公开(公告)号：US20180019266A1

公开(公告)日：2018-01-18

申请号：US15607863

申请日：2017-05-30

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Jun Koyama ,  Hideaki Kuwabara ,  Saishi Fujikawa

IPC: H01L27/12 ,  G02F1/1345 ,  H01L27/15 ,  H01L29/66

Abstract: In a display device such as a liquid crystal display device, a large-sized display screen is realized under low power consumption. A surface of a source wiring line of a pixel portion employed in an active matrix type liquid crystal display device is processed by way of a plating process operation so as to lower a resistance value of this source wiring line. The source wiring line of the pixel portion is manufactured at a step different from a step for manufacturing a source wiring line of a drive circuit portion. Further, electrodes of a terminal portion are processed by a plating process operation so as to reduce a resistance value thereof.

公开(公告)号：US09869907B2

公开(公告)日：2018-01-16

申请号：US15131301

申请日：2016-04-18

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Jun Koyama

IPC: H01L29/12 ,  H01L29/786 ,  G02F1/1343 ,  G02F1/1345 ,  G02F1/1362 ,  H01L27/12 ,  G02F1/1333 ,  G02F1/1335 ,  G02F1/1337 ,  G02F1/1339 ,  G02F1/1368 ,  H01L21/02 ,  H01L29/423 ,  H01L29/45 ,  H01L29/49

CPC classification number: G02F1/134336 ,  G02F1/133345 ,  G02F1/133512 ,  G02F1/133514 ,  G02F1/133784 ,  G02F1/13394 ,  G02F1/134363 ,  G02F1/13439 ,  G02F1/13454 ,  G02F1/1362 ,  G02F1/136213 ,  G02F1/136227 ,  G02F1/136286 ,  G02F1/1368 ,  G02F2201/123 ,  H01L21/02675 ,  H01L27/1214 ,  H01L27/1222 ,  H01L27/124 ,  H01L27/1248 ,  H01L27/1255 ,  H01L27/1274 ,  H01L27/1288 ,  H01L29/42384 ,  H01L29/458 ,  H01L29/4908 ,  H01L29/786 ,  H01L29/78621 ,  H01L29/78627 ,  H01L29/78633 ,  H01L29/78645 ,  H01L29/78675 ,  H01L2029/7863

Abstract: The present invention improves the aperture ratio of a pixel of a reflection-type display device or a reflection type display device without increasing the number of masks and without using a blackmask. A pixel electrode (167) is arranged so as to partially overlap a source wiring (137) for shielding the gap between pixels from light, and a thin film transistor is arranged so as to partially overlap a gate wiring (166) for shielding a channel region of the thin film transistor from light, thereby realizing a high pixel aperture ratio.

公开(公告)号：US09842863B2

公开(公告)日：2017-12-12

申请号：US15134910

申请日：2016-04-21

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Hajime Kimura ,  Hiroyuki Miyake ,  Jun Koyama

IPC: H01L27/12 ,  H01L27/32 ,  H01L27/02

CPC classification number: H01L27/1244 ,  H01L27/0296 ,  H01L27/1225 ,  H01L27/124 ,  H01L27/1248 ,  H01L27/3248 ,  H01L27/3276 ,  H01L2227/323

Abstract: To provide a novel display device. The display device includes a pixel portion, a driver circuit portion that is provided outside the pixel portion, and a protection circuit that is electrically connected to one of or both the pixel portion and the driver circuit portion and includes a pair of electrodes. The pixel portion includes pixel electrodes arranged in a matrix and transistors electrically connected to the pixel electrodes. The transistor includes a first insulating layer containing nitrogen and silicon, and a second insulating layer containing oxygen, nitrogen, and silicon. The protection circuit includes the first insulating layer between the pair of electrodes.

公开(公告)号：US20170309695A1

公开(公告)日：2017-10-26

申请号：US15641556

申请日：2017-07-05

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Jun Koyama ,  Masato Yonezawa ,  Hajime Kimura ,  Yu Yamazaki

IPC: H01L27/32 ,  G09G3/3258 ,  H04N3/14 ,  G09G3/3266 ,  H01L27/146 ,  H01L51/00 ,  H01L29/786 ,  H01L27/15 ,  H04N5/225

CPC classification number: H01L27/3269 ,  G09G3/3258 ,  G09G3/3266 ,  G09G2300/0809 ,  G09G2310/0286 ,  G09G2310/0291 ,  G09G2320/0646 ,  H01L27/14623 ,  H01L27/14632 ,  H01L27/14643 ,  H01L27/14678 ,  H01L27/14687 ,  H01L27/15 ,  H01L27/323 ,  H01L27/3234 ,  H01L27/3244 ,  H01L27/3246 ,  H01L27/3248 ,  H01L27/3258 ,  H01L27/3262 ,  H01L27/3265 ,  H01L27/3276 ,  H01L29/78672 ,  H01L51/0097 ,  H01L2251/5338 ,  H04N3/155 ,  H04N5/2251 ,  H04N5/374

Abstract: An area sensor of the present invention has a function of displaying an image in a sensor portion by using light-emitting elements and a reading function using photoelectric conversion devices. Therefore, an image read in the sensor portion can be displayed thereon without separately providing an electronic display on the area sensor. Furthermore, a photoelectric conversion layer of a photodiode according to the present invention is made of an amorphous silicon film and an N-type semiconductor layer and a P-type semiconductor layer are made of a polycrystalline silicon film. The amorphous silicon film is formed to be thicker than the polycrystalline silicon film. As a result, the photodiode according to the present invention can receive more light.

公开(公告)号：US09793335B2

公开(公告)日：2017-10-17

申请号：US14982070

申请日：2015-12-29

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Jun Koyama ,  Mai Osada

IPC: H01L27/15 ,  H01L27/32 ,  H01L27/12 ,  H01L51/56

CPC classification number: H01L27/3279 ,  H01L27/1214 ,  H01L27/3223 ,  H01L27/3246 ,  H01L27/3276 ,  H01L51/56 ,  H01L2227/323 ,  H01L2924/0002 ,  H01L2924/00

Abstract: There is provided a light emitting device in which low power consumption can be realized even in the case of a large screen. The surface of a source signal line or a power supply line in a pixel portion is plated to reduce a resistance of a wiring. The source signal line in the pixel portion is manufactured by a step different from a source signal line in a driver circuit portion. The power supply line in the pixel portion is manufactured by a step different from a power supply line led on a substrate. A terminal is similarly plated to made the resistance reduction. It is desirable that a wiring before plating is made of the same material as a gate electrode and the surface of the wiring is plated to form the source signal line or the power supply line.

公开(公告)号：US09747852B2

公开(公告)日：2017-08-29

申请号：US15007999

申请日：2016-01-27

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Jun Koyama ,  Hiroyuki Miyake

IPC: G09G3/36 ,  G06F3/041 ,  G06F3/042 ,  G06F3/044 ,  G02F1/1345

Abstract: The liquid crystal display device includes a first substrate provided with a terminal portion, a switching transistor, a driver circuit portion, and a pixel circuit portion including a pixel transistor and a plurality of pixels, a second substrate provided with a common electrode electrically connected to the terminal portion through the switching transistor, and liquid crystal between a pixel electrode and the common electrode. In a period during which a still image is switched to a moving image, the following steps are sequentially performed: a first step of supplying the common potential to the common electrode; a second step of supplying a power supply voltage to the driver circuit portion; a third step of supplying a clock signal to the driver circuit portion; and a fourth step of supplying a start pulse signal to the driver circuit portion.

公开(公告)号：US09711651B2

公开(公告)日：2017-07-18

申请号：US14849928

申请日：2015-09-10

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Junichiro Sakata ,  Jun Koyama

IPC: H01L29/10 ,  H01L29/786 ,  H01L27/12 ,  H01L29/66 ,  H01L29/24 ,  H01L21/02

CPC classification number: H01L29/7869 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02631 ,  H01L27/1225 ,  H01L27/124 ,  H01L29/24 ,  H01L29/66969 ,  H01L29/78696

Abstract: A semiconductor device which includes a thin film transistor having an oxide semiconductor layer and excellent electrical characteristics is provided. Further, a method for manufacturing a semiconductor device in which plural kinds of thin film transistors of different structures are formed over one substrate to form plural kinds of circuits and in which the number of steps is not greatly increased is provided. After a metal thin film is formed over an insulating surface, an oxide semiconductor layer is formed thereover. Then, oxidation treatment such as heat treatment is performed to oxidize the metal thin film partly or entirely. Further, structures of thin film transistors are different between a circuit in which emphasis is placed on the speed of operation, such as a logic circuit, and a matrix circuit.

公开(公告)号：US09685447B2

公开(公告)日：2017-06-20

申请号：US15175190

申请日：2016-06-07

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Jun Koyama ,  Kiyoshi Kato

IPC: H01L29/10 ,  H01L29/12 ,  H01L27/105 ,  H01L27/12 ,  H01L29/24 ,  H01L29/16 ,  G11C11/405 ,  G11C16/04 ,  H01L27/115 ,  H01L27/11551 ,  H01L27/1156 ,  H01L27/118 ,  H01L29/786 ,  H01L21/822 ,  H01L27/06 ,  H01L27/108 ,  H01L29/78

CPC classification number: H01L27/1052 ,  G11C11/405 ,  G11C16/0433 ,  G11C2211/4016 ,  H01L21/8221 ,  H01L27/0688 ,  H01L27/105 ,  H01L27/108 ,  H01L27/115 ,  H01L27/11551 ,  H01L27/1156 ,  H01L27/11803 ,  H01L27/1207 ,  H01L27/1225 ,  H01L27/124 ,  H01L27/1255 ,  H01L29/16 ,  H01L29/24 ,  H01L29/247 ,  H01L29/7833 ,  H01L29/7869 ,  H01L29/78693 ,  H01L29/78696

Abstract: An object is to provide a semiconductor device with a novel structure. The semiconductor device includes a first wiring; a second wiring; a third wiring; a fourth wiring; a first transistor having a first gate electrode, a first source electrode, and a first drain electrode; and a second transistor having a second gate electrode, a second source electrode, and a second drain electrode. The first transistor is provided in a substrate including a semiconductor material. The second transistor includes an oxide semiconductor layer.

公开(公告)号：US20170162642A1

公开(公告)日：2017-06-08

申请号：US15433007

申请日：2017-02-15

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Makoto Udagawa ,  Masahiko Hayakawa ,  Jun Koyama ,  Mitsuaki Osame ,  Aya Anzai

IPC: H01L27/32

CPC classification number: H01L27/3262 ,  H01L27/12 ,  H01L27/1222 ,  H01L27/124 ,  H01L27/3276 ,  H01L29/78675 ,  H01L29/78696 ,  H01L51/52

Abstract: The present invention provides a TFT that has a channel length particularly longer than that of an existing one, specifically, several tens to several hundreds times longer than that of the existing one, and thereby allowing turning to an on-state at a gate voltage particularly higher than the existing one and driving, and allowing having a low channel conductance gd. According to the present invention, not only the simple dispersion of on-current but also the normalized dispersion thereof can be reduced, and other than the reduction of the dispersion between the individual TFTs, the dispersion of the OLEDs themselves and the dispersion due to the deterioration of the OLED can be reduced.

公开(公告)号：US09626913B2

公开(公告)日：2017-04-18

申请号：US14182351

申请日：2014-02-18

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Hajime Kimura ,  Jun Koyama

IPC: G09G3/3283 ,  H02J4/00 ,  G09G3/20 ,  G09G3/3241 ,  G09G3/325

CPC classification number: G09G3/3283 ,  G09G3/2007 ,  G09G3/3241 ,  G09G3/325 ,  G09G2300/0417 ,  G09G2300/0842 ,  G09G2300/0852 ,  G09G2310/0262 ,  G09G2310/0272 ,  G09G2310/0286 ,  G09G2310/0297 ,  G09G2320/0233 ,  H02J4/00 ,  Y10T307/696

Abstract: A current source circuit includes current sources that are each configured to receive an external set signal and to control an output current value based on the external set signal. A changing over circuit that is electrically connected to the current sources and a set of output lines selects one of the current sources to be electrically connected to each of the output lines.