公开(公告)号：US20210026556A1

公开(公告)日：2021-01-28

申请号：US16947679

申请日：2020-08-12

Applicant: Rambus Inc.

Inventor： Scott C. Best

IPC: G06F3/06 ,  G11C7/10

Abstract: A buffer circuit includes a primary interface, a secondary interface, and an encoder/decoder circuit. The primary interface is configured to communicate on an n-bit channel, wherein n parallel bits on the n-bit channel are coded using data bit inversion (DBI). The secondary interface is configured to communicate with a plurality of integrated circuit devices on a plurality of m-bit channels, each m-bit channel transmitting m parallel bits without using DBI. And the encoder/decoder circuit is configured to translate data words between the n-bit channel of the primary interface and the plurality of m-bit channels of the secondary interface.

公开(公告)号：US20210004340A1

公开(公告)日：2021-01-07

申请号：US16933881

申请日：2020-07-20

Applicant: Rambus Inc.

Inventor： Scott C. Best

IPC: G06F13/362 ,  H01L23/48 ,  H01L23/60 ,  H01L25/065 ,  G11C11/408 ,  G11C11/409 ,  H01L23/50 ,  H01L23/00 ,  G06F13/40 ,  G11C11/4096 ,  G11C14/00 ,  G11C16/10 ,  G11C16/26 ,  H01L27/02

Abstract: This application is directed to a stacked semiconductor device assembly including a plurality of identical stacked integrated circuit (IC) devices. Each IC device further includes a master interface, a channel master circuit, a slave interface, a channel slave circuit, a memory core, and a modal pad configured to receive a selection signal for the IC device to communicate data using one of its channel master circuit or its channel slave circuit. In some implementations, the IC devices include a first IC device and one or more second IC devices. In accordance with the selection signal, the first IC device is configured to communicate read/write data via the channel master circuit of the first IC device, and each of the one or more second IC devices is configured to communicate respective read/write data via the channel slave circuit of the respective second IC device.

公开(公告)号：US10699769B2

公开(公告)日：2020-06-30

申请号：US16225109

申请日：2018-12-19

Applicant: Rambus Inc.

Inventor： Scott C. Best ,  Richard E. Warmke ,  David B. Roberts ,  Frank Lambrecht

IPC: H04L7/00 ,  G11C11/4076 ,  G06F1/10 ,  G11C7/10 ,  H03L7/07 ,  H03L7/081 ,  H04L7/033 ,  G11C7/22 ,  G11C11/4091 ,  G11C7/04

Abstract: A memory controller receives data and phase-providing signals from a memory device. The phase-providing signal is not a clock signal, but is used by the memory controller to phase align a local data-sampling signal with the incoming data. The memory controller samples the data signal with the data-sampling signal. The memory controller can perform maintenance operations to update the phase relationship between the phase-providing and data-sampling signals.

公开(公告)号：US20200042233A1

公开(公告)日：2020-02-06

申请号：US16543870

申请日：2019-08-19

Applicant: Rambus Inc.

Inventor： Scott C. Best

IPC: G06F3/06 ,  G11C7/10

Abstract: A buffer circuit includes a primary interface, a secondary interface, and an encoder/decoder circuit. The primary interface is configured to communicate on an n-bit channel, wherein n parallel bits on the n-bit channel are coded using data bit inversion (DBI). The secondary interface is configured to communicate with a plurality of integrated circuit devices on a plurality of m-bit channels, each m-bit channel transmitting m parallel bits without using DBI. And the encoder/decoder circuit is configured to translate data words between the n-bit channel of the primary interface and the plurality of m-bit channels of the secondary interface.

公开(公告)号：US20190294568A1

公开(公告)日：2019-09-26

申请号：US16436368

申请日：2019-06-10

Applicant: Rambus Inc.

Inventor： Scott C. Best ,  Ian Shaeffer

IPC: G06F13/16 ,  G11C11/4093 ,  G11C11/409 ,  G11C11/4076 ,  G06F3/06

Abstract: A memory system includes a memory controller coupled to multiple memory devices. Each memory device includes an oscillator that generates an internal reference signal that oscillates at a frequency that is a function of physical device structures within the memory device. The frequencies of the internal reference signals are thus device specific. Each memory device develops a shared reference signal from its internal reference signal and communicates the shared reference signal to the common memory controller. The memory controller uses the shared reference signals to recover device-specific frequency information from each memory device, and then communicates with each memory device at a frequency compatible with the corresponding internal reference signal.

公开(公告)号：US10387075B2

公开(公告)日：2019-08-20

申请号：US16010664

申请日：2018-06-18

Applicant: Rambus Inc.

Inventor： Scott C. Best

IPC: G06F3/06 ,  G11C7/10 ,  G11C5/04

Abstract: A buffer circuit includes a primary interface, a secondary interface, and an encoder/decoder circuit. The primary interface is configured to communicate on an n-bit channel, wherein n parallel bits on the n-bit channel are coded using data bit inversion (DBI). The secondary interface is configured to communicate with a plurality of integrated circuit devices on a plurality of m-bit channels, each m-bit channel transmitting m parallel bits without using DBI. And the encoder/decoder circuit is configured to translate data words between the n-bit channel of the primary interface and the plurality of m-bit channels of the secondary interface.

公开(公告)号：US10360972B2

公开(公告)日：2019-07-23

申请号：US15552569

申请日：2016-02-22

Applicant: Rambus Inc.

Inventor： Frederick A. Ware ,  Ely K. Tsern ,  John Eric Linstadt ,  Thomas J. Giovannini ,  Scott C. Best ,  Kenneth L. Wright

IPC: G11C5/02 ,  G11C11/4093 ,  G11C5/06 ,  G11C11/4076 ,  G11C11/408 ,  G11C29/00 ,  H01L25/065 ,  H01L25/10 ,  G11C11/4096 ,  H01L25/18 ,  G11C7/10 ,  G11C8/12 ,  H01L23/00

Abstract: A memory system includes dynamic random-access memory (DRAM) component that include interconnected and redundant component data interfaces. The redundant interfaces facilitate memory interconnect topologies that accommodate considerably more DRAM components per memory channel than do traditional memory systems, and thus offer considerably more memory capacity per channel, without concomitant reductions in signaling speeds. Each DRAM component includes multiplexers that allow either of the data interfaces to write data to or read data from a common set of memory banks, and to selectively relay write and read data to and from other components, bypassing the local banks. Delay elements can impose selected read/write delays to align read and write transactions from and to disparate DRAM components.

公开(公告)号：US20190221249A1

公开(公告)日：2019-07-18

申请号：US16211966

申请日：2018-12-06

Applicant: Rambus Inc.

Inventor： Scott C. Best ,  Ming Li

IPC: G11C11/4093 ,  G11C11/4096 ,  G11C5/02 ,  G11C11/406 ,  G11C5/04 ,  H01L25/065 ,  H01L25/10 ,  H01L25/18 ,  H01L23/48

CPC classification number: G11C11/4093 ,  G11C5/02 ,  G11C5/025 ,  G11C5/04 ,  G11C11/406 ,  G11C11/4096 ,  H01L23/481 ,  H01L24/73 ,  H01L25/0652 ,  H01L25/0657 ,  H01L25/105 ,  H01L25/18 ,  H01L2224/0401 ,  H01L2224/16225 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/48091 ,  H01L2224/48225 ,  H01L2224/48227 ,  H01L2224/73265 ,  H01L2225/0651 ,  H01L2225/0652 ,  H01L2225/06541 ,  H01L2225/06558 ,  H01L2225/06562 ,  H01L2225/1023 ,  H01L2225/1058 ,  H01L2924/00011 ,  H01L2924/00014 ,  H01L2924/01019 ,  H01L2924/01055 ,  H01L2924/14 ,  H01L2924/15311 ,  H01L2924/15321 ,  H01L2924/15331 ,  H01L2924/3011 ,  H01L2924/00012 ,  H01L2924/00

Abstract: A memory is disclosed that includes a logic die having first and second memory interface circuits. A first memory die is stacked with the logic die, and includes first and second memory arrays. The first memory array couples to the first memory interface circuit. The second memory array couples to the second interface circuit. A second memory die is stacked with the logic die and the first memory die. The second memory die includes third and fourth memory arrays. The third memory array couples to the first memory interface circuit. The fourth memory array couples to the second memory interface circuit. Accesses to the first and third memory arrays are carried out independently from accesses to the second and fourth memory arrays.

公开(公告)号：US10198314B2

公开(公告)日：2019-02-05

申请号：US14285467

申请日：2014-05-22

Applicant: Rambus Inc.

Inventor： Frederick A. Ware ,  Suresh Rajan ,  Brent Haukness ,  Scott C. Best ,  Wayne F. Ellis

IPC: G06F11/10 ,  G11C29/42 ,  G11C29/44 ,  G11C29/00 ,  G11C11/40 ,  G11C29/04

Abstract: A memory device is disclosed that includes a row of storage locations to store a data word, and a spare row element. The data word is encoded via an error code for generating error information for correcting X bit errors or detecting Y bit errors, where Y is greater than X. The spare row element has substitute storage locations. The logic is responsive to detected errors to (1) enable correction of a data word based on the error information where there are no more than X bit errors, and (2) substitute the spare row element for a portion of the row where there are at least Y bit errors in the data word.

公开(公告)号：US10133693B2

公开(公告)日：2018-11-20

申请号：US15827825

申请日：2017-11-30

Applicant: Rambus Inc.

Inventor： Scott C. Best ,  Ian Shaeffer

IPC: G06F12/00 ,  G06F13/00 ,  G06F13/16 ,  G06F3/06 ,  G11C11/4076 ,  G11C11/409 ,  G11C11/4093

Abstract: A memory system includes a memory controller coupled to multiple memory devices. Each memory device includes an oscillator that generates an internal reference signal that oscillates at a frequency that is a function of physical device structures within the memory device. The frequencies of the internal reference signals are thus device specific. Each memory device develops a shared reference signal from its internal reference signal and communicates the shared reference signal to the common memory controller. The memory controller uses the shared reference signals to recover device-specific frequency information from each memory device, and then communicates with each memory device at a frequency compatible with the corresponding internal reference signal.