Abstract:
In image capturing processor in one embodiment comprises: an image capturing section including an image sensor that captures a polarization image of an object being illuminated with an illuminating light beam; and an image processing section. The image processing section has: a light intensity image generator which generates a light intensity image based on the output of the image sensor; a polarization degree image generator which generates a polarization degree image by calculating the degree of polarization on a pixel-by-pixel basis; a retouching section which generates a retouched polarization image by enhancing the degree of polarization of the polarization degree image at depressions on a micro-geometric surface of the object and by correcting at least one of its hue, saturation and value; and an image synthesizing section which synthesizes the retouched polarization image and the light intensity image together.
Abstract:
An optical connector includes a circuit board, at least one light emitter, at least one light receiver, a shell, and at least two enhancing pins. The circuit board includes a mounting surface. The at least one light emitter and at least one light receiver are mounted on the mounting surface. The shell covers the at least one light emitter and the at least one light receiver. The at least two enhancing pins passes through the shell and are received in the circuit board to fix the shell on the mounting surface.
Abstract:
A detector structure having a sensor for detecting energy impinging on the structure in the infrared and/or optical frequency band; an electronics section disposed behind the sensor for processing electrical signal produced by the sensor in response to the sensor detecting the infrared and/or optical energy; and an electrically conductive layer for inhibiting electromagnetic energy outside of the visible and infrared portions of the spectrum, such electrically conductive layer being disposed between impinging energy and the electronics section, such layer having a transmissivity greater than 90 percent in the visible and infrared portions of the spectrum and being reflective and/or dissipative to portions of the impinging energy outside of the visible and infrared portions of the spectrum. In one embodiment an electrically conductive layer having a substantially constant absorptivity to electromagnetic energy within the visible and infrared portions of the spectrum. In one embodiment, the layer is graphene.
Abstract:
A reflection sensing system comprising a body, an illuming module and a detecting module. The body is made of LCP. The illuming module includes a first accommodating space and an LED, and the detecting module includes a light detector. The first accommodating space is disposed in the body and has a first opening at one end. In the first accommodating space, the neighboring region relative to the first opening is parabolic or approximately parabolic. At an end at an inner side of the first accommodating space near the light detector, at least one cross-section near the first opening is not parabolic or approximately parabolic. The LED is disposed at the focus of the first accommodating space and aligned towards the first opening. The light detector of the detecting module is disposed in the body and generates a sensing signal after receiving light.
Abstract:
A plurality of transistors in which ratios of a channel length L to a channel width W, α=W/L, are different from each other is provided in parallel as output side transistors 105a to 105c in a current mirror circuit 101 which amplifies a photocurrent of a photoelectric conversion device and an internal resistor is connected to each of the output side transistors 105a to 105c in series. The sum of currents which flow through the plurality of transistors and the internal resistor is output, whereby a transistor with large amount of α can be driven in a linear range with low illuminance, and a transistor with small amount of α can be driven in a linear range with high illuminance, so that applicable illuminance range of the photoelectric conversion device can be widened.
Abstract translation:在通过放大光电流的电流镜电路101中,作为输出侧晶体管105a〜105c并联设置多个晶体管,其中沟道长度L与沟道宽度W,α= W / L的比例彼此不同 的一个光电转换装置和一个内部电阻器串联连接到每个输出侧晶体管105a至105c。 输出流过多个晶体管的电流和内部电阻器的总和,由此可以以低照度在线性范围内驱动具有大量α的晶体管,并且可以在a中驱动具有少量α的晶体管 具有高照度的线性范围,可以扩大光电转换装置的适用照度范围。
Abstract:
A light sensor device comprises a substrate (10) having a well (12) defined in one surface. At least one light sensor (14) is formed at the base of the well (12), and an optical light guide (18) in the form of a transparent tunnel (18) within an opaque body (20) extends from a top surface of the device down a sloped side wall of the well (12) to the location of the light sensor (14).
Abstract:
In a visible-light blocking member, an infrared sensor including the visible-light blocking member, and a liquid crystal display including the infrared sensor, a visible-light blocking member is a structure including amorphous germanium or a compound of amorphous germanium and has higher transmittance for a wavelength of an infrared ray region than for a wavelength of a visible light region. Accordingly, sensitivity to infrared rays may be increased by applying the visible-light blocking member to the infrared sensor.
Abstract:
An ultrasensitive optical detector with high resolution in time, using a waveguide, and a processes for manufacturing this detector. The detector is configured to detect at least one photon and includes a dielectric substrate and at least one detection element on the substrate, configured to generate an electrical signal starting from energy of the photon received, and a guide element to guide the photon, the energy of which is then absorbed by the detection element at an absorption zone which is less than 100 nm thick. The detection element is substantially straight on the substrate and is short, and the guide element includes a single mode light waveguide with strong confinement, placed on the detection element. The detector is particularly applicable to detection and localization of operating defects in a semiconducting circuit.
Abstract:
A high time-resolution ultrasensitive optical detector, using a planar waveguide leakage mode, and methods for making the detector. The detector includes a stacking with a dielectric substrate, a detection element, first and second dielectric layers, and a dielectric superstrate configured to send photon(s) into the light guide formed by the first layer. The thicknesses of the layers is chosen to enable a resonant coupling between the photon(s) and a leakage mode of the guide, the stacking having an absorption resonance linked to the leakage mode for a given polarization of the photon(s).
Abstract:
A microlens structure that includes a wedge formed to support and tilt the microlens is disclosed. The wedge results from heating a layer of patterned flowable material. The degree and direction of incline given to the wedge can be controlled in part by the type of patterning that is performed.