公开(公告)号：US20050239288A1

公开(公告)日：2005-10-27

申请号：US10910182

申请日：2004-08-02

Applicant: Chao-Hsien Peng ,  Jing-Cheng Lin ,  Ching-Hua Hsieh ,  Shau-Lin Shue

Inventor： Chao-Hsien Peng ,  Jing-Cheng Lin ,  Ching-Hua Hsieh ,  Shau-Lin Shue

IPC: H01L21/306 ,  H01L21/311 ,  H01L21/3213 ,  H01L21/44 ,  H01L21/768

CPC classification number: H01L21/76831 ,  H01L21/02046 ,  H01L21/32136 ,  H01L21/76807 ,  H01L21/76814 ,  H01L21/76838

Abstract: A method for forming a barrier layer upon a copper containing conductor layer employs a hydrogen containing plasma treatment of the copper containing conductor layer followed by an argon plasma treatment of the copper containing conductor layer. The barrier layer may be formed employing a chemical vapor deposition method, such as an atomic layer deposition method. When the deposition method employs a metal and carbon containing source material, the two-step plasma pretreatment provides the barrier layer with enhanced electrical properties.

Abstract translation: 在含铜导体层上形成阻挡层的方法采用含铜导体层的含氢等离子体处理，然后进行含铜导体层的氩等离子体处理。 可以使用诸如原子层沉积方法的化学气相沉积方法形成阻挡层。 当沉积方法采用含金属和碳的源材料时，两步等离子体预处理为阻挡层提供了增强的电性能。

公开(公告)号：US20050170648A1

公开(公告)日：2005-08-04

申请号：US11056758

申请日：2005-02-11

Applicant: Ming-Hsing Tsai ,  Jing-Cheng Lin ,  Shau-Lin Shue ,  Chen-Hua Yu

Inventor： Ming-Hsing Tsai ,  Jing-Cheng Lin ,  Shau-Lin Shue ,  Chen-Hua Yu

IPC: H01L21/768 ,  H01L21/44

CPC classification number: H01L21/76844 ,  H01L21/76807 ,  H01L21/76831 ,  H01L2221/1063

Abstract: A method of forming a via in a low-k dielectric material and without the attendant via poisoning problem, or a dual damascene structure formed in the same dielectric and without the same problem are disclosed. The vertical walls of the via opening are first lined with a low-k protection layer and then covered with a barrier layer in order to prevent outgassing from the low-k dielectric material when copper is deposited into the via opening. In the case of a dual damascene structure, it is sufficient that the hole opening underlying the trench opening is first lined with the low-k protection layer. The resulting via or dual damascene structure is free of poisoned metal and, therefore, more reliable.

公开(公告)号：US20050106708A1

公开(公告)日：2005-05-19

申请号：US10499098

申请日：2002-11-29

Applicant: Wanli Xing ,  Zhe Yu ,  Guangxin Xiang ,  Liangbin Pan ,  Jing Cheng

Inventor： Wanli Xing ,  Zhe Yu ,  Guangxin Xiang ,  Liangbin Pan ,  Jing Cheng

IPC: C12M1/42 ,  C12M1/34 ,  C12N13/00 ,  C12Q1/02 ,  G01N33/543 ,  G01F1/64

CPC classification number: G01N33/5438 ,  C12M35/02 ,  G01N2333/46 ,  G01N2500/10

Abstract: The present invention provides an apparatus for stimulating an animal cell and recording its physiological signal and methods of making and using thereof. The purpose of the present invention is to provide an apparatus for stimulating an animal cell and recording its physiological signal that is efficient, convenient, and accurate. The apparatus for stimulating an animal cell and recording its physiological signal of the present invention comprises a poor conductive substrate, wherein on at least one surface of the substrate is provided at least one unit conductive polymer layer and at least one good conductive microelectrode.

Abstract translation: 本发明提供一种用于刺激动物细胞并记录其生理信号的装置及其制造和使用方法。 本发明的目的是提供一种用于刺激动物细胞并记录其生理信号的装置，其有效，方便和准确。 用于刺激动物细胞并记录其本发明的生理信号的装置包括差的导电基底，其中在基底的至少一个表面上提供至少一个单位导电聚合物层和至少一个良好的导电微电极。

公开(公告)号：US20050051512A1

公开(公告)日：2005-03-10

申请号：US10942355

申请日：2004-09-16

Applicant: Jing-Cheng Lin

Inventor： Jing-Cheng Lin

IPC: H01L21/768 ,  H01B13/00

CPC classification number: H01L21/76846 ,  H01L21/76856 ,  H01L21/76873 ,  H01L2924/0002 ,  H01L2924/00

Abstract: It is a general object of the present invention to provide an improved method of fabrication in the formation of an improved copper metal diffusion barrier layer having the structure, W/WSiN/WN, in single and dual damascene interconnect trench/contact via processing with 0.10 micron nodes for MOSFET and CMOS applications. The diffusion barrier is formed by depositing a tungsten nitride bottom layer, followed by an in situ SiH4/NH3 or SiH4/H2 soak forming a WSiN layer, and depositing a final top layer of tungsten. This invention is used to manufacture reliable metal interconnects and contact vias in the fabrication of MOSFET and CMOS devices for both logic and memory applications and the copper diffusion barrier formed, W/WSiN/WN, passes a stringent barrier thermal reliability test at 400° C. Pure single barrier layers, i.e., single layer WN, exhibit copper punch through or copper spiking during the stringent barrier thermal reliability test at 400° C.

Abstract translation: 本发明的一般目的是提供一种改进的制造方法，该方法是在单和双镶嵌互连沟槽/接触通孔加工中具有以下结构的W / WSiN / WN结构的改进的铜金属扩散阻挡层的形成 微米节点用于MOSFET和CMOS应用。 扩散阻挡层通过沉积氮化钨底层，随后形成SiH4 / NH3或SiH4 / H2浸泡形成WSiN层，并沉积钨的最终顶层形成。 本发明用于在逻辑和存储器应用的MOSFET和CMOS器件的制造中制造可靠的金属互连和接触孔，并且形成的铜扩散阻挡层W / WSiN / WN在400℃下通过严格的阻挡热可靠性测试 在400℃的严格的阻隔热可靠性试验期间，纯单层阻挡层，即单层WN，表现出铜冲穿或铜尖峰。

公开(公告)号：US06551915B2

公开(公告)日：2003-04-22

申请号：US09898980

申请日：2001-07-03

Applicant: Jing-Cheng Lin ,  Shau-Lin Shue

Inventor： Jing-Cheng Lin ,  Shau-Lin Shue

IPC: H01L2144

CPC classification number: H01L21/76828 ,  H01L21/7681 ,  H01L21/76814 ,  H01L21/76826

Abstract: Within a damascene method for forming a patterned conductor layer within an aperture defined by a patterned dielectric layer within a microelectronic fabrication, at least one of: (1) the patterned dielectric layer is thermally annealed at a temperature of from about 300 to about 450 degrees centigrade prior to forming within the aperture the patterned conductor layer; and (2) the aperture is etched with a plasma employing an etchant gas composition comprising hydrogen to form a laterally enlarged aperture prior to forming within the laterally enlarged aperture the patterned conductor layer. In accord with the method, the microelectronic fabrication is formed with decreased contact resistance and enhanced structural integrity.

公开(公告)号：US06448794B1

公开(公告)日：2002-09-10

申请号：US09643362

申请日：2000-08-22

Applicant: Jing Cheng ,  Junquan Xu ,  Xiaoshan Zhu ,  Litian Liu ,  Xiao-Bo Wang ,  Lei Wu

Inventor： Jing Cheng ,  Junquan Xu ,  Xiaoshan Zhu ,  Litian Liu ,  Xiao-Bo Wang ,  Lei Wu

IPC: G01R2708

CPC classification number: G01N33/48707 ,  B01J2219/00497 ,  B01J2219/00527 ,  B01J2219/00529 ,  B01J2219/00587 ,  B01J2219/00596 ,  B01J2219/00653 ,  B01J2219/00659 ,  B01J2219/00707 ,  B01J2219/0072 ,  Y10S436/806

Abstract: The present invention concerns a high throughput electrorotation chip having an array of electrorotation units and methods of use thereof. To make the high throughput electrorotation chip, a plurality of electrorotation units (EU) are fabricated on a substrate or support and each EU is capable of producing a rotating electric field upon the application of an appropriate electrical signal. Exemplary embodiments include a row-column configuration of EUs having four electrode elements realized through two conductive-layers. The electrode elements may be linear, concave, or convex. Thin plates having one or multiple holes are bound to high-throughput electrorotation chips to form assay chambers having one or multiple wells. Particles can be introduced to the wells and electrorotation measurements can be performed on the particles. The high throughput electrorotation chip and chamber may be used for cell-based screening for leading drug candidate molecules from a compound library, for high-throughput characterizing particle electric properties, and for high-throughput assaying molecular compositions of unknown solutions.

Abstract translation: 本发明涉及一种具有电极单元阵列的高通量电选机芯及其使用方法。 为了制造高通量电选芯片，在基板或支撑件上制造多个电极单元（EU），并且每个EU在施加适当的电信号时能够产生旋转电场。 示例性实施例包括具有通过两个导电层实现的四个电极元件的EU行的列列配置。 电极元件可以是线性的，凹的或凸的。 具有一个或多个孔的薄板结合到高通量电旋转切片以形成具有一个或多个孔的测定室。 可以将颗粒引入孔中，并且可以对颗粒进行电转化测量。 高通量电刺激芯片和腔室可用于来自化合物文库的主要药物候选分子的基于细胞的筛选，用于高通量表征颗粒电性质，以及用于高通量测定未知溶液的分子组成。

公开(公告)号：US06432758B1

公开(公告)日：2002-08-13

申请号：US09781431

申请日：2001-02-13

Applicant: Huang-Chung Cheng ,  Ching-Wei Lin ,  Li-Jing Cheng

Inventor： Huang-Chung Cheng ,  Ching-Wei Lin ,  Li-Jing Cheng

IPC: H01L2100

CPC classification number: H01L21/00 ,  H01L29/66757 ,  H01L29/78675

Abstract: The present invention proposes a crystallization method of the poly-Si thin film in a thin film transistor. A substrate having an insulator layer is provided. An amorphous silicon layer or a micro-crystalline silicon layer having two thickness is first formed on the insulator layer. The region of thinner is defined as the channel region of the TFT, while the region of thicker can be defined as the source/drain regions of the TFT. Next, an excimer laser is used for crystallization. During the excimer laser irradiation, the amorphous silicon layer of thinner is completely melted, and the amorphous silicon layer of thicker is partially melted. The partially melted amorphous silicon layer is used as crystallization seeds. Through formation of the temperature gradient between the completely melted amorphous silicon layer and the partially melted amorphous silicon layer, longitudinal growth of silicon grains in the completely melted region will be performed to grow a poly-Si layer having good homogeneity and large grains.

Abstract translation: 本发明提出了薄膜晶体管中的多晶硅薄膜的结晶方法。 提供具有绝缘体层的基板。 首先在绝缘体层上形成具有两个厚度的非晶硅层或微晶硅层。 较薄的区域被定义为TFT的沟道区域，而较厚的区域可以被定义为TFT的源极/漏极区域。 接下来，使用准分子激光器进行结晶。 在准分子激光照射期间，较薄的非晶硅层完全熔化，较厚的非晶硅层部分熔化。 部分熔融的非晶硅层用作结晶种子。 通过形成完全熔融的非晶硅层和部分熔融的非晶硅层之间的温度梯度，将完成完全熔融区域中的硅晶粒的纵向生长，以生长具有良好均匀性和大晶粒的多晶硅层。

公开(公告)号：US6107938A

公开(公告)日：2000-08-22

申请号：US55154

申请日：1998-04-04

Applicant: Hong Feng Du ,  Jing Cheng Luo

Inventor： Hong Feng Du ,  Jing Cheng Luo

IPC: H03K17/94 ,  H04Q19/00

CPC classification number: H03K17/941

Abstract: An infrared proximity and remote control wall switch positioned between a fixture and a voltage source for allowing a fixture to operate in one of a manual and automatic mode. The infrared proximity and remote control wall switch includes a three position switch operable between a first on position connecting the fixture directly to the voltage source, a second off position for disconnecting the fixture from the voltage source and a third auto position for allowing automatic operation of the fixture. An infrared emitter generates an infrared signal and an infrared receiver is connected to receive one of the infrared signal generated by the infrared emitter and reflected by an object and an infrared signal generated by a conventional television, video cassette recorder or hi-fi remote control unit. A device is connected to the infrared receiver for filtering the signal received by said infrared receiver and eliminate noise signals therefrom. Connected to the filtering device acts to connect the fixture to the voltage source upon receipt of a filtered signal from the filtering device. This device is able to eliminate noise signals from affecting the operation of the fixture when the switch is in the auto position and is able to activate the fixture to turn on at a plurality of different intensities. A timer may also be included for turning the fixture off after a predetermined period of time has passed since activation.

Abstract translation: 位于夹具和电压源之间的红外接近和远程控制墙壁开关，用于允许夹具以手动和自动模式之一操作。 红外线接近和远程控制墙壁开关包括三位置开关，其可在将固定装置直接连接到电压源的第一开启位置和用于将固定装置与电压源断开的第二关闭位置和用于允许自动操作的第三自动位置之间操作 夹具。 红外线发射器产生红外信号，并且红外线接收器被连接以接收由红外发射器产生并被物体反射的红外信号之一和由常规电视，录像机或高保真遥控单元产生的红外信号 。 设备连接到红外接收器，用于对由红外线接收器接收到的信号进行滤波，并从中消除噪声信号。 连接到过滤装置的作用是在从过滤装置接收到经滤波的信号时将夹具连接到电压源。 当开关处于自动位置时，该装置能够消除噪声信号影响灯具的操作，并且能够以多个不同的强度启动灯具以接通。 也可以包括定时器，用于在从激活开始经过预定时间段之后关闭固定装置。

公开(公告)号：US5969129A

公开(公告)日：1999-10-19

申请号：US682573

申请日：1996-08-26

Applicant: Brian Caddy ,  Jing Cheng

Inventor： Brian Caddy ,  Jing Cheng

IPC: C07H1/06 ,  C07H21/00 ,  C12N15/09 ,  C12N15/10 ,  C12P19/34 ,  C07H1/02

CPC classification number: C12N15/1006

Abstract: A process for isolating polynucleotides from aqueous mixtures containing both polynucleotides and polysaccharides is described. The process uses polymer gels containing --B(OH).sub.2 groups, and is useful in purifying deoxyribonucleic acid extracted from plants.

Abstract translation: PCT No.PCT / GB95 / 00150 Sec。 371日期：1996年8月26日 102（e）日期1996年8月26日PCT提交1995年1月26日PCT公布。 公开号WO95 / 20594 日期1995年8月3日描述了从含有多核苷酸和多糖的含水混合物中分离多核苷酸的方法。 该方法使用含有-B（OH）2基团的聚合物凝胶，可用于纯化从植物提取的脱氧核糖核酸。

公开(公告)号：US5914375A

公开(公告)日：1999-06-22

申请号：US905620

申请日：1997-08-04

Applicant: Jing-Cheng Cheng Tsai ,  Shian-Jy Wang ,  Shu-Ling Peng ,  Mickey Sue

Inventor： Jing-Cheng Cheng Tsai ,  Shian-Jy Wang ,  Shu-Ling Peng ,  Mickey Sue

IPC: C08F4/643 ,  C08F12/04 ,  C08F12/08

CPC classification number: C08F12/04

Abstract: An catalyst composition for preparing high-syndiotacticity polystyrene polymers which comprises: (a) a titanium complex represented by the following formula of TiR'.sub.1 R'.sub.2 R'.sub.3 R'.sub.4 or TiR'.sub.1 R'.sub.2 R'.sub.3, wherein R'.sub.1, R'.sub.2, R'.sub.3, and R'.sub.4 are, independently, an alkyl group, an aryl group, an alkoxy group, an aryloxy group, an amino group, a hydrogen atom, or a halogen atom; (b) a cyclopentadienyl complex of silicon (Si), germanium (Ge), or tin (Sn) represented by the following formula: ##STR1## wherein R.sub.1, R.sub.2, R.sub.3, R.sub.4 and R.sub.5 can be, independently, alkyl group, aryl group, silyl group, germanyl group, stannyl group, hydrogen atom, or halogen atom; R is an alkyl group, aryl group, hydrogen atom, or halogen atom; and X can be one of the Group IVA elements of silicon (Si), germanium (Ge), or tin (Sn); and (c) an activated transitional metal co-catalyst, which can be methyl aluminoxane, or a mixture containing a non-coordinated Lewis acid (a Lewis acid is an electron-pair donor) and a trialkyl aluminum, such as triethyl aluminum or tetraisobutyl aluminum. R.sub.1 and R.sub.2 and R.sub.3 and R.sub.4, respectively, can also be part of a benzene ring.

Abstract translation: 一种用于制备高间同立构聚苯乙烯聚合物的催化剂组合物，其包含：（a）由下式TiR'1R'2R'3R'4或TiR'1R'2R'3表示的钛络合物，其中R'1，R' 2，R'3和R '4独立地是烷基，芳基，烷氧基，芳氧基，氨基，氢原子或卤素原子; （b）由下式表示的硅（Si），锗（Ge）或锡（Sn）的环戊二烯基络合物：其中R1，R2，R3，R4和R5可以独立地为烷基，芳基，甲硅烷基 基团，锗烷基，甲锡烷基，氢原子或卤素原子; R是烷基，芳基，氢原子或卤素原子; X可以是硅（Si），锗（Ge）或锡（Sn）的IVA族元素之一; 和（c）活化的过渡金属助催化剂，其可以是甲基铝氧烷，或含有非配位路易斯酸（路易斯酸是电子对供体）和三烷基铝的混合物，例如三乙基铝或四异丁基 铝。 R1和R2以及R3和R4分别也可以是苯环的一部分。