公开(公告)号：US20170301625A1

公开(公告)日：2017-10-19

申请号：US15636117

申请日：2017-06-28

Applicant: Intel Corporation

Inventor： Ravindranath V. Mahajan ,  Christopher J. Nelson ,  Omkar G. Karhade ,  Feras Eid ,  Nitin A. Deshpande ,  Shawna M. Liff

IPC: H01L23/538 ,  H01L23/31 ,  H01L23/367 ,  H01L25/065

CPC classification number: H01L23/5381 ,  H01L21/563 ,  H01L21/568 ,  H01L23/145 ,  H01L23/3114 ,  H01L23/3128 ,  H01L23/367 ,  H01L23/3675 ,  H01L23/4334 ,  H01L23/49816 ,  H01L23/49827 ,  H01L23/5389 ,  H01L24/16 ,  H01L24/17 ,  H01L24/19 ,  H01L24/24 ,  H01L24/73 ,  H01L24/81 ,  H01L24/92 ,  H01L25/0657 ,  H01L25/165 ,  H01L25/50 ,  H01L2224/0401 ,  H01L2224/04105 ,  H01L2224/12105 ,  H01L2224/16145 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2224/16265 ,  H01L2224/17181 ,  H01L2224/24145 ,  H01L2224/24245 ,  H01L2224/291 ,  H01L2224/29109 ,  H01L2224/29111 ,  H01L2224/29113 ,  H01L2224/29116 ,  H01L2224/2912 ,  H01L2224/29139 ,  H01L2224/29144 ,  H01L2224/2919 ,  H01L2224/32225 ,  H01L2224/32245 ,  H01L2224/73209 ,  H01L2224/73253 ,  H01L2224/73259 ,  H01L2224/73267 ,  H01L2224/81005 ,  H01L2224/92124 ,  H01L2224/92224 ,  H01L2224/92242 ,  H01L2224/92244 ,  H01L2225/06513 ,  H01L2225/06517 ,  H01L2225/06541 ,  H01L2225/06565 ,  H01L2924/12042 ,  H01L2924/1432 ,  H01L2924/1433 ,  H01L2924/1434 ,  H01L2924/15192 ,  H01L2924/181 ,  H01L2924/18161 ,  H01L2924/18162 ,  H01L2924/19041 ,  H01L2924/19042 ,  H01L2924/19043 ,  H01L2924/19104 ,  H01L2924/014 ,  H01L2924/00 ,  H01L2924/0665

Abstract: Embodiments of the present disclosure are directed towards an integrated circuit (IC) package having first and second dies with first and second input/output (I/O) interconnect structures, respectively. The IC package may include a bridge having first and second electrical routing features coupled to a portion of the first and second I/O interconnect structures, respectively. In embodiments, the first and second electrical routing features may be disposed on one side of the bridge; and third electrical routing features may be disposed on an opposite side. The first and second electrical routing features may be configured to route electrical signals between the first die and the second die and the third electrical routing features may be configured to route electrical signals between the one side and the opposite side. The first die, the second die, and the bridge may be embedded in electrically insulating material. Other embodiments may be described and/or claimed.

公开(公告)号：US12199067B2

公开(公告)日：2025-01-14

申请号：US17222815

申请日：2021-04-05

Applicant: Intel Corporation

Inventor： Adel A. Elsherbini ,  Henning Braunisch ,  Javier Soto Gonzalez ,  Shawna M. Liff

IPC: H01L23/00 ,  H01L23/538 ,  H01L25/065

Abstract: An embedded silicon bridge system including tall interconnect via pillars is part of a system in package device. The tall via pillars may span a Z-height distance to a subsequent bond pad from a bond pad that is part of an organic substrate that houses the embedded silicon bridge.

公开(公告)号：US12183961B2

公开(公告)日：2024-12-31

申请号：US17403571

申请日：2021-08-16

Applicant: Intel Corporation

Inventor： Aleksandar Aleksov ,  Georgios C. Dogiamis ,  Telesphor Kamgaing ,  Sasha N. Oster ,  Adel A. Elsherbini ,  Shawna M. Liff ,  Johanna M. Swan ,  Brandon M. Rawlings ,  Richard J. Dischler

IPC: H01P3/16 ,  H01P3/12 ,  H01P11/00 ,  H01Q9/04 ,  H04L67/10

Abstract: A method of forming a waveguide comprises forming an elongate waveguide core including a dielectric material; and arranging a conductive sheet around an outside surface of the dielectric core to produce a conductive layer around the waveguide core.

公开(公告)号：US20240339410A1

公开(公告)日：2024-10-10

申请号：US18746188

申请日：2024-06-18

Applicant: Intel Corporation

Inventor： Aleksandar Aleksov ,  Adel A. Elsherbini ,  Shawna M. Liff ,  Johanna M. Swan ,  Feras Eid ,  Randy B. Osborne ,  Van H. Le

IPC: H01L23/538 ,  H01L23/49 ,  H01L25/065

CPC classification number: H01L23/5384 ,  H01L23/49 ,  H01L23/5385 ,  H01L23/5386 ,  H01L25/0657

Abstract: Disclosed herein are microelectronic assemblies including microelectronic components that are coupled together by direct bonding, as well as related structures and techniques. For example, in some embodiments, a microelectronic assembly may include a first microelectronic component, including an organic dielectric material; a second microelectronic component coupled to the first microelectronic component by a direct bonding region, wherein the direct bonding region includes metal contacts and a dielectric material between adjacent ones of the metal contacts, and wherein the dielectric material includes an inorganic dielectric material; and a third microelectronic component coupled to the first microelectronic component by wire bonding or solder.

公开(公告)号：US12107060B2

公开(公告)日：2024-10-01

申请号：US17025843

申请日：2020-09-18

Applicant: Intel Corporation

Inventor： Adel A. Elsherbini ,  Zhiguo Qian ,  Gerald S. Pasdast ,  Mohammad Enamul Kabir ,  Han Wui Then ,  Kimin Jun ,  Kevin P. O'Brien ,  Johanna M. Swan ,  Shawna M. Liff ,  Aleksandar Aleksov ,  Feras Eid

IPC: H01L23/00 ,  H01L25/065 ,  H01L49/02

CPC classification number: H01L24/08 ,  H01L24/05 ,  H01L24/29 ,  H01L24/32 ,  H01L25/0657 ,  H01L28/10 ,  H01L2224/05147 ,  H01L2224/05639 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/0801 ,  H01L2224/08145 ,  H01L2224/0903 ,  H01L2224/09055 ,  H01L2224/29186 ,  H01L2224/32145

Abstract: Disclosed herein are microelectronic assemblies including microelectronic components that are coupled together by direct bonding, as well as related structures and techniques. For example, in some embodiments, a microelectronic assembly may include a first microelectronic component and a second microelectronic component coupled to the first microelectronic component by a direct bonding region, wherein the direct bonding region includes at least part of an inductor.

公开(公告)号：US12080652B2

公开(公告)日：2024-09-03

申请号：US18216102

申请日：2023-06-29

Applicant: Intel Corporation

Inventor： Adel A. Elsherbini ,  Amr Elshazly ,  Arun Chandrasekhar ,  Shawna M. Liff ,  Johanna M. Swan

IPC: H01L23/52 ,  H01L23/00 ,  H01L23/538 ,  H01L25/00

CPC classification number: H01L23/5385 ,  H01L24/16 ,  H01L24/17 ,  H01L25/00 ,  H01L2224/16225 ,  H01L2224/1703

Abstract: Microelectronic assemblies, and related devices and methods, are disclosed herein. For example, in some embodiments, a microelectronic assembly may include a package substrate, a first die coupled to the package substrate with first interconnects, and a second die coupled to the first die with second interconnects, wherein the second die is coupled to the package substrate with third interconnects, a communication network is at least partially included in the first die and at least partially included in the second die, and the communication network includes a communication pathway between the first die and the second die.

公开(公告)号：US11990448B2

公开(公告)日：2024-05-21

申请号：US17025709

申请日：2020-09-18

Applicant: Intel Corporation

Inventor： Feras Eid ,  Adel A. Elsherbini ,  Aleksandar Aleksov ,  Shawna M. Liff ,  Johanna M. Swan

IPC: H01L25/065 ,  H01L23/00

CPC classification number: H01L25/0655 ,  H01L24/06 ,  H01L24/08 ,  H01L24/09 ,  H01L24/17 ,  H01L24/29 ,  H01L24/30 ,  H01L25/0652 ,  H01L2224/08225 ,  H01L2224/09177 ,  H01L2224/81

Abstract: Disclosed herein are microelectronic assemblies including direct bonding, as well as related structures and techniques. For example, in some embodiments, a microelectronic assembly may include a first microelectronic component and a second microelectronic component coupled to the first microelectronic component by a direct bonding region, wherein the direct bonding region includes a first subregion and a second subregion, and the first subregion has a greater metal density than the second subregion. In some embodiments, a microelectronic assembly may include a first microelectronic component and a second microelectronic component coupled to the first microelectronic component by a direct bonding region, wherein the direct bonding region includes a first metal contact and a second metal contact, the first metal contact has a larger area than the second metal contact, and the first metal contact is electrically coupled to a power/ground plane of the first microelectronic component.

公开(公告)号：US11916020B2

公开(公告)日：2024-02-27

申请号：US17514528

申请日：2021-10-29

Applicant: Intel Corporation

Inventor： Adel A. Elsherbini ,  Amr Elshazly ,  Arun Chandrasekhar ,  Shawna M. Liff ,  Johanna M. Swan

IPC: H01L21/00 ,  H01L23/538 ,  H01L23/00 ,  H01L25/00

CPC classification number: H01L23/5385 ,  H01L24/16 ,  H01L24/17 ,  H01L25/00 ,  H01L2224/16225 ,  H01L2224/1703

Abstract: Microelectronic assemblies, and related devices and methods, are disclosed herein. For example, in some embodiments, a microelectronic assembly may include a package substrate, a first die coupled to the package substrate with first interconnects, and a second die coupled to the first die with second interconnects, wherein the second die is coupled to the package substrate with third interconnects, a communication network is at least partially included in the first die and at least partially included in the second die, and the communication network includes a communication pathway between the first die and the second die.

公开(公告)号：US20240063202A1

公开(公告)日：2024-02-22

申请号：US17820968

申请日：2022-08-19

Applicant: Intel Corporation

Inventor： Adel A. Elsherbini ,  Thomas Sounart ,  Henning Braunisch ,  William J. Lambert ,  Kaladhar Radhakrishnan ,  Shawna M. Liff ,  Mohammad Enamul Kabir ,  Omkar G. Karhade ,  Kimin Jun ,  Johanna M. Swan

IPC: H01L25/18 ,  H01L23/522 ,  H01L49/02 ,  H01L23/00 ,  H01L23/498 ,  H01L23/48 ,  H01L25/00

CPC classification number: H01L25/18 ,  H01L23/5223 ,  H01L28/90 ,  H01L24/08 ,  H01L23/49811 ,  H01L23/481 ,  H01L25/50 ,  H01L24/80 ,  H01L2224/08145 ,  H01L2224/80895 ,  H01L2224/80896

Abstract: Embodiments of a microelectronic assembly comprise: a plurality of layers of IC dies in a dielectric material, adjacent layers in the plurality of layers being coupled together by first interconnects having a pitch of less than 10 micrometers between adjacent first interconnects; a package substrate coupled to a first side of the plurality of layers by second interconnects; a support structure coupled to a second side of the plurality of layers by third interconnects, the second side being opposite to the first side; and capacitors in at least the plurality of layers or the support structure. The capacitors are selected from at least planar capacitors, deep trench capacitors and via capacitors.

公开(公告)号：US11901330B2

公开(公告)日：2024-02-13

申请号：US18086308

申请日：2022-12-21

Applicant: Intel Corporation

Inventor： Shawna M. Liff ,  Adel A. Elsherbini ,  Johanna M. Swan ,  Arun Chandrasekhar

IPC: H01L23/00 ,  H01L25/18 ,  H01L25/00

CPC classification number: H01L24/81 ,  H01L24/16 ,  H01L24/17 ,  H01L25/18 ,  H01L25/50 ,  H01L2224/16145 ,  H01L2224/16227 ,  H01L2224/1703 ,  H01L2224/17181 ,  H01L2224/17505 ,  H01L2224/81005 ,  H01L2224/81192 ,  H01L2924/15153

Abstract: Microelectronic assemblies, and related devices and methods, are disclosed herein. For example, in some embodiments, a microelectronic assembly may include a package substrate having a first surface and an opposing second surface, and a die secured to the package substrate, wherein the die has a first surface and an opposing second surface, the die has first conductive contacts at the first surface and second conductive contacts at the second surface, and the first conductive contacts are coupled to conductive pathways in the package substrate by first non-solder interconnects.