公开(公告)号：US09853085B2

公开(公告)日：2017-12-26

申请号：US15109865

申请日：2015-01-14

Applicant: SONY CORPORATION

Inventor： Tsutomu Imoto ,  Keiji Mabuchi

IPC: H01L27/148 ,  H01L27/146

CPC classification number: H01L27/14887 ,  H01L27/14609 ,  H01L27/1461 ,  H01L27/14612 ,  H01L27/14627 ,  H01L27/1463 ,  H01L27/14636 ,  H01L27/1464 ,  H01L27/14643 ,  H01L27/14654 ,  H01L27/14656 ,  H01L27/14689 ,  H01L27/14812

Abstract: There is provided an imaging device that includes photovoltaic type pixels that have photoelectric conversion regions generating photovoltaic power for each pixel depending on irradiation light; and an element isolation region that is provided between the photoelectric conversion regions of adjacent pixels and in a state of substantially surrounding the photoelectric conversion region.

公开(公告)号：US20170221957A1

公开(公告)日：2017-08-03

申请号：US15490683

申请日：2017-04-18

Applicant: Sony Corporation

Inventor： Tsutomu Imoto ,  Keiji Mabuchi

IPC: H01L27/146

CPC classification number: H01L27/14887 ,  H01L27/14609 ,  H01L27/1461 ,  H01L27/14612 ,  H01L27/14627 ,  H01L27/1463 ,  H01L27/14636 ,  H01L27/1464 ,  H01L27/14643 ,  H01L27/14654 ,  H01L27/14656 ,  H01L27/14689 ,  H01L27/14812

Abstract: An imaging device includes: a photoelectric conversion region that generates photovoltaic power for each pixel depending on irradiation light; and a first element isolation region that is provided between adjacent photoelectric conversion regions in a state of surrounding the photoelectric conversion region.

公开(公告)号：US20170155858A1

公开(公告)日：2017-06-01

申请号：US15432565

申请日：2017-02-14

Applicant: Sony Corporation

Inventor： Keiji Mabuchi

IPC: H04N5/355 ,  H04N5/378 ,  H01L27/146 ,  H04N5/365 ,  H04N5/374 ,  H04N5/376 ,  H04N5/357 ,  H04N5/363

CPC classification number: H04N5/35563 ,  H01L27/14607 ,  H01L27/14621 ,  H01L27/14625 ,  H01L27/14627 ,  H01L27/1464 ,  H01L27/14641 ,  H01L27/14643 ,  H04N5/23229 ,  H04N5/3575 ,  H04N5/363 ,  H04N5/365 ,  H04N5/37213 ,  H04N5/3742 ,  H04N5/3765 ,  H04N5/378

Abstract: A solid-state imaging device includes a pixel array section and a signal processing section. The pixel array section is configured to include a plurality of arranged rectangular pixels, each of which has different sizes in the vertical and horizontal directions, and a plurality of adjacent ones of which are combined to form a square pixel having the same size in the vertical and horizontal directions. The signal processing section is configured to perform a process of outputting, as a single signal, a plurality of signals read out from the combined plurality of rectangular pixels.

公开(公告)号：US09635294B2

公开(公告)日：2017-04-25

申请号：US15272234

申请日：2016-09-21

Applicant: Sony Corporation

Inventor： Keiji Mabuchi

IPC: H04N5/335 ,  H04N5/3745 ,  H01L27/146 ,  H04N5/357 ,  H04N9/04

CPC classification number: H01L27/14605 ,  H01L27/14601 ,  H01L27/14603 ,  H01L27/14607 ,  H01L27/14609 ,  H01L27/1461 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/1463 ,  H01L27/14636 ,  H01L27/1464 ,  H01L27/14641 ,  H01L27/14643 ,  H01L27/14645 ,  H01L27/14689 ,  H01L31/035272 ,  H04N5/335 ,  H04N5/357 ,  H04N5/3575 ,  H04N5/3696 ,  H04N5/37455 ,  H04N5/37457 ,  H04N5/378 ,  H04N9/045

Abstract: A solid-state imaging device in which a pixel circuit formed on the first surface side of a semiconductor substrate is shared by a plurality of light reception regions and second surface side of the semiconductor substrate is the light incident side of the light reception regions. The second surface side regions of the light reception regions are arranged at approximately even intervals and the first surface side regions of the light reception regions e are arranged at uneven intervals. Respective second surface side regions and first surface side regions are joined in the semiconductor substrate so that the light reception regions extend from the second surface side to the first surface side of the semiconductor substrate.

公开(公告)号：US09560295B2

公开(公告)日：2017-01-31

申请号：US14996880

申请日：2016-01-15

Applicant: Sony Corporation

Inventor： Keiji Mabuchi

IPC: H04N5/361 ,  H01L27/146 ,  H04N5/359 ,  H04N5/367 ,  H04N5/3745 ,  H04N5/378 ,  H04N5/374

CPC classification number: H04N5/361 ,  H01L27/14632 ,  H04N5/359 ,  H04N5/367 ,  H04N5/374 ,  H04N5/3745 ,  H04N5/378

Abstract: A solid-state imaging device of a three-transistor pixel configuration having no selection transistor has a problem of a non-selection hot carrier white point, which is specific to this apparatus. A bias current during a non-reading period of pixels is made to flow to a pixel associated with an immediately previous selection pixel, for example, the immediately previous selection pixel itself. As a result, dark current only for one line occurs in each pixel, and the dark current for one line itself can be reduced markedly. Consequently, defective pixels due to non-selection hot carrier white points can be virtually eliminated.

Abstract translation: 没有选择晶体管的三晶体管像素配置的固态成像器件具有特定于该装置的非选择热载流子白点的问题。 像素的非读取周期期间的偏置电流流向与紧接在前的选择像素（例如，紧接在前的选择像素本身）相关联的像素。 结果，在每个像素中出现仅一行的暗电流，并且可以显着地减少一行本身的暗电流。 因此，可以实际上消除由于非选择热载体白点引起的缺陷像素。

公开(公告)号：US20170013223A1

公开(公告)日：2017-01-12

申请号：US15272234

申请日：2016-09-21

Applicant: Sony Corporation

Inventor： Keiji Mabuchi

IPC: H04N5/3745 ,  H04N5/357 ,  H04N9/04 ,  H01L27/146

CPC classification number: H01L27/14605 ,  H01L27/14601 ,  H01L27/14603 ,  H01L27/14607 ,  H01L27/14609 ,  H01L27/1461 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/1463 ,  H01L27/14636 ,  H01L27/1464 ,  H01L27/14641 ,  H01L27/14643 ,  H01L27/14645 ,  H01L27/14689 ,  H01L31/035272 ,  H04N5/335 ,  H04N5/357 ,  H04N5/3575 ,  H04N5/3696 ,  H04N5/37455 ,  H04N5/37457 ,  H04N5/378 ,  H04N9/045

Abstract: A solid-state imaging device in which a pixel circuit formed on the first surface side of a semiconductor substrate is shared by a plurality of light reception regions and second surface side of the semiconductor substrate is the light incident side of the light reception regions. The second surface side regions of the light reception regions are arranged at approximately even intervals and the first surface side regions of the light reception regions e are arranged at uneven intervals. Respective second surface side regions and first surface side regions are joined in the semiconductor substrate so that the light reception regions extend from the second surface side to the first surface side of the semiconductor substrate.

Abstract translation: 其中形成在半导体衬底的第一表面侧上的像素电路由多个光接收区域共享的半导体衬底的第二表面侧的固态成像器件是光接收区域的光入射侧。 光接收区域的第二表面侧区域以大致均匀的间隔布置，并且光​​接收区域e的第一表面侧区域以不均匀的间隔布置。 在半导体衬底中，相互的第二表面侧区域和第一表面侧区域接合，使得光接收区域从半导体衬底的第二表面侧延伸到第一表面侧。

公开(公告)号：US09530816B2

公开(公告)日：2016-12-27

申请号：US14610010

申请日：2015-01-30

Applicant: Sony Corporation

Inventor： Takashi Abe ,  Nobuo Nakamura ,  Keiji Mabuchi ,  Tomoyuki Umeda ,  Hiroaki Fujita ,  Eiichi Funatsu ,  Hiroki Sato

IPC: H01L27/146 ,  H01L23/544 ,  H01L31/0216 ,  H01L31/0232

CPC classification number: H01L27/14643 ,  H01L23/544 ,  H01L27/14603 ,  H01L27/14607 ,  H01L27/14609 ,  H01L27/14612 ,  H01L27/1462 ,  H01L27/14623 ,  H01L27/14625 ,  H01L27/14627 ,  H01L27/1463 ,  H01L27/14632 ,  H01L27/14636 ,  H01L27/1464 ,  H01L27/14683 ,  H01L27/14685 ,  H01L27/14687 ,  H01L31/02162 ,  H01L31/0232 ,  H01L31/02327 ,  H01L2223/54426 ,  H01L2223/54453 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Forming a back-illuminated type CMOS image sensor, includes process for formation of a registration mark on the wiring side of a silicon substrate during formation of an active region or a gate electrode. A silicide film using an active region may also be used for the registration mark. Thereafter, the registration mark is read from the back-side by use of red light or near infrared rays, and registration of the stepper is accomplished. It is also possible to form a registration mark in a silicon oxide film on the back-side (illuminated side) in registry with the registration mark on the wiring side, and to achieve the desired registration by use of the registration mark thus formed.

Abstract translation: 形成背照式CMOS图像传感器包括在形成有源区或栅电极期间在硅衬底的布线侧上形成配准标记的工艺。 使用活性区域的硅化物膜也可以用于配准标记。 此后，通过使用红光或近红外线从背面读取对准标记，并且完成步进机的配准。 也可以在背面（照射侧）的氧化硅膜上形成配准标记，与配线侧的配准标记对准，并且通过使用由此形成的配准标记来实现期望的配准。

公开(公告)号：US09521343B2

公开(公告)日：2016-12-13

申请号：US13852787

申请日：2013-03-28

Applicant: Sony Corporation

Inventor： Keiji Mabuchi ,  Eiichi Funatsu ,  Masanori Kasai

IPC: H04N5/378 ,  H04N5/355 ,  H04N5/365 ,  H04N5/374 ,  H04N5/376 ,  H04N5/372 ,  H04N5/225 ,  H04N5/369

CPC classification number: H04N5/378 ,  H04N5/2253 ,  H04N5/3559 ,  H04N5/365 ,  H04N5/3698 ,  H04N5/37213 ,  H04N5/374 ,  H04N5/376 ,  H04N5/3765

Abstract: A CMOS sensor has unit pixels each structured by a light receiving element and three transistors, to prevent against the phenomenon of saturation shading and the reduction of dynamic range. The transition time (fall time), in switching off the voltage on a drain line shared in all pixels, is given longer than the transition time in turning of any of the reset line and the transfer line. For this reason, the transistor constituting a DRN drive buffer is made proper in its W/L ratio. Meanwhile, a control resistance or current source is inserted on a line to the GND, to make proper the operation current during driving. This reduces saturation shading amount. By making a reset transistor in a depression type, the leak current to a floating diffusion is suppressed to broaden the dynamic range.

Abstract translation: CMOS传感器具有由光接收元件和三个晶体管构成的单位像素，以防止饱和阴影现象和动态范围的减小。 在关闭所有像素中共享的漏极线上的电压时，转换时间（下降时间）的长度大于转动任何复位线和传输线的转换时间。 因此，构成DRN驱动缓冲器的晶体管的W / L比是合适的。 同时，将控制电阻或电流源插入到GND的一条线上，以使驱动期间的操作电流正确。 这样可以减少饱和度遮蔽量。 通过使抑制型复位晶体管成为抑制浮动扩散的漏电流，扩大动态范围。

公开(公告)号：US20160343768A1

公开(公告)日：2016-11-24

申请号：US15225303

申请日：2016-08-01

Applicant: Sony Corporation

Inventor： Takashi Abe ,  Nobuo Nakamura ,  Keiji Mabuchi ,  Tomoyuki Umeda ,  Hiroaki Fujita ,  Eiichi Funatsu ,  Hiroki Sato

IPC: H01L27/146

CPC classification number: H01L27/14643 ,  H01L23/544 ,  H01L27/14603 ,  H01L27/14607 ,  H01L27/14609 ,  H01L27/14612 ,  H01L27/1462 ,  H01L27/14623 ,  H01L27/14625 ,  H01L27/14627 ,  H01L27/1463 ,  H01L27/14632 ,  H01L27/14636 ,  H01L27/1464 ,  H01L27/14683 ,  H01L27/14685 ,  H01L27/14687 ,  H01L31/02162 ,  H01L31/0232 ,  H01L31/02327 ,  H01L2223/54426 ,  H01L2223/54453 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Forming a back-illuminated type CMOS image sensor, includes process for formation of a registration mark on the wiring side of a silicon substrate during formation of an active region or a gate electrode. A silicide film using an active region may also be used for the registration mark. Thereafter, the registration mark is read from the back-side by use of red light or near infrared rays, and registration of the stepper is accomplished. It is also possible to form a registration mark in a silicon oxide film on the back-side (illuminated side) in registry with the registration mark on the wiring side, and to achieve the desired registration by use of the registration mark thus formed.

公开(公告)号：US09443897B2

公开(公告)日：2016-09-13

申请号：US14625179

申请日：2015-02-18

Applicant: Sony Corporation

Inventor： Ryoji Suzuki ,  Keiji Mabuchi ,  Tomonori Mori

IPC: H01L31/00 ,  H01L27/146 ,  H01L31/0216 ,  H01L31/0232

CPC classification number: H01L27/1464 ,  H01L27/14609 ,  H01L27/14621 ,  H01L27/14623 ,  H01L27/14627 ,  H01L27/14632 ,  H01L27/14643 ,  H01L27/14685 ,  H01L27/14687 ,  H01L27/14689 ,  H01L31/02164 ,  H01L31/0232 ,  H01L31/02327

Abstract: In an X-Y address type solid state image pickup device represented by a CMOS image sensor, a back side light reception type pixel structure is adopted in which a wiring layer is provided on one side of a silicon layer including photo-diodes formed therein. and visible light is taken in from the other side of the silicon layer, namely, from the side (back side) opposite to the wiring layer. wiring can be made without taking a light-receiving surface into account, and the degree of freedom in wiring for the pixels is enhanced.