公开(公告)号：US09982345B2

公开(公告)日：2018-05-29

申请号：US15210352

申请日：2016-07-14

Applicant: Applied Materials, Inc.

Inventor： David Thompson ,  David Knapp ,  Jeffrey W. Anthis

IPC: C23C16/18 ,  C23C16/455 ,  C07F5/06

CPC classification number: C23C16/45536 ,  C07F5/062 ,  C23C16/18 ,  C23C16/45553

Abstract: Methods of depositing a metal-containing film by exposing a substrate surface to a first precursor and a reactant, where one or more of the first precursor and the react comprises a compound having the general formula of one or more of M(XR3)2, M(XR3)3, M(XR3)4, M(XR3)5 and M(XR3)6, where M is selected from the group consisting of Al, Ti, Ta, Zr, La, Hf, Ce, Zn, Cr, Sn, V and combinations thereof, each X is one or more of C, Si and Ge and each R is independently a methyl or ethyl group and comprises substantially no β-H.

公开(公告)号：US20180061629A1

公开(公告)日：2018-03-01

申请号：US15804503

申请日：2017-11-06

Applicant: Applied Materials, Inc.

Inventor： Mark Saly ,  David Thompson ,  Lakmal C. Kalutarage

IPC: H01L21/02 ,  C23C16/30 ,  C23C16/455 ,  C23C16/56

CPC classification number: H01L21/0228 ,  C23C16/30 ,  C23C16/45531 ,  C23C16/56 ,  H01L21/02126

Abstract: Methods for the deposition of a SiCON film by molecular layer deposition using a multi-functional amine and a silicon containing precursor having a reactive moiety.

公开(公告)号：US20180040470A1

公开(公告)日：2018-02-08

申请号：US15789370

申请日：2017-10-20

Applicant: Applied Materials, Inc.

Inventor： Ning Li ,  Mark Saly ,  David Thompson ,  Mihaela Balseanu ,  Li-Qun Xia

IPC: H01L21/02

CPC classification number: H01L21/0228 ,  C23C16/30 ,  C23C16/308 ,  C23C16/345 ,  C23C16/401 ,  C23C16/45553 ,  H01L21/02126 ,  H01L21/02167 ,  H01L21/02211 ,  H01L21/02274 ,  H01L21/31111

Abstract: Methods for the formation of SiCN, SiCO and SiCON films comprising cyclical exposure of a substrate surface to a silicon-containing gas, a carbon-containing gas and a plasma. Some embodiments further comprise the addition of an oxidizing agent prior to at least the plasma exposure.

公开(公告)号：US20180025907A1

公开(公告)日：2018-01-25

申请号：US15654185

申请日：2017-07-19

Applicant: Applied Materials, Inc.

Inventor： Lakmal C. Kalutarage ,  Mark Saly ,  David Thompson ,  Abhijit Basu Mallick ,  Tejasvi Ashok ,  Pramit Manna

IPC: H01L21/02 ,  H01L21/762

CPC classification number: H01L21/02274 ,  H01L21/02126 ,  H01L21/02164 ,  H01L21/02167 ,  H01L21/0217 ,  H01L21/02208 ,  H01L21/02211 ,  H01L21/02323 ,  H01L21/02337 ,  H01L21/0234 ,  H01L21/76224

Abstract: Methods for seam-less gapfill comprising forming a flowable film by exposing a substrate surface to a silicon-containing precursor and a co-reactant are described. The silicon-containing precursor has at least one akenyl or alkynyl group. The flowable film can be cured by any suitable curing process to form a seam-less gapfill.

公开(公告)号：US09812318B2

公开(公告)日：2017-11-07

申请号：US14801215

申请日：2015-07-16

Applicant: Applied Materials, Inc.

Inventor： Mark Saly ,  David Thompson ,  Lakmal Kalutarage

IPC: C23C16/30 ,  H01L21/02 ,  C23C16/56 ,  C23C16/455

CPC classification number: H01L21/0228 ,  C23C16/30 ,  C23C16/45531 ,  C23C16/56 ,  H01L21/02126

Abstract: Methods for the deposition of a SiCON film by molecular layer deposition using a multi-functional amine and a silicon containing precursor having a reactive moiety.

公开(公告)号：US09799511B2

公开(公告)日：2017-10-24

申请号：US15142514

申请日：2016-04-29

Applicant: Applied Materials, Inc.

Inventor： Ning Li ,  Mark Saly ,  David Thompson ,  Mihaela Balseanu ,  Li-Qun Xia

IPC: H01L21/311 ,  H01L21/02 ,  C23C16/455

CPC classification number: H01L21/0228 ,  C23C16/30 ,  C23C16/308 ,  C23C16/345 ,  C23C16/401 ,  C23C16/45553 ,  H01L21/02126 ,  H01L21/02167 ,  H01L21/02211 ,  H01L21/02274 ,  H01L21/31111

Abstract: Methods for the formation of SiCN, SiCO and SiCON films comprising cyclical exposure of a substrate surface to a silicon-containing gas, a carbon-containing gas and a plasma. Some embodiments further comprise the addition of an oxidizing agent prior to at least the plasma exposure.

公开(公告)号：US09653352B2

公开(公告)日：2017-05-16

申请号：US14300773

申请日：2014-06-10

Applicant: APPLIED MATERIALS, INC.

Inventor： Liqi Wu ,  Sang Ho Yu ,  Kazuya Daito ,  Kie Jin Park ,  Kai Wu ,  David Thompson

IPC: H01L21/768 ,  H01L21/285 ,  C23C16/04 ,  C23C16/06 ,  C23C16/455

CPC classification number: H01L21/76877 ,  C23C16/045 ,  C23C16/06 ,  C23C16/45536 ,  H01L21/28556 ,  H01L21/76843 ,  H01L21/76876

Abstract: Methods for forming metal organic tungsten for middle-of-the-line (MOL) applications are provided herein. In some embodiments, a method of processing a substrate includes providing a substrate to a process chamber, wherein the substrate includes a feature formed in a first surface of a dielectric layer of the substrate; exposing the substrate to a plasma formed from a first gas comprising a metal organic tungsten precursor to form a tungsten barrier layer atop the dielectric layer and within the feature, wherein a temperature of the process chamber during formation of the tungsten barrier layer is less than about 225 degrees Celsius; and depositing a tungsten fill layer over the tungsten barrier layer to fill the feature to the first surface.

公开(公告)号：US20170092533A1

公开(公告)日：2017-03-30

申请号：US14957380

申请日：2015-12-02

Applicant: APPLIED MATERIALS, INC.

Inventor： Tapash Chakraborty ,  Mark Saly ,  Rana Howlader ,  Eswaranand Venkatasubramanian ,  Prerna Sonthalia Goradia ,  Robert Jan Visser ,  David Thompson

IPC: H01L21/768 ,  H01L21/321 ,  H01L21/02

CPC classification number: H01L21/76802 ,  H01L21/02164 ,  H01L21/02167 ,  H01L21/0217 ,  H01L21/0226 ,  H01L21/0228 ,  H01L21/02307 ,  H01L21/32 ,  H01L21/321 ,  H01L21/3212 ,  H01L21/76829 ,  H01L21/7684 ,  H01L21/76877 ,  H01L21/76883

Abstract: Methods of selectively depositing a patterned layer on exposed dielectric material but not on exposed metal surfaces are described. A self-assembled monolayer (SAM) is deposited using phosphonic acids. Molecules of the self-assembled monolayer include a head moiety and a tail moiety, the head moiety forming a bond with the exposed metal portion and the tail moiety extending away from the patterned substrate and reducing the deposition rate of the patterned layer above the exposed metal portion relative to the deposition rate of the patterned layer above the exposed dielectric portion. A dielectric layer is subsequently deposited by atomic layer deposition (ALD) which cannot initiate in regions covered with the SAM in embodiments.

公开(公告)号：US20170062224A1

公开(公告)日：2017-03-02

申请号：US15234448

申请日：2016-08-11

Applicant: Applied Materials, Inc.

Inventor： Xinyu Fu ,  David Knapp ,  David Thompson ,  Jeffrey W. Anthis ,  Mei Chang

IPC: H01L21/285 ,  C23C16/455 ,  C23C16/08

CPC classification number: H01L21/28562 ,  C23C16/06 ,  C23C16/08 ,  C23C16/45527 ,  C23C16/45553 ,  H01L21/28556 ,  H01L29/7869

Abstract: Processing methods comprising exposing a substrate to an optional nucleation promoter followed by sequential exposure of a first reactive gas comprising a metal oxyhalide compound and a second reactive gas to form a metal film on the substrate.

Abstract translation: 处理方法包括将基底暴露于任选的成核促进剂，随后连续暴露包含金属卤化物化合物和第二反应气体的第一反应气体，以在基底上形成金属膜。

公开(公告)号：US20170022609A1

公开(公告)日：2017-01-26

申请号：US15215041

申请日：2016-07-20

Applicant: Applied Materials, Inc.

Inventor： Thomas Knisley ,  David Thompson

IPC: C23C16/455 ,  C07F11/00

CPC classification number: C07F11/005 ,  C23C16/0281 ,  C23C16/18 ,  C23C16/42 ,  C23C16/45553

Abstract: Tungsten precursors represented by the formula W(ND)x(DAD)yRz, where each ND is a neutral donor, each DAD is a diazadiene, each R is an anionic or dianionic ligand and x is in the range of 0 to 4, y is in the range of 1 to 3, z is in the range of 0 to 4 and x+z is greater than or equal to 1. Methods of depositing a film using the tungsten precursors are provided.

Abstract translation: 由式W（ND）x（DAD）yRz表示的钨前体，其中每个ND是中性供体，每个DAD是二氮烯，每个R是阴离子或双阴离子配体，x在0至4的范围内，y 在1至3的范围内，z在0至4的范围内，x + z大于或等于1.提供了使用钨前体沉积膜的方法。