-
公开(公告)号：US20170166435A1
公开(公告)日：2017-06-15
申请号：US15441791
申请日：2017-02-24
Inventor： Chia-Hua Chu , Kuei-Sung Chang , Chung-Hsien Lin
CPC classification number: B81B3/0005 , B81B3/001 , B81B7/007 , B81B2201/0235 , B81B2201/0242 , B81B2207/012 , B81B2207/07 , B81B2207/092 , B81B2207/095 , B81B2207/096 , B81C1/00269 , B81C1/00579 , B81C2201/0111 , B81C2201/014 , B81C2201/0176 , B81C2203/0118 , B81C2203/019
Abstract: A method for forming a MEMS structure includes forming, on a MEMS substrate, an interconnect structure having conductive lines and a first conductive plug of a semiconductor material, forming an etch stop layer on the interconnect structure, forming a dielectric layer over the etch stop layer, bonding a silicon substrate over the dielectric layer, forming a second and third conductive plugs of the semiconductor material in the silicon substrate, wherein the second conductive plug is configured to be electrically coupled with the first conductive plug and third conductive plug is configured to function as an anti-stiction bump, forming a MEMS device electrically coupled with the second conductive feature, and forming a bonding pad on the silicon substrate and surrounded by the second conductive plug.
-
公开(公告)号：US20170081183A1
公开(公告)日：2017-03-23
申请号：US15311354
申请日：2015-05-29
Applicant: Robert Bosch GmbH
Inventor： Simon Armbruster , Rainer Straub , Stefan Pinter , Ralf Hausner , Dietmar Haberer , Johannes Baader
CPC classification number: B81C1/00801 , B81B7/0025 , B81B2201/042 , B81B2203/0163 , B81C3/001 , B81C2201/014 , B81C2203/0145 , G02B26/0833
Abstract: A micromechanical layer system, having at least two mechanically active functional layers patterned independently of each other, which are arranged vertically one on top of the other and are functionally coupled to each other.
-
143.发明申请Membrane-Based Sensor and Method for Robust Manufacture of a Membrane-Based Sensor 审中-公开基于膜的传感器和用于坚固制造膜基传感器的方法公开(公告)号：US20170023426A1
公开(公告)日：2017-01-26
申请号：US15301226
申请日：2015-04-03
Applicant: Ando Lars FEYH , Gary O'BRIEN , Robert Bosch GmbH
Inventor： Ando Lars Feyh , Gary O'Brien
IPC: G01L9/00
CPC classification number: G01L9/0047 , B81B3/0072 , B81B2201/0257 , B81B2201/0264 , B81C2201/014 , G01L9/0048 , G01L9/0073 , G01L19/04 , G01L19/06 , H04R19/005 , H04R19/04 , H04R31/00
Abstract: A membrane-based sensor in one embodiment includes a membrane layer including an upper surface and a lower surface, a backside trench defined on one side by the lower surface, a central cavity defined on a first side by the upper surface, a cap layer positioned above the central cavity, and a first spacer extending from the upper surface to the cap layer and integrally formed with the cap layer, the first spacer defining a second side of the central cavity and an inner membrane portion of the membrane layer.
Abstract translation: 一个实施例中的膜基传感器包括一个膜层，包括一个上表面和一个下表面，一个侧面由下表面限定的一个背面沟槽，一个由上表面限定在第一面上的中心腔， 以及从所述上表面延伸到所述盖层并与所述盖层一体形成的第一间隔件，所述第一间隔件限定所述中心腔的第二侧和所述膜层的内膜部分。
-
公开(公告)号：US20170001860A1
公开(公告)日：2017-01-05
申请号：US15268282
申请日：2016-09-16
Inventor： Chia-Hua Chu , Chun-Wen Cheng , Te-Hao Lee , Chung-Hsien Lin
CPC classification number: B81B7/0064 , B81B2203/04 , B81B2207/012 , B81B2207/07 , B81C1/00238 , B81C2201/014 , B81C2203/0792 , H01L24/18 , H01L29/84 , H01L2924/01322 , H01L2924/1461 , H01L2924/15787 , H01L2924/00
Abstract: A device includes a carrier having a plurality of cavities, a micro-electro-mechanical system (MEMS) substrate bonded on the carrier, wherein the MEMS substrate comprises a shielding layer on the carrier and coupled to ground, a plurality of vias coupled between the shielding layer and a bottom electrode of the MEMS substrate and a moving element over the bottom electrode and a semiconductor substrate bonded on the MEMS substrate, wherein the semiconductor substrate comprises a top electrode, and wherein the moving element is between the top electrode and the bottom electrode.
Abstract translation: 一种器件包括具有多个空腔的载体，键合在载体上的微电子机械系统（MEMS）衬底，其中MEMS衬底包括载体上的屏蔽层并耦合到接地，多个通孔耦合在 屏蔽层和MEMS衬底的底部电极以及底部电极上的移动元件和结合在MEMS衬底上的半导体衬底，其中半导体衬底包括顶部电极，并且其中移动元件位于顶部电极和底部电极之间 电极。
-
145.发明申请SILICON-BASED COMPONENT WITH AT LEAST ONE CHAMFER AND ITS FABRICATION METHOD 审中-公开基于硅的组件与至少一个切割器及其制造方法公开(公告)号：US20160378064A1
公开(公告)日：2016-12-29
申请号：US15171012
申请日：2016-06-02
Applicant: Nivarox-FAR S.A.
Inventor： Alex GANDELHMAN
CPC classification number: G04D99/00 , B81B2201/035 , B81B2203/0384 , B81C1/00103 , B81C2201/0132 , B81C2201/0138 , B81C2201/014 , C23F1/00
Abstract: The invention relates to a silicon-based component with at least one chamfer formed from a method combining at least one oblique side wall etching step with a “Bosch” etching of vertical side walls, thereby enabling aesthetic improvement and improvement in the mechanical strength of components formed by micromachining a silicon-based wafer.
Abstract translation: 本发明涉及一种具有至少一个倒角的硅基组件，该方法将至少一个倾斜侧壁蚀刻步骤与垂直侧壁的“博世”蚀刻相结合，从而使得美观改进和组件的机械强度得到改善 通过微加工硅基晶片形成。
-
Patent Agency Ranking
146.发明授权Device comprising a spring and an element suspended thereon, and method for manufacturing same 有权包括弹簧和悬挂在其上的元件的装置及其制造方法公开(公告)号：US09399573B2
公开(公告)日：2016-07-26
申请号：US14280154
申请日：2014-05-16
Inventor： Shanshan Gu-Stoppel , Hans Joachim Quenzer , Ulrich Hofmann
CPC classification number: B81B3/0027 , B81B3/0029 , B81B2201/042 , B81B2203/0109 , B81B2203/0163 , B81C1/00357 , B81C1/00626 , B81C2201/014 , H01L29/84
Abstract: The invention relates to an MEMS structure with a stack made of different layers and a spring-and-mass system varying in its thickness which is formed of the stack, and wherein, starting from a back side of the stack and the substrate, at laterally different positions, the substrate while leaving the first semiconductor layer, or the substrate, the first etch-stop layer and the first semiconductor layer are removed, and to a method for manufacturing such a structure.
Abstract translation: 本发明涉及一种具有由不同层组成的叠层的MEMS结构，以及由堆叠形成的其厚度变化的弹簧和质量系统，并且其中，从堆叠和衬底的背侧开始，在侧向 不同的位置，离开第一半导体层的衬底，或衬底，第一蚀刻停止层和第一半导体层被去除，以及制造这种结构的方法。
-
147.发明申请MICROFLUIDIC DEVICES FOR THE GENERATION OF NANO-VAPOR BUBBLES AND THEIR METHODS OF MANUFACTURE AND USE 审中-公开用于生产纳米蒸汽泡的微流体装置及其制造和使用方法公开(公告)号：US20160207040A1
公开(公告)日：2016-07-21
申请号：US14830059
申请日：2015-08-19
Applicant: University of South Carolina
Inventor： Chen Li , Fanhao Yang , Xianming Dai , Yan Tong
CPC classification number: B01L3/502707 , B01J19/0093 , B01J2219/00783 , B01J2219/00828 , B01J2219/00835 , B01J2219/00846 , B01J2219/0086 , B01L3/502715 , B01L2200/12 , B01L2300/0858 , B01L2300/12 , B81B1/00 , B81B7/0087 , B81B2201/058 , B81B2203/033 , B81B2203/0361 , B81C1/00031 , B81C1/00111 , B81C1/00119 , B81C1/00206 , B81C2201/014 , Y10T137/0318 , Y10T428/24496
Abstract: Microfluidic devices having superhydrophilic bi-porous interfaces are provided, along with their methods of formation. The device can include a substrate defining a microchannel formed between a pair of side walls and a bottom surface and a plurality of nanowires extending from each of the side walls and the bottom surface. For example, the nanowires can be silicon nanowires (e.g., pure silicon, silicon oxide, silicon carbide, etc., or mixtures thereof).
Abstract translation: 提供了具有超亲水双孔界面的微流体装置及其形成方法。 该装置可以包括限定形成在一对侧壁和底表面之间的微通道的衬底和从每个侧壁和底表面延伸的多个纳米线。 例如，纳米线可以是硅纳米线（例如，纯硅，氧化硅，碳化硅等，或其混合物）。
-
公开(公告)号：US20150192486A1
公开(公告)日：2015-07-09
申请号：US14543074
申请日：2014-11-17
Applicant: Honeywell International Inc.
Inventor： Carl Stewart , Richard Davis , Gilberto Morales
CPC classification number: B81C1/00158 , B81B3/0021 , B81B3/007 , B81B2201/0264 , B81B2203/0127 , B81C2201/014 , B81C2201/0198 , B81C2203/0728 , G01L7/08 , G01L9/0042 , G01L9/0044 , G01L9/0047 , G01L9/0054 , G01L9/0055
Abstract: A pressure sensor having a diaphragm having a boss with a pattern. The diaphragm having a boss may be regarded as a bossed diaphragm. The bossed diaphragm may have higher sensitivity than a flat plate diaphragm having the same area as the bossed diaphragm. The bossed diaphragm may incorporate a simple cross pattern that can further improve the sensitivity and linearity of a pressure response of the diaphragm at low pressures. Reduction of sharp edges and corners of the boss and its legs around the periphery of the diaphragm may reduce high stress points and thus increase the burst pressure rating of the bossed diaphragm.
Abstract translation: 一种压力传感器，具有具有带图案的凸台的隔膜。 具有凸台的隔膜可以被认为是凸起的隔膜。 凸起的隔膜可能具有比具有与凸起隔膜相同面积的平板隔膜更高的灵敏度。 凸起的隔膜可以包括简单的交叉图案，其可以进一步提高隔膜在低压下的压力响应的灵敏度和线性。 凸起及其围绕隔膜周边的腿的尖锐边缘和拐角的减小可能会降低高应力点，从而提高凸起隔膜的爆破压力等级。
-
149.发明授权Micro-electro-mechanical-system device with guard ring and method for making same 有权具有保护环的微机电系统装置及其制造方法公开(公告)号：US09018718B2
公开(公告)日：2015-04-28
申请号：US12391613
申请日：2009-02-24
Applicant: Hsin Hui Hsu , Sheng Ta Lee , Chuan Wei Wang
Inventor： Hsin Hui Hsu , Sheng Ta Lee , Chuan Wei Wang
IPC: G01L9/00 , H01L23/58 , B81C1/00 , H01L41/113
CPC classification number: B81C1/00698 , B81C1/00571 , B81C2201/014 , B81C2203/0109 , H01L23/585 , H01L41/0472 , H01L41/1132 , H01L2924/0002 , H01L2924/3025 , H01L2924/00
Abstract: The present invention discloses a MEMS device with guard ring, and a method for making the MEMS device. The MEMS device comprises a bond pad and a sidewall surrounding and connecting with the bond pad, characterized in that the sidewall forms a guard ring by an etch-resistive material.
Abstract translation: 本发明公开了一种具有保护环的MEMS器件及其制造方法。 MEMS器件包括接合焊盘和围绕并与接合焊盘连接的侧壁，其特征在于，所述侧壁通过耐蚀刻材料形成保护环。
-
公开(公告)号：US20140113412A1
公开(公告)日：2014-04-24
申请号：US14135506
申请日：2013-12-19
Applicant: XINTEC INC.
Inventor： Chia-Lun TSAI , Chia-Ming CHENG , Long-Sheng YEOU
IPC: H01L21/78
CPC classification number: H01L21/78 , B81B2207/07 , B81B2207/098 , B81C1/00825 , B81C2201/014 , B81C2201/053 , B81C2203/0118
Abstract: An embodiment of the present invention relates to a chip package and fabrication method thereof, which includes a chip protection layer or an additional etching stop layer to cover conducting pads to prevent dicing residue from damaging or scratching the conducting pads. According to another embodiment, a chip protection layer, an additional etching stop layer formed thereon, or a metal etching stop layer level with conducting pads or combinations thereof may be used when etching an intermetal dielectric layer at a structural etching region and a silicon substrate to form an opening for subsequent semiconductor manufacturing processes.
Abstract translation: 本发明的实施例涉及一种芯片封装及其制造方法，其包括芯片保护层或附加的蚀刻停止层，以覆盖导电焊盘，以防止切割残留物损坏或划伤导电焊盘。 根据另一个实施例，当蚀刻结构蚀刻区域和硅衬底上的金属间电介质层时，可以使用芯片保护层，其上形成的附加蚀刻停止层或具有导电焊盘或其组合的金属蚀刻停止层， 形成随后的半导体制造工艺的开口。
-
-
-
-
-
-
-
-
-
Search Results
337
records
(took 0.042 seconds)
