公开(公告)号：US11994845B2

公开(公告)日：2024-05-28

申请号：US17367901

申请日：2021-07-06

Applicant: ASML NETHERLANDS B.V.

Inventor： Sarathi Roy ,  Edo Maria Hulsebos ,  Roy Werkman ,  Junru Ruan

IPC: G05B19/418 ,  G03F7/00 ,  G05B13/02 ,  G06N3/044

CPC classification number: G05B19/41875 ,  G03F7/70508 ,  G03F7/70525 ,  G05B13/027 ,  G05B19/41885 ,  G06N3/044 ,  G05B2219/33025 ,  G05B2219/45028 ,  G05B2219/45031

Abstract: A method for configuring a semiconductor manufacturing process, the method including: obtaining a first value of a first parameter based on measurements associated with a first operation of a process step in the semiconductor manufacturing process and a first sampling scheme; using a recurrent neural network to determine a predicted value of the first parameter based on the first value; and using the predicted value of the first parameter in configuring a subsequent operation of the process step in the semiconductor manufacturing process.

公开(公告)号：US20240160151A1

公开(公告)日：2024-05-16

申请号：US18280459

申请日：2022-03-04

Applicant: ASML NETHERLANDS B.V. ,  ASML HOLDING N. V.

Inventor： Willem Marie Julia Marcel COENE ,  Vasco Tomas TENNER ,  Hugo Augustinus Joseph CRAMER ,  Arie Jeffrrey DEN BOEF ,  Wouter Dick KOEK ,  Sergei SOKOLOV ,  Jeroen Johan Maarten VAN DE WIJDEVEN ,  Alexander Kenneth RAUB

IPC: G03H1/04 ,  G01N21/95 ,  G02B21/10 ,  G02B21/36 ,  G03H1/00 ,  G03H1/02 ,  G03H1/08

CPC classification number: G03H1/0486 ,  G01N21/9501 ,  G02B21/10 ,  G02B21/365 ,  G03H1/0866 ,  G03H2001/0038 ,  G03H2001/0044 ,  G03H2001/005 ,  G03H2001/0232 ,  G03H2001/0445 ,  G03H2001/0473 ,  G03H2210/62

Abstract: A method of correcting a holographic image, a processing device, a dark field digital holographic microscope, a metrology apparatus and an inspection apparatus. The method includes obtaining a holographic image; determining at least one attenuation function due to motion blur from the holographic image; and correcting the holographic image, or a portion thereof, using the at least one attenuation function.

公开(公告)号：US20240153732A1

公开(公告)日：2024-05-09

申请号：US18281272

申请日：2022-02-09

Applicant: ASML Netherlands B.V.

Inventor： Datong ZHANG ,  Chih-hung WANG ,  Oliver Desmond PATTERSON ,  Xiaohu TANG

IPC: H01J37/147 ,  H01J37/26

CPC classification number: H01J37/1474 ,  H01J37/263 ,  H01J37/265 ,  H01J2237/0048 ,  H01J2237/24592

Abstract: Apparatuses, systems, and methods for providing beams for using deflector control to control charging on a sample surface of charged particle beam systems. In some embodiments, a controller including circuitry configured to scan a plurality of nodes of the sample to charge the plurality of nodes; adjust a scan rate of a beam such that a quantity of charge deposited on each node of the plurality of nodes varies with respect to at least one other node; generate a plurality of images; and compare the plurality of images to enable detection of a defect associated with any of the plurality of nodes of the sample.

公开(公告)号：US11977336B2

公开(公告)日：2024-05-07

申请号：US17059771

申请日：2019-05-14

Applicant: ASML NETHERLANDS B.V.

Inventor： Jen-Shiang Wang ,  Qian Zhao ,  Yunbo Guo ,  Yen-Wen Lu ,  Mu Feng ,  Qiang Zhang

IPC: G03F7/00

CPC classification number: G03F7/705 ,  G03F7/70441 ,  G03F7/70625 ,  G03F7/70655 ,  G03F7/706837

Abstract: A method for improving a process model for a patterning process, the method including obtaining a) a measured contour from an image capture device, and b) a simulated contour generated from a simulation of the process model. The method also includes aligning the measured contour with the simulated contour by determining an offset between the measured contour and the simulated contour. The process model is calibrated to reduce a difference, computed based on the determined offset, between the simulated contour and the measured contour.

公开(公告)号：US11977334B2

公开(公告)日：2024-05-07

申请号：US18089940

申请日：2022-12-28

Applicant: ASML NETHERLANDS B.V.

Inventor： Duan-Fu Stephen Hsu ,  Christoph Rene Konrad Cebulla Hennerkes ,  Rafael C. Howell ,  Zhan Shi ,  Xiaoyang Jason Li ,  Frank Staals

IPC: G03F7/00

CPC classification number: G03F7/70266 ,  G03F7/705 ,  G03F7/7055

Abstract: A method for determining a wavefront parameter of a patterning process. The method includes obtaining a reference performance (e.g., a contour, EPE, CD) of a reference apparatus (e.g., a scanner), a lens model for a patterning apparatus configured to convert a wavefront parameter of a wavefront to actuator movement, and a lens fingerprint of a tuning apparatus (e.g., a to-be-matched scanner). Further, the method involves determining the wavefront parameter (e.g., a wavefront parameter such as tilt, offset, etc.) based on the lens fingerprint of the tuning apparatus, the lens model, and a cost function, wherein the cost function is a difference between the reference performance and a tuning apparatus performance.

公开(公告)号：US11977034B2

公开(公告)日：2024-05-07

申请号：US17194558

申请日：2021-03-08

Applicant: ASML Netherlands B.V.

Inventor： Wouter Lodewijk Elings ,  Franciscus Bernardus Maria Van Bilsen ,  Christianus Gerardus Maria De Mol ,  Everhardus Cornelis Mos ,  Hoite Pieter Theodoor Tolsma ,  Peter Ten Berge ,  Paul Jacques Van Wijnen ,  Leonardus Henricus Marie Verstappen ,  Gerald Dicker ,  Reiner Maria Jungblut ,  Chung-Hsun Li

IPC: G01B11/14 ,  G01B11/00 ,  G01B11/02 ,  G01B11/26 ,  G01N21/95 ,  G01N21/956 ,  G03F7/00 ,  G05B19/418 ,  H01L21/66

CPC classification number: G01N21/9501 ,  G01B11/002 ,  G01B11/02 ,  G01B11/14 ,  G01B11/26 ,  G01N21/956 ,  G01N21/95607 ,  G03F7/70508 ,  G03F7/70625 ,  G03F7/70633 ,  G05B19/41875 ,  H01L22/20 ,  G05B2219/37224 ,  Y02P90/02

Abstract: In the measurement of properties of a wafer substrate, such as Critical Dimension or overlay a sampling plan is produced defined for measuring a property of a substrate, wherein the sampling plan comprises a plurality of sub-sampling plans. The sampling plan may be constrained to a predetermined fixed number of measurement points and is used to control an inspection apparatus to perform a plurality of measurements of the property of a plurality of substrates using different sub-sampling plans for respective substrates, optionally, the results are stacked to at least partially recompose the measurement results according to the sample plan.

公开(公告)号：USRE49952E1

公开(公告)日：2024-04-30

申请号：US16838976

申请日：2020-04-02

Applicant: ASML Netherlands B.V.

Inventor： Vincent Sylvester Kuiper ,  Erwin Slot

IPC: H01J37/317 ,  H01J37/09 ,  H01J37/30

CPC classification number: H01J37/3177 ,  H01J37/09 ,  H01J37/3007 ,  H01J2237/0435 ,  H01J2237/0453 ,  H01J2237/3175 ,  H01J2237/31774

Abstract: A sub-beam aperture array for forming a plurality of sub-beams from one or more charged particle beams. The sub-beam aperture array comprises one or more beam areas, each beam area comprising a plurality of sub-beam apertures arranged in a non-regular hexagonal pattern, the sub-beam apertures arranged so that, when projected in a first direction onto a line parallel to a second direction, the sub-beam apertures are uniformly spaced along the line, and wherein the first direction is different from the second direction. The system further comprises a beamlet aperture array with a plurality of beamlet apertures arranged in one or more groups. The beamlet aperture array is arranged to receive the sub-beams and form a plurality of beamlets at the locations of the beamlet apertures of the beamlet array.

公开(公告)号：US11972922B2

公开(公告)日：2024-04-30

申请号：US18126322

申请日：2023-03-24

Applicant: ASML Netherlands B.V.

Inventor： Hermanus Adrianus Dillen ,  Wim Tjibbo Tel ,  Willem Louis Van Mierlo

IPC: H01J37/28 ,  H01J37/22

CPC classification number: H01J37/28 ,  H01J37/222 ,  H01J2237/2826

Abstract: A method for calibrating a scanning charged particle microscope, such as a scanning electron microscope (SEM), is provided. The method includes dividing a wafer into a plurality of regions; preparing, on each of the plurality of regions, a pattern including a first periodic structure interleaved with a second periodic structure, the first and second periodic structures having an induced offset; determining an actual pitch the first and second periodic structures and thereby determining actual induced offset on each of the plurality of regions; selecting a plurality of regions from among the plurality of regions; measuring, by the SEM, a pitch of first and second periodic structures on each of the plurality of regions; and performing linearity calibration on the SEM based on the determining and the measuring.

公开(公告)号：US11971663B2

公开(公告)日：2024-04-30

申请号：US17626852

申请日：2020-07-07

Applicant: ASML Netherlands B.V.

Inventor： Marinus Petrus Reijnders ,  Hendrik Sabert ,  Patrick Sebastian Uebel

IPC: G03F7/20 ,  G03F7/00

CPC classification number: G03F7/70616

Abstract: Provided are light sources and methods of controlling them, and devices and methods for use in measurement applications, particularly in metrology, for example in a lithographic apparatus. The methods and devices provide mechanisms for detection and/or correction of variations in the light source, in particular stochastic variations. Feedback or feedforward approaches can be used for the correction of the source and/or the metrology outputs. An exemplary method of controlling the spectral output of a light source which emits a time-varying spectrum of light includes the steps of: determining at least one characteristic of the spectrum of light emitted from the light source; and using said determined characteristic to control the spectral output.

公开(公告)号：US11971656B2

公开(公告)日：2024-04-30

申请号：US18120886

申请日：2023-03-13

Applicant: ASML NETHERLANDS B.V.

Inventor： Johan Hendrik Klootwijk ,  Wilhelmus Theodorus Anthonius Johannes Van Den Einden

IPC: G03F1/64 ,  G03F1/62 ,  G03F7/00 ,  G03F1/66

CPC classification number: G03F1/64 ,  G03F1/62 ,  G03F7/70808 ,  G03F7/70958 ,  G03F7/70983 ,  G03F1/66

Abstract: A method for manufacturing a membrane assembly for EUV lithography, the method including: providing a stack having a planar substrate and at least one membrane layer, wherein the planar substrate includes an inner region and a border region around the inner region; and selectively removing the inner region of the planar substrate. The membrane assembly includes: a membrane formed from the at least one membrane layer; and a border holding the membrane, the border formed from the border region of the planar substrate. The stack is provided with a mechanical protection material configured to mechanically protect the border region during the selectively removing the inner region of the planar substrate.