基板上的发光元件的分割区域，沿着分割区域物理地分割基板，以及去除至少一个 通过基板的分割曝光的基板的侧面。

公开(公告)号：US20070222078A1

公开(公告)日：2007-09-27

申请号：US11723498

申请日：2007-03-20

申请人： Akira Furuya

发明人： Akira Furuya

IPC分类号： H01L23/52

CPC分类号： H01L23/522 ,  H01L21/76829 ,  H01L21/76831 ,  H01L21/76843 ,  H01L21/76859 ,  H01L21/76873 ,  H01L23/53238 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/3011 ,  H01L2924/00

摘要： A semiconductor device includes a first copper-containing conductive film formed on a substrate, insulating films formed on the first copper-containing conductive film with a concave portion reaching the first copper-containing conductive film, a second barrier insulating film formed to cover the side wall of the concave portion of these insulating films, a second adhesive alloy film made of copper and a dissimilar element other than copper, and coming in contact with the first copper-containing conductive film at the bottom surface of the concave portion and in contact with the second barrier insulating film at the side wall of the concave portion to cover the inside wall of the concave portion, and a second copper-containing conductive film containing copper as a main component, and formed on the second adhesive alloy film in contact with the second adhesive alloy film to fill the concave portion.

摘要翻译： 半导体器件包括：形成在基板上的第一含铜导电膜，形成在第一含铜导电膜上的绝缘膜，具有到达第一含铜导电膜的凹部;第二阻挡绝缘膜，形成为覆盖侧 这些绝缘膜的凹部的壁，由铜构成的第二粘合剂合金膜和铜以外的异种元素，并且与凹部的底面的第一含铜导电膜接触并与 在凹部的侧壁上的第二阻挡绝缘膜覆盖凹部的内壁，以及含有铜作为主要成分的第二含铜导电膜，并形成在与第二粘合合金膜接触的第二粘合合金膜上 第二粘合剂合金膜填充凹部。

公开(公告)号：US07270105B2

公开(公告)日：2007-09-18

申请号：US11348231

申请日：2006-02-07

申请人： Akira Furuya

发明人： Akira Furuya

IPC分类号： F01M1/02

CPC分类号： F01L1/02 ,  F01L1/024 ,  F01L1/026 ,  F01M1/04 ,  F01M2001/126 ,  F02D29/06

摘要： A slant engine for a utility engine which a cylinder is attached to the crankcase with slanted with respect to the a rotational direction of a crankshaft, comprises a reservoir oil tank formed outside of the crankcase at lower portion for reserving lubricant, a communication pipe connected to bottom portions of the reservoir oil tank and the crankcase for communicating the lubricant in the crankcase and the reservoir oil tank, and a vent pipe connected to both of the reservoir oil tank and the inside of the crankcase.

摘要翻译： 用于相对于曲轴的旋转方向倾斜地连接到曲轴箱的圆柱体用于公用事业发动机的倾斜发动机包括形成在曲轴箱外部的储油槽，用于储存润滑剂，连通管 储油罐油箱的底部和用于连通曲轴箱和油箱油箱中的润滑剂的曲轴箱以及连接到储油罐油箱和曲轴箱内部的排气管。

公开(公告)号：US20070165359A1

公开(公告)日：2007-07-19

申请号：US11604215

申请日：2006-11-27

申请人： Hajime Kuwajima ,  Masahiro Miyazaki ,  Akira Furuya

发明人： Hajime Kuwajima ,  Masahiro Miyazaki ,  Akira Furuya

IPC分类号： H01G4/005 ,  H01L29/00

CPC分类号： H01G4/33 ,  H01G4/008 ,  H01L28/40

摘要： A thin-film device comprises: a substrate; a flattening film made of an insulating material and disposed on the substrate; and a capacitor provided on the flattening film. The capacitor incorporates: a lower conductor layer; a dielectric film disposed on the lower conductor layer; and an upper conductor layer disposed on the dielectric film. The lower conductor layer incorporates: an electrode film; a first layer formed on the electrode film by electroplating; and a second layer formed on the first layer by PVD or CVD. The grain diameter of a metallic crystal of the second layer is smaller than that of the first layer.

摘要翻译： 薄膜器件包括：衬底; 由绝缘材料制成并设置在基板上的扁平薄膜; 以及设置在平坦化膜上的电容器。 电容器包括：下导体层; 设置在下导体层上的电介质膜; 以及设置在电介质膜上的上导体层。 下导体层包括：电极膜; 通过电镀形成在电极膜上的第一层; 以及通过PVD或CVD形成在第一层上的第二层。 第二层的金属晶体的粒径小于第一层的晶粒直径。

公开(公告)号：US20070109719A1

公开(公告)日：2007-05-17

申请号：US11598073

申请日：2006-11-13

申请人： Hajime Kuwajima ,  Akira Furuya ,  Masahiro Miyazaki ,  Makoto Shibata

发明人： Hajime Kuwajima ,  Akira Furuya ,  Masahiro Miyazaki ,  Makoto Shibata

IPC分类号： H01G4/06

CPC分类号： H01G4/33 ,  H01G4/228 ,  H01G4/40 ,  H01L23/5223 ,  H01L27/016 ,  H01L28/60 ,  H01L2924/0002 ,  H01L2924/00

摘要： The invention relates to an electronic component including a capacitor and provides an electronic component in which electromigration can be prevented and whose capacitor element has an accurate capacity value. The electronic component includes a bottom conductor formed on a substrate, a dielectric film formed to cover the bottom conductor, an organic insulation film formed on the dielectric film, and a top conductor formed in an opening provided in the organic insulation film over the bottom conductor, the top conductor forming a capacitor element in combination with the bottom conductor and the dielectric film.

摘要翻译： 本发明涉及包括电容器的电子部件，并且提供可以防止电迁移并且其电容器元件具有精确的容量值的电子部件。 电子部件包括形成在基板上的底部导体，形成为覆盖底部导体的电介质膜，形成在电介质膜上的有机绝缘膜，以及在底部导体上设置在有机绝缘膜中的开口中形成的顶部导体 ，顶部导体与底部导体和电介质膜组合形成电容器元件。

公开(公告)号：US20070097596A1

公开(公告)日：2007-05-03

申请号：US11583067

申请日：2006-10-19

申请人： Hajime Kuwajima ,  Masahiro Miyazaki ,  Akira Furuya

发明人： Hajime Kuwajima ,  Masahiro Miyazaki ,  Akira Furuya

IPC分类号： H01G4/06

CPC分类号： H01G4/33 ,  H01G4/01 ,  H05K1/162 ,  H05K3/244 ,  H05K2201/0179 ,  H05K2201/0347 ,  Y10T29/435

摘要： A thin-film device comprises a substrate and a capacitor provided on the substrate. The capacitor incorporates: a lower conductor layer disposed on the substrate; a dielectric film disposed on the lower conductor layer; and an upper conductor layer disposed on the dielectric film. The thickness of the dielectric film falls within a range of 0.02 to 1 μm inclusive and is smaller than the thickness of the lower conductor layer. The surface roughness in maximum height of the top surface of the lower conductor layer is equal to or smaller than the thickness of the dielectric film.

摘要翻译： 薄膜器件包括衬底和设置在衬底上的电容器。 电容器包括：设置在基板上的下导体层; 设置在下导体层上的电介质膜; 以及设置在电介质膜上的上导体层。 电介质膜的厚度在0.02〜1μm的范围内，小于下导体层的厚度。 下导体层的上表面的最大高度的表面粗糙度等于或小于电介质膜的厚度。

公开(公告)号：US20070089904A1

公开(公告)日：2007-04-26

申请号：US11528331

申请日：2006-09-28

申请人： Akira Furuya ,  Masahiro Miyazaki ,  Hajime Kuwajima ,  Makoto Shibata

发明人： Akira Furuya ,  Masahiro Miyazaki ,  Hajime Kuwajima ,  Makoto Shibata

IPC分类号： H01L23/28

CPC分类号： H01F17/0006 ,  H01F27/29 ,  H01F2017/0046 ,  H01G4/228 ,  H01G4/252

摘要： The invention relates to a surface mount type electronic component to be mounted on a printed circuit board or a hybrid IC (HIC) and provides a low-cost electronic component which is reliable in terms of heat resistance and pressure resistance. An inductor as the electronic component has a general outline in the form of a rectangular parallelepiped, provided by forming a lead-out electrode having a multi-layer structure on a substrate and forming a protective layer for protecting the lead-out electrode using thin film forming techniques. The lead-out electrode includes a first electrode which is electrically connected to a coil conductor and which has an exposed part exposed on an outer surface and a second electrode which has an exposed part exposed on the outer surface to extend an electrode width different from an electrode width of the first electrode and which is formed directly above the first electrode and electrically connected to the first electrode.

摘要翻译： 本发明涉及一种安装在印刷电路板或混合IC（HIC）上的表面贴装型电子元件，并且提供了一种在耐热性和耐压性方面是可靠的低成本电子部件。 作为电子部件的电感器具有长方体形状的一般轮廓，通过在基板上形成具有多层结构的引出电极，并形成用于使用薄膜保护引出电极的保护层 成型技术。 引出电极包括电连接到线圈导体并且具有暴露在外表面上的暴露部分的第一电极和具有暴露在外表面上的暴露部分的第二电极，以延伸不同于 第一电极的电极宽度，并且直接形成在第一电极的上方并与第一电极电连接。

公开(公告)号：US20060237319A1

公开(公告)日：2006-10-26

申请号：US11408172

申请日：2006-04-21

申请人： Akira Furuya ,  Yasuaki Tsuchiya

发明人： Akira Furuya ,  Yasuaki Tsuchiya

IPC分类号： C25D5/00

CPC分类号： C25D5/00 ,  C25D5/18 ,  C25D7/123 ,  C25D17/001 ,  H01L21/2885 ,  H01L21/76849 ,  H01L21/76877

摘要： An objective of this invention is to reliably form a plating film. The following two steps are sequentially conducted: step 101 of connecting a film-formation surface of a wafer 109 to a cathode electrode 107, making the film-formation surface inclined from the surface of a plating solution 103 and immersing the wafer 109 into the plating solution 103 with applying a first current between the cathode electrode 107 and an Cu anode electrode 105 disposed in the plating solution 103, and step 103 of, after immersing the film-formation surface in the plating solution 103, applying a second current between the cathode electrode 107 and the Cu anode electrode 105 to form a metal film on the film-formation surface by electrolytic plating. In step 101, the first current is controlled on the basis of an inclination angle between the liquid surface and the film-formation surface.

摘要翻译： 本发明的目的是可靠地形成镀膜。 顺序进行以下两个步骤：将晶片109的成膜表面连接到阴极电极107的步骤101，使得成膜表面从电镀液103的表面倾斜并将晶片109浸入电镀 溶液103，其在阴极电极107和布置在电镀液103中的Cu阳极电极105之间施加第一电流;步骤103，在将成膜表面浸渍在电镀液103中之后，在阴极 电极107和Cu阳极电极105，通过电解电镀在成膜面上形成金属膜。 在步骤101中，基于液面和成膜面之间的倾斜角来控制第一电流。

公开(公告)号：US20050121786A1

公开(公告)日：2005-06-09

申请号：US10979326

申请日：2004-11-03

申请人： Akira Furuya ,  Nobuyuki Ohtsuka ,  Shinichi Ogawa ,  Hiroshi Okamura

发明人： Akira Furuya ,  Nobuyuki Ohtsuka ,  Shinichi Ogawa ,  Hiroshi Okamura

IPC分类号： H01L21/00 ,  H01L21/316 ,  H01L21/4763 ,  H01L21/768 ,  H01L23/48 ,  H01L23/522 ,  H01L23/532 ,  H01L29/40

CPC分类号： H01L21/76843 ,  H01L21/76864 ,  H01L21/76877 ,  H01L23/53238 ,  H01L23/5329 ,  H01L2221/1047 ,  H01L2924/0002 ,  H01L2924/00

摘要： A semiconductor device comprises a semiconductor substrate and an interlayer interconnection structure provided on the semiconductor substrate. The interlayer interconnection structure includes a porous insulation film and a conductive part of a conductive material containing a metal as a major component. A volume occupation ratio of pores of a diameter greater than 0.6 nanometers is less than 30% in the porous insulation film.

摘要翻译： 半导体器件包括设置在半导体衬底上的半导体衬底和层间互连结构。 层间互连结构包括多孔绝缘膜和以金属为主要成分的导电材料的导电部分。 在多孔绝缘膜中，直径大于0.6纳米的孔的体积占有率小于30％。

公开(公告)号：US06501090B2

公开(公告)日：2002-12-31

申请号：US10044979

申请日：2002-01-15

申请人： Akira Furuya ,  Chikashi Anayama ,  Katsumi Sugiura ,  Kensei Nakao ,  Taro Hasegawa

发明人： Akira Furuya ,  Chikashi Anayama ,  Katsumi Sugiura ,  Kensei Nakao ,  Taro Hasegawa

IPC分类号： H01L2906

CPC分类号： B82Y20/00 ,  H01L21/02395 ,  H01L21/0243 ,  H01L21/02433 ,  H01L21/02461 ,  H01L21/02463 ,  H01L21/02505 ,  H01L21/02546 ,  H01L21/02576 ,  H01L21/0262 ,  H01S5/2201 ,  H01S5/2238 ,  H01S5/305 ,  H01S5/3054 ,  H01S5/34326 ,  H01S5/3436 ,  H01S2301/173 ,  H01S2304/04

摘要： In the S3-type semiconductor laser, when an angle of a first growth profile line to the first principal plane, the first growth profile line connecting respective lower side lines of an upper inclined plane and a lower inclined plane of the first layer of the first conduction type cladding layer is &thgr;1, an angle of a second growth profile line to the first principal plane, the second growth profile line connecting respective lower side lines of an upper inclined plane and a lower inclined plane of the second layer of the first conduction type cladding layer is &thgr;2, an angle of a third growth profile line to the first principal plane, the third growth profile line connecting respective lower side lines of an upper inclined plane and a lower inclined plane of the third layer of the first conduction type cladding layer is &thgr;3, and an angle of a fourth growth profile line to the first principal plane, the fourth growth profile line connecting respective lower side lines of an upper inclined plane and a lower inclined plane of the fourth layer of the first conduction type cladding layer is &thgr;4, relationships &thgr;1 &thgr;3, &thgr;3

摘要翻译： 在S3型半导体激光器中，当第一生长曲线与第一主平面的角度为第一生长曲线时，连接第一生长轮廓线的第一生长曲线和第一生长曲线 导电型包层为θ1，第二生长曲线与第一主平面的角度，第二生长曲线，连接第一导电类型的第二层的上倾斜面和下倾斜面的下侧线 包层是θ2，第三生长轮廓线与第一主平面的角度，第三生长轮廓线连接第一导电型包层的第三层的上倾斜平面和下倾斜平面的下侧线 是θ3，以及第四生长曲线与第一主平面的角度，第四生长曲线连接着上部的各个下边线 r倾斜面和第一导电型包层的第四层的下倾斜面是θ4，可以满足关系θ1，θ2，θ3，θ3。