公开(公告)号：US20080224180A1

公开(公告)日：2008-09-18

申请号：US12048557

申请日：2008-03-14

Applicant: Fumito NARIYUKI

Inventor： Fumito NARIYUKI

IPC: H01L31/032

CPC classification number: H01L31/0376 ,  H01L27/14676 ,  Y02E10/50

Abstract: A radiation detecting system includes at least a carrier collective electrode layer, a radiation-sensitive semiconductor layer, at least one charge transfer layer, and a voltage applying electrode formed on an insulating substrate and wherein at least one of the charge transfer layers includes chalcogenide compounds containing therein chalcogenide elements larger than the stoichiometric value by not smaller than 3% of the stoichiometric value in a composition thereof.

Abstract translation: 放射线检测系统至少包括载流子集合电极层，辐射敏感半导体层，至少一个电荷转移层和形成在绝缘基板上的电压施加电极，并且其中至少一个电荷转移层包括硫族化合物 其中含有大于化学计量值的硫族化物元素不少于其组成中化学计量值的3％。

公开(公告)号：US06952022B2

公开(公告)日：2005-10-04

申请号：US10732320

申请日：2003-12-09

Applicant: Jin Jang ,  Ji Ho Hur ,  Hyun Chul Nam

Inventor： Jin Jang ,  Ji Ho Hur ,  Hyun Chul Nam

IPC: H01L29/786 ,  H01L27/146 ,  H01L31/0376 ,  H01L31/10 ,  H01L29/04

CPC classification number: H01L31/0376 ,  H01L27/14643 ,  H01L27/14658 ,  H01L27/14692 ,  Y02E10/50

Abstract: The present invention relates to an image sensor comprising an amorphous silicon thin-film transistor optical sensor which functions as an image sensor used for an X-ray photography device, a fingerprint recognition apparatus, a scanner, etc., and a method of manufacturing the image sensor. Since the thin-film transistor optical sensor according to the present invention has a high-resistance silicon region by disposing an offset region in a channel region, a dark leakage current of the optical sensor remains in a low level even under a high voltage. Therefore, it is possible to apply a high voltage to the thin-film transistor optical sensor according to the present invention so that the image senor can be sensitive to a weak light. In addition, since the storage capacitance in the image sensor is formed in a double structure, the image sensor has a high value of capacitance. Furthermore, since a lower common electrode is electrically connected to an upper common electrode, the image sensor has a stable structure.

Abstract translation: 本发明涉及一种图像传感器，包括用作用于X射线摄影装置的图像传感器，指纹识别装置，扫描仪等的非晶硅薄膜晶体管光学传感器及其制造方法 图像传感器。 由于根据本发明的薄膜晶体管光学传感器通过在沟道区域中设置偏移区域而具有高电阻硅区域，所以即使在高电压下，光学传感器的暗漏电流也保持在低电平。 因此，可以对根据本发明的薄膜晶体管光学传感器施加高电压，使得图像传感器可以对弱光敏感。 此外，由于图像传感器中的存储电容形成为双重结构，所以图像传感器具有高的电容值。 此外，由于下部公共电极与上部公共电极电连接，所以图像传感器具有稳定的结构。

公开(公告)号：US20050034665A1

公开(公告)日：2005-02-17

申请号：US10948342

申请日：2004-09-24

Applicant: Takaharu Kondo ,  Masafumi Sano ,  Koichi Matsuda ,  Makoto Higashikawa

Inventor： Takaharu Kondo ,  Masafumi Sano ,  Koichi Matsuda ,  Makoto Higashikawa

IPC: C23C16/24 ,  C23C16/509 ,  C23C16/54 ,  C30B25/10 ,  H01L21/205 ,  H01L31/0376 ,  H01L31/04 ,  H01L31/18 ,  C23C16/00

CPC classification number: C23C16/24 ,  C23C16/5096 ,  C23C16/545 ,  C30B25/105 ,  C30B29/06 ,  H01L21/0237 ,  H01L21/0245 ,  H01L21/02505 ,  H01L21/02532 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/0262 ,  H01L31/0376 ,  H01L31/1824 ,  Y02E10/545 ,  Y02P70/521

Abstract: A film, typically a silicon-based film, is formed on a substrate by means of a plasma CVD process using a high frequency wave in a condition where a resistance element made of a different material than that of the substrate is provided on the electric path between the substrate and the earth. The resultant film shows a high quality and an improved adhesion strength while it can be formed at a practically high rate.

Abstract translation: 通过使用高频波的等离子体CVD工艺在基板上形成膜，通常为硅基膜，在电路上设置由与基板不同的材料制成的电阻元件 在基底和地球之间。 所得到的膜可以以实际高的速率形成，并且显示出高质量和改善的粘合强度。

公开(公告)号：US20010023971A1

公开(公告)日：2001-09-27

申请号：US09793574

申请日：2001-02-27

Inventor： Takaharu Kondo ,  Masafumi Sano ,  Koichi Matsuda ,  Makoto Higashikawa

IPC: H01L021/20 ,  C30B001/00 ,  H01L021/36 ,  H01L021/44 ,  H01L031/20 ,  H01L029/04 ,  H01L031/00

CPC classification number: C23C16/24 ,  C23C16/5096 ,  C23C16/545 ,  C30B25/105 ,  C30B29/06 ,  H01L21/0237 ,  H01L21/0245 ,  H01L21/02505 ,  H01L21/02532 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/0262 ,  H01L31/0376 ,  H01L31/1824 ,  Y02E10/545 ,  Y02P70/521

Abstract: A film, typically a silicon-based film, is formed on a substrate by means of a plasma CVD process using a high frequency wave in a condition where a resistance element made of a different material than that of the substrate is provided on the electric path between the substrate and the earth. The resultant film shows a high quality and an improved adhesion strength while it can be formed at a practically high rate.

Abstract translation: 通过使用高频波的等离子体CVD工艺在基板上形成膜，通常为硅基膜，在电路上设置由与基板不同的材料制成的电阻元件 在基底和地球之间。 所得到的膜可以以实际高的速率形成，并且显示出高质量和改善的粘合强度。

公开(公告)号：US4464415A

公开(公告)日：1984-08-07

申请号：US353335

申请日：1982-03-01

Applicant: Shunpei Yamazaki

Inventor： Shunpei Yamazaki

IPC: H01L31/0376 ,  H01L31/20 ,  G03G5/082

CPC classification number: H01L31/0376 ,  H01L31/03762 ,  H01L31/202 ,  Y02E10/548 ,  Y02P70/521

Abstract: A semi-amporphous, photoelectric conversion semiconductor manufacturing method in which substrates are disposed in a reaction chamber having a gas inlet and a gas outlet and a gas mixture containing at least a semiconductor material gas which includes a dangling bond neutralizer and a carrier gas is introduced into the reaction chamber. An electromagnetic field is applied to the gas mixture to ionize it into a gas mixture plasma in the reaction chamber. The plasma is passed to the substrates where the semiconductor material doped with the neutralizer is deposited on each substrate. The semiconductor material deposited on each substrate becomes a semi-amporphous, photoelectric conversion semiconductor by holding the atmospheric pressure in the reaction chamber below 1 atm and maintaining the substrate at a temperature lower than the temperature at which the semiconductor material on the substrate becomes crystallized.

Abstract translation: 介绍了一种半淀积光电转换半导体制造方法，其中将基板设置在具有气体入口和气体出口的反应室中，以及至少含有包括悬挂键中和器和载气的半导体材料气体的气体混合物 进入反应室。 将电磁场施加到气体混合物以将其电离成反应室中的气体混合物等离子体。 将等离子体传递到其上掺杂有中和剂的半导体材料沉积在每个衬底上的衬底。 沉积在每个基板上的半导体材料通过将反应室中的大气压保持在1atm以下，并将基板保持在比基板上的半导体材料结晶的温度低的温度下，成为半淀积光电转换半导体。

公开(公告)号：US12100771B1

公开(公告)日：2024-09-24

申请号：US18332728

申请日：2023-06-10

Applicant: JINKO SOLAR (HAINING) CO., LTD. ,  ZHEJIANG JINKO SOLAR CO., LTD.

Inventor： Bike Zhang ,  Nannan Yang ,  Mengwei Xu ,  Jingsheng Jin

IPC: H01L31/02 ,  H01L31/0203 ,  H01L31/0352 ,  H01L31/0376 ,  H01L31/18

CPC classification number: H01L31/02008 ,  H01L31/0203 ,  H01L31/035209 ,  H01L31/1816 ,  H01L31/1868 ,  H01L31/0376

Abstract: The solar cell includes a substrate, a tunneling layer disposed on a first surface, and a first doped conductive layer disposed on a surface of the tunneling layer. The solar cell further includes a second doped conductive layer disposed on a surface of the first doped conductive layer, where the second doped conductive layer includes: multiple first portions and multiple second portions arranged alternately in a direction perpendicular to a predetermined direction and perpendicular to a thickness direction of the second doped conductive layer, each of the multiple first portions and the multiple second portions extends along the predetermined direction, a doping element concentration of the first doped conductive layer is lower than a doping element concentration of each of the multiple first portions, and the doping element concentration of each of the multiple first portions is lower than a doping element concentration of each of the multiple second portions.

公开(公告)号：US20240213259A1

公开(公告)日：2024-06-27

申请号：US18149062

申请日：2022-12-30

Applicant: SHENZHEN CHINA STAR OPTOELECTRONICS SEMICONDUCTOR DISPALY TECHNOLOGY CO., LTD

Inventor： Chuanbao Luo

IPC: H01L27/12 ,  H01L29/786 ,  H01L31/0376 ,  H01L31/113

CPC classification number: H01L27/1229 ,  H01L27/1225 ,  H01L27/124 ,  H01L27/127 ,  H01L29/78633 ,  H01L29/7869 ,  H01L31/0376 ,  H01L31/1136

Abstract: The present application provides a display panel and a display device. The display panel includes a substrate and a plurality of light-sensing units disposed on the substrate. The light-sensing unit includes a light-sensing transistor and a reading transistor connected in series. The light-sensing transistor includes a first active layer. The reading transistor includes a second active layer. A material of the first active layer and a material of the second active layer are both oxide semiconductors.

公开(公告)号：US20230307569A1

公开(公告)日：2023-09-28

申请号：US18327071

申请日：2023-06-01

Applicant: KOREA INSTITUTE OF INDUSTRIAL TECHNOLOGY

Inventor： Chae Hwan JEONG ,  Ki Seok JEON

IPC: H01L31/0749 ,  H01L31/0445 ,  H01L31/0224 ,  H01L31/0376 ,  H01L31/18

CPC classification number: H01L31/0749 ,  H01L31/0445 ,  H01L31/022466 ,  H01L31/0376 ,  H01L31/1868

Abstract: A method of manufacturing a carrier-selective contact junction silicon solar cell includes: preparing a conductive silicon substrate; forming a first passivation layer and a second passivation layer on and under the conductive silicon substrate, respectively; forming an electron-selective contact layer under the second passivation layer; forming a hole-selective contact layer on the first passivation layer; forming an upper transparent electrode on the hole-selective contact layer; forming an upper metal electrode on the upper transparent electrode; and forming a lower metal electrode under the electron-selective contact layer. In forming the hole-selective contact layer, a sandwich-structured multilayer film is formed by depositing a copper iodide thin film on a top surface and a bottom surface of an iodine thin film, and a single-film copper iodide thin film is formed by low-temperature annealing the sandwich-structured multilayer film.

公开(公告)号：US20230299220A1

公开(公告)日：2023-09-21

申请号：US18201492

申请日：2023-05-24

Applicant: SONY GROUP CORPORATION

Inventor： Hiroshi NAKANO ,  Toshiki MORIWAKI

IPC: H01L31/0376 ,  H01L27/146 ,  H01L31/032 ,  H01L31/102

CPC classification number: H01L31/0376 ,  H01L27/14647 ,  H01L31/032 ,  H01L31/102

Abstract: An imaging device includes a photoelectric conversion unit in which a first electrode, a photoelectric conversion layer, and a second electrode are stacked. A semiconductor material layer including an inorganic oxide semiconductor material having an amorphous structure at least in a portion is formed between the first electrode and the photoelectric conversion layer, and the formation energy of an inorganic oxide semiconductor material that has the same composition as the inorganic oxide semiconductor material having an amorphous structure and has a crystalline structure has a positive value.

公开(公告)号：US09972655B2

公开(公告)日：2018-05-15

申请号：US14483457

申请日：2014-09-11

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Yoshiyuki Kurokawa ,  Takayuki Ikeda

IPC: H01L27/146 ,  A61B6/00 ,  H01L27/12 ,  H01L31/0376 ,  H04N5/32 ,  H04N5/3745

CPC classification number: H01L27/14663 ,  A61B6/4208 ,  H01L27/1225 ,  H01L27/1255 ,  H01L27/14612 ,  H01L31/0376 ,  H04N5/32 ,  H04N5/3745

Abstract: An imaging device capable of obtaining image data with a small amount of X-ray irradiation is provided. The imaging device obtains an image using X-rays and includes a scintillator and a plurality of pixel circuits arranged in a matrix and overlapping with the scintillator. The use of a transistor with an extremely small off-state current in the pixel circuits enables leakage of electrical charges from a charge accumulation portion to be reduced as much as possible, and an accumulation operation to be performed substantially at the same time in all of the pixel circuits. The accumulation operation is synchronized with X-ray irradiation, so that the amount of X-ray irradiation can be reduced.