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    Optically pumped laser with an integrated optical pump
    91.
    发明授权
    Optically pumped laser with an integrated optical pump 有权
    带有集成光泵的光泵浦激光器

    公开(公告)号：US07826511B1

    公开(公告)日：2010-11-02

    申请号：US11090453

    申请日：2005-03-25

    Applicant: Daniel Yap ,  David Persechini ,  Authi Narayanan

    Inventor： Daniel Yap ,  David Persechini ,  Authi Narayanan

    IPC: H01S3/091

    CPC classification number: H01S5/041 ,  B82Y20/00 ,  H01S5/0224 ,  H01S5/026 ,  H01S5/028 ,  H01S5/0287 ,  H01S5/1032 ,  H01S5/141 ,  H01S5/22 ,  H01S5/3213 ,  H01S5/3235 ,  H01S5/34306 ,  H01S5/4043 ,  H01S5/4087

    Abstract: An apparatus and method for building an optically pumped laser integrated with an electrically driven pump laser is disclosed. The apparatus disclosed comprises an optically pumped laser containing an active layer and an optical pump laser containing an optical mode at least partially overlapping and propagating substantially parallel to optically pumped laser's active layer. The method discloses forming an optically pumped gain element containing an active layer, forming a pump laser containing an optical mode at least partially overlapping and propagating substantially parallel to optically pumped gain element's active layer.

    Abstract translation: 公开了一种用于构建与电驱动泵浦激光器集成的光泵浦激光器的装置和方法。 所公开的装置包括含有活性层和光泵浦激光器的光学泵浦激光器，其包含基本上平行于光泵浦激光器的活性层至少部分重叠和传播的光学模式。 该方法公开了形成包含有源层的光泵浦增益元件，形成包含基本上与光泵浦增益元件的有源层平行的至少部分重叠和传播的光学模式的泵浦激光器。

    Integrated semiconductor laser diode module and manufacturing method of the same
    92.
    发明授权
    Integrated semiconductor laser diode module and manufacturing method of the same 失效
    集成半导体激光二极管模块及其制造方法相同

    公开(公告)号：US07769069B2

    公开(公告)日：2010-08-03

    申请号：US11067472

    申请日：2005-02-28

    Applicant: Yasuhiko Nomura ,  Yasuyuki Bessho ,  Masayuki Hata ,  Tsutomu Yamaguchi

    Inventor： Yasuhiko Nomura ,  Yasuyuki Bessho ,  Masayuki Hata ,  Tsutomu Yamaguchi

    IPC: H01S5/00

    CPC classification number: B82Y20/00 ,  H01S5/0202 ,  H01S5/0224 ,  H01S5/02272 ,  H01S5/028 ,  H01S5/0287 ,  H01S5/1039 ,  H01S5/1082 ,  H01S5/2009 ,  H01S5/221 ,  H01S5/222 ,  H01S5/2231 ,  H01S5/34326 ,  H01S5/34333 ,  H01S5/3436 ,  H01S5/4043 ,  H01S5/4087

    Abstract: Improving the lifetime of an integrated semiconductor laser diode module into which a GaN semiconductor laser diode and a GaP semiconductor laser diode are integrated, and the lasing properties of the laser diodes. Prior to a joining step of an LD 1 wafer that is made of a nitride semiconductor structure formed on a GaN substrate and an LD 2 wafer that is made of an aluminum gallium indium phosphide semiconductor structure, a facet of a resonator of the nitride semiconductor structure is formed by etching. A facet of a resonator of the aluminum gallium indium phosphide semiconductor structure is formed, after the joining step, by cleaving. The wafers are joined so that the facets of the resonators of the nitride semiconductor structure and aluminum gallium indium phosphide semiconductor structure are out of alignment in a lengthwise direction of the resonators.

    Abstract translation: 整合半导体激光二极管和GaP半导体激光二极管的集成半导体激光二极管模块的寿命提高以及激光二极管的激光特性。 在由GaN衬底上形成的氮化物半导体结构和由铝镓铟磷化物半导体结构制成的LD 2晶片制成的LD 1晶片的接合步骤之前，氮化物半导体结构的谐振器的面 通过蚀刻形成。 在接合步骤之后，通过切割形成铝镓铟磷化物半导体结构的谐振器的一个面。 晶片被接合，使得氮化物半导体结构的谐振器的面和磷化铝镓磷化物半导体结构在谐振器的长度方向上不对准。

    METHOD FOR MANUFACTURING MULTIPLE-WAVELENGTH SEMICONDUCTOR LASER
    93.
    发明申请
    METHOD FOR MANUFACTURING MULTIPLE-WAVELENGTH SEMICONDUCTOR LASER 审中-公开
    制造多波长半导体激光器的方法

    公开(公告)号：US20100190282A1

    公开(公告)日：2010-07-29

    申请号：US12469755

    申请日：2009-05-21

    Applicant: Yasuaki Yoshida ,  Hitoshi Sakuma

    Inventor： Yasuaki Yoshida ,  Hitoshi Sakuma

    IPC: H01L21/00

    CPC classification number: H01S5/4043 ,  B82Y20/00 ,  H01S5/0202 ,  H01S5/02272 ,  H01S5/34313 ,  H01S5/34326 ,  H01S5/34333 ,  H01S5/4087 ,  H01S2304/04

    Abstract: A method for manufacturing a multiple-wavelength semiconductor laser comprises: forming a first bar having an array of first semiconductor chips, wherein at least two semiconductor lasers producing light of different wavelengths are monolithically formed; forming a second bar having an array of second semiconductor chips, wherein a semiconductor laser producing light having a different wavelength from the light produced by the semiconductor lasers of the first semiconductor chips is formed; forming a third bar by locating a laser-forming surface of said first bar facing a back surface of the second bar, and joining respective first semiconductor chips in the first bar to respective second semiconductor chips in the second bar; forming scribe lines by irradiating boundaries of the first semiconductor chips and boundaries of the second semiconductor chips with laser beams, and dividing the third bar along the scribe lines into respective chips.

    Abstract translation: 一种制造多波长半导体激光器的方法包括：形成具有第一半导体芯片阵列的第一条，其中产生不同波长的光的至少两个半导体激光器是单片形成的; 形成具有第二半导体芯片阵列的第二条形状，其中形成具有与由第一半导体芯片的半导体激光器产生的光不同波长的光的半导体激光器; 通过将所述第一杆的激光形成表面定位成朝向所述第二杆的后表面，并将所述第一杆中的相应的第一半导体芯片连接到所述第二杆中的相应的第二半导体芯片来形成第三棒; 通过用激光束照射第一半导体芯片的边界和第二半导体芯片的边界来形成划线，并且沿着划线将第三条线划分成各自的芯片。

    Method of Producing a Radiation-Emitting Component and Radiation-Emitting Component
    94.
    发明申请
    Method of Producing a Radiation-Emitting Component and Radiation-Emitting Component 有权
    产生辐射发射元件和辐射发射元件的方法

    公开(公告)号：US20100189153A1

    公开(公告)日：2010-07-29

    申请号：US12670984

    申请日：2008-08-18

    Applicant: Peter Brick

    Inventor： Peter Brick

    IPC: H01S5/10 ,  H01S5/00 ,  H01S5/20 ,  H01S5/22 ,  H01L21/20

    CPC classification number: H01S5/4043 ,  H01S5/0035 ,  H01S5/1064 ,  H01S5/2004 ,  H01S5/22 ,  H01S5/3095 ,  H01S2301/18 ,  H01S2301/206

    Abstract: A method of producing a radiation-emitting component is provided. A far field radiation pattern is predetermined. From the predetermined radiation pattern a refractive index profile for the radiation-emitting component is determined in a direction extending perpendicularly to a main emission direction of the component. A structure is determined for the component, such that the component includes the previously determined refractive index profile. The component is configured according to the previously determined structure.

    Abstract translation: 提供一种制造辐射发射部件的方法。 远场辐射图是预定的。 根据预定的辐射图，在垂直于部件的主发射方向延伸的方向上确定用于辐射发射部件的折射率分布。 确定组件的结构，使得该组件包括先前确定的折射率分布。 该组件根据先前确定的结构进行配置。

    Quantum Photonic Imagers and Methods of Fabrication Thereof
    96.
    发明申请
    Quantum Photonic Imagers and Methods of Fabrication Thereof 有权
    量子光子成像仪及其制作方法

    公开(公告)号：US20100066921A1

    公开(公告)日：2010-03-18

    申请号：US12561101

    申请日：2009-09-16

    Applicant: Hussein S. El-Ghoroury ,  Robert G.W. Brown ,  Dale A. McNeill ,  Huibert DenBoer ,  Andrew J. Lanzone

    Inventor： Hussein S. El-Ghoroury ,  Robert G.W. Brown ,  Dale A. McNeill ,  Huibert DenBoer ,  Andrew J. Lanzone

    IPC: H04N9/31

    CPC classification number: H01S5/4043 ,  B82Y20/00 ,  G09G3/2018 ,  G09G3/32 ,  G09G2300/0842 ,  G09G2310/0235 ,  G09G2340/06 ,  H01S5/02276 ,  H01S5/105 ,  H01S5/18 ,  H01S5/2009 ,  H01S5/3063 ,  H01S5/34326 ,  H01S5/34333 ,  H01S5/4093 ,  H04N9/3161

    Abstract: Emissive quantum photonic imagers comprised of a spatial array of digitally addressable multicolor pixels. Each pixel is a vertical stack of multiple semiconductor laser diodes, each of which can generate laser light of a different color. Within each multicolor pixel, the light generated from the stack of diodes is emitted perpendicular to the plane of the imager device via a plurality of vertical waveguides that are coupled to the optical confinement regions of each of the multiple laser diodes comprising the imager device. Each of the laser diodes comprising a single pixel is individually addressable, enabling each pixel to simultaneously emit any combination of the colors associated with the laser diodes at any required on/off duty cycle for each color. Each individual multicolor pixel can simultaneously emit the required colors and brightness values by controlling the on/off duty cycles of their respective laser diodes.

    Abstract translation: 发射量子光子成像器由数字可寻址多色像素的空间阵列组成。 每个像素是多个半导体激光二极管的垂直堆叠，每个半导体激光二极管可以产生不同颜色的激光。 在每个多色像素内，通过耦合到包括成像器装置的多个激光二极管中的每一个的光限制区域的多个垂直波导，从二极管堆产生的光被垂直于成像器装置的平面发射。 包括单个像素的每个激光二极管是可单独寻址的，使得每个像素可以在每个颜色的任何所需的开/关占空比下同时发射与激光二极管相关联的颜色的任何组合。 每个单色多色像素可以通过控制其各自的激光二极管的开/关占空比同时发出所需的颜色和亮度值。

    SEMICONDUCTOR LASER DEVICE AND MANUFACTURING METHOD THEREOF
    97.
    发明申请
    SEMICONDUCTOR LASER DEVICE AND MANUFACTURING METHOD THEREOF 失效
    半导体激光器件及其制造方法

    公开(公告)号：US20100034234A1

    公开(公告)日：2010-02-11

    申请号：US12511218

    申请日：2009-07-29

    Applicant: Masayuki HATA ,  Yasuhiko Nomura ,  Kyoji Inoshita

    Inventor： Masayuki HATA ,  Yasuhiko Nomura ,  Kyoji Inoshita

    IPC: H01S5/183 ,  H01L21/00

    CPC classification number: B82Y20/00 ,  H01L2224/32145 ,  H01L2224/48463 ,  H01L2224/73265 ,  H01S5/0202 ,  H01S5/02212 ,  H01S5/0224 ,  H01S5/02276 ,  H01S5/0425 ,  H01S5/22 ,  H01S5/2214 ,  H01S5/34313 ,  H01S5/34326 ,  H01S5/34333 ,  H01S5/4043 ,  H01S5/4087 ,  H01S2302/00

    Abstract: A first semiconductor laser element is formed on a surface of the first substrate and including a first active layer. A second semiconductor laser element is bonded to the first semiconductor laser element with a first insulating film interposed therebetween. A first electrode is connected to the first semiconductor laser element. A second electrode is arranged on the surface of the first semiconductor laser element with the first insulating film interposed therebetween and connected to the second semiconductor laser element. The first semiconductor laser element has an optical waveguide formed in a region where the second semiconductor laser element is not bonded while the first electrode is arranged on the region, and the second electrode is formed to extend from between the second semiconductor laser element and first insulating film toward the region.

    Abstract translation: 第一半导体激光元件形成在第一基板的表面上并且包括第一有源层。 第二半导体激光元件与第一半导体激光元件接合，其间插入有第一绝缘膜。 第一电极连接到第一半导体激光元件。 第二电极设置在第一半导体激光元件的表面上，第一绝缘膜插入其中并连接到第二半导体激光元件。 第一半导体激光元件具有在第一半导体激光元件与第一绝缘体之间形成第一电极而形成在第二半导体激光元件未被接合的区域的光波导， 电影向该地区。

    Semiconductor laser apparatus, method of manufacturing semiconductor laser apparatus, and optical pickup apparatus
    100.
    发明授权
    Semiconductor laser apparatus, method of manufacturing semiconductor laser apparatus, and optical pickup apparatus 失效
    半导体激光装置，半导体激光装置的制造方法以及光拾取装置

    公开(公告)号：US07486712B2

    公开(公告)日：2009-02-03

    申请号：US11390460

    申请日：2006-03-28

    Applicant: Masayuki Hata ,  Yasuyuki Bessho ,  Yasuhiko Nomura ,  Masayuki Shono ,  Kenji Nagatomi ,  Yoichi Tsuchiya

    Inventor： Masayuki Hata ,  Yasuyuki Bessho ,  Yasuhiko Nomura ,  Masayuki Shono ,  Kenji Nagatomi ,  Yoichi Tsuchiya

    IPC: H01S5/00

    CPC classification number: H01S5/4043 ,  H01L2224/48091 ,  H01S5/02212 ,  H01S5/02272 ,  H01S5/02276 ,  H01S5/4087 ,  H01L2924/00014

    Abstract: A monolithic red/infrared semiconductor laser device is joined to a blue-violet semiconductor laser device. The distance between a blue-violet emission point in the blue-violet semiconductor laser device and an infrared emission point in an infrared semiconductor laser device is significantly shorter than the distance between a red emission point in a red semiconductor laser device and the infrared emission point. A blue-violet laser beam, a red laser beam, and an infrared laser beam respectively emitted from the blue-violet emission point, the red emission point, and the infrared emission point are introduced into a photodetector after being incident on an optical disk by an optical system comprising a polarizing beam splitter, a collimator lens, a beam expander, a λ/4 plate, an objective lens, a cylindrical lens, and an optical axis correction element.

    Abstract translation: 单片红/红外半导体激光器件连接到蓝紫色半导体激光器件。 蓝紫色半导体激光装置中的蓝紫色发射点与红外线半导体激光装置的红外线发射点之间的距离明显短于红色半导体激光装置的红色发射点与红外线发射点 。 从蓝紫色发射点，红色发射点和红外线发射点分别发射的蓝紫色激光束，红色激光束和红外激光束被入射到光盘上之后被引入光电检测器 包括偏振分束器，准直透镜，光束扩展器，λ/ 4板，物镜，柱面透镜和光轴校正元件的光学系统。

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