公开(公告)号：US20180151596A1

公开(公告)日：2018-05-31

申请号：US15879506

申请日：2018-01-25

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Masahiro TAKAHASHI ,  Takuya HIROHASHI ,  Masashi TSUBUKU ,  Noritaka ISHIHARA ,  Masashi OOTA

IPC: H01L27/12 ,  H01L21/66 ,  G01N23/207 ,  G02F1/1368 ,  C23C14/08 ,  H01L29/04 ,  H01L29/24 ,  H01L29/66 ,  H01L29/786 ,  H01L21/02

Abstract: A metal oxide film including a crystal part and having highly stable physical properties is provided. The size of the crystal part is less than or equal to 10 nm, which allows the observation of circumferentially arranged spots in a nanobeam electron diffraction pattern of the cross section of the metal oxide film when the measurement area is greater than or equal to 5 nmφ and less than or equal to 10 nφ.

公开(公告)号：US20180102536A1

公开(公告)日：2018-04-12

申请号：US15726520

申请日：2017-10-06

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Takahiro KAWAKAMI ,  Teruaki OCHIAI ,  Yohei MOMMA ,  Ayae TSURUTA ,  Masahiro TAKAHASHI ,  Mayumi MIKAMI

IPC: H01M4/36 ,  H01M4/525 ,  H01M10/0525 ,  H01M4/505 ,  H01M4/62 ,  H01G11/60 ,  H01G11/50

CPC classification number: H01M4/366 ,  H01G11/24 ,  H01G11/50 ,  H01G11/60 ,  H01G11/86 ,  H01M4/0471 ,  H01M4/505 ,  H01M4/525 ,  H01M4/62 ,  H01M4/628 ,  H01M10/0525 ,  H01M2004/028

Abstract: Provided is a positive electrode active material which suppresses a reduction in capacity due to charge and discharge cycles when used in a lithium ion secondary battery. A covering layer is formed by segregation on a superficial portion of the positive electrode active material. The positive electrode active material includes a first region and a second region. The first region exists in an inner portion of the positive electrode active material. The second region exists in a superficial portion of the positive electrode active material and part of the inner portion thereof. The first region includes lithium, a transition metal, and oxygen. The second region includes magnesium, fluorine, and oxygen.

公开(公告)号：US20170309754A1

公开(公告)日：2017-10-26

申请号：US15648943

申请日：2017-07-13

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Masashi TSUBUKU ,  Kengo AKIMOTO ,  Hiroki OHARA ,  Tatsuya HONDA ,  Takatsugu OMATA ,  Yusuke NONAKA ,  Masahiro TAKAHASHI ,  Akiharu MIYANAGA

IPC: H01L29/786 ,  H01L29/24 ,  H01L29/04 ,  H01L29/10

CPC classification number: H01L29/78696 ,  H01L29/045 ,  H01L29/1033 ,  H01L29/247 ,  H01L29/7869 ,  H01L29/78693

Abstract: An oxide semiconductor film which has more stable electric conductivity is provided. The oxide semiconductor film comprises a crystalline region. The oxide semiconductor film has a first peak of electron diffraction intensity with a full width at half maximum of greater than or equal to 0.4 nm−1 and less than or equal to 0.7 nm−1 in a region where a magnitude of a scattering vector is greater than or equal to 3.3 nm−1 and less than or equal to 4.1 nm−1. The oxide semiconductor film has a second peak of electron diffraction intensity with a full width at half maximum of greater than or equal to 0.45 nm−1 and less than or equal to 1.4 nm−1 in a region where a magnitude of a scattering vector is greater than or equal to 5.5 nm−1 and less than or equal to 7.1 nm−1.

公开(公告)号：US20170047537A1

公开(公告)日：2017-02-16

申请号：US15339016

申请日：2016-10-31

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Satoko SHITAGAKI ,  Satoshi SEO ,  Nobuharu OHSAWA ,  Hideko INOUE ,  Masahiro TAKAHASHI ,  Kunihiko SUZUKI

IPC: H01L51/50 ,  C09K11/02 ,  C09K11/06 ,  H01L51/52

CPC classification number: H01L51/5016 ,  C09K11/025 ,  C09K11/06 ,  C09K2211/1007 ,  C09K2211/1044 ,  C09K2211/185 ,  H01L51/0052 ,  H01L51/0056 ,  H01L51/0058 ,  H01L51/006 ,  H01L51/0061 ,  H01L51/0072 ,  H01L51/0074 ,  H01L51/0085 ,  H01L51/5056 ,  H01L51/5072 ,  H01L51/5088 ,  H01L51/5092 ,  H01L51/5218 ,  H01L51/5234 ,  H01L2251/55 ,  H05B33/14

Abstract: Provided is a light-emitting element with high external quantum efficiency, or a light-emitting element with a long lifetime. The light-emitting element includes, between a pair of electrodes, a light-emitting layer including a guest material and a host material, in which an emission spectrum of the host material overlaps with an absorption spectrum of the guest material, and phosphorescence is emitted by conversion of an excitation energy of the host material into an excitation energy of the guest material. By using the overlap between the emission spectrum of the host material and the absorption spectrum of the guest material, the energy smoothly transfers from the host material to the guest material, so that the energy transfer efficiency of the light-emitting element is high. Accordingly, a light-emitting element with high external quantum efficiency can be achieved.

Abstract translation: 提供具有高外部量子效率的发光元件或具有长寿命的发光元件。 发光元件在一对电极之间包括包含客体材料的发光层和主体材料，其中主体材料的发射光谱与客体材料的吸收光谱重叠，并且发射磷光 通过将主体材料的激发能转化为客体材料的激发能量。 通过使用主体材料的发射光谱和客体材料的吸收光谱之间的重叠，能量从主体材料平滑地转移到客体材料，使得发光元件的能量传递效率高。 因此，可以实现具有高外部量子效率的发光元件。

公开(公告)号：US20160351721A1

公开(公告)日：2016-12-01

申请号：US15232896

申请日：2016-08-10

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Akiharu MIYANAGA ,  Yasuharu HOSAKA ,  Toshimitsu OBONAI ,  Junichi KOEZUKA ,  Motoki NAKASHIMA ,  Masahiro TAKAHASHI ,  Shunsuke ADACHI ,  Takuya HIROHASHI

IPC: H01L29/786 ,  H01L27/12 ,  H01L29/66 ,  H01L29/04 ,  H01L29/24

CPC classification number: H01L29/78606 ,  H01L27/1225 ,  H01L29/045 ,  H01L29/24 ,  H01L29/4908 ,  H01L29/66969 ,  H01L29/7869 ,  H01L29/78696

Abstract: In a semiconductor device using a transistor including an oxide semiconductor, a change in electrical characteristics is suppressed and reliability is improved. The semiconductor device includes a gate electrode over an insulating surface; an oxide semiconductor film overlapping with the gate electrode; a gate insulating film that is between the gate electrode and the oxide semiconductor film and in contact with the oxide semiconductor film; a protective film in contact with a surface of the oxide semiconductor film that is an opposite side of a surface in contact with the gate insulating film; and a pair of electrodes in contact with the oxide semiconductor film. The spin density of the gate insulating film or the protective film measured by electron spin resonance spectroscopy is lower than 1×1018 spins/cm3, preferably higher than or equal to 1×1017 spins/cm3 and lower than 1×1018 spins/cm3.

公开(公告)号：US20160190232A1

公开(公告)日：2016-06-30

申请号：US15063733

申请日：2016-03-08

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Masahiro TAKAHASHI ,  Takuya HIROHASHI ,  Masashi TSUBUKU ,  Masashi OOTA

IPC: H01L29/04 ,  H01L29/26 ,  H01L29/786

CPC classification number: H01L29/04 ,  H01L29/045 ,  H01L29/24 ,  H01L29/247 ,  H01L29/26 ,  H01L29/7869 ,  H01L29/78693

Abstract: A highly reliable semiconductor device including an oxide semiconductor is provided. Provided is a semiconductor device including an oxide semiconductor layer, an insulating layer in contact with the oxide semiconductor layer, a gate electrode layer overlapping with the oxide semiconductor layer, and a source electrode layer and a drain electrode layer electrically connected to the oxide semiconductor layer. The oxide semiconductor layer includes a first region having a crystal whose size is less than or equal to 10 nm and a second region which overlaps with the insulating layer with the first region provided therebetween and which includes a crystal part whose c-axis is aligned in a direction parallel to a normal vector of the surface of the oxide semiconductor layer.

公开(公告)号：US20160049520A1

公开(公告)日：2016-02-18

申请号：US14924857

申请日：2015-10-28

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Jun KOYAMA ,  Masahiro TAKAHASHI ,  Hideyuki KISHIDA ,  Akiharu MIYANAGA ,  Junpei SUGAO ,  Hideki UOCHI ,  Yasuo NAKAMURA

IPC: H01L29/786

CPC classification number: H01L29/7869 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02631 ,  H01L21/324 ,  H01L21/76801 ,  H01L21/76828 ,  H01L21/76838 ,  H01L27/1225 ,  H01L27/124 ,  H01L29/24 ,  H01L29/42384 ,  H01L29/45 ,  H01L29/4908 ,  H01L29/66742 ,  H01L29/66969 ,  H01L29/78606

Abstract: By using a conductive layer including Cu as a long lead wiring, increase in wiring resistance is suppressed. Further, the conductive layer including Cu is provided in such a manner that it does not overlap with the oxide semiconductor layer in which a channel region of a TFT is formed, and is surrounded by insulating layers including silicon nitride, whereby diffusion of Cu can be prevented; thus, a highly reliable semiconductor device can be manufactured. Specifically, a display device which is one embodiment of a semiconductor device can have high display quality and operate stably even when the size or definition thereof is increased.

Abstract translation: 通过使用包含Cu的导电层作为长引线，可以抑制布线电阻的增加。 此外，包括Cu的导电层以与形成TFT的沟道区域的氧化物半导体层不重叠并被包括氮化硅的绝缘层包围的方式设置，由此Cu的扩散可以 防止 因此，可以制造高度可靠的半导体器件。 具体地说，作为半导体装置的一个实施方式的显示装置，即使在尺寸或定义增加的情况下也能够具有高的显示质量，并且稳定地工作。

公开(公告)号：US20160043231A1

公开(公告)日：2016-02-11

申请号：US14920244

申请日：2015-10-22

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Junichi KOEZUKA ,  Shinji OHNO ,  Yuichi SATO ,  Masahiro TAKAHASHI ,  Hideyuki KISHIDA

IPC: H01L29/786 ,  H01L29/04 ,  H01L27/12

CPC classification number: H01L29/7869 ,  H01L27/1225 ,  H01L29/045 ,  H01L29/66969 ,  H01L29/78693 ,  H01L29/78696

Abstract: The semiconductor device includes an oxide semiconductor film having a first region and a pair of second regions facing each other with the first region provided therebetween, a gate insulating film over the oxide semiconductor film, and a first electrode overlapping with the first region, over the gate insulating film. The first region is a non-single-crystal oxide semiconductor region including a c-axis-aligned crystal portion. The pair of second regions is an oxide semiconductor region containing dopant and including a plurality of crystal portions.

Abstract translation: 半导体器件包括具有第一区域和一对第二区域的氧化物半导体膜，第一区域和第二区域彼此面对，其间设置有第一区域，氧化物半导体膜上的栅极绝缘膜和与第一区域重叠的第一电极， 栅极绝缘膜。 第一区域是包括c轴取向晶体部分的非单晶氧化物半导体区域。 所述一对第二区域是含有掺杂剂且包含多个晶体部分的氧化物半导体区域。

公开(公告)号：US20160005877A1

公开(公告)日：2016-01-07

申请号：US14851119

申请日：2015-09-11

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Masahiro TAKAHASHI ,  Tatsuya HONDA ,  Takehisa HATANO

IPC: H01L29/786 ,  H01L29/24

CPC classification number: H01L29/7869 ,  H01L29/24 ,  H01L29/78618

Abstract: Provided is a structure of a transistor, which enables a so-called normally-off switching element, and a manufacturing method thereof. Provided is a structure of a semiconductor device which achieves high-speed response and high-speed operation by improving on characteristics of a transistor, and a manufacturing method thereof. Provided is a highly reliable semiconductor device. In the transistor in which a semiconductor layer, source and drain electrode layers, a gate insulating layer, and a gate electrode layer are stacked in that order. As the semiconductor layer, an oxide semiconductor layer which contains at least four kinds of elements of indium, gallium, zinc, and oxygen, and has a composition ratio (atomic percentage) of indium as twice or more as a composition ratio of gallium and a composition ratio of zinc, is used.

公开(公告)号：US20150294994A1

公开(公告)日：2015-10-15

申请号：US14688232

申请日：2015-04-16

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Masahiro TAKAHASHI ,  Takuya HIROHASHI ,  Masashi TSUBUKU ,  Noritaka ISHIHARA ,  Masashi OOTA

IPC: H01L27/12

CPC classification number: H01L27/1225 ,  C23C14/086 ,  G01N23/207 ,  G02F1/1368 ,  H01L21/0237 ,  H01L21/02422 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02631 ,  H01L22/12 ,  H01L29/04 ,  H01L29/24 ,  H01L29/66969 ,  H01L29/7869 ,  H01L29/78693 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A metal oxide film including a crystal part and having highly stable physical properties is provided. The size of the crystal part is less than or equal to 10 nm, which allows the observation of circumferentially arranged spots in a nanobeam electron diffraction pattern of the cross section of the metal oxide film when the measurement area is greater than or equal to 5 nmφ and less than or equal to 10 nmφ.

Abstract translation: 提供了包括晶体部分并且具有高度稳定的物理性质的金属氧化物膜。 晶体部分的尺寸小于或等于10nm，这允许在测量面积大于或等于5nm＆phgr时观察金属氧化物膜横截面的纳米束电子衍射图中的周向排列的斑点 ; 小于等于10nm。