Magnetron sputter etching system
    93.
    发明授权
    Magnetron sputter etching system 失效
    磁控溅射蚀刻系统

    公开(公告)号:US4552639A

    公开(公告)日:1985-11-12

    申请号:US712452

    申请日:1985-03-13

    CPC classification number: H01J37/3455 H01J37/3408

    Abstract: A planar magnetron etching device having a movable magnetic source which is moved with respect to a substrate to cause lines magnetic flux parallel to the surface of the substrate to sweep above the surface of the substrate during the etching process.

    Abstract translation: 一种平面磁控管蚀刻装置,其具有相对于基板移动的可移动磁源,以使得在蚀刻过程中平行于基板的表面的线磁通量在基板的表面上方扫过。

    Tilted magnetron in a PVD sputtering deposition chamber

    公开(公告)号:US11784032B2

    公开(公告)日:2023-10-10

    申请号:US17285074

    申请日:2018-11-14

    CPC classification number: H01J37/3455 C23C14/35 H01J37/3408 H01J2237/332

    Abstract: A chamber includes a target (16) and a magnetron (50) disposed over the target (16). The magnetron (50) includes a plurality of magnets (52, 54). The magnetron (50) has a longitudinal dimension and a lateral dimension. The longitudinal dimension of the magnetron (50) is tilted with respect to the target (16) so the distances between magnets (52, 54) and the target (16) vary. As the magnetron (50) rotates during operation, the strength of the magnetic field produced by the magnetron (50) is an average of the various strengths of magnetic fields produced by the magnets (52, 54). The averaging of the strengths of the magnetic fields leads to uniform film properties and uniform target erosion.

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