公开(公告)号：US10460986B2

公开(公告)日：2019-10-29

申请号：US15882291

申请日：2018-01-29

Applicant: GLOBALFOUNDRIES INC.

Inventor： Jinsheng Gao ,  Daniel Jaeger ,  Chih-Chiang Chang ,  Michael Aquilino ,  Patrick Carpenter ,  Junsic Hong ,  Mitchell Rutkowski ,  Haigou Huang ,  Huy Cao

IPC: H01L29/66 ,  H01L21/768 ,  H01L21/28 ,  H01L21/311 ,  H01L29/417

Abstract: The present disclosure relates to semiconductor structures and, more particularly, to a cap structure and methods of manufacture. The structure includes: a gate structure composed of conductive gate material; sidewall spacers on the gate structure, extending above the conductive gate material; and a capping material on the conductive gate material and extending over the sidewall spacers on the gate structure.

公开(公告)号：US10460782B1

公开(公告)日：2019-10-29

申请号：US16055952

申请日：2018-08-06

Applicant: GLOBALFOUNDRIES, Inc.

Inventor： Yentsai Huang

IPC: G11C11/00 ,  G11C11/16 ,  G06F11/07 ,  G11C13/00

Abstract: Integrated circuits including memory cells and methods for operating memory cells are provided. In an embodiment, a method is provided for operating a memory including a plurality of operational memory cells. The method includes providing a word line voltage on a selected word line corresponding to a selected operational memory cell of the plurality of operational memory cells and to a corresponding reference memory cell. The method includes applying an operational bias current on an operational bit line to the selected operational memory cell. Also, the method includes scanning a reference bias current from a first value to a second value on a reference bit line to the reference memory cell. Further, the method includes comparing reference cell currents on the reference bit line with an operational cell current on the operational bit line to determine a logic state of the selected operational memory cell.

公开(公告)号：US10460067B2

公开(公告)日：2019-10-29

申请号：US15791210

申请日：2017-10-23

Applicant: IMEC VZW ,  GLOBALFOUNDRIES INC.

Inventor： Syed Muhammad Yasser Sherazi ,  Guillaume Bouche ,  Julien Ryckaert

IPC: G06F17/50 ,  H01L21/30 ,  H01L27/02 ,  H01L21/033 ,  H01L21/308 ,  H01L21/84 ,  H01L27/11 ,  H01L27/12 ,  H01L21/762 ,  H01L27/118

Abstract: The disclosed technology generally relates to semiconductor fabrication, and more particularly to a method of defining routing tracks for a standard cell semiconductor device, and to the standard cell semiconductor device fabricated using the method. In one aspect, a method of defining routing tracks in a target layer over a standard cell semiconductor device includes forming mandrels and forming a first set and a second set of spacers for defining the routing tracks. The standard cell semiconductor device includes a device layer and the routing tracks for contacting a device layer. The routing tracks include at least two pairs of off-center routing tracks, a central routing track arranged between the pairs of off-center routing tracks, and at least two edge tracks arranged on opposing sides of the at least two pairs of off-center routing tracks. A minimum distance between an off-center routing track and the central routing track next to the off-center routing track is smaller than a minimum distance between adjacent off-center routing tracks.

公开(公告)号：US20190326436A1

公开(公告)日：2019-10-24

申请号：US16433626

申请日：2019-06-06

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Min-hwa CHI ,  Ajey JACOB ,  Abhijeet PAUL

IPC: H01L29/78 ,  H01L21/8234 ,  H01L27/092 ,  H01L27/088 ,  H01L21/308 ,  H01L21/3065 ,  H01L21/306 ,  H01L29/161 ,  H01L29/10 ,  H01L29/66 ,  H01L21/02 ,  H01L29/06 ,  H01L29/08 ,  H01L29/16 ,  H01L29/165

Abstract: A method of forming a multi-valued logic transistor with a small footprint and the resulting device are disclosed. Embodiments include forming plural fins on a silicon substrate, each fin covered with a hardmask; filling spaces between the fins and hard masks with an oxide; removing the hardmasks and recessing each fin, forming a cavity in the oxide over each fin; forming plural Si-based layers in each cavity with an increasing percentage of Ge or C or with an decreasing concentration of dopant from a bottom layer to a top layer; performing CMP for planarization to a top of the fins; recessing the oxide to a depth slightly below a top portion of the fin having a thickness equal to a thickness of each Si-based layer; and forming a high-k gate dielectric and a metal gate electrode over the plural Si-based layers.

公开(公告)号：US20190319180A1

公开(公告)日：2019-10-17

申请号：US16448544

申请日：2019-06-21

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Philipp Steinmann ,  Puneet H. Suvarna

IPC: H01L35/32 ,  H01L35/22 ,  H01L35/34

Abstract: Structures that include semiconductor fins and methods for forming a structure that includes semiconductor fins. A first fin comprised of n-type semiconductor material and a second fin comprised of p-type semiconductor material are formed. A conductive strap is formed that couples an end of the first fin with an end of the second fin

公开(公告)号：US20190319112A1

公开(公告)日：2019-10-17

申请号：US15951621

申请日：2018-04-12

Applicant: GLOBALFOUNDRIES INC.

Inventor： Hui Zang ,  Laertis Economikos ,  Ruilong Xie

IPC: H01L29/66 ,  H01L21/8238 ,  H01L27/02

Abstract: At least one method, apparatus and system disclosed herein involves adjusting for a misalignment of a gate cut region with respect to semiconductor processing. A plurality of fins are formed on a semiconductor substrate. A gate region is formed over a portion of the fins. The gate region comprises a first dummy gate and a second dummy gate. A gate cut region is formed over the first dummy gate. A conformal fill material is deposited into the gate cut region. At least one subsequent processing step is performed.

公开(公告)号：US20190318931A1

公开(公告)日：2019-10-17

申请号：US15950364

申请日：2018-04-11

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Jiehui Shu ,  Xiaohan Wang ,  Qiang Fang ,  Zhiguo Sun ,  Jinping Liu ,  Hui Zang

IPC: H01L21/033 ,  H01L21/768 ,  H01L23/528 ,  H01L23/522

Abstract: Methods of self-aligned multiple patterning and structures formed by self-aligned multiple patterning. A mandrel line is patterned from a first mandrel layer disposed on a hardmask and a second mandrel layer disposed over the first mandrel layer. A first section of the second mandrel layer of the mandrel line is removed to expose a first section of the first mandrel layer. The first section of the first mandrel layer is masked, and the second sections of the second mandrel layer and the underlying second portions of the first mandrel layer are removed to expose first portions of the hardmask. The first portions of the hardmask are then removed with an etching process to form a trench in the hardmask. A second portion of the hardmask is masked by the first portion of the first mandrel layer during the etching process to form a cut in the trench.

公开(公告)号：US10447510B1

公开(公告)日：2019-10-15

申请号：US16266707

申请日：2019-02-04

Applicant: GLOBALFOUNDRIES INC.

Inventor： Krishnan S. Rengarajan ,  Vaibhav A. Ruparelia ,  Panduga Shiva Shankar Reddy

IPC: H03H7/30 ,  H04L25/03 ,  H04L27/38

Abstract: Disclosed is a power-optimized distributed arithmetic (DA)-based feed forward equalizer (FFE) that performs on-demand equalization processing of a data sample. Specifically, a data stream is represented by digital words, which indicate signal levels at taps on a transmission medium. A screener applies formulas to selected taps as opposed to all taps (e.g., to the main cursor tap, which corresponds to the current data sample, and to specific pre-cursor and post-cursor taps, which correspond to immediately proceeding and following data samples) to determine whether the current data sample (which should indicate a specific two-bit symbol) has degraded during transmission to a point where equalization processing is required. If so, a bypass flag is set to a first level so that the data sample is subjected to equalization processing. If not, the bypass flag is set to a second level so that such processing is bypassed. Also disclosed is a corresponding method.

公开(公告)号：US10446654B1

公开(公告)日：2019-10-15

申请号：US16008711

申请日：2018-06-14

Applicant: GLOBALFOUNDRIES INC.

Inventor： Hui Zang ,  Ruilong Xie

IPC: H01L29/76 ,  H01L29/417 ,  H01L21/768 ,  H01L29/51 ,  H01L29/45

Abstract: The present disclosure relates to semiconductor structures and, more particularly, to gate contact structures and self-aligned contact process and methods of manufacture. The structure includes: a gate structure having source and drain regions; a first metal contacting the source and drain regions; a second metal over the first metal in the source and drain regions; and a capping material over the first metal and over the gate structure.

公开(公告)号：US10446653B2

公开(公告)日：2019-10-15

申请号：US15351893

申请日：2016-11-15

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Ruilong Xie ,  Min Gyu Sung ,  Chanro Park ,  Lars Wolfgang Liebmann ,  Hoon Kim

IPC: H01L29/417 ,  H01L29/66 ,  H01L29/772 ,  H01L29/49 ,  H01L29/78 ,  H01L21/768

Abstract: A semiconductor structure includes a semiconductor substrate, a semiconductor fin on the semiconductor substrate, a transistor integrated with the semiconductor fin at a top portion thereof, the transistor including an active region including a source, a drain and a channel region therebetween. The semiconductor structure further includes a gate structure over the channel region, the gate structure including a gate electrode, an air-gap spacer pair on opposite sidewalls of the gate electrode, and a gate contact for the gate electrode. A method of fabricating such a semiconductor device is also provided.