公开(公告)号：US20120319113A1

公开(公告)日：2012-12-20

申请号：US13484740

申请日：2012-05-31

申请人： Shunpei YAMAZAKI

发明人： Shunpei YAMAZAKI

IPC分类号： H01L29/786 ,  H01L21/44

CPC分类号： H01L29/78618 ,  H01L29/66969 ,  H01L29/7869 ,  H01L29/78696

摘要： At least part of the oxide semiconductor layer which serves as the channel formation region is thinned by etching and the thickness of the channel formation region is adjusted by the etching. Further, a dopant containing phosphorus (P) or boron (B) is introduced into a thick region of the oxide semiconductor layer to form a source region and a drain region in the oxide semiconductor layer, so that the contact resistance between the source and drain regions and the channel formation region which are connected to each other is reduced.

摘要翻译： 作为沟道形成区域的氧化物半导体层的至少一部分通过蚀刻变薄，通过蚀刻来调整沟道形成区域的厚度。 此外，将含磷（P）或硼（B）的掺杂剂引入到氧化物半导体层的厚区域中，以在氧化物半导体层中形成源极区域和漏极区域，使得源极和漏极 彼此连接的区域和沟道形成区域减少。

公开(公告)号：US20120319102A1

公开(公告)日：2012-12-20

申请号：US13488879

申请日：2012-06-05

申请人： Shunpei YAMAZAKI ,  Tatsuya HONDA

发明人： Shunpei YAMAZAKI ,  Tatsuya HONDA

IPC分类号： H01L29/786 ,  H01L21/34

CPC分类号： H01L29/78609 ,  H01L21/02554 ,  H01L21/02565 ,  H01L27/1225 ,  H01L27/14616 ,  H01L29/045 ,  H01L29/66969 ,  H01L29/78621 ,  H01L29/7869 ,  H01L29/78696

摘要： An object is to provide a structure of a transistor which has a channel formation region formed using an oxide semiconductor and a positive threshold voltage value, which enables a so-called normally-on switching element. The transistor includes an oxide semiconductor stack in which at least a first oxide semiconductor layer and a second oxide semiconductor layer with different energy gaps are stacked and a region containing oxygen in excess of its stoichiometric composition ratio is provided.

摘要翻译： 本发明的目的是提供一种晶体管的结构，其具有使用氧化物半导体形成的沟道形成区域和正的阈值电压值，这使得能够形成所谓的常开开关元件。 晶体管包括氧化物半导体堆叠，其中至少第一氧化物半导体层和具有不同能隙的第二氧化物半导体层被堆叠，并且提供含有超过其化学计量组成比的氧的区域。

公开(公告)号：US20120305912A1

公开(公告)日：2012-12-06

申请号：US13570297

申请日：2012-08-09

申请人： Jun KOYAMA ,  Shunpei YAMAZAKI

发明人： Jun KOYAMA ,  Shunpei YAMAZAKI

IPC分类号： H01L29/12

CPC分类号： H01L27/1225 ,  G02F1/133345 ,  G02F1/134309 ,  G02F1/13452 ,  G02F1/13454 ,  G02F1/136286 ,  G02F1/1368 ,  G02F2201/123 ,  G09G3/3266 ,  G09G3/3275 ,  G09G3/3677 ,  G09G3/3688 ,  G09G2300/0426 ,  G09G2310/0286 ,  G09G2310/08 ,  G09G2330/023 ,  H01L27/124 ,  H01L27/1285 ,  H01L29/045 ,  H01L29/66742 ,  H01L29/66969 ,  H01L29/7869

摘要： One embodiment of the present invention provides a highly reliably display device in which a high mobility is achieved in an oxide semiconductor. A first oxide component is formed over a base component. Crystal growth proceeds from a surface toward an inside of the first oxide component by a first heat treatment, so that a first oxide crystal component is formed in contact with at least part of the base component. A second oxide component is formed over the first oxide crystal component. Crystal growth is performed by a second heat treatment using the first oxide crystal component as a seed, so that a second oxide crystal component is formed. Thus, a stacked oxide material is formed. A transistor with a high mobility is formed using the stacked oxide material and a driver circuit is formed using the transistor.

摘要翻译： 本发明的一个实施例提供了一种在氧化物半导体中实现高迁移率的高度可靠的显示装置。 第一氧化物组分形成在基底组分上。 晶体生长通过第一次热处理从第一氧化物组分的表面向内部进行，从而形成第一氧化物晶体组分与至少一部分基础组分接触。 在第一氧化物晶体组分上形成第二氧化物组分。 通过使用第一氧化物晶体成分作为种子的第二次热处理进行晶体生长，从而形成第二氧化物晶体成分。 因此，形成堆叠的氧化物材料。 使用层叠的氧化物材料形成具有高迁移率的晶体管，并且使用该晶体管形成驱动电路。

公开(公告)号：US20120299001A1

公开(公告)日：2012-11-29

申请号：US13488926

申请日：2012-06-05

申请人： Shunpei YAMAZAKI ,  Hideaki KUWABARA ,  Yasuyuki ARAI

发明人： Shunpei YAMAZAKI ,  Hideaki KUWABARA ,  Yasuyuki ARAI

IPC分类号： H01L29/786

CPC分类号： H01L27/1222 ,  G02F1/133345 ,  G02F1/1339 ,  G02F1/134309 ,  G02F1/13439 ,  G02F1/13452 ,  G02F1/13458 ,  G02F1/136204 ,  G02F1/136227 ,  G02F1/136286 ,  G02F1/1368 ,  G02F2001/136231 ,  G02F2001/136295 ,  G02F2201/123 ,  G02F2202/103 ,  G02F2202/105 ,  G02F2202/28 ,  H01L21/67161 ,  H01L21/67167 ,  H01L21/67207 ,  H01L21/67225 ,  H01L21/67236 ,  H01L27/1218 ,  H01L27/124 ,  H01L27/1244 ,  H01L27/1255 ,  H01L27/1288 ,  H01L29/66765 ,  H01L29/78669

摘要： [Problem]A TFT is manufactured using at least five photomasks in a conventional liquid crystal display device, and therefore the manufacturing cost is high.[Solving Means]By performing the formation of the pixel electrode 127, the source region 123 and the drain region 124 by using three photomasks in three photolithography steps, a liquid crystal display device prepared with a pixel TFT portion, having a reverse stagger type n-channel TFT, and a storage capacitor can be realized,

摘要翻译： [问题]在传统的液晶显示装置中，使用至少五个光掩模制造TFT，因此制造成本高。 [解决方案]通过在三个光刻步骤中使用三个光掩模来执行像素电极127，源极区域123和漏极区域124的形成，制备具有反向交错型n型的像素TFT部分的液晶显示装置 通道TFT和存储电容器，

公开(公告)号：US20120274879A1

公开(公告)日：2012-11-01

申请号：US13542693

申请日：2012-07-06

申请人： Yasuhiro JINBO ,  Masafumi MORISUE ,  Hajime KIMURA ,  Shunpei YAMAZAKI

发明人： Yasuhiro JINBO ,  Masafumi MORISUE ,  Hajime KIMURA ,  Shunpei YAMAZAKI

IPC分类号： G02F1/13357 ,  G09F13/04

CPC分类号： H01L27/1266 ,  G02F1/133305 ,  G02F1/133603 ,  H01L21/6835 ,  H01L27/1214 ,  H01L27/153 ,  H01L33/0079 ,  H01L33/62 ,  H01L51/003 ,  H01L2221/68318 ,  H01L2221/68386

摘要： The present invention provides a manufacturing technique of a semiconductor device and a display device using a peeling process, in which a transfer process can be conducted with a good state in which a shape and property of an element before peeling are kept. Further, the present invention provides a manufacturing technique of more highly reliable semiconductor devices and display devices with high yield without complicating the apparatus and the process for manufacturing. According to the present invention, an organic compound layer including a photocatalyst substance is formed over a first substrate having a light-transmitting property, an element layer is formed over the organic compound layer including a photocatalyst substance, the organic compound layer including a photocatalyst substance is irradiated with light which has passed through the first substrate, and the element layer is peeled from the first substrate.

摘要翻译： 本发明提供一种使用剥离工艺的半导体器件和显示装置的制造技术，其中可以以保持剥离之前元件的形状和特性的良好状态进行转印处理。 此外，本发明提供了一种更高可靠性的高可靠性的半导体器件和显示器件的制造技术，而不会使器件和制造过程复杂化。 根据本发明，在具有透光性的第一基板上形成包含光催化剂物质的有机化合物层，在包含光催化剂物质的有机化合物层上形成元素层，所述有机化合物层包含光催化剂物质 被穿过第一衬底的光照射，并且元件层从第一衬底剥离。

公开(公告)号：US20120273779A1

公开(公告)日：2012-11-01

申请号：US13546345

申请日：2012-07-11

申请人： Shunpei YAMAZAKI ,  Hidekazu MIYAIRI ,  Kengo AKIMOTO ,  Kojiro SHIRAISHI

发明人： Shunpei YAMAZAKI ,  Hidekazu MIYAIRI ,  Kengo AKIMOTO ,  Kojiro SHIRAISHI

IPC分类号： H01L29/786

CPC分类号： H01L29/7869 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02631 ,  H01L27/016 ,  H01L27/1218 ,  H01L27/1225 ,  H01L27/124 ,  H01L27/1248 ,  H01L27/1255 ,  H01L27/15 ,  H01L27/3225 ,  H01L27/3241 ,  H01L27/3248 ,  H01L27/3258 ,  H01L29/45 ,  H01L29/4908 ,  H01L29/513 ,  H01L29/518 ,  H01L29/66742 ,  H01L29/786 ,  H01L29/78618

摘要： In an active matrix display device, electric characteristics of thin film transistors included in a circuit are important, and performance of the display device depends on the electric characteristics. Thus, by using an oxide semiconductor film including In, Ga, and Zn for an inverted staggered thin film transistor, variation in electric characteristics of the thin film transistor can be reduced. Three layers of a gate insulating film, an oxide semiconductor layer and a channel protective layer are successively formed by a sputtering method without being exposed to air. Further, in the oxide semiconductor layer, the thickness of a region overlapping with the channel protective film is larger than that of a region in contact with a conductive film.

摘要翻译： 在有源矩阵显示装置中，包括在电路中的薄膜晶体管的电特性是重要的，显示装置的性能取决于电特性。 因此，通过使用包括In，Ga和Zn的氧化物半导体膜用于反向交错薄膜晶体管，可以减小薄膜晶体管的电特性的变化。 通过溅射法连续地形成三层栅极绝缘膜，氧化物半导体层和沟道保护层，而不暴露于空气。 此外，在氧化物半导体层中，与沟道保护膜重叠的区域的厚度大于与导电膜接触的区域的厚度。

公开(公告)号：US20120256178A1

公开(公告)日：2012-10-11

申请号：US13426641

申请日：2012-03-22

申请人： Shunpei YAMAZAKI

发明人： Shunpei YAMAZAKI

IPC分类号： H01L29/78 ,  H01L21/36 ,  H01L29/24 ,  H01L29/22

CPC分类号： H01L29/7869 ,  H01L29/78603

摘要： A transistor including an oxide semiconductor with favorable electric characteristics and a manufacturing method thereof are provided. A semiconductor device includes a transistor. The transistor includes an oxide semiconductor film over a base insulating film, a gate electrode overlapping with the oxide semiconductor film with a gate insulating film interposed therebetween, and a pair of electrodes in contact with the oxide semiconductor film and serving as a source electrode and a drain electrode. The base insulating film includes a first oxide insulating film partly in contact with the oxide semiconductor film and a second oxide insulating film in the periphery of the first oxide insulating film. An end portion of the oxide semiconductor film which crosses the channel width direction of the transistor is located over the second oxide insulating film.

摘要翻译： 提供一种包括具有良好电特性的氧化物半导体的晶体管及其制造方法。 半导体器件包括晶体管。 晶体管包括在基底绝缘膜上的氧化物半导体膜，与氧化物半导体膜重叠的栅电极，其间插入有栅极绝缘膜，以及与氧化物半导体膜接触并用作源电极的一对电极和 漏电极。 基底绝缘膜包括与氧化物半导体膜部分接触的第一氧化物绝缘膜和在第一氧化物绝缘膜的周围的第二氧化物绝缘膜。 氧化物半导体膜的与晶体管的沟道宽度方向交叉的端部位于第二氧化物绝缘膜的上方。

公开(公告)号：US20120256177A1

公开(公告)日：2012-10-11

申请号：US13426640

申请日：2012-03-22

申请人： Shunpei YAMAZAKI

发明人： Shunpei YAMAZAKI

IPC分类号： H01L29/78 ,  H01L21/336

CPC分类号： H01L29/7869 ,  H01L21/76283 ,  H01L21/84 ,  H01L27/1203 ,  H01L29/66772

摘要： A transistor including an oxide semiconductor with favorable electric characteristics and a manufacturing method thereof are provided. A semiconductor device includes a transistor. The transistor includes an oxide semiconductor film over a base insulating film, a gate electrode overlapping with the oxide semiconductor film with a gate insulating film interposed therebetween, and a pair of electrodes in contact with the oxide semiconductor film and serving as a source electrode and a drain electrode. The base insulating film includes a first oxide insulating film partly in contact with the oxide semiconductor film and a second oxide insulating film in the periphery of the first oxide insulating film. An end portion of the oxide semiconductor film which crosses the channel width direction of the transistor is located over the first oxide insulating film.

摘要翻译： 提供一种包括具有良好电特性的氧化物半导体的晶体管及其制造方法。 半导体器件包括晶体管。 晶体管包括在基底绝缘膜上的氧化物半导体膜，与氧化物半导体膜重叠的栅电极，其间插入有栅极绝缘膜，以及与氧化物半导体膜接触并用作源电极的一对电极和 漏电极。 基底绝缘膜包括与氧化物半导体膜部分接触的第一氧化物绝缘膜和在第一氧化物绝缘膜的周围的第二氧化物绝缘膜。 氧化物半导体膜的与晶体管的沟道宽度方向交叉的端部位于第一氧化物绝缘膜的上方。

公开(公告)号：US20120252160A1

公开(公告)日：2012-10-04

申请号：US13429977

申请日：2012-03-26

申请人： Shunpei YAMAZAKI

发明人： Shunpei YAMAZAKI

IPC分类号： H01L21/44

CPC分类号： H01L29/4908 ,  H01L29/66969 ,  H01L29/78606 ,  H01L29/7869

摘要： In a method for manufacturing a transistor including an oxide semiconductor layer, a gate electrode is formed and then an aluminum oxide film, a silicon oxide film, and the oxide semiconductor film are successively formed in an in-line apparatus without being exposed to the air and are subjected to heating and oxygen adding treatment in the in-line apparatus. Then, the transistor is covered with another aluminum oxide film and is subjected to heat treatment, so that the oxide semiconductor film from which impurities including hydrogen atoms are removed and including a region containing oxygen at an amount exceeding that in the stoichiometric composition ratio. The transistor including the oxide semiconductor film is a transistor having high reliability in which the amount of change in threshold voltage of the transistor by the bias-temperature stress (BT test) can be reduced.

摘要翻译： 在制造包括氧化物半导体层的晶体管的方法中，形成栅电极，然后将氧化铝膜，氧化硅膜和氧化物半导体膜依次形成在直列式装置中而不暴露于空气中 并对在线装置进行加热和氧气添加处理。 然后，晶体管被另一个氧化铝膜覆盖，并进行热处理，从而除去包括氢原子的杂质的氧化物半导体膜，并且包括含有超过化学计量组成比的氧的区域。 包括氧化物半导体膜的晶体管是具有高可靠性的晶体管，其中通过偏置温度应力（BT测试）可以减小晶体管的阈值电压的变化量。

公开(公告)号：US20120248470A1

公开(公告)日：2012-10-04

申请号：US13486017

申请日：2012-06-01

申请人： Shunpei YAMAZAKI ,  Satoshi MURAKAMI ,  Motomu KURATA ,  Hiroyuki HATA ,  Mitsuhiro ICHIJO ,  Takashi OHTSUKI ,  Aya ANZAI ,  Masayuki SAKAKURA

发明人： Shunpei YAMAZAKI ,  Satoshi MURAKAMI ,  Motomu KURATA ,  Hiroyuki HATA ,  Mitsuhiro ICHIJO ,  Takashi OHTSUKI ,  Aya ANZAI ,  Masayuki SAKAKURA

IPC分类号： H01L33/08

CPC分类号： H04N5/655 ,  G06F3/02 ,  H01L27/12 ,  H01L27/1214 ,  H01L27/1222 ,  H01L27/124 ,  H01L27/1248 ,  H01L27/3244 ,  H01L27/3258 ,  H01L27/3276 ,  H01L33/60 ,  H01L51/0005 ,  H01L51/5246 ,  H01L51/56 ,  H01L2224/4847 ,  H01L2227/323 ,  H01L2251/5323 ,  H04N5/642

摘要： The present invention provides a method for manufacturing a highly reliable display device at a low cost with high yield. According to the present invention, a step due to an opening in a contact is covered with an insulating layer to reduce the step, and is processed into a gentle shape. A wiring or the like is formed to be in contact with the insulating layer and thus the coverage of the wiring or the like is enhanced. In addition, deterioration of a light-emitting element due to contaminants such as water can be prevented by sealing a layer including an organic material that has water permeability in a display device with a sealing material. Since the sealing material is formed in a portion of a driver circuit region in the display device, the frame margin of the display device can be narrowed.

摘要翻译： 本发明提供了一种以高成本低成本制造高度可靠的显示装置的方法。 根据本发明，由绝缘层覆盖由于接触开口而产生的台阶，以减小台阶，并且被加工成平缓的形状。 布线等形成为与绝缘层接触，从而增强布线等的覆盖。 此外，通过用包封材料密封包括显示装置中具有透水性的有机材料的层，可以防止由诸如水等污染物引起的发光元件的劣化。 由于密封材料形成在显示装置的驱动电路区域的一部分中，所以显示装置的边框可以变窄。