公开(公告)号：US6130837A

公开(公告)日：2000-10-10

申请号：US782344

申请日：1997-01-13

申请人： Hajime Yamagami ,  Kouichi Terada ,  Yoshihiro Hayashi ,  Takashi Tsunehiro ,  Kunihiro Katayama ,  Kenichi Kaki ,  Takeshi Furuno

发明人： Hajime Yamagami ,  Kouichi Terada ,  Yoshihiro Hayashi ,  Takashi Tsunehiro ,  Kunihiro Katayama ,  Kenichi Kaki ,  Takeshi Furuno

IPC分类号： G06F3/06 ,  G11C16/10 ,  G11C29/00 ,  G11C17/00

CPC分类号： G11C29/765 ,  G06F3/0601 ,  G06F3/0616 ,  G06F3/0659 ,  G06F3/0679 ,  G11C16/102 ,  G06F2003/0694 ,  G06F2212/2022 ,  G06F3/0664

摘要： A semiconductor disk wherein a flash memory into which data is rewritten in block units is employed as a storage medium, said a semiconductor disk comprises a data memory in which file data are stored, a substitutive memory which substitutes for blocks of errors in the data memory, an error memory in which error information of the data memory are stored, and a memory controller which reads data out of, writes data into and erases data from the data memory, the substitutive memory and the error memory. Since the write errors of the flash memory can be remedied, the service life of the semiconductor disk can be increased.

摘要翻译： 其中以块为单位重写数据的闪速存储器的半导体盘被用作存储介质，所述半导体盘包括存储文件数据的数据存储器，代替数据存储器中的错误块的替换存储器 ，存储有数据存储器的错误信息的错误存储器，以及从数据存储器，替代存储器和错误存储器读取数据并将数据写入数据存储器，替换存储器和错误存储器中的数据的存储器控​​制器。 由于可以补救闪速存储器的写入错误，所以可以提高半导体盘的使用寿命。

公开(公告)号：US5928661A

公开(公告)日：1999-07-27

申请号：US864990

申请日：1997-05-29

申请人： Masao Fujita ,  Shuji Hirohama ,  Yoshihiro Hayashi ,  Shinichi Igarashi ,  Yuichi Mizukami ,  Yasushi Sekiyama ,  Asami Takata

发明人： Masao Fujita ,  Shuji Hirohama ,  Yoshihiro Hayashi ,  Shinichi Igarashi ,  Yuichi Mizukami ,  Yasushi Sekiyama ,  Asami Takata

IPC分类号： A01N65/06 ,  A01P7/04 ,  A01N25/34

CPC分类号： A01N25/18 ,  A01N47/46

摘要： A controlled release composition comprising a volatile compound such as allyl isothiocyanate and a rosin in a proportion of 0.1 to 100 parts by weight of the compound per 100 parts by weight of the rosin, the controlled release composition further comprising a plasticizer, and the controlled release composition laminated on a substrate or in other forms. The AIT controlled release composition of the present invention can be used for emission of aroma, antimicrobial effect, antibacterial effect, insecticidal action, insectproof effect, fungicidal action, fungiproof action, freshness retention, antiseptic or preservative effect and the like.

摘要翻译： 一种控释组合物，其包含挥发性化合物，例如异硫氰酸烯丙酯和松香，其比例为每100重量份松香0.1至100重量份的化合物，控释组合物还包含增塑剂和控制释放 组合物层压在基材上或以其它形式。 本发明的AIT控释组合物可用于发出香气，抗微生物作用，抗菌作用，杀虫作用，防虫效果，杀真菌作用，杀真菌作用，保鲜，防腐或防腐作用等。

公开(公告)号：US5880024A

公开(公告)日：1999-03-09

申请号：US570241

申请日：1995-12-11

申请人： Tsutomu Nakajima ,  Yoshihiro Hayashi

发明人： Tsutomu Nakajima ,  Yoshihiro Hayashi

IPC分类号： H05K9/00 ,  H01L21/311 ,  H01L21/3205 ,  H01L21/768 ,  H01L23/52 ,  H01L23/522 ,  H01L23/532 ,  H05K1/02 ,  H05K3/10 ,  H01L21/461

CPC分类号： H01L23/532 ,  H01L21/31144 ,  H01L21/76838 ,  H01L23/5225 ,  H01L2924/0002 ,  H05K1/0218 ,  H05K3/107

摘要： A semiconductor integrated circuit device has circuit components, a wiring arrangement electrically connected to the circuit components and a shield structure for preventing signal wirings from a cross-talk between the signal wirings, and the signal wirings are patterned from a conductive layer extending over grooves formed in the shield structure so as to be self-aligned with the shield structure.

摘要翻译： 半导体集成电路器件具有电路部件，电连接到电路部件的布线布置和用于防止信号布线与信号布线之间的串扰的信号布线的屏蔽结构，并且信号布线从在形成的沟槽上延伸的导电层图案化 在屏蔽结构中以与屏蔽结构自对准。

公开(公告)号：US5550427A

公开(公告)日：1996-08-27

申请号：US404839

申请日：1995-03-15

申请人： Yoshihiro Hayashi

发明人： Yoshihiro Hayashi

IPC分类号： H01L21/285 ,  H01L21/28 ,  H01L21/321 ,  H01L21/60 ,  H01L23/485 ,  H01L29/00

CPC分类号： H01L24/11 ,  H01L24/13 ,  H01L2224/10126 ,  H01L2224/114 ,  H01L2224/11474 ,  H01L2224/1148 ,  H01L2224/116 ,  H01L2224/13099 ,  H01L2224/131 ,  H01L2224/13565 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01019 ,  H01L2924/01022 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/09701 ,  H01L2924/10329

摘要： A fine substrate contact electrode (bump) made of a refractory metal having low resistance and sufficient mechanical strength is fabricated on a wiring substrate with a polyimide resin film serving as an electrically insulating layer. It is not the entire surface of the contact electrode that is covered with a high-resistance oxide film since the top surface of the refractory metal such as tungsten is covered with an oxidation-resistant metal film. The substrate contact electrode has a sufficient mechanical strength since the side of the tungsten bump is surrounded by a side wall reinforcement film even where the tungsten formed by the blanket chemical vapor deposition method is polycrystalline. Since the polyimide film is previously embedded before the substrate contact electrode is fabricated, the electrode can be formed on the polyimide film having a desired thickness on the entire substrate surface.

摘要翻译： 在作为电绝缘层的聚酰亚胺树脂膜的布线基板上制造由具有低电阻和足够的机械强度的难熔金属制成的细的基板接触电极（凸块）。 由于诸如钨的难熔金属的顶表面被抗氧化金属膜覆盖，所以接触电极的整个表面不被高电阻氧化膜覆盖。 衬底接触电极具有足够的机械强度，因为即使在通过毯式化学气相沉积法形成的钨是多晶的情况下，钨凸块的侧面被侧壁增强膜包围。 由于在制造基板接触电极之前预先嵌入聚酰亚胺膜，所以可以在整个基板表面上在具有期望厚度的聚酰亚胺膜上形成电极。

公开(公告)号：US5336929A

公开(公告)日：1994-08-09

申请号：US978373

申请日：1992-11-18

申请人： Yoshihiro Hayashi

发明人： Yoshihiro Hayashi

IPC分类号： H01L21/288 ,  H01L21/60 ,  H01L21/768 ,  H01L23/522 ,  H01L23/48 ,  H01L29/46 ,  H01L29/54 ,  H01L29/62

CPC分类号： H01L24/80 ,  H01L2924/01013 ,  H01L2924/01019 ,  H01L2924/01033 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/10329

摘要： A semiconductor structure according to the present invention includes a diffusion preventing layer for preventing a diffusion of a brazing metal layer, for instance, Au/In. The structure is interconnected to another structure by brazing.

摘要翻译： 根据本发明的半导体结构包括用于防止钎焊金属层例如Au / In扩散的扩散防止层。 该结构通过钎焊与另一结构相互连接。

公开(公告)号：US4460198A

公开(公告)日：1984-07-17

申请号：US70906

申请日：1979-08-29

申请人： Naoshi Sasase ,  Nobukatsu Inagaki ,  Yoshihiro Hayashi ,  Yuji Nishimura

发明人： Naoshi Sasase ,  Nobukatsu Inagaki ,  Yoshihiro Hayashi ,  Yuji Nishimura

IPC分类号： A44B11/25 ,  B60R22/06 ,  B60R21/10

CPC分类号： B60R22/06 ,  A44B11/2507

摘要： An outer end portion of a webbing is guided in the longitudinal direction of the vehicle, and a tongue plate provided on said outer end portion is engaged with a buckle device secured to the rear portion of a roof side, whereby the webbing is fastened to an occupant. A release plate movable a certain distance with respect to the tongue plate is moved forwards in the vehicle by drive means, whereby the tongue plate is moved forwards in the vehicle after the tongue plate is disengaged from the buckle device, so that the webbing can be separated from the occupant to automatically unfasten the webbing from the occupant.

摘要翻译： 带状物的外端部沿着车辆的长度方向被引导，并且设置在所述外端部上的舌板与固定在屋顶侧的后部的带扣装置接合，由此将织带固定到 乘客。 相对于舌板可移动一定距离的释放板通过驱动装置在车辆中向前移动，由此在舌板从带扣装置脱离之后，舌板在车辆中向前移动，使得织带可以 与乘员分离，自动从乘员身上松开织带。

公开(公告)号：US4347139A

公开(公告)日：1982-08-31

申请号：US132848

申请日：1980-03-24

申请人： Yoshihiro Hayashi

发明人： Yoshihiro Hayashi

IPC分类号： B01D69/10 ,  B01D13/00

CPC分类号： B01D69/127

摘要： A membrane for reverse osmosis comprising a porous base and a thin high polymer film attached to the porous base. The high polymer film includes at least one layer of radical polymer of nitrogen contained monomer and alkyl metal and at least one layer of polymer of nitrogen contained monomer which are alternately laminated on the porous base. The membrane is manufactured by combining the step of introducing nitrogen containing monomer, alkyl metal and the inert carrier gas into a plasma created by glow discharge to cause a radical polymerization reaction between nitrogen containing monomer and alkyl metal on the porous base disposed within the plasma, and the step of introducing in the plasma a nitrogen containing monomer and an inert carrier gas to cause polymerization of nitrogen containing monomer on the porous base.

摘要翻译： 一种用于反渗透的膜，包括多孔基底和连接到多孔基底上的薄的高聚合物膜。 高分子膜包括至少一层含氮单体和烷基金属的自由基聚合物层和交替层压在多孔基底上的含氮单体的至少一层聚合物。 通过将含氮单体，烷基金属和惰性载气引入由辉光放电产生的等离子体的步骤，在设置在等离子体内的多孔基底上的含氮单体和烷基金属之间进行自由基聚合反应， 以及在等离子体中引入含氮单体和惰性载气以使含氮单体聚合在多孔基底上的步骤。

公开(公告)号：US08901553B2

公开(公告)日：2014-12-02

申请号：US13476468

申请日：2012-05-21

申请人： Naoya Inoue ,  Kishou Kaneko ,  Yoshihiro Hayashi

发明人： Naoya Inoue ,  Kishou Kaneko ,  Yoshihiro Hayashi

IPC分类号： H01L21/336 ,  H01L29/12 ,  H01L29/78 ,  H01L29/786 ,  H01L21/768 ,  H01L23/532 ,  H01L27/12 ,  H01L23/522 ,  H01L29/423

CPC分类号： H01L29/42384 ,  H01L21/02167 ,  H01L21/0217 ,  H01L21/02565 ,  H01L21/76829 ,  H01L21/76877 ,  H01L23/522 ,  H01L23/5226 ,  H01L23/5329 ,  H01L23/53295 ,  H01L27/1225 ,  H01L27/124 ,  H01L29/4908 ,  H01L29/66969 ,  H01L29/78606 ,  H01L29/78618 ,  H01L29/7869 ,  H01L29/78696 ,  H01L2924/0002 ,  H01L2924/00

摘要： The present invention makes it possible to lower the on resistance of a semiconductor element without hindering the function of a diffusion prevention film in a semiconductor device having the semiconductor element that uses a wire in a wiring layer as a gate electrode and has a gate insulation film in an identical layer to the diffusion prevention film. A first wire and a gate electrode are embedded into the surface layer of an insulation layer comprising a first wiring layer. A diffusion prevention film is formed between the first wiring layer and a second wiring layer. A gate insulation film is formed by: forming a recess over the upper face of the diffusion prevention film in the region overlapping with the gate electrode and around the region; and thinning the part.

摘要翻译： 本发明可以降低半导体元件的导通电阻，而不会妨碍具有使用布线层中的导线的半导体元件作为栅电极的半导体器件中的扩散防止膜的功能，并具有栅极绝缘膜 在与扩散防止膜相同的层中。 第一导线和栅电极嵌入到包括第一布线层的绝缘层的表面层中。 在第一布线层和第二布线层之间形成扩散防止膜。 栅极绝缘膜通过以下方式形成：在与栅电极重叠的区域和区域周围形成在扩散防止膜的上表面上的凹部; 并使部件变薄。

公开(公告)号：US08835190B2

公开(公告)日：2014-09-16

申请号：US13373098

申请日：2011-11-04

申请人： Kishou Kaneko ,  Naoya Inoue ,  Yoshihiro Hayashi

发明人： Kishou Kaneko ,  Naoya Inoue ,  Yoshihiro Hayashi

IPC分类号： H01L21/00 ,  H01L23/522 ,  H01L23/552

CPC分类号： H01L23/552 ,  H01L23/5227 ,  H01L2924/0002 ,  H01L2924/00

摘要： A method for manufacturing a semiconductor apparatus includes forming a semiconductor device on a principal surface of a substrate, in which the semiconductor device includes an interconnect layer, forming a buffer film which covers the semiconductor device and prevents diffusion of a magnetic material, and forming a magnetic shielding film which covers the buffer film and includes the magnetic material.

摘要翻译： 一种半导体装置的制造方法，其特征在于，在基板的主面上形成半导体装置，所述半导体装置具有互连层，形成覆盖所述半导体装置的缓冲膜，防止磁性材料的扩散，形成 覆盖缓冲膜并包括磁性材料的磁屏蔽膜。

公开(公告)号：US08803285B2

公开(公告)日：2014-08-12

申请号：US11745673

申请日：2007-05-08

申请人： Hiroto Ohtake ,  Naoya Inoue ,  Ippei Kume ,  Takeshi Toda ,  Yoshihiro Hayashi

发明人： Hiroto Ohtake ,  Naoya Inoue ,  Ippei Kume ,  Takeshi Toda ,  Yoshihiro Hayashi

IPC分类号： H01L29/00

CPC分类号： H01L23/5223 ,  H01L27/10852 ,  H01L28/40 ,  H01L2924/0002 ,  H01L2924/00

摘要： A semiconductor device has a capacitive structure formed by sequentially layering, on a wiring or conductive plug, a lower electrode, a capacitive insulation film, and an upper electrode. The semiconductor device has, as the capacitive structure, a thin-film capacitor having a lower electrode structure composed of an amorphous or microcrystalline film or a laminate of these films formed on a polycrystalline film.

摘要翻译： 半导体器件具有通过在布线或导电插塞上依次层叠下电极，电容绝缘膜和上电极形成的电容结构。 半导体器件具有作为电容结构的具有由非晶或微晶膜构成的下电极结构的薄膜电容器或者形成在多晶膜上的这些膜的层压体。