公开(公告)号：US09130098B2

公开(公告)日：2015-09-08

申请号：US13212539

申请日：2011-08-18

Applicant: Naoharu Sugiyama ,  Tomonari Shioda ,  Hisashi Yoshida ,  Shinya Nunoue

Inventor： Naoharu Sugiyama ,  Tomonari Shioda ,  Hisashi Yoshida ,  Shinya Nunoue

IPC: H01L27/15 ,  H01L33/06 ,  H01L33/12 ,  H01L33/32 ,  H01L33/46

CPC classification number: H01L33/06 ,  H01L33/12 ,  H01L33/32 ,  H01L33/46

Abstract: According to one embodiment, a semiconductor light emitting device includes a light emitting layer, a light transmitting layer and a first semiconductor layer. The light transmitting layer is transmittable with respect to light emitted from the light emitting layer. The first semiconductor layer contacts the light transmitting layer between the light emitting layer and the light transmitting layer. The light transmitting layer has a thermal expansion coefficient larger than a thermal expansion coefficient of the light transmitting layer, has a lattice constant smaller than a lattice constant of the active layer, and has a tensile stress in an in-plane direction.

Abstract translation: 根据一个实施例，半导体发光器件包括发光层，透光层和第一半导体层。 透光层相对于从发光层发射的光是可透射的。 第一半导体层与发光层和透光层之间的透光层接触。 透光层的热膨胀系数大于透光层的热膨胀系数，其晶格常数小于有源层的晶格常数，并且在面内方向具有拉伸应力。

公开(公告)号：US09053931B2

公开(公告)日：2015-06-09

申请号：US13626265

申请日：2012-09-25

Applicant: Hisashi Yoshida ,  Toshiki Hikosaka ,  Yoshiyuki Harada ,  Naoharu Sugiyama ,  Shinya Nunoue

Inventor： Hisashi Yoshida ,  Toshiki Hikosaka ,  Yoshiyuki Harada ,  Naoharu Sugiyama ,  Shinya Nunoue

IPC: H01L21/02 ,  H01L29/10 ,  H01L29/205 ,  H01L33/32 ,  H01L33/06

CPC classification number: H01L21/02381 ,  H01L21/02458 ,  H01L21/02505 ,  H01L21/0254 ,  H01L21/0262

Abstract: According to one embodiment, a nitride semiconductor wafer includes: a silicon substrate; a buffer section provided on the silicon substrate; and a functional layer provided on the buffer section and contains nitride semiconductor. The buffer section includes first to n-th buffer layers (n being an integer of 4 or more) containing nitride semiconductor. An i-th buffer layer (i being an integer of 1 or more and less than n) of the first to n-th buffer layers has a lattice length Wi in a first direction parallel to a major surface of the first buffer layer. An (i+1)-th buffer layer provided on the i-th buffer layer has a lattice length W(i+1) in the first direction. In the first to n-th buffer layers the i-th buffer layer and the (i+1)-th buffer layer satisfy relation of (W(i+1)−Wi)/Wi≦0.008.

Abstract translation: 根据一个实施例，氮化物半导体晶片包括：硅衬底; 设置在所述硅基板上的缓冲部; 以及设置在缓冲部上并包含氮化物半导体的功能层。 缓冲部包括含有氮化物半导体的第一〜第n缓冲层（n为4以上的整数）。 第一至第n缓冲层的第i个缓冲层（i为1以上且小于n的整数）在平行于第一缓冲层的主面的第一方向上具有晶格长度Wi。 设置在第i个缓冲层上的第（i + 1）个缓冲层在第一方向上具有晶格长度W（i + 1）。 在第一至第n缓冲层中，第i个缓冲层和第（i + 1）个缓冲层满足关系式（W（i + 1）-Wi）/ W i＆nlE; 0。008。

公开(公告)号：US08937328B2

公开(公告)日：2015-01-20

申请号：US13214410

申请日：2011-08-22

Applicant: Iwao Mitsuishi ,  Yumi Fukuda ,  Aoi Okada ,  Naotoshi Matsuda ,  Shinya Nunoue ,  Keiko Albessard ,  Masahiro Kato

Inventor： Iwao Mitsuishi ,  Yumi Fukuda ,  Aoi Okada ,  Naotoshi Matsuda ,  Shinya Nunoue ,  Keiko Albessard ,  Masahiro Kato

IPC: H01L33/00 ,  H01L21/44 ,  H01L33/50 ,  C09K11/08 ,  C09K11/77 ,  H01L25/075 ,  H01L33/54

CPC classification number: H01L33/504 ,  C09K11/0883 ,  C09K11/7734 ,  H01L24/45 ,  H01L25/0753 ,  H01L33/507 ,  H01L33/54 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2924/12041 ,  H01L2924/181 ,  H01L2933/0041 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/00012

Abstract: A light emitting device includes a light emitting element that emits light having a wavelength of 250 nm to 500 nm and a fluorescent layer that is disposed on the light emitting element. The fluorescent layer includes a phosphor having a composition expressed by the equation, ((M1−x1Eux1)3−ySi13−zAl3+zO2+uN21−w), and an average particle diameter of 12 μm or more, wherein in the equation, M is an element that is selected from IA group elements, IIA group elements, IIIA group elements, IIIB group elements except Al, rare-earth elements, and IVB group elements, and x1, y, z, u, and w satisfy each of the inequalities simultaneously, that is to say each of the following inequalities is satisfied by the choice of values of the identified paramaters within the noted ranges of 0

Abstract translation: 发光器件包括发射波长为250nm至500nm的光的发光元件和设置在发光元件上的荧光层。 荧光层包括具有由式（（M1-x1Eux1）3-ySi13-zAl3 + zO2 + uN21-w）表示的组成的荧光体，平均粒径为12μm以上，其中，在式 是选自IA组元素，IIA族元素，IIIA族元素，除了Al，稀土元素和IVB族元素之外的IIIB族元素，x1，y，z，u和w的元素满足 也就是说，通过在0

公开(公告)号：US08890194B2

公开(公告)日：2014-11-18

申请号：US13729457

申请日：2012-12-28

Applicant: Toru Gotoda ,  Shinji Yamada ,  Shinya Nunoue

Inventor： Toru Gotoda ,  Shinji Yamada ,  Shinya Nunoue

IPC: H01L33/22 ,  H01L33/00 ,  H01L33/64 ,  H01L33/40 ,  H01L33/32

CPC classification number: H01L33/32 ,  H01L33/0079 ,  H01L33/40 ,  H01L33/641

Abstract: According to one embodiment, a semiconductor light emitting device includes a metal substrate, a first semiconductor layer, a first semiconductor layer, a second semiconductor layer, a light emitting layer, a first intermediate layer and a second intermediate layer. The substrate has a coefficient of thermal expansion not more than 10×10−6 m/K. The first and second semiconductor layer include a nitride semiconductor. The second semiconductor layer is provided between the substrate and the first semiconductor layer. The emitting layer is provided between the first semiconductor layer and the second semiconductor layer. The first intermediate layer is provided between the substrate and the second semiconductor layer. The second intermediate layer is provided between the first intermediate layer and the second semiconductor layer. a surface roughness of a first surface of the substrate contacting the first intermediate layer is less than a thickness of the first intermediate layer.

Abstract translation: 根据一个实施例，半导体发光器件包括金属衬底，第一半导体层，第一半导体层，第二半导体层，发光层，第一中间层和第二中间层。 基板的热膨胀系数不大于10×10 -6 m / K。 第一和第二半导体层包括氮化物半导体。 第二半导体层设置在基板和第一半导体层之间。 发光层设置在第一半导体层和第二半导体层之间。 第一中间层设置在基板和第二半导体层之间。 第二中间层设置在第一中间层和第二半导体层之间。 与第一中间层接触的基板的第一表面的表面粗糙度小于第一中间层的厚度。

公开(公告)号：US08829544B2

公开(公告)日：2014-09-09

申请号：US13406770

申请日：2012-02-28

Applicant: Toshiki Hikosaka ,  Yoshiyuki Harada ,  Maki Sugai ,  Shinya Nunoue

Inventor： Toshiki Hikosaka ,  Yoshiyuki Harada ,  Maki Sugai ,  Shinya Nunoue

IPC: H01L33/32 ,  H01L33/20 ,  H01L33/12

CPC classification number: H01L33/20 ,  H01L33/0075 ,  H01L33/12 ,  H01L33/32 ,  H01L33/48

Abstract: According to an embodiment, a semiconductor light emitting device includes a foundation layer, a first semiconductor layer, a light emitting layer, and a second semiconductor layer. The foundation layer has an unevenness having recesses, side portions, and protrusions. A first major surface of the foundation layer has an overlay-region. The foundation layer has a plurality of dislocations including first dislocations whose one ends reaching the recess and second dislocations whose one ends reaching the protrusion. A proportion of a number of the second dislocations reaching the first major surface to a number of all of the second dislocations is smaller than a proportion of a number of the first dislocations reaching the first major surface to a number of all of the first dislocations. A number of the dislocations reaching the overlay-region of the first major surface is smaller than a number of all of the first dislocations.

Abstract translation: 根据实施例，半导体发光器件包括基底层，第一半导体层，发光层和第二半导体层。 基底层具有凹部，侧部和突起部的凹凸。 基础层的第一主表面具有覆盖区域。 基底层具有多个位错，其包括一端到达凹部的第一位错和一端到达突起的第二位错。 到达第一主表面的第二位错的数量与所有第二位错的数量的比例小于到达第一主表面的第一位错的数量与所有第一位错的数量的比例。 到达第一主表面的覆盖区域的多个位错小于所有第一位错的数量。

公开(公告)号：US08779437B2

公开(公告)日：2014-07-15

申请号：US13214626

申请日：2011-08-22

Applicant: Tomonari Shioda ,  Naoharu Sugiyama ,  Shinya Nunoue

Inventor： Tomonari Shioda ,  Naoharu Sugiyama ,  Shinya Nunoue

IPC: H01L29/15 ,  H01L29/06 ,  H01L21/20 ,  H01L29/205

CPC classification number: H01L29/205 ,  H01L21/02381 ,  H01L21/02458 ,  H01L21/02505 ,  H01L21/0254 ,  H01L29/2003 ,  H01L29/66462 ,  H01L29/7787 ,  H01L33/007 ,  H01L33/12

Abstract: According to one embodiment, a wafer includes a substrate, a base layer, a foundation layer, an intermediate layer and a functional unit. The substrate has a major surface. The base layer is provided on the major surface and includes a silicon compound. The foundation layer is provided on the base layer and includes GaN. The intermediate layer is provided on the foundation layer and includes a layer including AlN. The functional unit is provided on the intermediate layer and includes a nitride semiconductor. The foundation layer has a first region on a side of the base layer, and a second region on a side of the intermediate layer. A concentration of silicon atoms in the first region is higher than a concentration of silicon atoms in the second region. The foundation layer has a plurality of voids provided in the first region.

Abstract translation: 根据一个实施例，晶片包括基板，基底层，基础层，中间层和功能单元。 基板具有主表面。 基层设置在主表面上并且包括硅化合物。 基底层设置在基底层上并且包括GaN。 中间层设置在基础层上，并且包括包含AlN的层。 功能单元设置在中间层上并且包括氮化物半导体。 基底层在基层的一侧具有第一区域，在中间层的一侧具有第二区域。 第一区域中硅原子的浓度高于第二区域中硅原子的浓度。 基础层具有设置在第一区域中的多个空隙。

公开(公告)号：US08704268B2

公开(公告)日：2014-04-22

申请号：US13404531

申请日：2012-02-24

Applicant: Shigeya Kimura ,  Koichi Tachibana ,  Shinya Nunoue

Inventor： Shigeya Kimura ,  Koichi Tachibana ,  Shinya Nunoue

IPC: H01L33/30

CPC classification number: H01L33/06 ,  H01L33/32

Abstract: According to one embodiment, a semiconductor light emitting device includes an n-type semiconductor layer, a p-type semiconductor layer and a light emitting layer. The emitting layer is provided between the n-type layer and the p-type layer, and includes a plurality of barrier layers and a plurality of well layers, being alternately stacked. The p-side barrier layer being closest to the p-type layer among the plurality of barrier layer includes a first layer and a second layer, containing group III elements. An In composition ratio in the group III elements of the second layer is higher than an In composition ratio in the group III elements of the first layer. An average In composition ratio of the p-side layer is higher than an average In composition ratio of an n-side barrier layer that is closest to the n-type layer among the plurality of barrier layers.

Abstract translation: 根据一个实施例，半导体发光器件包括n型半导体层，p型半导体层和发光层。 发光层设置在n型层和p型层之间，并且包括交替层叠的多个势垒层和多个阱层。 在多个阻挡层中最靠近p型层的p侧阻挡层包括含有III族元素的第一层和第二层。 第二层的III族元素中的In组成比高于第一层的III族元素中的In组成比。 p侧层的平均In组成比高于多个势垒层中最靠近n型层的n侧阻挡层的平均In组成比。

公开(公告)号：US08680566B2

公开(公告)日：2014-03-25

申请号：US13718618

申请日：2012-12-18

Applicant: Eiji Muramoto ,  Shinya Nunoue

Inventor： Eiji Muramoto ,  Shinya Nunoue

IPC: H01L33/00

CPC classification number: H01L33/06 ,  H01L33/42 ,  H01L33/62 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A semiconductor light emitting device includes an n-type semiconductor layer, a p-type semiconductor layer, and an active layer formed between the n-type semiconductor layer and the p-type semiconductor layer, and emitting light. The device further includes a p-electrode contacting to the p-type semiconductor layer, and including a first conductive oxide layer having an oxygen content lower than 40 atomic % and a second conductive oxide layer contacting to the first conductive oxide layer and having a higher oxygen content than the oxygen content of the first conductive oxide layer. The device also includes an n-electrode connecting electrically to the n-type semiconductor layer.

Abstract translation: 半导体发光器件包括n型半导体层，p型半导体层和形成在n型半导体层和p型半导体层之间的有源层，并且发射光。 该器件还包括与p型半导体层接触的p电极，并且包括氧含量低于40原子％的第一导电氧化物层和与第一导电氧化物层接触并具有较高的第二导电氧化物层的第二导电氧化物层 氧含量比第一导电氧化物层的氧含量高。 该器件还包括与n型半导体层电连接的n电极。

公开(公告)号：US20140061693A1

公开(公告)日：2014-03-06

申请号：US13626265

申请日：2012-09-25

Applicant: Hisashi YOSHIDA ,  Toshiki Hikosaka ,  Yoshiyuki Harada ,  Naoharu Sugiyama ,  Shinya Nunoue

Inventor： Hisashi YOSHIDA ,  Toshiki Hikosaka ,  Yoshiyuki Harada ,  Naoharu Sugiyama ,  Shinya Nunoue

IPC: H01L31/0304 ,  H01L21/20 ,  H01L29/205

CPC classification number: H01L21/02381 ,  H01L21/02458 ,  H01L21/02505 ,  H01L21/0254 ,  H01L21/0262

Abstract: According to one embodiment, a nitride semiconductor wafer includes: a silicon substrate; a buffer section provided on the silicon substrate; and a functional layer provided on the buffer section and contains nitride semiconductor. The buffer section includes first to n-th buffer layers (n being an integer of 4 or more) containing nitride semiconductor. An i-th buffer layer (i being an integer of 1 or more and less than n) of the first to n-th buffer layers has a lattice length Wi in a first direction parallel to a major surface of the first buffer layer. An (i+1)-th buffer layer provided on the i-th buffer layer has a lattice length W(i+1) in the first direction. In the first to n-th buffer layers the i-th buffer layer and the (i+1)-th buffer layer satisfy relation of (W(i+1)−Wi)/Wi≦0.008.

Abstract translation: 根据一个实施例，氮化物半导体晶片包括：硅衬底; 设置在所述硅基板上的缓冲部; 以及设置在缓冲部上并包含氮化物半导体的功能层。 缓冲部包括含有氮化物半导体的第一〜第n缓冲层（n为4以上的整数）。 第一至第n缓冲层的第i个缓冲层（i为1以上且小于n的整数）在平行于第一缓冲层的主面的第一方向上具有晶格长度Wi。 设置在第i个缓冲层上的第（i + 1）个缓冲层在第一方向上具有晶格长度W（i + 1）。 在第一至第n缓冲层中，第i个缓冲层和第（i + 1）个缓冲层满足关系式（W（i + 1）-Wi）/ Wi0.008。

公开(公告)号：US20140048816A1

公开(公告)日：2014-02-20

申请号：US13729457

申请日：2012-12-28

Applicant: Toru GOTODA ,  Shinji YAMADA ,  Shinya NUNOUE

Inventor： Toru GOTODA ,  Shinji YAMADA ,  Shinya NUNOUE

IPC: H01L33/32

CPC classification number: H01L33/32 ,  H01L33/0079 ,  H01L33/40 ,  H01L33/641

Abstract: According to one embodiment, a semiconductor light emitting device includes a metal substrate, a first semiconductor layer, a first semiconductor layer, a second semiconductor layer, a light emitting layer, a first intermediate layer and a second intermediate layer. The substrate has a coefficient of thermal expansion not more than 10×10−6 m/K. The first and second semiconductor layer include a nitride semiconductor. The second semiconductor layer is provided between the substrate and the first semiconductor layer. The emitting layer is provided between the first semiconductor layer and the second semiconductor layer. The first intermediate layer is provided between the substrate and the second semiconductor layer. The second intermediate layer is provided between the first intermediate layer and the second semiconductor layer. a surface roughness of a first surface of the substrate contacting the first intermediate layer is less than a thickness of the first intermediate layer.

Abstract translation: 根据一个实施例，半导体发光器件包括金属衬底，第一半导体层，第一半导体层，第二半导体层，发光层，第一中间层和第二中间层。 基板的热膨胀系数不大于10×10 -6 m / K。 第一和第二半导体层包括氮化物半导体。 第二半导体层设置在基板和第一半导体层之间。 发光层设置在第一半导体层和第二半导体层之间。 第一中间层设置在基板和第二半导体层之间。 第二中间层设置在第一中间层和第二半导体层之间。 与第一中间层接触的基板的第一表面的表面粗糙度小于第一中间层的厚度。