公开(公告)号：US07093559B2

公开(公告)日：2006-08-22

申请号：US09825611

申请日：2001-04-03

申请人： Sujit Sharan ,  Gurtej S. Sandhu

发明人： Sujit Sharan ,  Gurtej S. Sandhu

IPC分类号： C23C16/44

CPC分类号： C23C16/14 ,  C23C16/08 ,  C23C16/34 ,  H01J37/32321 ,  H01L21/28556 ,  H01L21/28568 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48471 ,  H01L2924/00014 ,  H01L2924/01012 ,  H01L2924/01019 ,  H01L2924/01029 ,  H01L2924/04941 ,  H01L2924/19041 ,  H01L2924/00 ,  H01L2224/48227 ,  H01L2224/4554

摘要： A process for PECVD of selected material films on a substrate comprising the steps of placing a substrate in a PECVD chamber and maintaining the chamber under vacuum pressure while introducing a precursor gas, a reactant gas, and an ionization enhancer agent into the chamber. A plasma is generated from the gases within the chamber. The energy generating the plasma causes the formation of charged species. The resulting charged species of the ionization enhancer agent assists in the formation of chemically reactive species of at least the precursor.

摘要翻译： 一种用于衬底上所选材料膜的PECVD的方法，包括以下步骤：将衬底放置在PECVD腔室中，并将腔室保持在真空压力下，同时将前体气体，反应气体和电离增强剂引入腔室。 从室内的气体产生等离子体。 产生等离子体的能量导致带电物质的形成。 所得到的电离增强剂的带电物质有助于形成至少前体的化学反应性物质。

公开(公告)号：US07060637B2

公开(公告)日：2006-06-13

申请号：US10435791

申请日：2003-05-12

申请人： Weimin Li ,  Gurtej S. Sandhu

发明人： Weimin Li ,  Gurtej S. Sandhu

IPC分类号： H01L21/47 ,  C08J7/04

CPC分类号： G03F7/095 ,  G03F7/0757 ,  H01L21/02134 ,  H01L21/02137 ,  H01L21/02216 ,  H01L21/02222 ,  H01L21/02282 ,  H01L21/02348 ,  H01L21/311 ,  Y10T428/31663

摘要： A cap layer that enables a photopatternable, spin-on material to be used in the formation of semiconductor device structures at wavelengths that were previously unusable. The photopatternable, spin-on material is applied as a layer to a semiconductor substrate. The cap layer and a photoresist layer are each formed over the photopatternable layer. The cap layer absorbs or reflects radiation and protects the photopatternable layer from a first wavelength of radiation used in patterning the photoresist layer. The photopatternable, spin-on material is convertible to a silicon dioxide-based material upon exposure to a second wavelength of radiation.

摘要翻译： 能够使光可图案化的旋涂材料用于以前不可用的波长形成半导体器件结构的盖层。 将可光刻图案的旋涂材料作为层施加到半导体衬底。 覆盖层和光致抗蚀剂层各自形成在光图案化层上。 盖层吸收或反射辐射，并保护光致图案层免受用于图案化光致抗蚀剂层的第一波长的辐射。 照射图案化的旋涂材料在暴露于第二波长辐射时可转换为二氧化硅基材料。

公开(公告)号：US07053432B2

公开(公告)日：2006-05-30

申请号：US09882534

申请日：2001-06-14

申请人： Garo J. Derderian ,  Gurtej S. Sandhu

发明人： Garo J. Derderian ,  Gurtej S. Sandhu

IPC分类号： H01L27/108

CPC分类号： H01L21/3162 ,  H01L21/02178 ,  H01L21/0228 ,  H01L28/56 ,  H01L28/84 ,  H01L28/91

摘要： A capacitor fabrication method may include forming a first capacitor electrode over a substrate and atomic layer depositing an insulative barrier layer to oxygen diffusion over the first electrode. A capacitor dielectric layer may be formed over the first electrode and a second capacitor electrode may be formed over the dielectric layer. The barrier layer may include Al2O3. A capacitor fabrication method may also include forming a first capacitor electrode over a substrate, chemisorbing a layer of a first precursor at least one monolayer thick over the first electrode, and chemisorbing a layer of a second precursor at least one monolayer thick on the first precursor layer. A chemisorption product of the first and second precursors may be comprised by a layer of an insulative barrier material. The first precursor may include H2O and the second precursor may include trimethyl aluminum.

摘要翻译： 电容器制造方法可以包括在衬底上形成第一电容器电极，并且将原子层沉积在第一电极上的氧扩散的绝缘阻挡层上。 可以在第一电极上形成电容器电介质层，并且可以在电介质层上形成第二电容器电极。 阻挡层可以包括Al 2 O 3 3。 电容器制造方法还可以包括在衬底上形成第一电容器电极，在第一电极上化学吸附至少一层单层厚度的第一前体层，以及化学吸附第一前体上的至少一层单层的第二前体层 层。 第一和第二前体的化学吸附产物可以由绝缘屏障材料层构成。 第一前体可以包括H 2 O，第二前体可以包括三甲基铝。

公开(公告)号：US07026642B2

公开(公告)日：2006-04-11

申请号：US10649058

申请日：2003-08-27

申请人： Gurtej S. Sandhu

发明人： Gurtej S. Sandhu

IPC分类号： H01L29/06

CPC分类号： B82Y10/00 ,  H01L29/7888 ,  Y10S977/943

摘要： The disclosed embodiments relate to a vertical tunneling transistor that may include a channel disposed on a substrate. A quantum dot may be disposed so that an axis through the channel and the quantum dot is substantially perpendicular to the substrate. A gate may be disposed so that an axis through the channel, the quantum dot and the gate is substantially perpendicular to the substrate.

摘要翻译： 所公开的实施例涉及可包括设置在基板上的通道的垂直隧道晶体管。 可以设置量子点使得通过沟道和量子点的轴线基本上垂直于衬底。 可以设置栅极，使得通过沟道，量子点和栅极的轴线基本上垂直于衬底。

公开(公告)号：US07015532B2

公开(公告)日：2006-03-21

申请号：US10386337

申请日：2003-03-10

申请人： Gurtej S. Sandhu ,  Pierre C. Fazan

发明人： Gurtej S. Sandhu ,  Pierre C. Fazan

IPC分类号： H01L27/108

CPC分类号： H01L21/7687 ,  H01L21/76846 ,  H01L21/76849 ,  H01L21/76855 ,  H01L21/76895 ,  H01L27/10852 ,  H01L27/10855 ,  H01L27/11502 ,  H01L27/11507 ,  H01L28/55 ,  H01L28/60 ,  H01L28/75

摘要： A storage cell capacitor and a method for forming the storage cell capacitor having a storage node electrode including a barrier layer interposed between a conductive plug and an oxidation resistant layer. A layer of titanium silicide is fabricated to lie between the conductive plug and the oxidation resistant layer. An insulative layer protects the sidewalls of the barrier layer during the deposition and anneal of a dielectric layer having a high dielectric constant.

公开(公告)号：US07001481B2

公开(公告)日：2006-02-21

申请号：US09998073

申请日：2001-11-30

申请人： Gurtej S. Sandhu ,  Trung T. Doan

发明人： Gurtej S. Sandhu ,  Trung T. Doan

IPC分类号： C23F1/00

CPC分类号： H01L21/67069

摘要： A method and system providing a high flux of point of use activated reactive species for semiconductor processing wherein a workpiece is exposed to a gaseous atmosphere containing a transmission gas that is substantially nonattenuating to preselected wavelengths of electromagnetic radiation. A laminar flow of a gaseous constituent is also provided over a substantially planar surface of the workpiece wherein a beam of the electromagnetic radiation is directed into the gaseous atmosphere such that it converges in the laminar flow to provide maximum beam energy in close proximity to the surface of the workpiece, but spaced a finite distance therefrom. The gaseous constituent is dissociated by the beam producing an activated reactive species that reacts with the surface of the workpiece.

公开(公告)号：US06953743B2

公开(公告)日：2005-10-11

申请号：US10637108

申请日：2003-08-08

申请人： Gurtej S. Sandhu ,  Trung T. Doan ,  Tyler A. Lowrey

发明人： Gurtej S. Sandhu ,  Trung T. Doan ,  Tyler A. Lowrey

IPC分类号： C23C16/34 ,  H01L21/285 ,  H01L21/768 ,  H01L21/4763 ,  H01L21/44

CPC分类号： H01L21/76855 ,  C23C16/34 ,  H01L21/28518 ,  H01L21/28556 ,  H01L21/28568 ,  H01L21/76843 ,  H01L21/76846 ,  H01L21/76856 ,  H01L21/76862

摘要： A contact structure is provided incorporating an amorphous titanium nitride barrier layer formed via low-pressure chemical vapor deposition (LPCVD) utilizing tetrakis-dialkylamido-titanium, Ti(NMe2)4, as the precursor. The contact structure is fabricated by etching a contact opening through a dielectric layer down to a diffusion region to which electrical contact is to be made. Titanium metal is deposited over the surface of the wafer so that the exposed surface of the diffusion region is completely covered by a layer of the metal. At least a portion of the titanium metal layer is eventually converted to titanium silicide, thus providing an excellent conductive interface at the surface of the diffusion region. A titanium nitride barrier layer is then deposited using the LPCVD process, coating the walls and floor of the contact opening. Chemical vapor deposition of polycrystalline silicon or of a metal follows.

公开(公告)号：US06943107B2

公开(公告)日：2005-09-13

申请号：US10915935

申请日：2004-08-10

申请人： Gurtej S. Sandhu ,  Sujit Sharan

发明人： Gurtej S. Sandhu ,  Sujit Sharan

IPC分类号： H01L21/20 ,  H01L21/28 ,  H01L21/285 ,  H01L21/3205 ,  H01L21/44

CPC分类号： H01L21/02667 ,  C30B1/02 ,  C30B29/34 ,  H01L21/2022 ,  H01L21/28061 ,  H01L21/28247 ,  H01L21/28518 ,  H01L21/32053 ,  H01L29/7842

摘要： A method of forming a crystalline phase material includes, a) providing a stress inducing material within or operatively adjacent a crystalline material of a first crystalline phase; and b) annealing the crystalline material of the first crystalline phase under conditions effective to transform it to a second crystalline phase. The stress inducing material preferably induces compressive stress within the first crystalline phase during the anneal to the second crystalline phase to lower the required activation energy to produce a more dense second crystalline phase. Example compressive stress inducing layers include SiO2 and Si3N4, while example stress inducing materials for providing into layers are Ge, W and Co. Where the compressive stress inducing material is provided on the same side of a wafer over which the crystalline phase material is provided, it is provided to have a thermal coefficient of expansion which is less than the first phase crystalline material. Where the compressive stress inducing material is provided on the opposite side of a wafer over which the crystalline phase material is provided, it is provided to have a thermal coefficient of expansion which is greater than the first phase crystalline material. Example and preferred crystalline phase materials having two phases are refractory metal silicides, such as TiSix.

摘要翻译： 形成结晶相材料的方法包括：a）在第一结晶相的结晶材料内部或在其中邻近的第一结晶相中提供应力诱导材料; 和b）在有效地将其转变成第二结晶相的条件下退火第一结晶相的结晶材料。 应力诱导材料优选在与第二结晶相退火期间在第一结晶相内诱导压应力，以降低所需的活化能以产生更致密的第二结晶相。 示例性压缩应力诱导层包括SiO 2和Si 3 N 4，而用于提供层的应力诱导材料是Ge，W和Co 在压应力诱导材料设置在其上提供结晶相材料的晶片的相同侧上时，其被设置为具有小于第一相结晶材料的热膨胀系数。 在压应力诱导材料设置在提供结晶相材料的晶片的相对侧上的情况下，其被设置为具有大于第一相结晶材料的热膨胀系数。 具有两相的实例和优选结晶相材料是难熔金属硅化物，例如TiSi x x。

公开(公告)号：US06930058B2

公开(公告)日：2005-08-16

申请号：US10420246

申请日：2003-04-21

申请人： Chris W. Hill ,  Weimin Li ,  Gurtej S. Sandhu

发明人： Chris W. Hill ,  Weimin Li ,  Gurtej S. Sandhu

IPC分类号： C23C16/40 ,  C23C16/44 ,  C23C16/455 ,  H01L21/316 ,  H01L21/31 ,  H01L21/469 ,  H01L21/76 ,  H01L21/8238

CPC分类号： C23C16/45523 ,  C23C16/401 ,  H01L21/02126 ,  H01L21/02129 ,  H01L21/02271 ,  H01L21/31625

摘要： A substrate is positioned within a deposition chamber. At least two gaseous precursors are fed to the chamber which collectively comprise silicon, an oxidizer comprising oxygen and dopant which become part of the deposited doped silicon dioxide. The feeding is over at least two different time periods and under conditions effective to deposit a doped silicon dioxide layer on the substrate. The time periods and conditions are characterized by some period of time when one of said gaseous precursors comprising said dopant is flowed to the chamber in the substantial absence of flowing any of said oxidizer precursor. In one implementation, the time periods and conditions are effective to at least initially deposit a greater quantity of doped silicon dioxide within at least some gaps on the substrate as compared to any doped silicon dioxide deposited atop substrate structure which define said gaps.

摘要翻译： 衬底位于沉积室内。 将至少两种气体前体进料到共同包含硅的室，包含氧和掺杂剂的氧化剂成为沉积的掺杂二氧化硅的一部分。 进料至少在两个不同的时间段内并且在有效沉积掺杂的二氧化硅层的条件下在基板上。 时间段和条件的特征在于一段时间，其中一种所述包含所述掺杂剂的气态前体在基本上不流动任何所述氧化剂前体的情况下流动到所述室。 在一个实施方案中，与沉积在限定所述间隙的衬底结构上的任何掺杂二氧化硅相比，时间段和条件有效地至少在衬底上的至少一些间隙内沉积更大量的掺杂二氧化硅。

公开(公告)号：US06902985B2

公开(公告)日：2005-06-07

申请号：US10215513

申请日：2002-08-08

申请人： Garo J. Derderian ,  Gurtej S. Sandhu

发明人： Garo J. Derderian ,  Gurtej S. Sandhu

IPC分类号： H01L21/02 ,  H01L21/8242 ,  H01L21/20

CPC分类号： H01L28/84 ,  H01L27/10852 ,  Y10S438/964

摘要： A technique for forming a high surface area electrode or storage node for a capacitor and devices formed thereby, including depositing a first layer of conductive material on a substrate, such that a discontinuous layer is formed. A second conductive material layer is deposited over the discontinuous first conductive material layer, such that the second conductive material layer grows or accumulates on the discontinuous first conductive material layer at a faster rate than on the exposed areas of the substrate in the discontinuous first conductive material layer to form a rough conductive material layer.

摘要翻译： 一种用于形成用于电容器的高表面积电极或存储节点以及由此形成的器件的技术，包括在衬底上沉积第一导电材料层，从而形成不连续层。 在不连续的第一导电材料层上沉积第二导电材料层，使得第二导电材料层以不连续的第一导电材料中的衬底的暴露区域的速度比不连续的第一导电材料层生长或积聚 层以形成粗糙的导电材料层。