摘要:
In the highly accurate thin film probe sheet which is used for the contact to electrode pads disposed in high density with narrow pitches resulting from the increase in integration degree of semiconductor chips and for the inspection of semiconductor chips, a large spatial region in which a metal film selectively removable relative to terminal metal is formed in advance is formed in the peripheral region around minute contact terminals having sharp tips and disposed in high density with narrow pitches equivalent to those of the electrode pads. Thus, occurrence of damage in an inspection process is significantly reduced, and an inspection device simultaneously achieving the miniaturization and the durability can be provided.
摘要:
In the highly accurate thin film probe sheet which is used for the contact to electrode pads disposed in high density with narrow pitches resulting from the increase in integration degree of semiconductor chips and for the inspection of semiconductor chips, a large spatial region in which a metal film selectively removable relative to terminal metal is formed in advance is formed in the peripheral region around minute contact terminals having sharp tips and disposed in high density with narrow pitches equivalent to those of the electrode pads. Thus, occurrence of damage in an inspection process is significantly reduced, and an inspection device simultaneously achieving the miniaturization and the durability can be provided.
摘要:
In the connecting apparatus for inspecting the semiconductor chip, in which contact terminals are electrically connected to each of the plurality of electrode pads formed on the semiconductor chips, a part of metal projections in the shape of quadrangular pyramid which constitute the contact terminals is composed of insulator in the present invention. Therefore, the inspection of semiconductor chips performed by simultaneously transmitting high-speed signals to the plurality of minute electrode pads arranged at a narrow pitch on the semiconductor chips can be realized.
摘要:
The fabrication of a semiconductor integrated circuit device involves testing using a pushing mechanism that is constructed by forming, over the upper surface of a thin film probe, a reinforcing material having a linear expansion coefficient (thermal expansion coefficient) almost equal to that of a wafer to be tested; forming a groove in the reinforcing material above a contact terminal; placing an elastomer in the groove so that a predetermined amount projects out of the groove; and disposing a pusher and another elastomer to sandwich the pusher between the elastomers. With the use of such a probe, it is possible to improve the throughput of wafer-level electrical testing of a semiconductor integrated circuit.
摘要:
The fabrication of a semiconductor integrated circuit device involves testing using a pushing mechanism that is constructed by forming, over the upper surface of a thin film probe, a reinforcing material having a linear expansion coefficient (thermal expansion coefficient) almost equal to that of a wafer to be tested; forming a groove in the reinforcing material above a contact terminal; placing an elastomer in the groove so that a predetermined amount projects out of the groove; and disposing a pusher and another elastomer to sandwich the pusher between the elastomers. With the use of such a probe, it is possible to improve the throughput of wafer-level electrical testing of a semiconductor integrated circuit.
摘要:
The fabrication of a semiconductor integrated circuit device involves testing using a pushing mechanism that is constructed by forming, over the upper surface of a thin film probe, a reinforcing material having a linear expansion coefficient (thermal expansion coefficient) almost equal to that of a wafer to be tested; forming a groove in the reinforcing material above a contact terminal; placing an elastomer in the groove so that a predetermined amount projects out of the groove; and disposing a pusher and another elastomer to sandwich the pusher between the elastomers. With the use of such a probe, it is possible to improve the throughput of wafer-level electrical testing of a semiconductor integrated circuit.
摘要:
A semiconductor chip inspection apparatus largely reduces occurrence of damage due to foreign matter in an inspection process and improves durability at the same time of miniaturization is provided. As to a highly accurate thin-film probe sheet which performs: a contact to electrode pads arranged at a narrow pitch and a high density along with integration of semiconductor chip; and an inspection of semiconductor chips, by providing two layers of metal films selectively removable in a step-like shape in a periphery region of fine contact terminal having sharp tips and arranged at a high density and a narrow pitch at the same level as electrode pads, an upper periphery of the contact terminals is covered with an insulating film, and a large space region is formed.
摘要:
A probe sheet or a connecting sheet with good transmission characteristics and flexibility comprising contact terminals capable of contacting at a plurality of points and in high density, without applying damages on an electrode pad which is a contact subject is provided. Further, a high-speed transmission circuit capable of designing signal wirings with aligned impedance to have wide width even with a thin insulating film is achieved to provide a probe sheet or a connecting sheet with reduced loss of high-speed transmission signals. Moreover, the transmission circuit is applied to a probe card using a probe sheet, an inspecting method of (a method of manufacturing) a semiconductor device using the same, and a connecting sheet having an excellent high-frequency characteristic.
摘要:
A probe card has first contact terminals electrically connected to the fine-pitch electrodes of a test target; wirings drawn from the first contact terminals; and second contact terminals electrically connected to the wirings, wherein the first contact terminals are formed each using an anisotropically etched hole in a crystalline substrate, and a semiconductor device test method (fabrication method) using the probe card.
摘要:
In a prove card comprising: a probe sheet having a contact terminal contacting with an electrode provided on a wafer, a wiring led from the contact terminal, and an electrode electrically connected to the wiring; and a multilayered wiring substrate having an electrode electrically connected to the electrode of the probe sheet, wherein a contact between the contact terminal and the electrode of the wafer is established by one or more adhesion holder for pressing, from the backside of a terminal group of the terminal contacts, the terminal group via a press block with a spring to contact with the electrode pad. A device in which the probe sheet is attached to the adhesion holder and a plurality of chips are tested simultaneously by combining the adhesion holder.