公开(公告)号：US3930241A

公开(公告)日：1975-12-30

申请号：US51832974

申请日：1974-10-29

申请人： IBM

发明人： GUARNIERI C RICHARD ,  LEE KENNETH ,  ONTON AARE

IPC分类号： G11C11/14 ,  G11C19/08 ,  H01F10/00 ,  H01F10/12 ,  H01F10/13 ,  H01F10/16 ,  H01F41/14

CPC分类号： G11C19/08 ,  H01F10/00 ,  H01F10/16

摘要： A film of magnetic amorphous material capable of supporting bubble domains containing a region therein having a canted direction of magnetic uniaxial anisotropy is described. An example is a magnetic amorphous film having bubble domains therein in which the magnetic uniaxial anisotropy is canted at an angle of 5* from a line perpendicular to the plane of the film. Another example is a film of magnetic amorphous material containing one layer having the magnetic uniaxial anisotropy canted in one direction and a second layer having the magnetic uniaxial anisotropy canted in another direction.

摘要翻译： 描述能够支撑含有其中具有磁性单轴各向异性倾斜方向的区域的气泡域的磁性无定形材料的膜。 一个例子是具有气泡区域的磁性非晶膜，其中磁性单轴各向异性以垂直于膜平面的线倾斜5度。 另一个例子是含有一个方向的磁性单轴各向异性的一层的磁性无定形材料的膜，另一方向具有磁性单轴各向异性的第二层。

公开(公告)号：US3615911A

公开(公告)日：1971-10-26

申请号：US3615911D

申请日：1969-05-16

申请人： BELL TELEPHONE LABOR INC

发明人： NESBITT ETHAN A ,  SCAFF JACK H ,  THEUERER HENRY C

IPC分类号： C22C9/00 ,  C22C9/06 ,  C22C19/00 ,  C22C28/00 ,  C23C14/14 ,  C23C14/34 ,  H01F1/055 ,  H01F10/10 ,  H01F10/13 ,  H01F10/16 ,  H01F41/18 ,  H01F1/04

CPC分类号： C22C28/00 ,  C22C9/00 ,  C22C9/06 ,  C22C19/00 ,  C23C14/14 ,  C23C14/34 ,  H01F10/126

摘要： Sputtered films containing compositions exemplified by Co5Sm sometimes with nonmagnetic diluents such as Cu manifest magnetic properties similar to the best reported for the corresponding bulk compositions. Coercivities for the best films are generally superior to the bulk coercivities and, in some instances, may be as high as tens of thousands of oersteds.

公开(公告)号：US11561266B2

公开(公告)日：2023-01-24

申请号：US17465236

申请日：2021-09-02

申请人： SHOWA DENKO K.K.

发明人： Daizo Endo ,  Akira Sakawaki

IPC分类号： G01R33/00 ,  H01F10/13

摘要： Reduction of the S/N in an output from a magnetic sensor using the magnetic impedance effect is suppressed. A magnetic sensor 1 is provided with a sensitive element 31 including: plural soft magnetic material layers 105; and a nonmagnetic amorphous metal layer 106 provided between the plural soft magnetic material layers 105, wherein the soft magnetic material layers 105 facing each other with the nonmagnetic amorphous metal layer 106 interposed therebetween are antiferromagnetically coupled to sense a magnetic field by a magnetic impedance effect.

公开(公告)号：US11087912B2

公开(公告)日：2021-08-10

申请号：US15770288

申请日：2016-10-28

申请人： Amosense Co., Ltd.

发明人： Kil Jae Jang

IPC分类号： H01F10/20 ,  H05K9/00 ,  H01F10/13 ,  H02J50/12 ,  H02J50/70 ,  H02J7/02

摘要： There is provided a magnetic field shielding sheet for wireless power transmission. The present disclosure to provide a magnetic field shielding sheet for wireless power transmission that includes a first shielding sheet for shielding a magnetic field generated from a first wireless power transmission antenna operable in a magnetic induction method, a second shielding sheet for shielding a magnetic field generated from a second wireless power transmission antenna operable in a magnetic resonance method, and a third shielding sheet which is stacked on the same surface of the first shielding sheet and the second shielding sheet so as to cover the first shielding sheet and the second shielding sheet, for shielding the magnetic field generated from the second wireless power transmission antenna.

公开(公告)号：US10923652B2

公开(公告)日：2021-02-16

申请号：US16448709

申请日：2019-06-21

申请人： Applied Materials, Inc.

发明人： Lin Xue ,  Chando Park ,  Chi Hong Ching ,  Jaesoo Ahn ,  Mahendra Pakala

IPC分类号： H01L43/12 ,  H01L43/02 ,  G11C11/16 ,  C23C14/54 ,  H01F10/32 ,  H01L43/10 ,  H01F41/32 ,  C23C14/06 ,  H01L21/67 ,  H01F10/13

摘要： Embodiments of the disclosure provide methods and apparatus for fabricating magnetic tunnel junction (MTJ) structures on a substrate for MRAM applications. In one embodiment, a magnetic tunnel junction (MTJ) device structure includes a junction structure disposed on a substrate, the junction structure comprising a first ferromagnetic layer and a second ferromagnetic layer sandwiching a tunneling barrier layer, a dielectric capping layer disposed on the junction structure, a metal capping layer disposed on the junction structure, and a top buffer layer disposed on the metal capping layer.

公开(公告)号：US10770213B2

公开(公告)日：2020-09-08

申请号：US16409585

申请日：2019-05-10

申请人： IMEC vzw

发明人： Johan Swerts ,  Sebastien Couet

IPC分类号： G11B5/39 ,  H01F10/30 ,  H01F10/13 ,  H01F10/32 ,  H01F41/30 ,  H01F41/32 ,  H01L43/08 ,  H01L43/12 ,  H01L43/10 ,  B82Y10/00 ,  B82Y25/00 ,  H01L27/22

摘要： The disclosed technology generally relates to a magnetoresistive device and more particularly to a magnetoresistive device comprising chromium. According to an aspect, a method of forming a magnetoresistive device comprises forming a magnetic tunnel junction (MTJ) structure over a substrate. The MTJ structure includes, in a bottom-up direction away from the substrate, a free layer, a tunnel barrier layer and a reference layer. The method additionally includes forming a pinning layer over the MTJ structure, wherein the pinning layer pins a magnetization direction of the reference layer. The method additionally includes forming capping layer comprising chromium (Cr) over the pinning layer. The method further includes annealing the capping layer under a condition sufficient to cause diffusion of Cr from the capping layer into at least the pinning layer. According to another aspect, a magnetoresistive device is formed according to the method.

公开(公告)号：US20200020851A1

公开(公告)日：2020-01-16

申请号：US16443875

申请日：2019-06-18

申请人： Japan Science and Technology Agency ,  National Institute of Advanced Industrial Science and Technology

发明人： Shinji YUASA

IPC分类号： H01L43/10 ,  H01L27/22 ,  G11C11/16 ,  H01L43/02 ,  H01F10/32 ,  H01L43/12 ,  H01L43/08 ,  B82Y25/00 ,  H01L27/11507 ,  H01L49/02 ,  G11C11/15 ,  H01F10/13

摘要： The output voltage of an MRAM is increased by means of an Fe(001)/MgO(001)/Fe(001) MTJ device, which is formed by microfabrication of a sample prepared as follows: A single-crystalline MgO (001) substrate is prepared. An epitaxial Fe(001) lower electrode (a first electrode) is grown on a MgO(001) seed layer at room temperature, followed by annealing under ultrahigh vacuum. A MgO(001) barrier layer is epitaxially formed on the Fe(001) lower electrode (the first electrode) at room temperature, using a MgO electron-beam evaporation. A Fe(001) upper electrode (a second electrode) is then formed on the MgO(001) barrier layer at room temperature. This is successively followed by the deposition of a Co layer on the Fe(001) upper electrode (the second electrode). The Co layer is provided so as to increase the coercive force of the upper electrode in order to realize an antiparallel magnetization alignment.

公开(公告)号：US10401137B2

公开(公告)日：2019-09-03

申请号：US15349659

申请日：2016-11-11

申请人： OWEN OIL TOOLS LP

发明人： Timothy E. LaGrange ,  Lyle W. Andrich ,  Cory D. Day ,  Dan W. Pratt

IPC分类号： F42D1/04 ,  E21B43/117 ,  G08B13/24 ,  H01F10/13 ,  H01L41/20

摘要： A perforating gun includes a charge tube having shaped charges affixed thereto. Each shaped charge includes a radially outward pointing post adapted to receive a detonator cord. A retention member installed on the post provides a compressive force that energetically couples the detonator cord to the post. The radially outermost portion of the retention member is radially flush with or radially recessed relative to the radially outermost portion of each post. In one embodiment, the retention member has a rounded medial portion, a central opening and a pair of locking tabs that point radially inward to the central opening. Each post may include a slot for receiving the detonator cord and a circumferential groove that is adapted to receive the locking tabs.

公开(公告)号：US20190237099A1

公开(公告)日：2019-08-01

申请号：US16311367

申请日：2017-06-23

申请人： NATIONAL INSTITUTE FOR MATERIALS SCIENCE

发明人： Shinya KASAI ,  Yukiko TAKAHASHI ,  Pohan CHENG ,  IKHTIAR ,  Seiji MITANI ,  Tadakatsu OHKUBO ,  Kazuhiro HONO

IPC分类号： G11B5/39 ,  H01F10/13 ,  H01F10/16 ,  H01F10/30 ,  H01L29/82 ,  H01L43/08 ,  H01L43/10 ,  H01L43/12

CPC分类号： G11B5/3909 ,  G11B5/39 ,  H01F10/13 ,  H01F10/132 ,  H01F10/16 ,  H01F10/30 ,  H01L29/82 ,  H01L43/08 ,  H01L43/10 ,  H01L43/12

摘要： An object of the present invention is to provide a Magneto-Resistance (MR) element showing a high Magneto-Resistance (MR) ratio and having a suitable Resistance-Area (RA) for device applications. The MR element of the present invention has a laminated structure including a first ferromagnetic layer 16, a non-magnetic layer 18, and a second ferromagnetic layer 20 on a substrate 10, wherein the first ferromagnetic layer 16 includes a Heusler alloy, the second ferromagnetic layer 20 includes a Heusler alloy, the non-magnetic layer 18 includes a I-III-VI2 chalcopyrite-type compound semiconductor, and the non-magnetic layer 18 has a thickness of 0.5 to 3 nm, and wherein the MR element shows a Magneto-Resistance (MR) change of 40% or more, and has a resistance-area (RA) of 0.1 [Ωμm2] or more and 3 [Ωμm2] or less.

公开(公告)号：US08963579B2

公开(公告)日：2015-02-24

申请号：US13460193

申请日：2012-04-30

申请人： Dmitri E. Nikonov ,  George I. Bourianoff ,  Tahir Ghani

发明人： Dmitri E. Nikonov ,  George I. Bourianoff ,  Tahir Ghani

IPC分类号： H03K19/23 ,  H03K19/003 ,  G06F11/00 ,  H01L43/08 ,  B82Y25/00 ,  H01F10/32 ,  H01L43/12 ,  G11C11/16 ,  H01F41/30 ,  G01R33/09 ,  G01R33/12 ,  H01F10/13 ,  H01L27/22

CPC分类号： H01L43/08 ,  B82Y25/00 ,  B82Y40/00 ,  G01R33/093 ,  G01R33/1284 ,  G11C11/161 ,  H01F10/133 ,  H01F10/3254 ,  H01F10/329 ,  H01F41/307 ,  H01L27/22 ,  H01L27/228 ,  H01L43/12

摘要： Spin torque magnetic integrated circuits and devices therefor are described. In an example, a spin torque magnetic device for a logic circuit includes a majority gate structure. An output is coupled to the majority gate structure. Three inputs are also coupled to the majority gate structure.

摘要翻译： 描述了自旋扭矩磁集成电路及其装置。 在一个示例中，用于逻辑电路的自旋扭矩磁性装置包括多数门结构。 输出耦合到多数门结构。 三个输入也耦合到多数门结构。