SUBSTRATE PROCESSING APPARATUS AND SUBSTRATE PROCESSING METHOD

    公开(公告)号:US20230311172A1

    公开(公告)日:2023-10-05

    申请号:US18094344

    申请日:2023-01-06

    CPC classification number: B08B3/123 B08B3/08

    Abstract: A substrate processing apparatus includes a substrate support unit, supporting a substrate, and an ultrasonic cleaning module disposed in a location lower than an upper surface of the substrate support unit. The ultrasonic cleaning module may include a receiving portion receiving a chemical, an opening portion in which at least a portion of an upper surface of the receiving portion is opened, and an ultrasonic vibration unit disposed to be directed toward the opening portion from the receiving portion, and may be configured in such a manner that a liquid surface of the chemical, rising by the ultrasonic vibration unit, touches the substrate through the opening portion.

    HEATER AND METHOD OF MANUFACTURING THE SAME, AND AN APPARATUS FOR TREATING SUBSTRATE

    公开(公告)号:US20230292404A1

    公开(公告)日:2023-09-14

    申请号:US18162229

    申请日:2023-01-31

    Inventor: Jong Seok SEO

    Abstract: An apparatus for treating a substrate is provided. The apparatus includes: a support member provided in a process chamber and configured to support the substrate; and a heater heating element provided in the support member and configured to heat the substrate, wherein at least a part of the heater heating element comprises a first region to which a laser trimming process is applied, at least another part of the heater heating element comprises a second region on which a resistance adjusting material layer is implemented by an electrolytic plating process, and the amount of heat generated in the first region that is at least a part of the heater heating element is increased by performing the laser trimming process and the amount of heat generated in the second region that is at least another part of the heater heating element is decreased by forming the resistance adjusting material layer.

    APPARATUS AND METHOD FOR TREATING SUBSTRATE
    114.
    发明公开

    公开(公告)号:US20230288811A1

    公开(公告)日:2023-09-14

    申请号:US18310704

    申请日:2023-05-02

    Applicant: SEMES CO, LTD.

    CPC classification number: G03F7/167 H01L21/68742 H01L21/67017 H01L21/67103

    Abstract: The inventive concept provides an apparatus and method for treating a substrate with a gas. The apparatus includes a chamber having a process space in which the substrate is treated, a substrate support unit that supports the substrate in the process space, a gas supply unit that supplies a hydrophobic gas onto the substrate supported on the substrate support unit, and a controller that controls the substrate support unit and the gas supply unit. The substrate support unit includes a support plate on which the substrate is placed and a pin assembly that raises the substrate off the support plate or lowers the substrate onto the support plate, and the controller controls a degree of hydrophobization of a surface of the substrate by adjusting the pin assembly.

    LIQUID TRAP TANK AND LIQUID SUPPLY UNIT FOR THE LIQUID TRAP TANK

    公开(公告)号:US20230215745A1

    公开(公告)日:2023-07-06

    申请号:US17990819

    申请日:2022-11-21

    CPC classification number: H01L21/6715

    Abstract: A liquid trap tank and a liquid supply unit for the liquid trap tank are provided. The liquid trap tank includes a tank body which has an accommodating space formed therein to accommodate a liquid and has an inlet portion formed on one side and an outlet portion formed on an opposite side; and a liquid supply unit coupled to the inlet of the tank body to supply the liquid from the outside of the tank body to the accommodating space, wherein the liquid supply unit comprises an inlet pipe portion coupled to the inlet portion to introduce the liquid into the accommodating space and a flow directing portion connected to the inlet pipe portion and configured to induce a flow of the liquid to suppress generation of air bubbles due to a drop of the liquid passing through the inlet pipe portion.

    SUBSTRATE TREATING APPARATUS AND SUBSTRATE TREATING METHOD

    公开(公告)号:US20230213852A1

    公开(公告)日:2023-07-06

    申请号:US18148051

    申请日:2022-12-29

    CPC classification number: G03F1/78 G03F1/70

    Abstract: Disclosed is a method of treating a substrate, the method including: supplying a liquid to the substrate, emitting a laser to the substrate supplied with the liquid to heat the substrate, and emitting imaging light for capturing the substrate to obtain an image of the substrate including a region to which the laser is emitted, in which the laser and the imaging light are emitted to the substrate through a head lens, and a divergence angle of the laser emitted from the head lens and a divergence angle of the imaging light are matched with each other.

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