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    SEMICONDUCTOR DEVICE WITH BALLISTIC GATE LENGTH STRUCTURE
    172.
    发明申请
    SEMICONDUCTOR DEVICE WITH BALLISTIC GATE LENGTH STRUCTURE 有权
    具有弹性门长度结构的半导体器件

    公开(公告)号：US20160087232A1

    公开(公告)日：2016-03-24

    申请号：US14956560

    申请日：2015-12-02

    Applicant: International Business Machines Corporation

    Inventor： Aaron D. Franklin ,  Shu-Jen Han ,  Satyavolu S. Papa Rao ,  Joshua T. Smith

    IPC: H01L51/05

    CPC classification number: H01L51/0554 ,  H01L51/0023 ,  H01L51/0048 ,  H01L51/0545 ,  H01L51/055 ,  H01L51/0558

    Abstract: Embodiments of the invention include a method of fabrication of a semiconductor structure. The method of fabrication includes: Forming a trench in a first dielectric material down to a first conductive material of a bottom gate. A sidewall of the trench contacts a top surface of the first conductive material. Depositing a second conductive material on the sidewall of the trench, which forms an electrical connection with the first conductive material. Depositing a second dielectric material a in the trench, and on the second conductive material. Depositing a gate dielectric material on the second conductive material and the dielectric materials. Forming a channel material on the gate dielectric material. Depositing another conductive material on the channel material and portions of the gate dielectric material to form a source terminal and a drain terminal.

    Abstract translation: 本发明的实施例包括半导体结构的制造方法。 制造方法包括：在第一介电材料中形成沟槽，直到底栅的第一导电材料。 沟槽的侧壁接触第一导电材料的顶表面。 在沟槽的侧壁上沉积第二导电材料，其与第一导电材料形成电连接。 将第二电介质材料a沉积在沟槽中以及在第二导电材料上。 在第二导电材料和电介质材料上沉积栅极电介质材料。 在栅极电介质材料上形成通道材料。 在沟道材料和栅极电介质材料的部分上沉积另一种导电材料以形成源极端子和漏极端子。

    Semiconductor device with ballistic gate length structure
    173.
    发明授权
    Semiconductor device with ballistic gate length structure 有权
    具有弹道门长度结构的半导体器件

    公开(公告)号：US09246112B2

    公开(公告)日：2016-01-26

    申请号：US14150275

    申请日：2014-01-08

    Applicant: International Business Machines Corporation

    Inventor： Aaron D. Franklin ,  Shu-Jen Han ,  Satyavolu S. Papa Rao ,  Joshua T. Smith

    IPC: H01L21/00 ,  H01L21/84 ,  H01L51/05 ,  H01L51/00

    CPC classification number: H01L51/0554 ,  H01L51/0023 ,  H01L51/0048 ,  H01L51/0545 ,  H01L51/055 ,  H01L51/0558

    Abstract: Embodiments of the invention include a method of fabrication and a semiconductor structure. The method of fabrication includes depositing a first dielectric material on a substrate, and forming a bottom gate including filling a first opening in the first dielectric layer with a first conductive material. Next, depositing a second dielectric material, and forming a trench in the second dielectric material down to the first conductive material. Next, depositing a second conductive material on the sidewall of the trench forming an electrical connection between the first conductive material and the second conductive material, depositing a third dielectric material in the trench, and removing excess material not in the trench. Next, depositing a gate dielectric layer, and forming a channel layer of carbon nanotubes on the gate dielectric layer. Lastly, depositing a third conductive material on the channel layer forming source and drain terminals.

    Abstract translation: 本发明的实施例包括制造方法和半导体结构。 制造方法包括在衬底上沉积第一介电材料，以及形成底栅，包括用第一导电材料填充第一介电层中的第一开口。 接下来，沉积第二介电材料，并在第二电介质材料中形成沟槽，直到第一导电材料。 接下来，在沟槽的侧壁上沉积第二导电材料，形成第一导电材料和第二导电材料之间的电连接，在沟槽中沉积第三电介质材料，以及除去不在沟槽中的多余材料。 接下来，沉积栅极电介质层，并在栅极电介质层上形成碳纳米管的沟道层。 最后，在形成源极和漏极端子的沟道层上沉积第三导电材料。

    Reactive contacts for 2D layered metal dichalcogenides
    174.
    发明授权
    Reactive contacts for 2D layered metal dichalcogenides 有权
    2D层状金属二硫属元素的反应性接触

    公开(公告)号：US09147824B1

    公开(公告)日：2015-09-29

    申请号：US14272889

    申请日：2014-05-08

    Applicant: International Business Machines Corporation

    Inventor： Qing Cao ,  Shu-Jen Han

    IPC: H01L21/44 ,  H01L21/06 ,  H01L39/24 ,  H01L29/40 ,  H01L49/02 ,  H01L21/02

    CPC classification number: H01L39/2412 ,  H01L21/02485 ,  H01L21/02568 ,  H01L21/0259 ,  H01L21/02658 ,  H01L21/02664 ,  H01L21/44 ,  H01L28/60 ,  H01L29/24 ,  H01L29/401 ,  H01L29/45 ,  H01L29/66969 ,  H01L29/778

    Abstract: Techniques for forming metal contacts to LMDC-based devices are provided. In one aspect, a method of forming a metal contact to a LMDC semiconductor material includes the steps of: depositing a contact metal onto the LMDC semiconductor material; and annealing the LMDC semiconductor material and the contact metal under conditions sufficient to react the contact metal with the LMDC semiconductor material and thereby form a buffer layer as an interface between the contact metal and the LMDC semiconductor material that compositionally is a transition from the LMDC semiconductor material to the contact metal and connects the LMDC semiconductor material and the contact metal by covalent bonds. The LMDC semiconductor material can be a material having a formula MX2, wherein M is a metal, and X is a chalcogen. A LMDC-based device and techniques for forming the device are also provided.

    Abstract translation: 提供了用于形成基于LMDC的器件的金属触点的技术。 一方面，向LMDC半导体材料形成金属接触的方法包括以下步骤：将接触金属沉积到LMDC半导体材料上; 以及在足以使接触金属与LMDC半导体材料反应的条件下退火LMDC半导体材料和接触金属，从而形成作为接触金属和LMDC半导体材料之间的界面的缓冲层，其组成是从LMDC半导体 材料接触金属，并通过共价键连接LMDC半导体材料和接触金属。 LMDC半导体材料可以是具有式MX2的材料，其中M是金属，X是硫属元素。 还提供了一种基于LMDC的设备和用于形成设备的技术。

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