公开(公告)号：US06235163B1

公开(公告)日：2001-05-22

申请号：US09350556

申请日：1999-07-09

申请人： Darryl Angelo ,  Arvind Sundarrajan ,  Peijun Ding ,  James H. Tsung ,  Ilyoung R. Hong ,  Barry Chin

发明人： Darryl Angelo ,  Arvind Sundarrajan ,  Peijun Ding ,  James H. Tsung ,  Ilyoung R. Hong ,  Barry Chin

IPC分类号： C23C1434

CPC分类号： H01J37/321 ,  H01J37/32724 ,  H01J37/34

摘要： An improved system for performing plasma enhanced PVD of copper, aluminum, tungsten or other metallic material is disclosed. The system has markedly improved performance in the critical area of unwanted in-film particle deposits. The improved performance is provided by lowering the operating temperature of the RF coil used in the plasma enhanced PVD system and by carefully smoothing the outer surface of the RF coil. High conductivity material in the coil supports, increased contact area between the coil supports and the RF coil, and the use of active cooling of the coil further enhance the performance of the system.

摘要翻译： 公开了一种用于执行铜，铝，钨或其它金属材料的等离子体增强PVD的改进的系统。 该系统在不需要的膜内颗粒沉积的关键区域显着改善了性能。 通过降低等离子体增强PVD系统中使用的RF线圈的工作温度以及仔细地平滑RF线圈的外表面来提供改进的性能。 线圈支架中的高导电性材料，线圈支架与RF线圈之间的接触面积增加，线圈主动冷却的使用进一步增强了系统的性能。

公开(公告)号：US06184137B2

公开(公告)日：2001-02-06

申请号：US09199965

申请日：1998-11-25

申请人： Peijun Ding ,  Imran Hashim ,  Barry L. Chin

发明人： Peijun Ding ,  Imran Hashim ,  Barry L. Chin

IPC分类号： H01L21302

CPC分类号： H01L21/76877 ,  H01L23/53233 ,  H01L23/53238 ,  H01L2924/0002 ,  H01L2924/00

摘要： We have discovered that complete copper filling of semiconductor features such as trenches and vias, without the formation of trapped voids, can be accomplished using a copper reflow process when the unfilled portion of the feature structure prior to reflow comprises a capillary within the feature, wherein the volume of the capillary represents between about 20% and about 90%, preferably between about 20% and about 75% of the original feature volume prior to filling with copper. The aspect ratio of the capillary is preferably at least 1.5. The maximum opening dimension of the capillary is less than about 0.8 &mgr;m. The preferred substrate temperature during the reflow process includes it either a soak at an individual temperature or a temperature ramp-up or ramp-down where the substrate experiences a temperature within a range from about 300° C. to about 600° C., more preferably between about 300° C. and about 450° C. By controlling the percentage of the volume of the feature which is unfilled at the time of the reflow process and taking advantage of the surface tension and capillary action when the aspect ratio of the feature is at least 1.5, the copper fill material is easily pulled into the feature which comprises the capillary without the formation of voids along the walls of the feature. The preferred method of application of the last layer of copper prior to reflow (the layer of copper which produces the unfilled capillary within the feature) is electroplating, although CVD or evaporation or other conformal layer formation techniques may be used.

摘要翻译： 我们已经发现，当回流焊之前的特征结构的未填充部分包括该特征内的毛细管时，可以使用铜回流工艺来实现半导体特征如沟槽和通孔的完全铜填充，例如沟槽和通孔，而不形成截留的空隙，其中 在填充铜之前，毛细管的体积代表原始特征体积的约20％至约90％，优选约20％至约75％。 毛细管的纵横比优选为1.5以上。 毛细管的最大开口尺寸小于约0.8μm。 在回流工艺期间优选的衬底温度包括其在单独温度下浸泡或温度升高或斜坡下降，其中衬底经历在约300℃至约600℃的温度范围内的温度，更多 优选在约300℃至约450℃之间。通过控制在回流过程时未填充的特征的体积百分比，并利用特征的纵横比来利用表面张力和毛细作用 至少为1.5，铜填充材料容易地被拉入包括毛细管的特征，而不沿着特征的壁形成空隙。 在回流之前施加最后一层铜的优选方法（在特征内产生未填充的毛细管的铜层）是电镀，尽管可以使用CVD或蒸发或其它共形层形成技术。

公开(公告)号：US6149776A

公开(公告)日：2000-11-21

申请号：US191253

申请日：1998-11-12

申请人： Howard Tang ,  Imran Hashim ,  Richard Hong ,  Peijun Ding

发明人： Howard Tang ,  Imran Hashim ,  Richard Hong ,  Peijun Ding

IPC分类号： C23C14/34 ,  H01J37/34

CPC分类号： H01J37/3435 ,  C23C14/3407

摘要： The present invention generally provides an apparatus and a method for physical vapor deposition of a metal onto a substrate comprising a physical vapor deposition chamber and a target disposed in an upper portion of the chamber. The target comprises a backing plate having a central portion and a flange portion attachable to the physical vapor deposition chamber, a sputterable portion extending from the central portion of the backing plate, and an annular ridge disposed on a surface of the flange portion. Preferably, the sputterable portion of the target includes a restriction side wall that restricts entry of plasma and back-scattered particles into the dark space gap between an upper shield and the target.

摘要翻译： 本发明通常提供一种将金属物理气相沉积到衬底上的装置和方法，该衬底包括物理气相沉积室和设置在腔室上部的靶。 目标包括具有中心部分和可连接到物理气相沉积室的凸缘部分的背板，从背板的中心部分延伸的可溅射部分和设置在凸缘部分的表面上的环形凸脊。 优选地，靶的可溅射部分包括限制侧壁，其限制等离子体和背散射粒子进入上屏蔽和靶之间的暗空间间隙。

公开(公告)号：US6077404A

公开(公告)日：2000-06-20

申请号：US24530

申请日：1998-02-17

申请人： Hougong Wang ,  Steve Lai ,  Gongda Yao ,  Peijun Ding

发明人： Hougong Wang ,  Steve Lai ,  Gongda Yao ,  Peijun Ding

IPC分类号： H01L21/3205 ,  C23C16/44 ,  H01L21/768 ,  C23C14/34

CPC分类号： H01L21/76877 ,  C23C16/4404 ,  Y10T24/44017

摘要： A method and apparatus for reflowing a material layer is provided. The inventive method introduces into a reflow chamber a material which is at least as reactive or more reactive than a material to be reflowed (i.e., a gettering material). Preferably the gettering material is sputter deposited within the reflow chamber while a shield prevents the gettering material from reaching the material layer to be reflowed. The shield may be coupled to, or integral with a clamp for clamping a wafer (containing the material layer to be reflowed) to a wafer support provided sufficient venting exists so that contaminants degassed from the wafer may flow to the region between the sputtering target and the shield where the contaminants can react with gettering material. The shield may have a roughened top surface (the surface that faces the sputtering target) which deters gettering material from flaking off the shield and/or the shield may have a reflective bottom surface (the surface that faces the wafer) that reflects heat to the wafer.

摘要翻译： 提供了用于回流材料层的方法和装置。 本发明的方法将至少与被回流的材料（即吸气材料）反应性或反应性至少反应的材料引入回流室。 优选地，吸气材料被溅射沉积在回流室内，而屏蔽件防止吸气材料到达要回流的材料层。 屏蔽可以耦合到或与夹具一体地夹持晶片（包含待回流的材料层）到晶片支架，提供足够的通风，使得从晶片脱气的污染物可以流到溅射靶和溅射靶之间的区域 污染物可与吸气材料反应的护罩。 屏蔽可以具有粗糙的顶表面（面向溅射靶的表面），其阻止吸气材料从屏蔽层剥离和/或屏蔽件可以具有反射底部表面（面向晶片的表面），其将热量反射到 晶圆。

公开(公告)号：US5736021A

公开(公告)日：1998-04-07

申请号：US677760

申请日：1996-07-10

申请人： Peijun Ding ,  Zheng Xu ,  Jianming Fu

发明人： Peijun Ding ,  Zheng Xu ,  Jianming Fu

IPC分类号： C23C14/34 ,  H01J37/32 ,  H01L21/203 ,  H01L21/205 ,  H01L21/285 ,  H01L21/302 ,  H01L21/3065

CPC分类号： H01J37/32504 ,  H01J37/32633

摘要： In a plasma reactor, especially one intended for physical vapor deposition (PVD) onto semiconductor substrates, a shield disposed in front of the chamber walls between the PVD target and the substrates to protect the chamber walls. According to the invention, the shield is left electrically floating so that electrically charged ions and electrons emanating from the plasma or target and impinging upon the shield charge it to the point that the electrical flux is repelled.

摘要翻译： 在等离子体反应器中，特别是用于物理气相沉积（PVD）到半导体衬底上的等离子体反应器，设置在PVD靶和衬底之间的室壁前面的屏蔽件，以保护室壁。 根据本发明，屏蔽电子悬空，使得从等离子体或目标物发射并与屏蔽电荷碰撞的带电荷的离子和电子充电到电流被排斥的点。

公开(公告)号：US09537032B2

公开(公告)日：2017-01-03

申请号：US12476991

申请日：2009-06-02

申请人： Jiunn Benjamin Heng ,  Chentao Yu ,  Zheng Xu ,  Jianming Fu ,  Peijun Ding

发明人： Jiunn Benjamin Heng ,  Chentao Yu ,  Zheng Xu ,  Jianming Fu ,  Peijun Ding

IPC分类号： H01L31/048 ,  H01L31/0352 ,  H01L31/0745 ,  H01L31/18 ,  H01L31/0236 ,  H01L31/05 ,  H01L31/0747

CPC分类号： H01L31/0747 ,  H01L31/02167 ,  H01L31/02363 ,  H01L31/03529 ,  H01L31/048 ,  H01L31/0488 ,  H01L31/0508 ,  H01L31/0725 ,  H01L31/0745 ,  H01L31/1804 ,  H01L31/1896 ,  Y02E10/547 ,  Y02P70/521

摘要： One embodiment of the present invention provides a double-sided heterojunction solar cell module. The solar cell includes a frontside glass cover, a backside glass cover situated below the frontside glass cover, and a number of solar cells situated between the frontside glass cover and the backside glass cover. Each solar cell includes a semiconductor multilayer structure situated below the frontside glass cover, including: a frontside electrode grid, a first layer of heavily doped amorphous Si (a-Si) situated below the frontside electrode, a layer of lightly doped crystalline-Si (c-Si) situated below the first layer of heavily doped a-Si, and a layer of heavily doped c-Si situated below the lightly doped c-Si layer. The solar cell also includes a second layer of heavily doped a-Si situated below the multilayer structure; and a backside electrode situated below the second layer of heavily doped a-Si.

摘要翻译： 本发明的一个实施例提供了一种双面异质结太阳能电池模块。 太阳能电池包括前侧玻璃罩，位于前侧玻璃罩下方的背面玻璃罩以及位于前侧玻璃罩和后侧玻璃罩之间的多个太阳能电池。 每个太阳能电池包括位于前侧玻璃盖下方的半导体多层结构，包括：前侧电极栅格，位于前侧电极下方的第一层重掺杂非晶Si（a-Si），轻掺杂晶体Si c-Si），以及位于轻掺杂的c-Si层下方的重掺杂c-Si层。 太阳能电池还包括位于多层结构下方的第二层重掺杂a-Si层; 以及位于重掺杂a-Si的第二层下方的背面电极。

公开(公告)号：US08668816B2

公开(公告)日：2014-03-11

申请号：US11933157

申请日：2007-10-31

申请人： Peijun Ding ,  Rong Tao ,  Zheng Xu ,  Daniel C. Lubben ,  Suraj Rengarajan ,  Michael A. Miller ,  Arvind Sundarrajan ,  Xianmin Tang ,  John C. Forster ,  Jianming Fu ,  Roderick C. Mosely ,  Fusen Chen ,  Praburam Gopalraja

发明人： Peijun Ding ,  Rong Tao ,  Zheng Xu ,  Daniel C. Lubben ,  Suraj Rengarajan ,  Michael A. Miller ,  Arvind Sundarrajan ,  Xianmin Tang ,  John C. Forster ,  Jianming Fu ,  Roderick C. Mosely ,  Fusen Chen ,  Praburam Gopalraja

IPC分类号： C23C14/35

CPC分类号： C23C14/046 ,  C23C14/345 ,  C23C14/3457 ,  C23C14/35 ,  C23C14/358 ,  C23C14/564 ,  C23C14/568 ,  H01J37/321 ,  H01J37/3402 ,  H01J37/3408 ,  H01J37/3441 ,  H01J2237/3327 ,  H01L21/2855 ,  H01L21/76805 ,  H01L21/76814 ,  H01L21/76843 ,  H01L21/76844 ,  H01L21/76846 ,  H01L21/76862 ,  H01L21/76865 ,  H01L21/76868 ,  H01L21/76871 ,  H01L21/76873 ,  H01L21/76876 ,  H01L21/76877 ,  H01L2221/1089

摘要： A magnetron sputter reactor for sputtering deposition materials such as tantalum, tantalum nitride and copper, for example, and its method of use, in which self-ionized plasma (SIP) sputtering and inductively coupled plasma (ICP) sputtering are promoted, either together or alternately, in the same or different chambers. Also, bottom coverage may be thinned or eliminated by ICP resputtering in one chamber and SIP in another. SIP is promoted by a small magnetron having poles of unequal magnetic strength and a high power applied to the target during sputtering. ICP is provided by one or more RF coils which inductively couple RF energy into a plasma. The combined SIP-ICP layers can act as a liner or barrier or seed or nucleation layer for hole. In addition, an RF coil may be sputtered to provide protective material during ICP resputtering. In another chamber an array of auxiliary magnets positioned along sidewalls of a magnetron sputter reactor on a side towards the wafer from the target. The magnetron preferably is a small, strong one having a stronger outer pole of a first magnetic polarity surrounding a weaker outer pole of a second magnetic polarity and rotates about the central axis of the chamber. The auxiliary magnets preferably have the first magnetic polarity to draw the unbalanced magnetic field component toward the wafer. The auxiliary magnets may be either permanent magnets or electromagnets.

摘要翻译： 用于溅射诸如钽，氮化钽和铜的沉积材料的磁控溅射反应器及其使用方法，其中促进了自离子等离子体（SIP）溅射和电感耦合等离子体（ICP）溅射，其一起或者 交替地，在相同或不同的室中。 此外，底部覆盖可以通过在一个室中的ICP再溅射和另一个室中的SIP来减薄或消除。 SIP由在溅射期间施加到靶的不均匀磁强度和高功率的磁极的小磁控管促进。 ICP由一个或多个将RF能量感应耦合到等离子体中的RF线圈提供。 组合的SIP-ICP层可以作为孔的衬垫或屏障或种子或成核层。 此外，可以在ICP溅射期间溅射RF线圈以提供保护材料。 在另一个腔室中，辅助磁体阵列沿磁控溅射反应器的侧壁朝着晶片从目标侧面定位。 磁控管优选地是小而强的，具有围绕第二磁极性较弱的外极的第一磁极的更强的外极并围绕腔的中心轴旋转。 辅助磁体优选地具有第一磁极以将不平衡的磁场分量拉向晶片。 辅助磁体可以是永磁体或电磁体。

公开(公告)号：US08637761B2

公开(公告)日：2014-01-28

申请号：US12343116

申请日：2008-12-23

申请人： Jianming Fu ,  Zheng Xu ,  Peijun Ding ,  Chentao Yu ,  Guanghua Song ,  Jianjun Liang

发明人： Jianming Fu ,  Zheng Xu ,  Peijun Ding ,  Chentao Yu ,  Guanghua Song ,  Jianjun Liang

IPC分类号： H01L31/00 ,  C30B15/00

CPC分类号： H01L31/1804 ,  H01L21/3221 ,  H01L31/068 ,  Y02E10/547 ,  Y02P70/521

摘要： One embodiment of the present invention provides a method for fabricating a solar cell. The method includes: melting a metallurgical-grade (MG) Si feedstock, lowering a single-crystalline Si seed to touch the surface of the molten MG-Si, slowly pulling out a single-crystal Si ingot of the molten MG-Si, processing the Si ingot into single crystal Si wafers to form MG-Si substrates for subsequent epitaxial growth, leaching out residual metal impurities in the MG-Si substrate, epitaxially growing a layer of single-crystal Si thin film doped with boron on the MG-Si substrate, doping phosphor to the single-crystal Si thin film to form an emitter layer, depositing an anti-reflection layer on top of the single-crystal Si thin film, and forming the front and the back electrical contacts.

摘要翻译： 本发明的一个实施例提供一种制造太阳能电池的方法。 该方法包括：熔化冶金级（MG）Si原料，降低单晶Si种子以接触熔融的MG-Si的表面，缓慢拉出熔融的MG-Si的单晶Si锭，加工 Si晶锭形成单晶Si晶片以形成用于随后的外延生长的MG-Si衬底，浸出MG-Si衬底中的残余金属杂质，在MG-Si上外延生长掺杂有硼的单晶Si薄膜层 衬底，掺杂磷光体到单晶Si薄膜以形成发射极层，在单晶Si薄膜的顶部沉积抗反射层，并形成前后电接触。

公开(公告)号：US20110256716A1

公开(公告)日：2011-10-20

申请号：US13068821

申请日：2011-05-20

申请人： Tony Chiang ,  Gongda Yao ,  Peijun Ding ,  Fusen E. Chen ,  Barry L. Chin ,  Gene Y. Kohara ,  Zheng Xu ,  Hong Zhang

发明人： Tony Chiang ,  Gongda Yao ,  Peijun Ding ,  Fusen E. Chen ,  Barry L. Chin ,  Gene Y. Kohara ,  Zheng Xu ,  Hong Zhang

IPC分类号： H01L21/768

CPC分类号： H01L21/76843 ,  C23C14/046 ,  C23C14/165 ,  H01L21/2855 ,  H01L21/76805 ,  H01L21/76844 ,  H01L21/76846 ,  H01L21/76862 ,  H01L21/76865 ,  H01L21/76871 ,  H01L21/76877 ,  H01L21/76879 ,  H01L21/76883

摘要： A method of depositing a metal seed layer with underlying barrier layer on a wafer substrate comprising a plurality of recessed device features. A first portion of the barrier layer is deposited on the wafer substrate without excessive build-up of barrier layer material on the openings to the plurality of recessed device features, while obtaining bottom coverage without substantial sputtering of the bottom surface. Subsequently, a metal seed layer is deposited using the same techniques used to deposit the barrier layer, to avoid excessive build up of metal seed layer material on the openings to the features, with minimal sputtering of the barrier layer surface.

摘要翻译： 一种在晶片衬底上沉积具有下层阻挡层的金属种子层的方法，包括多个凹陷的器件特征。 阻挡层的第一部分沉积在晶片衬底上，而不会在与多个凹陷器件特征的开口上过多地形成阻挡层材料，同时获得底部覆盖而无需基本上溅射底部表面。 随后，使用与沉积阻挡层相同的技术沉积金属种子层，以避免金属种子层材料在具有特征的开口上的过度积累，同时阻挡层表面的溅射最少。

公开(公告)号：US20100300507A1

公开(公告)日：2010-12-02

申请号：US12566459

申请日：2009-09-24

申请人： Jiunn Benjamin Heng ,  Chentao Yu ,  Zheng Xu ,  Jianming Fu ,  Peijun Ding

发明人： Jiunn Benjamin Heng ,  Chentao Yu ,  Zheng Xu ,  Jianming Fu ,  Peijun Ding

IPC分类号： H01L31/042 ,  H01L31/00 ,  H01L21/20 ,  H01L31/18

CPC分类号： H01L31/1804 ,  B32B17/10036 ,  H01L31/02363 ,  H01L31/048 ,  H01L31/0516 ,  H01L31/0684 ,  H01L31/0747 ,  H01L31/1892 ,  Y02E10/547 ,  Y02P70/521

摘要： One embodiment of the present invention provides a double-sided heterojunction solar cell module. The solar cell includes a frontside glass cover, a backside cover situated below the frontside glass cover, and a number of solar cells situated between the frontside glass cover and the backside glass cover. Each solar cell includes a semiconductor multilayer structure situated below the frontside glass cover, including: a frontside electrode grid, a first layer of heavily doped amorphous Si (a-Si) situated below the frontside electrode, a layer of lightly doped crystalline-Si (c-Si) situated below the first layer of heavily doped a-Si, and a layer of heavily doped c-Si situated below the lightly doped c-Si layer. The solar cell also includes a second layer of heavily doped a-Si situated below the multilayer structure; and a backside electrode situated below the second layer of heavily doped a-Si.

摘要翻译： 本发明的一个实施例提供了一种双面异质结太阳能电池模块。 太阳能电池包括前侧玻璃盖，位于前侧玻璃盖下方的背面盖以及位于前侧玻璃罩和后侧玻璃罩之间的若干太阳能电池。 每个太阳能电池包括位于前侧玻璃盖下方的半导体多层结构，包括：前侧电极栅格，位于前侧电极下方的重掺杂非晶Si（a-Si）第一层，轻掺杂晶体Si层 c-Si），以及位于轻掺杂的c-Si层下方的重掺杂c-Si层。 太阳能电池还包括位于多层结构下方的第二层重掺杂a-Si层; 以及位于重掺杂a-Si的第二层下方的背面电极。