公开(公告)号：US20120056305A1

公开(公告)日：2012-03-08

申请号：US12874362

申请日：2010-09-02

申请人： Chun-Tsung Kuo ,  Shih-Chang Liu ,  Chia-Shiung Tsai

发明人： Chun-Tsung Kuo ,  Shih-Chang Liu ,  Chia-Shiung Tsai

IPC分类号： H01L29/73 ,  H01L21/331

CPC分类号： H01L29/66242 ,  H01L29/0821 ,  H01L29/66287 ,  H01L29/66318 ,  H01L29/732 ,  H01L29/7371 ,  H01L29/7378

摘要： The present disclosure provides a bipolar junction transistor (BJT) device and methods for manufacturing the BJT device. In an embodiment, the BJT device includes: a semiconductor substrate having a collector region, and a material layer disposed over the semiconductor layer. The material layer has a trench therein that exposes a portion of the collector region. A base structure, spacers, and emitter structure are disposed within the trench of the material layer. Each spacer has a top width and a bottom width, the top width being substantially equal to the bottom width.

摘要翻译： 本公开提供了一种双极结型晶体管（BJT）器件和用于制造BJT器件的方法。 在一个实施例中，BJT器件包括：具有集电极区域和设置在半导体层上的材料层的半导体衬底。 材料层在其中具有暴露出集电极区域的一部分的沟槽。 基底结构，间隔物和发射体结构设置在材料层的沟槽内。 每个间隔物具有顶部宽度和底部宽度，顶部宽度基本上等于底部宽度。

公开(公告)号：US20120038015A1

公开(公告)日：2012-02-16

申请号：US12890913

申请日：2010-09-27

申请人： Chih-Hui Huang ,  Cheng-Yuan Tsai ,  Yeur-Luen Tu ,  Chia-Shiung Tsai ,  Dun-Nian Yaung ,  Jen-Cheng Liu

发明人： Chih-Hui Huang ,  Cheng-Yuan Tsai ,  Yeur-Luen Tu ,  Chia-Shiung Tsai ,  Dun-Nian Yaung ,  Jen-Cheng Liu

IPC分类号： H01L31/0216

CPC分类号： H01L27/1464 ,  H01L27/14625 ,  H01L27/14685

摘要： The present disclosure provides an image sensor device that exhibits improved quantum efficiency. For example, a backside illuminated (BSI) image sensor device is provided that includes a substrate having a front surface and a back surface; a light sensing region disposed at the front surface of the substrate; and an antireflective layer disposed over the back surface of the substrate. The antireflective layer has an index of refraction greater than or equal to about 2.2 and an extinction coefficient less than or equal to about 0.05 when measured at a wavelength less than 700 nm.

摘要翻译： 本公开提供了一种显示出提高的量子效率的图像传感器装置。 例如，提供了背面照明（BSI）图像传感器装置，其包括具有前表面和后表面的基板; 设置在所述基板的前表面的感光区域; 以及设置在基板的背面上的抗反射层。 当在小于700nm的波长下测量时，抗反射层的折射率大于或等于约2.2，消光系数小于或等于约0.05。

公开(公告)号：US20110266511A1

公开(公告)日：2011-11-03

申请号：US12770344

申请日：2010-04-29

申请人： Ming-Huei Shen ,  Shih-Chang Liu ,  Chia-Shiung Tsai

发明人： Ming-Huei Shen ,  Shih-Chang Liu ,  Chia-Shiung Tsai

IPC分类号： H01L45/00 ,  H01L21/20

CPC分类号： H01L45/06 ,  H01L45/1233 ,  H01L45/126 ,  H01L45/1293 ,  H01L45/144 ,  H01L45/16

摘要： A semiconductor device is provided which includes a bottom electrode contact formed on a substrate, and a dielectric layer formed on the bottom electrode contact. The device further includes a heating element formed in the dielectric layer, wherein the heating element is disposed between two air gaps separating the heating element from the dielectric layer, and a phase change element formed on the heating element, wherein the phase change element includes a substantially amorphous background and an active region, the active region capable of changing phase between amorphous and crystalline. A method of forming such a device is also provided.

摘要翻译： 提供一种半导体器件，其包括形成在衬底上的底部电极接触件和形成在底部电极接触件上的电介质层。 该装置还包括形成在电介质层中的加热元件，其中加热元件设置在将电加热元件与电介质层分开的两个气隙之间，以及形成在加热元件上的相变元件，其中相变元件包括 基本无定形背景和活性区域，该活性区域能够改变无定形和结晶之间的相。 还提供了一种形成这种装置的方法。

公开(公告)号：US20110143514A1

公开(公告)日：2011-06-16

申请号：US12754451

申请日：2010-04-05

申请人： Jhon Jhy Liaw ,  Yu-Jen Wang ,  Chia-Shiung Tsai

发明人： Jhon Jhy Liaw ,  Yu-Jen Wang ,  Chia-Shiung Tsai

IPC分类号： H01L21/28

CPC分类号： H01L43/12 ,  B82Y10/00 ,  G11C11/1655 ,  G11C11/1657 ,  G11C11/1659 ,  H01L27/228 ,  H01L43/08

摘要： Disclosed herein is an improved memory device, and related methods of manufacturing, wherein the area occupied by a conventional landing pad is significantly reduced to around 50% to 10% of the area occupied by conventional landing pads. This is accomplished by removing the landing pad from the cell structure, and instead forming a conductive via structure that provides the electrical connection from the memory stack or device in the structure to an under-metal layer. By forming only this via structure, rather than separate vias formed on either side of a landing pad, the overall width occupied by the connective via structure from the memory stack to an under-metal layer is substantially reduced, and thus the via structure and under-metal layer may be formed closer to the memory stack (or conductors associated with the stack) so as to reduce the overall width of the cell structure.

公开(公告)号：US20100151615A1

公开(公告)日：2010-06-17

申请号：US12710441

申请日：2010-02-23

申请人： Gwo-Yuh Shiau ,  Ming-Chyi Liu ,  Yuan-Chih Hsieh ,  Shih-Chi Fu ,  Chia-Shiung Tsai

发明人： Gwo-Yuh Shiau ,  Ming-Chyi Liu ,  Yuan-Chih Hsieh ,  Shih-Chi Fu ,  Chia-Shiung Tsai

IPC分类号： H01L31/18

CPC分类号： H01L27/14687 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/14634 ,  H01L27/14636 ,  H01L27/1464 ,  H01L27/14643 ,  H01L27/14831

摘要： Image sensor devices and methods for fabricating the same are provided. An exemplary embodiment of an image sensor device comprises a support substrate. A passivation structure is formed over the support substrate. An interconnect structure is formed over the passivation structure. A first semiconductor layer is formed over the interconnect structure, having a first and second surfaces, wherein the first and second surfaces are opposing surfaces. At least one light-sensing device is formed over/in the first semiconductor layer from a first surface thereof. A color filter layer is formed over the first semiconductor layer from a second surface thereof. At least one micro lens is formed over the color filter layer.

摘要翻译： 提供了图像传感器装置及其制造方法。 图像传感器装置的示例性实施例包括支撑衬底。 在支撑衬底上形成钝化结构。 在钝化结构上形成互连结构。 第一半导体层形成在互连结构上，具有第一和第二表面，其中第一和第二表面是相对的表面。 至少一个感光装置从其第一表面形成在第一半导体层之上/之中。 滤色器层从其第二表面形成在第一半导体层上。 在滤色器层上形成至少一个微透镜。

公开(公告)号：US07723128B2

公开(公告)日：2010-05-25

申请号：US12032973

申请日：2008-02-18

申请人： Yung-Hung Wang ,  Yu-Jen Wang ,  Mark Juang ,  Chia-Shiung Tsai

发明人： Yung-Hung Wang ,  Yu-Jen Wang ,  Mark Juang ,  Chia-Shiung Tsai

IPC分类号： H01L21/00

CPC分类号： H01L27/228 ,  G11C11/161 ,  G11C11/1657 ,  G11C11/1659 ,  H01L43/08 ,  H01L43/12

摘要： A method of forming an integrated circuit includes forming magnetic tunnel junction (MTJ) layers; etching the MTJ layers to form a MTJ cell; and forming a dielectric capping layer on sidewalls of the MTJ cell, wherein the step of forming the dielectric capping layer is in-situ performed with the step of etching the MTJ layers.

摘要翻译： 形成集成电路的方法包括形成磁隧道结（MTJ）层; 蚀刻MTJ层以形成MTJ电池; 以及在MTJ电池的侧壁上形成电介质覆盖层，其中形成电介质覆盖层的步骤是用蚀刻MTJ层的步骤进行的。

公开(公告)号：US07544982B2

公开(公告)日：2009-06-09

申请号：US11542064

申请日：2006-10-03

申请人： Chung-Yi Yu ,  Chia-Shiung Tsai ,  Shih-Chi Fu

发明人： Chung-Yi Yu ,  Chia-Shiung Tsai ,  Shih-Chi Fu

IPC分类号： H01L31/062

CPC分类号： H01L27/14627 ,  H01L27/14621 ,  H01L27/14632 ,  H01L27/14636 ,  H01L27/14685 ,  H01L27/14687

摘要： An image sensor device is provided. A substrate has a photosensor region formed therein and/or thereon. An interconnection structure is formed over the substrate, and includes metal lines formed in inter-metal dielectric (IMD) layers. At least one IMD-level micro-lens is/are formed in at least one of the IMD layers over the photosensor region. Preferably, barrier layers are located between the IMD layers. Preferably, each of the barrier layers at each level has a net thickness limited to 100 angstroms or less at locations over the photosensor region, except at locations where the IMD-level micro-lenses are located. The IMD-level micro-lenses and the etch stop layers preferably have a refractive index greater than that of the IMD layers. A cap layer is preferably formed on the metal lines, especially when the metal lines include copper. An upper-level micro-lens may be located on a level that is above the interconnection structure.

摘要翻译： 提供图像传感器装置。 衬底在其中和/或其上形成有光电传感器区域。 在衬底上形成互连结构，并且包括在金属间电介质（IMD）层中形成的金属线。 在光电传感器区域中的至少一个IMD层中形成至少一个IMD级微透镜。 优选地，阻挡层位于IMD层之间。 优选地，除了在IMD级微透镜所在的位置之外，每个级别的每个阻挡层的净厚度在光电传感器区域之外的位置处具有限制在100埃或更小的净厚度。 IMD级微透镜和蚀刻停止层优选具有大于IMD层的折射率的折射率。 优选在金属线上形成覆盖层，特别是当金属线包括铜时。 上级微透镜可以位于互连结构之上的层上。

公开(公告)号：US20090026432A1

公开(公告)日：2009-01-29

申请号：US11781728

申请日：2007-07-23

申请人： Shih-Chang Liu ,  Chia-Shiung Tsai

发明人： Shih-Chang Liu ,  Chia-Shiung Tsai

IPC分类号： H01L29/02 ,  H01L21/20

CPC分类号： H01L45/16 ,  H01L45/06 ,  H01L45/1233 ,  H01L45/126 ,  H01L45/144 ,  H01L45/148

摘要： A PCM (phase change memory) cell in a PCRAM (phase change random access memory) semiconductor device includes a phase change material subjacently contacted by a heater film. The phase change material is formed over a surface that is a generally planar surface with at least a downwardly extending recess. The phase change material fills the recess and contacts the upper edge of the heater film that forms the bottom of the recess. After a planar surface is initially formed, a selective etching process is used to recede the top edge of the heater film below the planar surface using a selective and isotropic etching process.

摘要翻译： PCRAM（相变随机存取存储器）半导体器件中的PCM（相变存储器）单元包括由加热膜隐藏接触的相变材料。 相变材料形成在具有至少一个向下延伸的凹部的大致平坦的表面的表面上。 相变材料填充凹部并接触形成凹部底部的加热器膜的上边缘。 在初始形成平坦表面之后，使用选择性蚀刻工艺来使用选择性和各向同性蚀刻工艺将加热器膜的顶部边缘退回到平坦表面下方。

公开(公告)号：US20090020842A1

公开(公告)日：2009-01-22

申请号：US11778183

申请日：2007-07-16

申请人： Gwo-Yuh Shiau ,  Chia-Shiung Tsai

发明人： Gwo-Yuh Shiau ,  Chia-Shiung Tsai

IPC分类号： H01L31/00

CPC分类号： H01L27/1463 ,  H01L21/76898 ,  H01L23/481 ,  H01L27/14636 ,  H01L27/1464 ,  H01L2224/04042 ,  H01L2924/13091 ,  H01L2924/00

摘要： The present disclosure provide a microelectronic device. The microelectronic device includes a sensing element formed in the semiconductor substrate; a trench isolation feature formed in the semiconductor substrate; a bonding pad formed at least partially in the trench isolation feature; and interconnect features formed over the sensing element and the trench isolation feature, being coupled to the sensing element and the bonding pad, and isolated from each other by interlayer dielectric.

摘要翻译： 本公开提供了一种微电子器件。 微电子器件包括形成在半导体衬底中的感测元件; 形成在半导体衬底中的沟槽隔离特征; 至少部分地形成在所述沟槽隔离特征中的接合焊盘; 以及形成在感测元件上的互连特征和沟槽隔离特征，耦合到感测元件和接合焊盘，并且通过层间电介质彼此隔离。

公开(公告)号：US20080188055A1

公开(公告)日：2008-08-07

申请号：US11586528

申请日：2006-10-26

申请人： Yu-Jen Wang ,  Chia-Shiung Tsai ,  Yeur-Luen Tu ,  Lan-Lin Chao ,  Chih-Ta Wu ,  Hsing-Lien Lin ,  Chung Chien Wang

发明人： Yu-Jen Wang ,  Chia-Shiung Tsai ,  Yeur-Luen Tu ,  Lan-Lin Chao ,  Chih-Ta Wu ,  Hsing-Lien Lin ,  Chung Chien Wang

IPC分类号： H01L21/02

CPC分类号： H01L28/60 ,  H01L21/321

摘要： A method of manufacturing a semiconductor device includes forming a metal-insulator-metal (MIM) device having a metal organic chemical vapor deposited (MOCVD) lower electrode and an atomic layer deposited (ALD) upper electrode.

摘要翻译： 一种制造半导体器件的方法包括形成具有金属有机化学气相沉积（MOCVD）下电极和原子层沉积（ALD）上电极的金属 - 绝缘体 - 金属（MIM）器件。