公开(公告)号：US07820985B2

公开(公告)日：2010-10-26

申请号：US12005991

申请日：2007-12-28

申请人： Atul Gupta ,  Joseph C. Olson

发明人： Atul Gupta ,  Joseph C. Olson

IPC分类号： G21K5/08 ,  G21K5/10

CPC分类号： G21K5/10 ,  H01L21/68764

摘要： The present invention comprises a method for high tilt angle implantation, with angular precision not previously achievable. An ion beam, having a width and height dimension, is made up of a number of individual beamlets. These beamlets typically display a higher degree of parallelism in one of these two dimensions. Thus, to minimize angular error, the workpiece is tilted about an axis substantially perpendicular to the dimension having the higher degree of parallelism. The workpiece is then implanted at a high tilt angle and rotated about a line orthogonal to the surface of the workpiece. This process can be repeated until the high tilt implantation has been performed in all required regions.

摘要翻译： 本发明包括一种用于高倾斜角度植入的方法，其角度精度以前不能实现。 具有宽度和高度尺寸的离子束由多个单独的子束组成。 这些子束通常在这两个维度之一中显示更高程度的平行度。 因此，为了最小化角度误差，工件围绕基本垂直于具有较高并行度的尺寸的轴线倾斜。 然后以高倾斜角植入工件，并围绕与工件表面正交的线旋转。 可以重复该过程，直到在所有所需区域中执行高倾斜植入。

公开(公告)号：US20100197125A1

公开(公告)日：2010-08-05

申请号：US12695729

申请日：2010-01-28

申请人： Russell J. Low ,  William Weaver ,  Nicholas P.T. Bateman ,  Atul Gupta

发明人： Russell J. Low ,  William Weaver ,  Nicholas P.T. Bateman ,  Atul Gupta

IPC分类号： H01L21/266 ,  H01J37/317 ,  B05C11/00

CPC分类号： H01L21/266 ,  H01J37/09 ,  H01J37/3171 ,  H01J2237/0458 ,  H01J2237/31711 ,  H01L31/1804 ,  Y02E10/547 ,  Y02P70/521

摘要： An improved technique for processing a substrate is disclosed. In one particular exemplary embodiment, the technique may be realized as a method for processing a substrate. The method may comprise ion implanting a substrate disposed downstream of the ion source with ions generated in an ion source; and disposing a first portion of a mask in front of the substrate to expose the first portion of the mask to the ions, the mask being supported by the first and second mask holders, the mask further comprising a second portion wound in the first mask holder.

摘要翻译： 公开了一种用于处理衬底的改进技术。 在一个特定的示例性实施例中，该技术可以被实现为用于处理衬底的方法。 该方法可以包括离子注入在离子源的下游设置的离子，其离子在离子源中产生; 以及将掩模的第一部分设置在所述基板的前面以将所述掩模的所述第一部分暴露于所述离子，所述掩模由所述第一和第二掩模保持器支撑，所述掩模还包括缠绕在所述第一掩模保持器中的第二部分 。

公开(公告)号：US07727866B2

公开(公告)日：2010-06-01

申请号：US12397634

申请日：2009-03-04

申请人： Nicholas Bateman ,  Atul Gupta ,  Paul Sullivan ,  Paul Murphy

发明人： Nicholas Bateman ,  Atul Gupta ,  Paul Sullivan ,  Paul Murphy

IPC分类号： H01L21/425

CPC分类号： H01L31/18 ,  H01J37/3171 ,  H01J37/32412 ,  H01J2237/0827 ,  H01J2237/202 ,  H01J2237/31711 ,  H01L21/26513 ,  H01L21/266 ,  H01L31/068 ,  H01L31/0682 ,  H01L31/1804 ,  Y02E10/547 ,  Y02P70/521

摘要： The manufacture of solar cells is simplified and cost reduced through by performing successive ion implants, without an intervening thermal cycle. In addition to reducing process time, the use of chained ion implantations may also improve the performance of the solar cell. In another embodiment, two different species are successively implanted without breaking vacuum. In another embodiment, the substrate is implanted, then flipped such that it can be and implanted on both sides before being annealed. In yet another embodiment, one or more different masks are applied and successive implantations are performed without breaking the vacuum condition, thereby reducing the process time.

摘要翻译： 太阳能电池的制造通过执行连续的离子注入而没有中间热循环而简化并降低成本。 除了缩短处理时间之外，使用链式离子注入也可以提高太阳能电池的性能。 在另一个实施方案中，连续地植入两种不同的物质而不破坏真空。 在另一个实施例中，植入衬底，然后翻转，使得其可以在被退火之前两面植入。 在另一个实施例中，施加一个或多个不同的掩模，并且在不破坏真空条件的情况下执行连续的注入，由此减少处理时间。

公开(公告)号：US20090227094A1

公开(公告)日：2009-09-10

申请号：US12397634

申请日：2009-03-04

申请人： Nicholas Bateman ,  Atul Gupta ,  Paul Sullivan ,  Paul Murphy

发明人： Nicholas Bateman ,  Atul Gupta ,  Paul Sullivan ,  Paul Murphy

IPC分类号： H01L21/266

CPC分类号： H01L31/18 ,  H01J37/3171 ,  H01J37/32412 ,  H01J2237/0827 ,  H01J2237/202 ,  H01J2237/31711 ,  H01L21/26513 ,  H01L21/266 ,  H01L31/068 ,  H01L31/0682 ,  H01L31/1804 ,  Y02E10/547 ,  Y02P70/521

摘要： The manufacture of solar cells is simplified and cost reduced through by performing successive ion implants, without an intervening thermal cycle. In addition to reducing process time, the use of chained ion implantations may also improve the performance of the solar cell. In another embodiment, two different species are successively implanted without breaking vacuum. In another embodiment, the substrate is implanted, then flipped such that it can be and implanted on both sides before being annealed. In yet another embodiment, one or more different masks are applied and successive implantations are performed without breaking the vacuum condition, thereby reducing the process time.

摘要翻译： 太阳能电池的制造通过执行连续的离子注入而没有中间热循环而简化并降低成本。 除了缩短处理时间之外，使用链式离子注入也可以提高太阳能电池的性能。 在另一个实施方案中，连续地植入两种不同的物质而不破坏真空。 在另一个实施例中，植入衬底，然后翻转，使得其可以在退火之前两面植入。 在另一个实施例中，施加一个或多个不同的掩模，并且在不破坏真空条件的情况下执行连续的注入，由此减少处理时间。

公开(公告)号：US20090104761A1

公开(公告)日：2009-04-23

申请号：US11875062

申请日：2007-10-19

申请人： Yongbae Jeon ,  Vikram Singh ,  Timothy Miller ,  Ziwei Fang ,  Steven Walther ,  Atul Gupta

发明人： Yongbae Jeon ,  Vikram Singh ,  Timothy Miller ,  Ziwei Fang ,  Steven Walther ,  Atul Gupta

IPC分类号： H01L21/26 ,  C23C16/513

CPC分类号： H01J37/32642 ,  H01J37/32412 ,  H01J37/32935

摘要： A method of plasma doping includes generating a plasma comprising dopant ions proximate to a platen supporting a substrate in a plasma chamber. The platen is biased with a bias voltage waveform having a negative potential that attracts ions in the plasma to the substrate for plasma doping. At least one sensor measuring data related to charging conditions favorable for forming an electrical discharge is monitored. At least one plasma process parameter is modified in response to the measured data, thereby reducing a probability of forming an electrical discharge.

摘要翻译： 等离子体掺杂的方法包括产生等离子体，该等离子体包括邻近于在等离子体室中支撑衬底的压板的掺杂剂离子。 压板被具有负电位的偏压电压波形偏置，其将等离子体中的离子吸引到用于等离子体掺杂的衬底。 监测至少一个测量与有利于形成放电的充电条件有关的数据的传感器。 响应于测量数据修改至少一个等离子体处理参数，从而降低形成放电的可能性。

公开(公告)号：US07453070B2

公开(公告)日：2008-11-18

申请号：US11477335

申请日：2006-06-29

申请人： Atul Gupta ,  Joseph C. Olson ,  Gregg A. Norris

发明人： Atul Gupta ,  Joseph C. Olson ,  Gregg A. Norris

IPC分类号： G01K1/08

CPC分类号： H01J37/3171 ,  G01J1/04 ,  G01J1/0437 ,  G01J1/0448 ,  G01J1/4257 ,  G01J2001/4261 ,  H01J37/244 ,  H01J2237/2446 ,  H01J2237/24507 ,  H01J2237/24542 ,  H01J2237/24578 ,  H01J2237/30472 ,  H01J2237/31703

摘要： A beam density measurement system includes a shield, a beam sensor, and an actuator. The beam sensor is positioned downstream from the shield in a direction of travel of a beam. The beam sensor is configured to sense an intensity of the beam, and the beam sensor has a long dimension and a short dimension. The actuator translates the shield relative to the beam sensor, wherein the shield blocks at least a portion of the beam from the beam sensor as the shield is translated relative to the beam sensor, and wherein measured values of the intensity associated with changes in a position of the shield relative to the beam sensor are representative of a beam density distribution of the beam in a first direction defined by the long dimension of the beam sensor.

公开(公告)号：US20080078952A1

公开(公告)日：2008-04-03

申请号：US11537033

申请日：2006-09-29

申请人： Atul GUPTA ,  Jonathan Gerald England

发明人： Atul GUPTA ,  Jonathan Gerald England

IPC分类号： H01J37/304 ,  H01J37/317

CPC分类号： H01J37/3171 ,  H01J37/304 ,  H01J2237/1501 ,  H01J2237/24528 ,  H01J2237/3045 ,  H01J2237/30483 ,  H01J2237/31703

摘要： A technique for improving ion implantation based on ion beam angle-related information is disclosed. In one particular exemplary embodiment, the technique may be realized as a method for improving ion implantation. The method may comprise obtaining angle-related information associated with an ion beam. The method may also comprise calculating, based on the angle-related information, an ion beam angle distribution over a wafer for one or more potential scanning modes. The method may further comprise selecting a desired scanning mode from the one or more potential scanning modes based on an evaluation of performance metric caused by the ion beam angle distribution.

摘要翻译： 公开了一种基于离子束角度相关信息改善离子注入的技术。 在一个特定的示例性实施例中，该技术可以被实现为用于改进离子注入的方法。 该方法可以包括获得与离子束相关联的角度相关信息。 该方法还可以包括基于角度相关信息计算一个或多个潜在扫描模式的晶片上的离子束角度分布。 该方法还可以包括基于由离子束角分布引起的性能度量的评估，从一个或多个潜在扫描模式中选择期望的扫描模式。

公开(公告)号：US07239017B1

公开(公告)日：2007-07-03

申请号：US10915117

申请日：2004-08-09

申请人： Yongsik Yu ,  Atul Gupta ,  Karen Billington ,  Michael Carris ,  William Crew ,  Thomas W. Mountsier

发明人： Yongsik Yu ,  Atul Gupta ,  Karen Billington ,  Michael Carris ,  William Crew ,  Thomas W. Mountsier

IPC分类号： H01L23/48

CPC分类号： H01L23/53295 ,  H01L21/76807 ,  H01L21/76829 ,  H01L2924/0002 ,  H01L2924/00

摘要： The present invention provides a low dielectric constant copper diffusion barrier film composed, at least in part, of boron-doped silicon carbide suitable for use in a semiconductor device and methods for fabricating such a film. The copper diffusion barrier maintains a stable dielectric constant of less than 4.5 in the presence of atmospheric moisture.

摘要翻译： 本发明提供一种低介电常数铜扩散阻挡膜，其至少部分由适用于半导体器件的硼掺杂碳化硅构成，以及制造这种膜的方法。 在大气湿度的存在下，铜扩散阻挡层保持稳定的介电常数小于4.5。

公开(公告)号：US20070084564A1

公开(公告)日：2007-04-19

申请号：US11163303

申请日：2005-10-13

申请人： Atul Gupta ,  Edmund Winder ,  Vikram Singh ,  Harold Persing

发明人： Atul Gupta ,  Edmund Winder ,  Vikram Singh ,  Harold Persing

IPC分类号： C23F1/00

CPC分类号： H01J37/321 ,  H01J37/32412 ,  H01L21/26513 ,  H01L21/26526 ,  H01L21/2658 ,  H01L21/26586 ,  H01L29/66803

摘要： A doping apparatus includes a chamber and a plasma source. The plasma source generates dopant ions from a feed gas and provides the dopant ions to the chamber. A platen is positioned in the chamber proximate to the plasma source. The platen supports a substrate having planar and nonplanar features. At least one of a pressure proximate to the substrate, a flow rate of the feed gas, a power of the plasma, and a voltage applied to the platen is chosen so that dopant ions are implanted into both the planar and non-planar nonplanar features surfaces of the substrate.

摘要翻译： 掺杂装置包括腔室和等离子体源。 等离子体源从进料气体产生掺杂剂离子，并将掺杂剂离子提供给室。 压板位于室中，靠近等离子体源。 压板支撑具有平面和非平面特征的衬底。 选择靠近衬底的压力，进料气体的流速，等离子体的功率和施加到压板的电压中的至少一个，使得掺杂剂离子注入平面和非平面非平面特征 基板的表面。

公开(公告)号：US20060208202A1

公开(公告)日：2006-09-21

申请号：US11145949

申请日：2005-06-07

申请人： Atul Gupta ,  Joseph Olson

发明人： Atul Gupta ,  Joseph Olson

IPC分类号： H01J37/302 ,  H01J37/317

CPC分类号： H01J37/304 ,  H01J37/1477 ,  H01J37/3171 ,  H01J2237/1507 ,  H01J2237/3045 ,  H01J2237/30455 ,  H01J2237/30472 ,  H01J2237/31703 ,  H01L21/26586

摘要： A technique for ion beam angle spread control is disclosed. In one particular exemplary embodiment, the technique may be realized as a method for ion beam angle spread control. The method may comprise directing one or more ion beams at a substrate surface at two or more different incident angles, thereby exposing the substrate surface to a controlled spread of ion beam incident angles.

摘要翻译： 公开了一种用于离子束角度扩展控制的技术。 在一个特定的示例性实施例中，该技术可以被实现为用于离子束角度扩展控制的方法。 该方法可以包括以两个或更多个不同的入射角度在衬底表面处引导一个或多个离子束，从而将衬底表面暴露于受控的离子束入射角扩散。