公开(公告)号：US10108079B2

公开(公告)日：2018-10-23

申请号：US15796568

申请日：2017-10-27

Applicant: Soraa Laser Diode, Inc.

Inventor： James W. Raring ,  Paul Rudy

IPC: G03B21/20 ,  F21S41/14 ,  H01S5/34 ,  H04N9/31 ,  H04N13/334 ,  H04N13/337 ,  H04N13/363 ,  F21K9/64 ,  F21S8/10 ,  H01S5/343 ,  H04N13/04

Abstract: The present invention is directed to a laser light source for a vehicle.

公开(公告)号：US10096973B1

公开(公告)日：2018-10-09

申请号：US15453839

申请日：2017-03-08

Applicant: Soraa Laser Diode, Inc.

Inventor： James W. Raring ,  Matthew Schmidt ,  Bryan Ellis

IPC: H01S5/00 ,  H01S5/22 ,  H01S5/02 ,  H01S5/323 ,  H01S5/343 ,  H01S5/32 ,  H01S5/10

Abstract: A gallium- and nitrogen-containing laser device including an etched facet with surface treatment to improve an optical beam is disclosed.

公开(公告)号：US09972974B1

公开(公告)日：2018-05-15

申请号：US15410231

申请日：2017-01-19

Applicant: Soraa Laser Diode, Inc.

Inventor： Po Shan Hsu ,  Melvin McLaurin ,  Thiago P. Melo ,  James W. Raring

IPC: H01S5/343 ,  H01S5/20 ,  H01S5/30 ,  H01S5/042 ,  H01S5/22

CPC classification number: H01S5/34333 ,  H01S5/0425 ,  H01S5/20 ,  H01S5/2031 ,  H01S5/22 ,  H01S5/2201 ,  H01S5/222 ,  H01S5/3063 ,  H01S5/3086 ,  H01S5/3202 ,  H01S5/3211 ,  H01S5/3213 ,  H01S5/3214 ,  H01S5/3215 ,  H01S5/3216 ,  H01S5/3218 ,  H01S5/3219 ,  H01S5/34346 ,  H01S2304/02 ,  H01S2304/04

Abstract: In an example, the present invention provides a method for fabricating a light emitting device configured as a Group III-nitride based laser device. The method also includes forming a gallium containing epitaxial material overlying the surface region of a substrate member. The method includes forming a p-type (Al,In,Ga)N waveguiding material overlying the gallium containing epitaxial material under a predetermined process condition. The method includes maintaining the predetermined process condition such that an environment surrounding a growth of the p-type (Al,In,Ga)N waveguide material is substantially a molecular N2 rich gas environment. The method includes maintaining a temperature ranging from 725 C to 925 C during the formation of the p-type (Al,In,Ga)N waveguide material, although there may be variations. In an example, the predetermined process condition is substantially free from molecular H2 gas.

公开(公告)号：US09941665B1

公开(公告)日：2018-04-10

申请号：US15671384

申请日：2017-08-08

Applicant: Soraa Laser Diode, Inc.

Inventor： James W. Raring

IPC: H01S5/20 ,  H01S5/22 ,  H01S5/02 ,  H01S5/343 ,  H01S5/10

CPC classification number: H01S5/2201 ,  B82Y20/00 ,  H01S5/0014 ,  H01S5/0202 ,  H01S5/028 ,  H01S5/0287 ,  H01S5/1085 ,  H01S5/2009 ,  H01S5/2031 ,  H01S5/3202 ,  H01S5/3213 ,  H01S5/34333 ,  H01S5/4025

Abstract: Optical devices having a structured active region configured for selected wavelengths of light emissions are disclosed.

公开(公告)号：US20180097337A1

公开(公告)日：2018-04-05

申请号：US15820047

申请日：2017-11-21

Applicant: Soraa Laser Diode, Inc.

Inventor： James W. Raring ,  Mathew Schmidt ,  Christiane Poblenz

IPC: H01S5/343 ,  H01S5/227 ,  H01S5/20 ,  B82Y20/00 ,  H01S5/32 ,  H01S5/34 ,  H01S5/02 ,  H01S5/028 ,  H01S5/00 ,  H01S5/40

CPC classification number: H01S5/34333 ,  B82Y20/00 ,  H01S5/0014 ,  H01S5/0202 ,  H01S5/028 ,  H01S5/2009 ,  H01S5/227 ,  H01S5/3202 ,  H01S5/3213 ,  H01S5/3407 ,  H01S5/4025

Abstract: A low voltage laser device having an active region configured for one or more selected wavelengths of light emissions.

公开(公告)号：US09882353B2

公开(公告)日：2018-01-30

申请号：US15356302

申请日：2016-11-18

Applicant: Soraa Laser Diode, Inc.

Inventor： Po Shan Hsu ,  Melvin McLaurin ,  James W. Raring ,  Alexander Sztein ,  Benyamin Buller

IPC: H01L21/00 ,  H01S5/343 ,  H01S5/02 ,  H01S5/042 ,  H01S5/22

CPC classification number: H01S5/34333 ,  H01S5/0202 ,  H01S5/0215 ,  H01S5/0217 ,  H01S5/0425 ,  H01S5/22 ,  H01S2304/00

Abstract: A method for fabricating a laser diode device includes providing a gallium and nitrogen containing substrate member having a surface region, forming a patterned dielectric material overlying the surface region to expose a portion of the surface region within a vicinity of an recessed region of the patterned dielectric material and maintaining an upper portion of the patterned dielectric material overlying covered portions of the surface region, and performing a lateral epitaxial growth overlying the exposed portion of the surface region to fill the recessed region and causing a thickness of the lateral epitaxial growth to be formed overlying the upper portion of the patterned dielectric material. The method also includes forming an n-type gallium and nitrogen containing material, forming an active region, and forming a p-type gallium and nitrogen containing material. The method further includes forming a waveguide structure in the p-type gallium and nitrogen containing material.

公开(公告)号：US09837790B1

公开(公告)日：2017-12-05

申请号：US15173457

申请日：2016-06-03

Applicant: Soraa Laser Diode, Inc.

Inventor： James W. Raring ,  Mathew C. Schmidt ,  Yu-Chia Chang

IPC: H01S5/042 ,  H01S5/343 ,  H01S5/22 ,  H01S5/34 ,  H01S5/065

CPC classification number: H01S5/0427 ,  B82Y20/00 ,  H01L33/0045 ,  H01L33/06 ,  H01S5/0425 ,  H01S5/0651 ,  H01S5/0652 ,  H01S5/2031 ,  H01S5/22 ,  H01S5/3202 ,  H01S5/34 ,  H01S5/3407 ,  H01S5/3414 ,  H01S5/34333 ,  H01S5/405 ,  H01S5/4087 ,  H01S2301/02

Abstract: A system and method for providing laser diodes with broad spectrum is described. GaN-based laser diodes with broad or multi-peaked spectral output operating are obtained in various configurations by having a single laser diode device generating multiple-peak spectral outputs, operate in superluminescene mode, or by use of an RF source and/or a feedback signal. In some other embodiments, multi-peak outputs are achieved by having multiple laser devices output different lasers at different wavelengths.

公开(公告)号：US09835296B2

公开(公告)日：2017-12-05

申请号：US15159595

申请日：2016-05-19

Applicant: Soraa Laser Diode, Inc.

Inventor： Eric Goutain ,  James W. Raring ,  Paul Rudy ,  Hua Huang

IPC: H01S5/00 ,  F21K99/00 ,  G02B6/27 ,  F21K9/60 ,  H01S5/022 ,  H01S5/024 ,  H01S5/22 ,  H01S5/343 ,  H01S5/40 ,  B82Y20/00 ,  G02B6/42 ,  F21V29/71 ,  F21V29/83 ,  F21V9/16 ,  F21V23/06 ,  F21V8/00 ,  H01S5/323 ,  F21K9/62 ,  F21K9/64 ,  G02B6/26 ,  H01S5/028 ,  H01S5/042 ,  F21Y115/30 ,  F21Y115/10 ,  F21Y101/00

CPC classification number: F21K9/60 ,  B82Y20/00 ,  F21K9/62 ,  F21K9/64 ,  F21V9/30 ,  F21V23/06 ,  F21V29/713 ,  F21V29/83 ,  F21Y2101/00 ,  F21Y2115/10 ,  F21Y2115/30 ,  G02B6/0005 ,  G02B6/26 ,  G02B6/27 ,  G02B6/4214 ,  G02B6/4249 ,  H01L2224/45124 ,  H01L2224/48091 ,  H01L2924/00014 ,  H01S5/0021 ,  H01S5/005 ,  H01S5/0085 ,  H01S5/0092 ,  H01S5/02208 ,  H01S5/02224 ,  H01S5/02236 ,  H01S5/02252 ,  H01S5/02276 ,  H01S5/02284 ,  H01S5/02292 ,  H01S5/02469 ,  H01S5/02476 ,  H01S5/0287 ,  H01S5/0425 ,  H01S5/2201 ,  H01S5/32341 ,  H01S5/3235 ,  H01S5/34333 ,  H01S5/4012 ,  H01S5/4025 ,  H01S5/4031 ,  H01S5/4056 ,  H01S2301/14 ,  H01S2304/04

Abstract: A method and device for emitting electromagnetic radiation at high power using nonpolar or semipolar gallium containing substrates such as GaN, AlN, InN, InGaN, AlGaN, and AlInGaN, is provided. In various embodiments, the laser device includes plural laser emitters emitting green or blue laser light, integrated a substrate.

公开(公告)号：US09829778B2

公开(公告)日：2017-11-28

申请号：US14743971

申请日：2015-06-18

Applicant: Soraa Laser Diode, Inc.

Inventor： James W. Raring ,  Paul Rudy

IPC: G03B21/20 ,  H04N5/74 ,  H04N9/31 ,  H04N13/04

CPC classification number: G03B21/2033 ,  H04N5/74 ,  H04N5/7441 ,  H04N5/7475 ,  H04N9/31 ,  H04N9/3129 ,  H04N9/3132 ,  H04N13/398 ,  H04N2005/745 ,  H04N2005/7483

Abstract: The present invention is directed to a laser light source.

公开(公告)号：US09755398B2

公开(公告)日：2017-09-05

申请号：US15173441

申请日：2016-06-03

Applicant: Soraa Laser Diode, Inc.

Inventor： Alexander Sztein ,  Melvin McLaurin ,  Po Shan Hsu ,  James W. Raring

IPC: H01L21/00 ,  H01S5/02 ,  H01S5/022 ,  H01S5/32 ,  H01S5/343

CPC classification number: H01S5/0203 ,  H01S5/0202 ,  H01S5/0205 ,  H01S5/0215 ,  H01S5/0217 ,  H01S5/0224 ,  H01S5/3202 ,  H01S5/34333 ,  H01S5/34346

Abstract: In an example, the present invention provides a method for manufacturing a gallium and nitrogen containing laser diode device. The method includes providing a gallium and nitrogen containing substrate having a surface region and forming epitaxial material overlying the surface region, the epitaxial material comprising an n-type cladding region, an active region comprising of at least one active layer overlying the n-type cladding region, and a p-type cladding region overlying the active layer region. The method includes patterning the epitaxial material to form a plurality of dice, each of the dice corresponding to at least one laser device, characterized by a first pitch between a pair of dice, the first pitch being less than a design width. The method includes transferring each of the plurality of dice to a carrier wafer such that each pair of dice is configured with a second pitch between each pair of dice, the second pitch being larger than the first pitch corresponding to the design width.