Semiconductor device and fabrication methods thereof
    104.
    发明申请
    Semiconductor device and fabrication methods thereof 有权
    半导体器件及其制造方法

    公开(公告)号:US20080286938A1

    公开(公告)日:2008-11-20

    申请号:US11798432

    申请日:2007-05-14

    IPC分类号: H01L21/30

    摘要: A method for packaging a semiconductor device disclosed. A substrate comprising a plurality of dies, separated by scribe line areas respectively is provided, wherein at least one layer is overlying the substrate. A portion of the layer within the scribe lines area is removed by photolithography and etching to form openings. The substrate is sawed along the scribe line areas, passing the openings. In alternative embodiment, a first substrate comprising a plurality of first dies separated by first scribe line areas respectively is provided, wherein at least one first structural layer is overlying the first substrate. The first structural layer is patterned to form first openings within the first scribe line areas. A second substrate comprising a plurality of second dies separated by second scribe line areas respectively is provided, wherein at least one second structural layer is overlying the substrate. The second structural layer is patterned to form second openings within the second scribe line areas. The first substrate and the second substrate are bonded to form a stack structure. The stack structure is cut along the first and second scribe line areas, passing the first and second openings.

    摘要翻译: 一种封装半导体器件的方法。 提供了包括分别由划线区域分隔的多个管芯的衬底,其中至少一层覆盖衬底。 通过光刻和蚀刻去除划线部分内的层的一部分以形成开口。 沿着划线区域锯切基板,通过开口。 在替代实施例中,提供了包括分别由第一划线区域分开的多个第一裸片的第一衬底,其中至少一个第一结构层覆盖在第一衬底上。 图案化第一结构层以在第一划线区域内形成第一开口。 提供了包括分别由第二划线区域分隔的多个第二模具的第二衬底,其中至少一个第二结构层覆盖在衬底上。 图案化第二结构层以在第二划线区域内形成第二开口。 第一基板和第二基板被接合以形成堆叠结构。 沿着第一和第二划线区域切割堆叠结构,使第一和第二开口通过。

    Wafer test method utilizing conductive interposer
    106.
    发明授权
    Wafer test method utilizing conductive interposer 有权
    使用导电插层的晶圆试验方法

    公开(公告)号:US07057405B2

    公开(公告)日:2006-06-06

    申请号:US10757241

    申请日:2004-01-14

    申请人: Han-Ping Pu

    发明人: Han-Ping Pu

    IPC分类号: G01R31/02

    CPC分类号: G01R31/2831

    摘要: A wafer test method is performed for a wafer prior to forming bumps on the wafer, using a conductive interposer having one side with test pads and the other side with test bumps electrically connected to the test pads. The conductive interposer is mounted on the wafer having a plurality of chips, wherein the test bumps are in electrical contact with bond pads on active surfaces of the chips. Test probes are used to contact the test pads to perform tests for the chips. This wafer test method is beneficially performed prior to forming bumps on the wafer, such that the prior-art drawback of damaging bumps on the wafer by contacting test probes with the bumps on the wafer can be eliminated, and the conductive interposer mounted on the wafer prevents the test probes from physical contact with the bond pads on the chips, thereby not damaging the bond pads.

    摘要翻译: 在晶片上形成凸块之前,使用具有一侧具有测试焊盘的导电插入件,另一侧具有电连接到测试焊盘的测试凸块,对晶片执行晶片测试方法。 导电插入件安装在具有多个芯片的晶片上,其中测试凸块与芯片的有效表面上的接合焊盘电接触。 测试探头用于与测试垫接触以对芯片进行测试。 在晶片上形成凸块之前有利地进行该晶片测试方法,从而可以消除通过使测试探针与晶片上的凸起接触而损坏晶片上的凸块的现有技术缺陷,并且安装在晶片上的导电插入器 防止测试探针与芯片上的接合焊盘物理接触,从而不损坏焊盘。

    Wafer test method
    108.
    发明申请
    Wafer test method 有权
    晶圆试验方法

    公开(公告)号:US20050007129A1

    公开(公告)日:2005-01-13

    申请号:US10757241

    申请日:2004-01-14

    申请人: Han-Ping Pu

    发明人: Han-Ping Pu

    IPC分类号: G01R31/28 G01R31/02

    CPC分类号: G01R31/2831

    摘要: A wafer test method is performed for a wafer prior to forming bumps on the wafer, using a conductive interposer having one side with test pads and the other side with test bumps electrically connected to the test pads. The conductive interposer is mounted on the wafer having a plurality of chips, wherein the test bumps are in electrical contact with bond pads on active surfaces of the chips. Test probes are used to contact the test pads to perform tests for the chips. This wafer test method is beneficially performed prior to forming bumps on the wafer, such that the prior-art drawback of damaging bumps on the wafer by contacting test probes with the bumps on the wafer can be eliminated, and the conductive interposer mounted on the wafer prevents the test probes from physical contact with the bond pads on the chips, thereby not damaging the bond pads.

    摘要翻译: 在晶片上形成凸块之前,使用具有一侧具有测试焊盘的导电插入件,另一侧具有电连接到测试焊盘的测试凸块,对晶片执行晶片测试方法。 导电插入件安装在具有多个芯片的晶片上,其中测试凸块与芯片的有效表面上的接合焊盘电接触。 测试探头用于与测试垫接触以对芯片进行测试。 在晶片上形成凸块之前有利地进行该晶片测试方法,从而可以消除通过使测试探针与晶片上的凸起接触而损坏晶片上的凸块的现有技术缺陷,并且安装在晶片上的导电插入器 防止测试探针与芯片上的接合焊盘物理接触,从而不损坏焊盘。

    Low-profile multi-chip module
    110.
    发明授权
    Low-profile multi-chip module 有权
    低调多芯片模块

    公开(公告)号:US06580618B2

    公开(公告)日:2003-06-17

    申请号:US09912276

    申请日:2001-07-24

    申请人: Han-Ping Pu

    发明人: Han-Ping Pu

    IPC分类号: H05K702

    摘要: A low-profile multi-chip module is provided, wherein two or more chips are integrated in a package unit connected to a printed circuit board (PCB), to provide a manifold level of functionality and data storage capacity. The multi-chip module includes at least a first chip and a second chip connected to a predetermined position on an active surface of the first chip by chip-on-chip technology, allowing the active surface of the first chip to be further mounted to a substrate by flip-chip technology. The substrate is attached to the PCB by surface-mount technology, and interposed between the first chip and the PCB. At least a passive component is mounted on the PCB at a position beside the substrate and underneath the second chip. This structure allows the use of a PCB having a smaller layout area for implementing the multi-chip module, thereby desirably reducing the overall structural profile.

    摘要翻译: 提供了一种低调多芯片模块,其中两个或更多个芯片集成在连接到印刷电路板(PCB)的封装单元中,以提供多功能级和数据存储容量。 多芯片模块包括至少第一芯片和第二芯片,其通过芯片上芯片技术连接到第一芯片的有源表面上的预定位置,从而允许第一芯片的有源表面进一步安装到 基板采用倒装芯片技术。 基板通过表面贴装技术连接到PCB,并插入在第一芯片和PCB之间。 至少一个无源元件安装在PCB上的位于基板旁边的第二芯片下方的位置。 该结构允许使用具有较小布局面积的PCB来实现多芯片模块,从而期望地减小整体结构轮廓。