Thin film probe sheet and semiconductor chip inspection system
    11.
    发明申请
    Thin film probe sheet and semiconductor chip inspection system 审中-公开
    薄膜探针片和半导体芯片检测系统

    公开(公告)号:US20060094162A1

    公开(公告)日:2006-05-04

    申请号:US11253575

    申请日:2005-10-20

    IPC分类号: H01L21/50

    CPC分类号: G01R1/0735 Y10T29/49156

    摘要: In the highly accurate thin film probe sheet which is used for the contact to electrode pads disposed in high density with narrow pitches resulting from the increase in integration degree of semiconductor chips and for the inspection of semiconductor chips, a large spatial region in which a metal film selectively removable relative to terminal metal is formed in advance is formed in the peripheral region around minute contact terminals having sharp tips and disposed in high density with narrow pitches equivalent to those of the electrode pads. Thus, occurrence of damage in an inspection process is significantly reduced, and an inspection device simultaneously achieving the miniaturization and the durability can be provided.

    摘要翻译: 在用于与由半导体芯片的集成度增加和半导体芯片的检查而产生的窄间距高密度设置的电极焊盘接触的高精度薄膜探针片中,其中金属 在具有尖锐尖端的微小接触端子周围的周边区域中预先形成相对于端子金属可选择的膜,并以与电极焊盘相同的窄间距高密度地设置。 因此,检查过程中的损坏的发生显着减少,并且可以提供同时实现小型化和耐久性的检查装置。

    Thin film resistor and wiring board using the same
    19.
    发明授权
    Thin film resistor and wiring board using the same 失效
    薄膜电阻和使用其的接线板

    公开(公告)号:US5235313A

    公开(公告)日:1993-08-10

    申请号:US723608

    申请日:1991-07-01

    摘要: A thin film resistor having a characteristic that an increase phenomenon of a resistance controlled at a high temperature is generated. The resistor is obtained by controlling its composition and manufacturing method so as to suppress an increase in the resistance of a Cr-Si resistor thin film due to deposition of chromium silicide at a high temperature. A sputtering target, which is used as a raw material for forming the thin film, is made from chromium silicide and silicon so that some chromium silicide is already formed immediately after deposition, and chromium oxide and silicon oxide are contained in the thin film so as to suppress the speed whereat chromium and silicon, which do not form silicide, form silicide by heating after deposition and to allow the above silicide formation to advance slowly.

    摘要翻译: 具有产生在高温下控制的电阻增加现象的特性的薄膜电阻器。 通过控制其组成和制造方法来获得电阻器,以便抑制由于在高温下沉积硅化铬导致的Cr-Si电阻器薄膜的电阻增加。 用作形成薄膜的原料的溅射靶由硅化铬和硅制成,使得沉积后立即形成一些硅化铬,并且氧化铬和氧化硅被包含在薄膜中,以便 抑制不形成硅化物的铬和硅在沉积后通过加热形成硅化物,并允许上述硅化物形成缓慢进行。

    THIN FILM PROBE SHEET AND SEMICONDUCTOR CHIP INSPECTION SYSTEM
    20.
    发明申请
    THIN FILM PROBE SHEET AND SEMICONDUCTOR CHIP INSPECTION SYSTEM 审中-公开
    薄膜探针片和半导体芯片检查系统

    公开(公告)号:US20110014727A1

    公开(公告)日:2011-01-20

    申请号:US12883982

    申请日:2010-09-16

    IPC分类号: H01L21/66 H05K3/02

    CPC分类号: G01R1/0735 Y10T29/49156

    摘要: In the highly accurate thin film probe sheet which is used for the contact to electrode pads disposed in high density with narrow pitches resulting from the increase in integration degree of semiconductor chips and for the inspection of semiconductor chips, a large spatial region in which a metal film selectively removable relative to terminal metal is formed in advance is formed in the peripheral region around minute contact terminals having sharp tips and disposed in high density with narrow pitches equivalent to those of the electrode pads. Thus, occurrence of damage in an inspection process is significantly reduced, and an inspection device simultaneously achieving the miniaturization and the durability can be provided.

    摘要翻译: 在用于与由半导体芯片的集成度增加和半导体芯片的检查而产生的窄间距高密度设置的电极焊盘接触的高精度薄膜探针片中,其中金属 在具有尖锐尖端的微小接触端子周围的周边区域中预先形成相对于端子金属可选择的膜,并以与电极焊盘相同的窄间距高密度地设置。 因此,检查过程中的损坏的发生显着减少,并且可以提供同时实现小型化和耐久性的检查装置。