公开(公告)号：US06537924B2

公开(公告)日：2003-03-25

申请号：US09921893

申请日：2001-08-06

申请人： Shuji Tobashi ,  Tadashi Ohashi ,  Shinichi Mitani ,  Hideki Arai ,  Hidenori Takahashi

发明人： Shuji Tobashi ,  Tadashi Ohashi ,  Shinichi Mitani ,  Hideki Arai ,  Hidenori Takahashi

IPC分类号： H01L2131

CPC分类号： C30B29/06 ,  C23C16/24 ,  C23C16/4584 ,  C30B25/14 ,  H01L21/02381 ,  H01L21/02532 ,  H01L21/0262

摘要： A method of chemically growing a thin film in a gas phase using a rotary gaseous phase thin film growth apparatus which feeds a material gas by flowing down the gas from above to a surface of a rotating silicon semiconductor substrate to grow a thin film on a surface of said silicon semiconductor substrate in a method of chemically growing a thin film that a thin film-growing reaction is done wherein: monosilane gas is used as an effective component of the material gas to grow the thin film under a reduced pressure of from 2.7×102 to 6.7×103 Pa with the number of rotations of said silicon semiconductor substrate being from 500 to 2000 min−1 and at a reaction temperature of from 600° C. to 800° C.

公开(公告)号：US06335464B1

公开(公告)日：2002-01-01

申请号：US09508176

申请日：2000-03-08

申请人： Kiyoshige Ochi ,  Hidenori Takahashi ,  Hideki Tanaka ,  Hiroshi Sugiyama ,  Isao Fujisaki ,  Kazutomo Ori

发明人： Kiyoshige Ochi ,  Hidenori Takahashi ,  Hideki Tanaka ,  Hiroshi Sugiyama ,  Isao Fujisaki ,  Kazutomo Ori

IPC分类号： C07C2710

CPC分类号： B01J31/40 ,  B01J31/006 ,  B01J31/0235 ,  B01J31/08 ,  B01J2231/70

摘要： A method for selectively oxidizing the primary hydroxyl group of an organic compound which comprises reacting a resin having an amine oxide adsorbed thereon and an electrolytically oxidized product of a halogen-containing compound with the organic compound having the primary hydroxyl group.

摘要翻译： 选择性氧化有机化合物的伯羟基的方法，其包括使其上吸附有氧化胺的树脂与含卤素化合物的电解氧化产物与具有伯羟基的有机化合物反应。

公开(公告)号：US4500544A

公开(公告)日：1985-02-19

申请号：US412075

申请日：1982-08-27

申请人： Tomoyoshi Hosokawa ,  Ikutoshi Matsuura ,  Hidenori Takahashi ,  Kunio Ando ,  Gakuzo Tamura

发明人： Tomoyoshi Hosokawa ,  Ikutoshi Matsuura ,  Hidenori Takahashi ,  Kunio Ando ,  Gakuzo Tamura

IPC分类号： C07C59/125 ,  A61K31/215 ,  C07C59/92 ,  C07C69/738 ,  C07C403/00 ,  C07D213/79 ,  C07D213/80 ,  A61K31/19

CPC分类号： C07D213/79 ,  C07C403/14 ,  C07D213/80 ,  C07C2101/14

摘要： Ascochlorin derivatives of the formula: ##STR1## wherein R is a hydroxyl group, a lower alkoxy group, a pyridyl group, an amino group, a dialkylamino group, a phenoxyalkyl group which may have a substituent in the nucleus, or a phenyl group which may have a substituent in the nucleus; and n is an integer of 0 to 5, a process for preparing the same and a pharmaceutical composition containing the same are disclosed.The derivatives are useful to treat diabetes, improve lipid metabolism and control tumors.

摘要翻译： 或者苯基，其中R为羟基，低级烷氧基，吡啶基，氨基，二烷基氨基，在核中可具有取代基的苯氧基烷基，或苯基， 可能在细胞核中具有取代基; n为0〜5的整数，其制备方法和含有该组合物的药物组合物。 该衍生物可用于治疗糖尿病，改善脂质代谢和控制肿瘤。

公开(公告)号：US09140981B2

公开(公告)日：2015-09-22

申请号：US13614797

申请日：2012-09-13

申请人： Kaoru Iwato ,  Hidenori Takahashi ,  Michihiro Shirakawa

发明人： Kaoru Iwato ,  Hidenori Takahashi ,  Michihiro Shirakawa

IPC分类号： G03F7/004 ,  G03F7/38 ,  C07D327/10 ,  C07C303/32 ,  C07C309/04 ,  C07C309/06 ,  C07C309/12 ,  C07C309/17 ,  C07C309/19 ,  C07C309/24 ,  G03F7/038 ,  G03F7/039 ,  B32B3/10 ,  G03F7/20

CPC分类号： G03F7/0045 ,  B32B3/10 ,  C07C303/32 ,  C07C309/04 ,  C07C309/06 ,  C07C309/12 ,  C07C309/17 ,  C07C309/19 ,  C07C309/24 ,  C07D327/10 ,  G03F7/0046 ,  G03F7/038 ,  G03F7/0382 ,  G03F7/0397 ,  G03F7/11 ,  G03F7/20 ,  G03F7/2041 ,  G03F7/325 ,  G03F7/38 ,  Y10T428/24802

摘要： Provided are an actinic-ray-sensitive or a radiation-sensitive resin composition with greater residual film ratio and capable of suppressing pattern collapse and an occurrence of bridge defects after development, and a resist film, a pattern forming method, an electronic device manufacturing method, and an electronic device, each using the same. An actinic-ray-sensitive or radiation-sensitive resin composition includes a resin (P) having a repeating unit (a) represented by following General Formula (I), a compound (B) represented by any of following General Formulae (B-1) to (B-3), and a solvent, in General Formula (I), R0 represents a hydrogen atom or a methyl group, and R1, R2 and R3 each independently represent a straight chain or branched alkyl group.

摘要翻译： 本发明提供了具有更大的残留膜比并且能够抑制图案塌陷和显影后的桥缺陷的发生的光化学敏感性或辐射敏感性树脂组合物，以及抗蚀剂膜，图案形成方法，电子器件制造方法 ，以及各自使用的电子设备。 光化射线敏感性或辐射敏感性树脂组合物包含具有下述通式（I）表示的重复单元（a）的树脂（P），下述通式（B-1） ）至（B-3），和通式（I）中的R 0表示氢原子或甲基的溶剂，R 1，R 2和R 3各自独立地表示直链或支链烷基。

公开(公告)号：US09136352B2

公开(公告)日：2015-09-15

申请号：US13320211

申请日：2010-07-29

申请人： Yasushi Niimura ,  Sota Watanabe ,  Hidenori Takahashi ,  Takumi Fujimoto ,  Takeyoshi Nishimura ,  Takamasa Wakabayashi

发明人： Yasushi Niimura ,  Sota Watanabe ,  Hidenori Takahashi ,  Takumi Fujimoto ,  Takeyoshi Nishimura ,  Takamasa Wakabayashi

IPC分类号： H01L29/78 ,  H01L29/66 ,  H01L29/08 ,  H01L29/06 ,  H01L29/10 ,  H01L29/40 ,  H01L29/417 ,  H01L29/423

CPC分类号： H01L29/7811 ,  H01L21/266 ,  H01L29/0615 ,  H01L29/0619 ,  H01L29/063 ,  H01L29/0638 ,  H01L29/0696 ,  H01L29/0878 ,  H01L29/1095 ,  H01L29/404 ,  H01L29/41741 ,  H01L29/41766 ,  H01L29/42368 ,  H01L29/66712 ,  H01L29/66727 ,  H01L29/7395 ,  H01L29/7802

摘要： A screen oxide film is formed on an n− drift layer (2) that is disposed on an anterior side of an n-type low-resistance layer (1), and a nitride film is formed on the screen oxide film. The nitride film is photo-etched using a first mask and thereby, a nitride shielding film (61) is formed. N-type impurity ions at a concentration higher than that of the n-drift layer are implanted through the nitride shielding film (61) from an anterior side of a semiconductor substrate and are thermally diffused and thereby, an n counter layer (7) is formed. The screen oxide film is removed. A gate oxide film (3a) is formed. A gate electrode (9) is formed on the gate oxide film (3a). P-type impurity ions are implanted from the anterior side of the semiconductor substrate using the gate electrode (9) and the nitride shielding film (61) as a mask and thereby, p− well regions (10) are formed. N-type impurity ions are implanted from the anterior side of the semiconductor substrate using the gate electrode (9) and the nitride shielding film (61) as a mask and thereby, n source regions (11) are formed.

摘要翻译： 在设置在n型低电阻层（1）的前侧的n漂移层（2）上形成荧光体氧化膜，在该荧光体氧化膜上形成氮化膜。 使用第一掩模对氮化物膜进行光蚀刻，从而形成氮化物屏蔽膜（61）。 浓度高于n漂移层的N型杂质离子从半导体衬底的前侧通过氮化物屏蔽膜（61）注入并被热扩散，由此n对置层（7）为 形成。 去除屏幕氧化膜。 形成栅氧化膜（3a）。 栅电极（9）形成在栅氧化膜（3a）上。 使用栅电极（9）和氮化物屏蔽膜（61）作为掩模，从半导体衬底的前侧注入P型杂质离子，从而形成p-阱区（10）。 使用栅电极（9）和氮化物屏蔽膜（61）作为掩模，从半导体衬底的前侧注入N型杂质离子，从而形成n个源区（11）。

公开(公告)号：US09122151B2

公开(公告)日：2015-09-01

申请号：US13406165

申请日：2012-02-27

申请人： Kana Fujii ,  Hidenori Takahashi ,  Fumiyuki Nishiyama

发明人： Kana Fujii ,  Hidenori Takahashi ,  Fumiyuki Nishiyama

IPC分类号： G03F7/004 ,  G03F7/20 ,  G03F7/039 ,  G03F7/32 ,  B23B3/10

CPC分类号： G03F7/004 ,  B23B3/10 ,  B32B3/10 ,  G03F7/0045 ,  G03F7/0046 ,  G03F7/0397 ,  G03F7/20 ,  G03F7/2041 ,  G03F7/325

摘要： A resist composition includes a resin (A) containing any of repeating units (a) of general formulae (I-a) and (I-b) below and any of repeating units (b) of general formula (II) below but containing substantially no repeating unit in which an alcoholic hydroxyl group is introduced, and any of compounds (B) of general formulae (III-a) and (III-b) below.

摘要翻译： 抗蚀剂组合物包含含有下述通式（Ia）和（Ib）的重复单元（a）和下述通式（II）的重复单元（b）中任何一种但基本上不含重复单元的树脂（A） 其中引入醇羟基，以及通式（III-a）和（III-b）的化合物（B）中的任何一种。

公开(公告)号：US09120288B2

公开(公告)日：2015-09-01

申请号：US13614672

申请日：2012-09-13

申请人： Hidenori Takahashi ,  Shuhei Yamaguchi ,  Shohei Kataoka ,  Michihiro Shirakawa ,  Fumihiro Yoshino ,  Shoichi Saitoh

发明人： Hidenori Takahashi ,  Shuhei Yamaguchi ,  Shohei Kataoka ,  Michihiro Shirakawa ,  Fumihiro Yoshino ,  Shoichi Saitoh

IPC分类号： G03F7/027 ,  G03F7/038 ,  G03F7/075 ,  B32B3/10 ,  G03F7/039 ,  G03F7/004 ,  G03F7/20 ,  G03F7/11 ,  G03F7/32 ,  G03F7/40

CPC分类号： B32B3/10 ,  G03F7/004 ,  G03F7/0045 ,  G03F7/0046 ,  G03F7/027 ,  G03F7/0382 ,  G03F7/039 ,  G03F7/0392 ,  G03F7/0397 ,  G03F7/075 ,  G03F7/0758 ,  G03F7/11 ,  G03F7/20 ,  G03F7/2041 ,  G03F7/325 ,  G03F7/40 ,  Y10T428/24802

摘要： The pattern forming method of the invention includes (i) forming a film using an actinic ray-sensitive or radiation-sensitive resin composition containing a resin (P) having a repeating unit (a) represented by the following general formula (I), a compound (B) capable of generating an organic acid upon irradiation with actinic rays or radiation, and a nitrogen-containing organic compound (NA) having a group capable of leaving by the action of an acid, (ii) exposing the film, and (iii) developing the film after the exposure using a developer including an organic solvent to form a negative type pattern, in the general formula (I), R0 represents a hydrogen atom or a methyl group, and each of R1, R2, and R3 independently represents a linear or branched alkyl group.

摘要翻译： 本发明的图案形成方法包括：（i）使用含有具有由以下通式（I）表示的重复单元（a）的树脂（P）的光化射线敏感性或辐射敏感性树脂组合物形成膜， 能够在用光化学射线或辐射照射时能够产生有机酸的化合物（B）和具有能够通过酸作用离去的基团的含氮有机化合物（NA），（ii）曝光该膜和（ iii）使用包含有机溶剂的显影剂在曝光后显影膜以形成负型图案，在通式（I）中，R 0表示氢原子或甲基，R 1，R 2和R 3各自独立地 表示直链或支链烷基。

公开(公告)号：US09022983B2

公开(公告)日：2015-05-05

申请号：US14122084

申请日：2012-05-22

申请人： Mitsutaka Ueda ,  Ryoichi Akai ,  Hidenori Takahashi

发明人： Mitsutaka Ueda ,  Ryoichi Akai ,  Hidenori Takahashi

IPC分类号： A61M5/168 ,  A61M5/142 ,  F04B43/00 ,  F04B43/08 ,  F04B43/12 ,  F04B49/10 ,  A61M39/28

CPC分类号： A61M5/16813 ,  A61M5/142 ,  A61M5/14228 ,  A61M39/281 ,  A61M39/285 ,  A61M39/286 ,  A61M2205/14 ,  F04B43/0081 ,  F04B43/082 ,  F04B43/1223 ,  F04B49/10

摘要： An infusion pump includes a pump body for holding a roller clamp 7, and a roller movement mechanism 3 for moving a roller 72 of the roller clamp 7 and operating in coordination with manipulation of a door lock mechanism. When the door lock mechanism is in an unlocked state, an infusion tube T is blocked by the roller clamp 72. This configuration reliably prevents free flow even if a door is not closed completely or if the door is accidentally left unlocked. After the finish of infusion treatment, the infusion tube T is blocked by the roller clamp 7 at the moment when the door lock mechanism is unlocked before the opening of the door. This configuration avoids a trouble of removing the infusion tube T from the infusion pump while a user forgets to block the infusion tube by the roller clamp 7.

摘要翻译： 输液泵包括用于保持辊夹具7的泵体和用于移动辊夹7的辊72并与门锁机构的操纵协同操作的辊移动机构3。 当门锁机构处于解锁状态时，输液管T被辊夹具72阻挡。即使门未完全闭合或者门被意外地未锁定，该结构可靠地防止自由流动。 在输液处理完成之后，在门打开之前门锁机构被解锁时，输液管T被滚子夹具7阻挡。 这种构造避免了在用户忘记通过辊夹7阻塞输液管时从输注泵中移除输液管T的麻烦。

公开(公告)号：US08975575B2

公开(公告)日：2015-03-10

申请号：US14009587

申请日：2012-04-04

申请人： Sadanori Sekiya ,  Masaki Murase ,  Hidenori Takahashi ,  Kentaro Morimoto

发明人： Sadanori Sekiya ,  Masaki Murase ,  Hidenori Takahashi ,  Kentaro Morimoto

IPC分类号： H01J49/00 ,  H01J49/26 ,  H01J49/04 ,  G01N33/68

CPC分类号： H01J49/005 ,  G01N33/68 ,  G01N33/6848 ,  G01N2333/4728 ,  H01J49/0027 ,  H01J49/004 ,  H01J49/0045 ,  H01J49/0481 ,  H01J49/26

摘要： A mass spectrometry using helium as cooling gas is performed to obtain a first mass spectrum (S1), and another mass spectrometry using argon, which is heavier than helium, as cooling gas is performed to obtain a second mass spectrum for the same sample (S2). Due to the difference between the two gases in terms of the effect of promoting dissociation of modifications, an ion peak originating from a target compound from which all the modifications have been dissociated will appear with a higher intensity on the second mass spectrum. The peak patterns of the two mass spectra are compared to locate the all-dissociated ion peak while excluding unnecessary peaks (S3). Based on that peak, the assignment of each peak is determined (S4). Such a method is effective for enhancing the accuracy of the determination of the assignment of the peaks on the mass spectra and for improving the accuracy of identification or structural analysis in the case of a mass spectrometry of a compound to which an easily dissociable modification, such as a Sialylated glycosylated peptide, is bonded.

摘要翻译： 进行使用氦气作为冷却气体的质谱法以获得第一质谱（S1），并且进行使用比氦重的氩气作为冷却气体的另一种质谱法，以获得相同样品的第二质谱（S2 ）。 由于两种气体在促进改性解离的作用方面的差异，源自所有修饰已被解离的靶化合物的离子峰将在第二质谱上具有较高的强度。 比较两个质谱的峰图，定位全解离离子峰，同时排除不必要的峰（S3）。 基于该峰值，确定每个峰值的分配（S4）。 这种方法对于提高确定质谱图上的峰的分配的准确度是有效的，并且为了提高鉴定或结构分析的准确性，在化合物的质谱法中，其易于解离的修饰如 作为唾液酸化的糖基化肽键合。

公开(公告)号：US20140243745A1

公开(公告)日：2014-08-28

申请号：US14346828

申请日：2012-09-11

申请人： Mitsutaka Ueda ,  Ryoichi Akai ,  Hidenori Takahashi

发明人： Mitsutaka Ueda ,  Ryoichi Akai ,  Hidenori Takahashi

IPC分类号： A61M5/168 ,  A61M5/142

CPC分类号： A61M5/16813 ,  A61M5/14212 ,  A61M5/14224 ,  A61M5/14228 ,  F04B43/082

摘要： An infusion pump has a primary finger with an inclined surface, which is obliquely inclined to an advancing and retracting direction, and a secondary finger with an inclined surface, which is slidable relative to the inclined surface of the primary finger. When the primary finger is advanced, the secondary finger is retracted in proportion to the variation (increasing) in an entire width of an infusion tube, and when the primary finger is retracted, the secondary finger is advanced in proportion the variation (decreasing) in the entire width of the infusion tube. This configuration can suppress the occurrence of any gap between a tip surface of the secondary finger and an outer peripheral surface of the infusion tube in the advancing and retracting process of the primary finger. Consequently, this prevents the infusion tube from meandering, and suppresses the reduction in the accuracy of the rate of infusion.

摘要翻译： 输液泵具有主指状物，其具有倾斜的倾斜表面，其倾斜地朝向前进和后退方向，以及具有相对于主指状物的倾斜表面可滑动的倾斜表面的次级手指。 当主指状物前进时，辅助手指与输液管的整个宽度的变化（增加）成比例地缩回，并且当主指缩回时，次级手指按比例（递减） 输液管的整个宽度。 这种构造可以抑制在主指的前进和缩回过程中二次手指的尖端表面和输注管的外周表面之间的任何间隙的发生。 因此，能够防止输液管曲折，能够抑制输液速度的精度降低。