公开(公告)号：US07653099B2

公开(公告)日：2010-01-26

申请号：US11569683

申请日：2005-06-02

申请人： Yoshiaki Hasegawa ,  Toshiya Yokogawa ,  Hiroyoshi Yajima

发明人： Yoshiaki Hasegawa ,  Toshiya Yokogawa ,  Hiroyoshi Yajima

IPC分类号： H01S3/04 ,  H01L23/45

CPC分类号： H01S5/02212 ,  H01L2224/48091 ,  H01S5/0222 ,  H01S5/02296 ,  H01S5/024 ,  H01S5/32341 ,  H01L2924/00014

摘要： A semiconductor laser device according to the present invention includes: a semiconductor laser chip 1 for emitting laser light; a stem 3, 4 for supporting the semiconductor laser chip; a plurality of terminal electrodes, inserted in throughholes provided in the stem 3, 4, for supplying power to the semiconductor laser chip; and a cap 5 having an optical window 6 which transmits laser light and being affixed to the stem 3, 4 so as to cover the semiconductor laser chip 1. Between the stem 3, 4 and the terminal electrodes 7, this device includes insulation glass 8, which does not release silicon fluoride gas when heated to a temperature of no less than 700° C. and no more than 850° C.

摘要翻译： 根据本发明的半导体激光器件包括：用于发射激光的半导体激光器芯片1; 用于支撑半导体激光芯片的杆3,4; 多个端子电极，插入设置在杆体3,4中的通孔中，用于向半导体激光器芯片供电; 以及盖5，其具有透光激光并固定到杆3,4的光学窗口6以覆盖半导体激光器芯片1.在杆3,4之间和端子电极7之间，该器件包括绝缘玻璃8 ，当加热到不低于700℃且不超过850℃的温度时不释放氟化硅气体。

公开(公告)号：US20090294797A1

公开(公告)日：2009-12-03

申请号：US12375118

申请日：2007-07-13

申请人： Naomi Anzue ,  Gaku Sugahara ,  Yoshiaki Hasegawa ,  Akihiko Ishibashi ,  Toshiya Yokogawa

发明人： Naomi Anzue ,  Gaku Sugahara ,  Yoshiaki Hasegawa ,  Akihiko Ishibashi ,  Toshiya Yokogawa

IPC分类号： H01L33/00 ,  H01L21/78

CPC分类号： H01S5/34333 ,  B82Y20/00 ,  H01L33/32 ,  H01L33/38 ,  H01L33/40 ,  H01S5/0202 ,  H01S5/02272 ,  H01S5/028 ,  H01S5/0425 ,  H01S5/22 ,  H01S5/2201 ,  H01S5/3202 ,  H01S2304/04

摘要： A semiconductor light-emitting device according to the present invention includes: a GaN substrate 1 containing an n-type impurity and being made of silicon carbide or a nitride semiconductor; a multilayer structure 10 provided on a main surface of the GaN substrate 1; a p-electrode 17 formed on the multilayer structure 10; a first n-electrode 18 substantially covering the entire rear surface of the GaN substrate 1; and a second n-electrode 20 provided on the first n-electrode 18 so as to expose at least a portion of the periphery of the first n-electrode 18.

摘要翻译： 根据本发明的半导体发光器件包括：包含n型杂质并由碳化硅或氮化物半导体制成的GaN衬底1; 设置在GaN衬底1的主表面上的多层结构10; 形成在多层结构体10上的p电极17; 基本上覆盖GaN衬底1的整个后表面的第一n电极18; 以及设置在第一n电极18上以露出第一n电极18的周边的至少一部分的第二n电极20。

公开(公告)号：US07622749B2

公开(公告)日：2009-11-24

申请号：US11972844

申请日：2008-01-11

申请人： Yoshiaki Hasegawa ,  Toshiya Yokogawa ,  Atsushi Yamada

发明人： Yoshiaki Hasegawa ,  Toshiya Yokogawa ,  Atsushi Yamada

IPC分类号： H01L29/207

CPC分类号： B82Y20/00 ,  H01S5/0213 ,  H01S5/2201 ,  H01S5/2206 ,  H01S5/2216 ,  H01S5/2231 ,  H01S5/305 ,  H01S5/34333 ,  H01S2304/04 ,  H01S2304/12

摘要： A method for fabricating a semiconductor light-emitting element according to the present invention includes the steps of (A) providing a striped masking layer on a first Group III-V compound semiconductor, (B) selectively growing a second Group III-V compound semiconductor over the entire surface of the first Group III-V compound semiconductor except a portion covered with the masking layer, thereby forming a current confining layer that has a striped opening defined by the masking layer, (C) selectively removing the masking layer, and (D) growing a third Group III-V compound semiconductor to cover the surface of the first Group III-V compound semiconductor, which is exposed through the striped opening, and the surface of the current confining layer.

摘要翻译： 根据本发明的制造半导体发光元件的方法包括以下步骤：（A）在第一III-V族化合物半导体上提供条纹掩模层，（B）选择性地生长第二III-V族化合物半导体 在除了被掩模层覆盖的部分之外的第一III-V族化合物半导体的整个表面上，由此形成具有由掩模层限定的条纹开口的电流限制层，（C）选择性地去除掩模层，和 D）生长第三组III-V族化合物半导体以覆盖通过条纹开口暴露的第一III-V族化合物半导体的表面和电流限制层的表面。

公开(公告)号：US20080273562A1

公开(公告)日：2008-11-06

申请号：US11570147

申请日：2006-05-12

申请人： Yoshiaki Hasegawa ,  Akihiko Ishibashi ,  Toshiya Yokogawa

发明人： Yoshiaki Hasegawa ,  Akihiko Ishibashi ,  Toshiya Yokogawa

IPC分类号： H01S5/323 ,  H01L33/00

CPC分类号： H01S5/34333 ,  B82Y20/00 ,  H01L33/20 ,  H01L33/22 ,  H01L33/382 ,  H01S5/0207 ,  H01S5/0421 ,  H01S5/0425

摘要： A nitride semiconductor device 100 according to the present invention includes: an n-GaN substrate 1; a semiconductor multilayer structure, which has been formed on the principal surface of the n-GaN substrate 1 and which includes a p-type region and an n-type region; a p-electrode 32, which makes contact with a portion of the p-type region included in the semiconductor multilayer structure; and an n-electrode 34, which is arranged on the bottom surface of the substrate 1. The bottom surface of the substrate 1 includes a roughened region 40a and a flattened region 40b. And the n-electrode 34 covers the roughened region 40a at least partially.

摘要翻译： 根据本发明的氮化物半导体器件100包括：n-GaN衬底1; 形成在n-GaN衬底1的主表面上并且包括p型区和n型区的半导体多层结构; p电极32，其与包括在半导体多层结构中的p型区域的一部分接触; 以及配置在基板1的底面上的n电极34。 基板1的底表面包括粗糙区域40a和平坦区域40b。 并且n电极34至少部分地覆盖粗糙化区域40a。

公开(公告)号：US20080049800A1

公开(公告)日：2008-02-28

申请号：US11569683

申请日：2005-06-02

申请人： Yoshiaki Hasegawa ,  Toshiya Yokogawa ,  Hiroyoshi Yajima

发明人： Yoshiaki Hasegawa ,  Toshiya Yokogawa ,  Hiroyoshi Yajima

IPC分类号： H01S5/022 ,  G11B7/00 ,  H01L33/00

CPC分类号： H01S5/02212 ,  H01L2224/48091 ,  H01S5/0222 ,  H01S5/02296 ,  H01S5/024 ,  H01S5/32341 ,  H01L2924/00014

摘要： A semiconductor laser device according to the present invention includes: a semiconductor laser chip 1 for emitting laser light; a stem 3, 4 for supporting the semiconductor laser chip; a plurality of terminal electrodes, inserted in throughholes provided in the stem 3, 4, for supplying power to the semiconductor laser chip; and a cap 5 having an optical window 6 which transmits laser light and being affixed to the stem 3, 4 so as to cover the semiconductor laser chip 1. Between the stem 3, 4 and the terminal electrodes 7, this device includes insulation glass 8, which does not release silicon fluoride gas when heated to a temperature of no less than 700° C. and no more than 850° C.

摘要翻译： 根据本发明的半导体激光器件包括：用于发射激光的半导体激光器芯片1; 用于支撑半导体激光芯片的杆3,4; 多个端子电极，插入设置在杆体3,4中的通孔中，用于向半导体激光器芯片供电; 以及盖5，其具有透光激光并固定到杆3,4的光学窗口6以覆盖半导体激光器芯片1。 在杆3,4之间和端子电极7之间，该装置包括绝热玻璃8，当加热至不低于700℃且不超过850℃的温度时不会释放氟化硅气体。

公开(公告)号：US20080042244A1

公开(公告)日：2008-02-21

申请号：US11568481

申请日：2005-10-13

申请人： Naomi Anzue ,  Toshiya Yokogawa ,  Yoshiaki Hasegawa

发明人： Naomi Anzue ,  Toshiya Yokogawa ,  Yoshiaki Hasegawa

IPC分类号： H01L29/12 ,  H01L21/00

CPC分类号： H01L21/0254 ,  H01S5/02

摘要： A nitride compound semiconductor element according to the present invention is a nitride compound semiconductor element including a substrate 1 having an upper face and a lower face and a semiconductor multilayer structure 40 supported by the upper face of the substrate 1, such that the substrate 1 and the semiconductor multilayer structure 40 have at least two cleavage planes. At least one cleavage inducing member 3 which is in contact with either one of the two cleavage planes is provided, and a size of the cleavage inducing member 3 along a direction parallel to the cleavage plane is smaller than a size of the upper face of the substrate 1 along the direction parallel to the cleavage plane.

摘要翻译： 根据本发明的氮化物化合物半导体元件是包括具有上表面和下表面的基板1和由基板1的上表面支撑的半导体多层结构40的氮化物化合物半导体元件，使得基板1和 半导体多层结构40具有至少两个解理面。 提供了与两个解理面中的任一个接触的至少一个切割诱导构件3，并且沿着与解理面平行的方向的切割诱导构件3的尺寸小于 衬底1沿着平行于解理面的方向。

公开(公告)号：US20070290230A1

公开(公告)日：2007-12-20

申请号：US10573211

申请日：2004-09-24

申请人： Yasutoshi Kawaguchi ,  Toshitaka Shimamoto ,  Akihiko Ishibashi ,  Isao Kidoguchi ,  Toshiya Yokogawa

发明人： Yasutoshi Kawaguchi ,  Toshitaka Shimamoto ,  Akihiko Ishibashi ,  Isao Kidoguchi ,  Toshiya Yokogawa

IPC分类号： H01L29/06 ,  H01L21/20

CPC分类号： H01S5/3215 ,  B82Y20/00 ,  H01L33/025 ,  H01L33/04 ,  H01L33/14 ,  H01L33/32 ,  H01S5/2009 ,  H01S5/22 ,  H01S5/2214 ,  H01S5/3054 ,  H01S5/3063 ,  H01S5/3072 ,  H01S5/3077 ,  H01S5/3213 ,  H01S5/3216 ,  H01S5/34333 ,  H01S2304/04

摘要： A nitride semiconductor device according to the present invention includes a p-type nitride semiconductor layer, an n-type nitride semiconductor layer, and an active layer interposed between the p-type nitride semiconductor layer and the n-type nitride semiconductor layer. The p-type nitride semiconductor layer includes: a first p-type nitride semiconductor layer containing Al and Mg; and a second p-type nitride semiconductor layer containing Mg. The first p-type nitride semiconductor layer is located between the active layer and the second p-type nitride semiconductor layer, and the second p-type nitride semiconductor layer has a greater band gap than a band gap of the first p-type nitride semiconductor layer.

摘要翻译： 根据本发明的氮化物半导体器件包括p型氮化物半导体层，n型氮化物半导体层和介于p型氮化物半导体层和n型氮化物半导体层之间的有源层。 p型氮化物半导体层包括：含有Al和Mg的第一p型氮化物半导体层; 以及包含Mg的第二p型氮化物半导体层。 第一p型氮化物半导体层位于有源层和第二p型氮化物半导体层之间，第二p型氮化物半导体层的带隙比第一p型氮化物半导体层的带隙大 层。

公开(公告)号：US20070195846A1

公开(公告)日：2007-08-23

申请号：US11790333

申请日：2007-04-25

申请人： Yoshiaki Hasegawa ,  Toshiya Yokogawa

发明人： Yoshiaki Hasegawa ,  Toshiya Yokogawa

IPC分类号： H01S5/00 ,  H01S3/04

CPC分类号： B82Y20/00 ,  H01S5/22 ,  H01S5/3072 ,  H01S5/321 ,  H01S5/3211 ,  H01S5/343 ,  H01S5/34333 ,  H01S2304/12

摘要： This specification relates to a semiconductor laser in which an n-type semiconductor layer (13), an active layer (101), and a p-type semiconductor layer (24) are stacked in this order on a substrate (11), the active layer (101) comprising a well layer composed of InGaN, the semiconductor laser comprising an intermediate layer (21) sandwiched between the active layer (101) and the p-type semiconductor layer (24), and the intermediate layer including no intentionally added impurities and being composed of a gallium nitride-based compound semiconductor. This semiconductor laser has an extended lifetime under high optical output power conditions.

公开(公告)号：US20060166478A1

公开(公告)日：2006-07-27

申请号：US10547968

申请日：2004-03-09

申请人： Gaku Sugahara ,  Yasutoshi Kawaguchi ,  Akihiko Ishibashi ,  Isao Kidoguchi ,  Toshiya Yokogawa

发明人： Gaku Sugahara ,  Yasutoshi Kawaguchi ,  Akihiko Ishibashi ,  Isao Kidoguchi ,  Toshiya Yokogawa

IPC分类号： H01L33/00 ,  H01L21/28 ,  H01L29/24 ,  H01L21/3205

CPC分类号： H01S5/227 ,  H01S5/0202 ,  H01S5/0421 ,  H01S5/2205 ,  H01S5/32341

摘要： A method for fabricating nitride semiconductor devices according to the present invention includes the steps of: (A) providing a nitride semiconductor substrate, which will be split into chip substrates, which includes device portions that will function as the respective chip substrates when the substrate is split and interdevice portions that connect the device portions together, and in which the average thickness of the interdevice portions is smaller than the thickness of the device portions; (B) defining a masking layer, which has striped openings over the device portions, on the upper surface of the nitride semiconductor substrate; (C) selectively growing nitride semiconductor layers on portions of the upper surface of the nitride semiconductor substrate, which are exposed through the openings of the masking layer; and (D) cleaving the nitride semiconductor substrate along the interdevice portions of the nitride semiconductor substrate, thereby forming nitride semiconductor devices on the respectively split chip substrates.

摘要翻译： 根据本发明的制造氮化物半导体器件的方法包括以下步骤：（A）提供将被分成芯片衬底的氮化物半导体衬底，其包括当衬底为基底时用作各个芯片衬底的器件部分 将装置部分连接在一起的分割和互连部分，并且其中，所述装置间部分的平均厚度小于所述装置部分的厚度; （B）在氮化物半导体衬底的上表面上限定在器件部分上具有条纹开口的掩模层; （C）在氮化物半导体衬底的上表面的通过掩模层的开口露出的部分上选择性地生长氮化物半导体层; 以及（D）沿着氮化物半导体衬底的间隙部分切割氮化物半导体衬底，从而在分别的芯片衬底上形成氮化物半导体器件。

公开(公告)号：US06864507B2

公开(公告)日：2005-03-08

申请号：US10459807

申请日：2003-06-12

申请人： Toshiya Yokogawa ,  Makoto Kitabatake ,  Osamu Kusumoto ,  Kunimasa Takahashi ,  Takeshi Uenoyama

发明人： Toshiya Yokogawa ,  Makoto Kitabatake ,  Osamu Kusumoto ,  Kunimasa Takahashi ,  Takeshi Uenoyama

IPC分类号： H01L21/04 ,  H01L29/10 ,  H01L29/24 ,  H01L29/36 ,  H01L29/772 ,  H01L29/78 ,  H01L31/0312

CPC分类号： H01L29/7813 ,  H01L21/0455 ,  H01L29/105 ,  H01L29/1608 ,  H01L29/365 ,  H01L29/66068 ,  H01L29/7725 ,  H01L29/78 ,  H01L29/7828 ,  H01L29/7838

摘要： P-type active region 12; n-type source/drain regions 13a and 13b; gate insulating film 14 made of a thermal oxide film; gate electrode 15; source/drain electrodes 16a and 16b, are provided over a p-type SiC substrate 11. In the active region 12, p-type heavily doped layers 12a, which are thin enough to create a quantum effect, and thick undoped layers 12b are alternately stacked. When carriers flow, scattering of impurity ions in the active region is reduced, and the channel mobility increases. In the OFF state, a depletion layer expands throughout the active region, and the breakdown voltage increases. As a result of reduction in charges trapped in the gate insulating film or near the interface between the gate insulating film and the active region, the channel mobility further increases.

摘要翻译： P型有源区12; n型源极/漏极区域13a和13b; 由热氧化膜制成的栅极绝缘膜14; 栅电极15; 源极/漏电极16a和16b设置在p型SiC衬底11上。在有源区12中，足够薄以产生量子效应的p型重掺杂层12a和厚的未掺杂层12b交替 堆叠 当载流子流动时，杂质离子在有源区中的散射减小，并且沟道迁移率增加。 在OFF状态下，耗尽层在整个有源区扩展，并且击穿电压增加。 由于栅极绝缘膜中俘获的电荷减少或栅极绝缘膜与有源区之间的界面附近的结果，沟道迁移率进一步增加。