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110 条记录 (耗时 0.022 秒)

    SMART IN-SITU CHAMBER CLEAN
    97.
    发明申请
    SMART IN-SITU CHAMBER CLEAN 审中-公开

    公开(公告)号：US20170133284A1

    公开(公告)日：2017-05-11

    申请号：US14934113

    申请日：2015-11-05

    申请人： Texas Instruments Incorporated

    发明人： John Christopher Shriner

    IPC分类号： H01L21/66

    CPC分类号： H01J37/32862 ,  H01J37/32935 ,  H01J37/32963 ,  H01J37/32972 ,  H01J37/32981

    摘要： A microelectronic device is formed using a fabrication tool such as a plasma thin film deposition tool or a plasma etch tool. A smart in-situ chamber clean begins with an initial plasma. A first physical signal is measured while the initial plasma is in progress, and the measured value is stored in a memory unit. A process controller retrieves the measured value, uses it to compute a deposition estimate parameter, and determines when the deposition estimate parameter meets a minimum deposition criterion. When the result of the determination is TRUE, the smart in-situ chamber clean terminates without an in-situ cleaning of the process chamber. When the result of the determination is FALSE, the smart in-situ chamber clean proceeds with an in-situ cleaning. The in-situ cleaning may be a continuation of the initial plasma. Subsequently, the microelectronic device is processed in the fabrication tool.

    Plasma etching systems and methods using empirical mode decomposition
    99.
    发明授权
    Plasma etching systems and methods using empirical mode decomposition 有权
    等离子体蚀刻系统和使用经验模式分解的方法

    公开(公告)号：US09548189B2

    公开(公告)日：2017-01-17

    申请号：US14694356

    申请日：2015-04-23

    申请人： Lam Research Corporation

    发明人： Luc Albarede ,  Yassine Kabouzi ,  Jorge Luque ,  Andrew D. Bailey, III

    IPC分类号： H01J37/32

    CPC分类号： H01J37/32963 ,  H01J37/32082 ,  H01J37/321 ,  H01J37/32449 ,  H01J37/32972 ,  H01J37/32981 ,  H01J37/3299 ,  H01J2237/334

    摘要： A substrate etching system includes an etching control module, a filtering module, and an endpoint module. The etching control module selectively begins plasma etching of a substrate within an etching chamber. The filtering module, during the plasma etching of the substrate: receives a signal including endpoint information; decomposes the signal using empirical mode decomposition (EMD); and generates a filtered signal based on results of the EMD. The endpoint module indicates when an endpoint of the plasma etching of the substrate has been reached based on the filtered signal. The etching control module ends the plasma etching of the substrate in response to the indication that the endpoint of the plasma etching of the substrate has been reached.

    摘要翻译： 衬底蚀刻系统包括蚀刻控制模块，过滤模块和端点模块。 蚀刻控制模块选择性地开始蚀刻室内的衬底的等离子体蚀刻。 过滤模块在衬底的等离子体蚀刻期间：接收包括端点信息的信号; 使用经验模式分解（EMD）分解信号; 并根据EMD的结果生成滤波信号。 端点模块基于滤波信号指示何时已经到达基板的等离子体蚀刻的端点。 响应于已经达到衬底的等离子体蚀刻的终点的指示，蚀刻控制模块结束衬底的等离子体蚀刻。

    METHOD AND DEVICE FOR PRODUCING NANOTIPS
    100.
    发明申请
    METHOD AND DEVICE FOR PRODUCING NANOTIPS 有权
    用于生产纳米粒子的方法和装置

    公开(公告)号：US20160186333A1

    公开(公告)日：2016-06-30

    申请号：US14897769

    申请日：2014-06-13

    申请人： IHP GMBH-INNOVATIONS FOR HIGH PERFORMANCE MICROELECTRONICS LEIBNIZ-INSTITUT FÜR INNOVATIVE M

    发明人： Wolfgang Mehr ,  Andre Wolff

    IPC分类号： C23F4/00 ,  H01L21/308 ,  C23C16/50 ,  H01L21/3065

    CPC分类号： C23F4/00 ,  B81C1/00111 ,  C23C16/50 ,  H01J1/3044 ,  H01J9/025 ,  H01J37/073 ,  H01J37/32963 ,  H01J37/32981 ,  H01J2201/30411 ,  H01J2209/0226 ,  H01J2237/334 ,  H01L21/3065 ,  H01L21/3081

    摘要： A method for producing a nanotip from a tip material provides a substrate which consists of the tip material or has the material in the form of a coating, produces a mask from a mask material selected so that, in a predefined reactive ion etching process, the mask material is removed at a lower etching rate than the tip material, and carries out the reactive ion etching process in an etching chamber. The mask material is additionally selected so that a gaseous component is released therefrom during the reactive ion etching process, the gaseous component not being released from the tip material. The method further comprises detecting the gaseous component while the ion etching process is being carried out, repeatedly determining whether an amount of the gaseous component in the etching chamber reaches a predefined lower threshold, and stopping the reactive ion etching process when the lower threshold is reached.

    摘要翻译： 从尖端材料制造纳米尖端的方法提供了由尖端材料组成或具有涂层形式的材料的衬底，从被选择的掩模材料产生掩模，使得在预定义的反应离子蚀刻工艺中， 掩模材料以比尖端材料更低的蚀刻速率被去除，并且在蚀刻室中进行反应离子蚀刻工艺。 附加地选择掩模材料，使得在反应离子蚀刻工艺期间气态组分从其中释放，气体组分不从顶端材料释放。 该方法还包括在进行离子蚀刻处理时检测气体成分，重复地确定蚀刻室中的气体成分的量是否达到预定的下限，并且当达到下限阈值时停止反应离子蚀刻处理 。