公开(公告)号：US5493465A

公开(公告)日：1996-02-20

申请号：US209927

申请日：1994-03-14

Applicant: Yuzo Kamiguchi ,  Susumu Hashimoto ,  Atsuhito Sawabe ,  Hitoshi Iwasaki ,  Masashi Sahashi

Inventor： Yuzo Kamiguchi ,  Susumu Hashimoto ,  Atsuhito Sawabe ,  Hitoshi Iwasaki ,  Masashi Sahashi

IPC: G01R33/09 ,  G11B5/39 ,  H01L43/08

CPC classification number: B82Y25/00 ,  G01R33/093 ,  G11B5/3903 ,  H01L43/08

Abstract: A magnetoresistance effect element has a pair of ferromagnetic layers with a middle non-magnetic metallic layer interposed therebetween. The middle non-magnetic metallic layer has lamination structure of non-magnetic metallic thin films formed of at least two kinds of non-magnetic metallic materials. In the lamination structure of the non-magnetic metallic thin film, Fermi energies of the non-magnetic metallic thin films disposed on interface sides of the ferromagnetic layers has a value closer to a Fermi energy in a direction of spin whose electron spin dependent mean free path is long among Fermi energies of the ferromagnetic layers. A non-magnetic metallic thin film is disposed between such two non-magnetic metallic thin films. Difference in Fermi energy between non-magnetic metallic thin films made of two kinds of non-magnetic metallic materials is 0.5 eV or more. By the use of such a middle non-magnetic metallic layer, while the thickness thereof is as thin as possible, exchange coupling between ferromagnetic layers can be small. Thus, resistance change sensitivity can be enhanced.

Abstract translation: 磁阻效应元件具有介于其间的中间非磁性金属层的一对铁磁层。 中间非磁性金属层具有由至少两种非磁性金属材料形成的非磁性金属薄膜的叠层结构。 在非磁性金属薄膜的层压结构中，设置在铁磁层的界面侧上的非磁性金属薄膜的费米能量在旋转方向具有更接近费米能量的值，其电子自旋依赖平均自由度 在铁磁层的费米能量之间的路径很长。 这种非磁性金属薄膜之间设有非磁性金属薄膜。 由两种非磁性金属材料制成的非磁性金属薄膜之间的费米能的差异为0.5eV以上。 通过使用这样的中间非磁性金属层，虽然其厚度尽可能薄，铁磁层之间的交换耦合可以很小。 因此，可以提高电阻变化灵敏度。

公开(公告)号：US20250146122A1

公开(公告)日：2025-05-08

申请号：US19015943

申请日：2025-01-10

Applicant: Atsuhito Sawabe ,  Yutaka Kimura ,  National University Corporation Nagaoka University of Technology ,  WASEDA UNIVERSITY ,  DISCO Corporation

Inventor： Hideo Aida ,  Atsuhito Sawabe ,  Yutaka Kimura ,  Jun Mizuno ,  Ryuji Oshima

IPC: C23C14/14 ,  C30B23/02 ,  C30B25/18 ,  C30B29/02 ,  C30B33/00

Abstract: Provided are a structure for producing a high-quality single crystal diamond, and a method for manufacturing the structure for producing diamond. A structure for producing a diamond is composed of a base substrate and an Ir thin film formed on the base substrate. The thermal expansion coefficient of the base substrate is 5 times or less of the thermal expansion coefficient of diamond and the melting point of the base substrate is 700° C. or higher. The peak angle in the X-ray diffraction pattern of the Ir thin film is different from the peak angle in the X-ray diffraction pattern of the base substrate.

公开(公告)号：US12227828B2

公开(公告)日：2025-02-18

申请号：US17507417

申请日：2021-10-21

Applicant: National University Corporation Nagaoka University of Technology ,  Atsuhito Sawabe ,  Yutaka Kimura ,  WASEDA UNIVERSITY ,  DISCO Corporation

Inventor： Hideo Aida ,  Atsuhito Sawabe ,  Yutaka Kimura ,  Jun Mizuno ,  Ryuji Oshima

IPC: C23C16/02 ,  C23C14/14 ,  C23C16/27 ,  C30B23/02 ,  C30B25/18 ,  C30B29/02 ,  C30B33/00

Abstract: Provided are a structure for producing a high-quality single crystal diamond, and a method for manufacturing the structure for producing diamond. A structure for producing a diamond is composed of a base substrate and an Ir thin film formed on the base substrate. The thermal expansion coefficient of the base substrate is 5 times or less of the thermal expansion coefficient of diamond and the melting point of the base substrate is 700° C. or higher. The peak angle in the X-ray diffraction pattern of the Ir thin film is different from the peak angle in the X-ray diffraction pattern of the base substrate.

公开(公告)号：US09353458B2

公开(公告)日：2016-05-31

申请号：US12225570

申请日：2007-02-05

Applicant: Atsuhito Sawabe ,  Hitoshi Noguchi ,  Shintaro Maeda

Inventor： Atsuhito Sawabe ,  Hitoshi Noguchi ,  Shintaro Maeda

IPC: C30B23/02 ,  C30B25/10 ,  C30B25/18 ,  C30B29/02 ,  C30B29/04 ,  H01L21/02 ,  C23C16/27 ,  H01J37/32 ,  H01J37/34

CPC classification number: C30B23/02 ,  C23C16/272 ,  C30B25/105 ,  C30B25/18 ,  C30B29/02 ,  C30B29/04 ,  H01J37/32009 ,  H01J37/34 ,  H01J37/3447 ,  H01L21/0242 ,  H01L21/02433 ,  H01L21/02491 ,  H01L21/02516 ,  H01L21/02527 ,  H01L21/0262

Abstract: The present invention provides a base substrate for epitaxial diamond film capable of epitaxially growing a large area of high quality diamond, having a diameter of 1 inch (2.5 cm) or more, on an iridium base by using the CVD method, a method for producing the base substrate for epitaxial diamond film, an epitaxial diamond film produced with the base substrate for epitaxial diamond film and a method for producing the epitaxial diamond film. An iridium (Ir) film is formed by epitaxial growth on a single crystal magnesium oxide (MgO) substrate or a single crystal sapphire (α-Al2O3) substrate by means of a vacuum deposition method or a sputtering method, and a bias nucleus generation process of forming epitaxial diamond nuclei is applied to the surface of the iridium (Ir) base formed as a film by exposing an ion-containing direct current plasma to the surface of the iridium (Ir) base formed as a film.

Abstract translation: 本发明提供一种用于外延金刚石膜的基底，其能够通过使用CVD法在铱基上外延生长具有1英寸（2.5cm）或更大直径的大面积的高品质金刚石， 用于外延金刚石膜的基底衬底，用外延金刚石膜制成的外延金刚石膜和用于制造外延金刚石膜的方法。 通过真空沉积法或溅射法在单晶氧化镁（MgO）衬底或单晶蓝宝石（α-Al 2 O 3）衬底上外延生长形成铱（Ir）膜，并且偏置核生成工艺 通过将含离子的直流等离子体暴露于形成为膜的铱（Ir）基底的表面，将形成外延金刚石核的形成的铱（Ir）基底的表面施加于膜。

公开(公告)号：US06362940B1

公开(公告)日：2002-03-26

申请号：US09520633

申请日：2000-03-07

Applicant: Hiroaki Yoda ,  Atsuhito Sawabe ,  Hitoshi Iwasaki ,  Naoyuki Inoue ,  Akio Hori

Inventor： Hiroaki Yoda ,  Atsuhito Sawabe ,  Hitoshi Iwasaki ,  Naoyuki Inoue ,  Akio Hori

IPC: G11B539

CPC classification number: B82Y25/00 ,  B82Y10/00 ,  G11B5/3116 ,  G11B5/3163 ,  G11B5/3929 ,  G11B5/3967 ,  G11B2005/3996

Abstract: A recording-reproducing magnetic head comprising a magnetoresistance effect reproducing head and an inductive recording head. The magnetoresistance effect reproducing head having a magnetoresistance effect element and the inductive recording head having a lower magnetic core, an upper magnetic core, coils sandwiched between the lower and upper magnetic cores at their mid-parts, and a recording magnetic cores at leading end parts. The leading end parts of the lower and upper magnetic cores having a protruding part protruding to the recording magnetic gap layer and the upper magnetic core having a continuous magnetic body which extends from the protruding part to the mid-part. A center line of the protruding part of the lower magnetic core, which extends in a track length direction on a surface opposite a medium, intersecting the protruding part of the upper magnetic core.

Abstract translation: 一种记录再现磁头，包括磁阻效应再现头和感应记录头。 具有磁阻效应元件的磁电阻效应再现头和具有下磁芯，上磁芯，夹在下磁芯和上磁心之间的线圈的感应记录头及其前端部的记录磁芯 。 下磁芯和上磁芯的前端部具有突出部分，突出部分到记录磁隙层，上磁芯具有从突出部分延伸到中间部分的连续磁体。 下磁芯的突出部分的中心线，其在与介质相对的表面上的轨道长度方向上延伸，与上磁芯的突出部分相交。

公开(公告)号：US06198597B1

公开(公告)日：2001-03-06

申请号：US09153858

申请日：1998-09-16

Applicant: Kohichi Tateyama ,  Hiroaki Yoda ,  Atsuhito Sawabe ,  Naoyuki Inoue ,  Akio Hori ,  Tadahiko Kobayashi ,  Hiromi Sakata ,  Michiko Hara ,  Takasi Koizumi ,  Tomohiko Nagata ,  Takeo Sakakubo ,  Kei Sakoda

Inventor： Kohichi Tateyama ,  Hiroaki Yoda ,  Atsuhito Sawabe ,  Naoyuki Inoue ,  Akio Hori ,  Tadahiko Kobayashi ,  Hiromi Sakata ,  Michiko Hara ,  Takasi Koizumi ,  Tomohiko Nagata ,  Takeo Sakakubo ,  Kei Sakoda

IPC: G11B531

CPC classification number: G11B5/3113 ,  G11B5/3116 ,  G11B5/3163

Abstract: A thin-film magnetic head comprises a magnetic gap disposed to be positioned on an air bearing surface of the magnetic head, a pair of magnetic poles disposed to hold the magnetic gap therebetween, and a coil positioned between the pair of the magnetic poles to intersect the magnetic poles, wherein at least one of the magnetic poles being composed of a T-shaped magnetic pole, the T-shaped magnetic pole comprising a front part of a magnetic pole contacting with the magnetic gap, an intermediate part of a magnetic pole lying on the front part, and a rear part of a magnetic pole lying on the intermediate part, wherein a width of the front part roughly defines a track width, the rear part has a wider width in a direction of track width than a width of the front part, and the intermediate part contacts with the rear part at an entire width of the rear part at the air bearing surface and has a narrower width at a contacting face with the front part than the width of the rear part.

Abstract translation: 薄膜磁头包括设置在磁头的空气轴承表面上的磁隙，设置成保持磁隙的一对磁极和位于一对磁极之间的线圈，以相交 磁极，其中至少一个磁极由T形磁极组成，T形磁极包括与磁隙接触的磁极的前部，位于磁极的中间部分 在前部的前部和位于中间部的磁极的后部，前部的宽度大致限定轨道宽度，后部在轨道宽度方向上的宽度比宽度宽 前部，并且中间部分在后部的空气轴承表面的整个宽度处与后部接触，并且在与前部的接触面处具有比后部的宽度更窄的宽度。

公开(公告)号：US6056996A

公开(公告)日：2000-05-02

申请号：US358465

申请日：1999-07-22

Applicant: Hiroaki Yoda ,  Atsuhito Sawabe ,  Hitoshi Iwasaki ,  Naoyuki Inoue ,  Akio Hori

Inventor： Hiroaki Yoda ,  Atsuhito Sawabe ,  Hitoshi Iwasaki ,  Naoyuki Inoue ,  Akio Hori

IPC: G11B5/31 ,  G11B5/39 ,  B05D5/12

CPC classification number: B82Y25/00 ,  B82Y10/00 ,  G11B5/3929 ,  G11B5/3967 ,  G11B2005/3996 ,  G11B5/3116 ,  G11B5/3163

Abstract: A magnetoresistance effect type head comprises a magnetoresistance effect film having a pair of leads connected thereto and possessing a magnetic field responding part and a pair of upper and lower shield layers having a magnetoresistance effect film nipped therebetween through the medium of a magnetic gap-forming insulating film. This magnetoresistance effect type head satisfies the relations, W.sub.s

Abstract translation: 磁阻效应型头包括具有连接到其上的一对引线并具有磁场响应部分的磁阻效应膜，以及一对具有磁阻效应膜的上下屏蔽层，其间通过磁隙形成绝缘体 电影。 该磁阻效应型磁头满足Ws

公开(公告)号：US5652054A

公开(公告)日：1997-07-29

申请号：US500365

申请日：1995-07-10

Applicant: Akira Kikitsu ,  Katsutaro Ichihara ,  Hitoshi Iwasaki ,  Atsuhito Sawabe

Inventor： Akira Kikitsu ,  Katsutaro Ichihara ,  Hitoshi Iwasaki ,  Atsuhito Sawabe

IPC: G11B5/64

CPC classification number: G11B5/653 ,  G11B5/656 ,  Y10S428/90 ,  Y10T428/256

Abstract: This invention provides a magnetic recording medium having a magnetic thin film made of magnetic metal grains and a nonmagnetic matrix, wherein the hardness of the nonmagnetic matrix is larger than that of the magnetic metal grains, the magnetic metal grains have shape magnetic anisotropy and magneto-crystalline anisotropy, and in the nonmagnetic matrix the content of a magnetic metal element in a central portion between the magnetic metal grains is 20 atomic % or less. This invention also provides a magnetic recording/reproduction apparatus including a magnetic recording medium consisting of a nonmagnetic matrix, which is continuously present in the direction of film thickness and the in-plane direction of a magnetic thin film, and magnetic metal grains held in the nonmagnetic matrix, and a magnetic head for reproducing a signal from the magnetic recording medium by using a resistance change caused by a magnetic field.

Abstract translation: 本发明提供一种具有由磁性金属颗粒和非磁性基体制成的磁性薄膜的磁记录介质，其中非磁性基体的硬度大于磁性金属颗粒的硬度，磁性金属颗粒具有磁各向异性和磁 - 晶体各向异性，在非磁性基体中，磁性金属颗粒之间的中心部分的磁性金属元素的含量为20原子％以下。 本发明还提供一种磁记录/再现装置，其包括磁性记录介质，该磁记录介质由薄膜厚度方向和磁性薄膜的面内方向连续存在的非磁性矩阵组成，并且磁性金属颗粒保持在 非磁性矩阵，以及用于通过使用由磁场引起的电阻变化来再现来自磁记录介质的信号的磁头。

公开(公告)号：US5110405A

公开(公告)日：1992-05-05

申请号：US363788

申请日：1989-06-09

Applicant: Atsuhito Sawabe ,  Tadao Inuzuka

Inventor： Atsuhito Sawabe ,  Tadao Inuzuka

IPC: C01B31/06 ,  C30B25/00 ,  C30B25/10 ,  C30B29/04

CPC classification number: C30B25/00 ,  C30B25/105 ,  C30B29/04 ,  Y10S117/90

Abstract: A method of manufacturing single-crystal diamond particles, according to the present invention, comprises the steps of introducing a reaction gas containing at least one organic compound into a reaction vessel having an anode and a cathode, producing a plasma by DC discharge caused between the anode and the cathode, and vibrating inorganic single-crystal particles in the plasma and depositing single-crystal diamond on the surface of the single-crystal particles. According to the method of the present invention, single-crystal diamond particles can be manufactured at high growth rate and with excellent reproducibility.

Abstract translation: 根据本发明的制造单晶金刚石颗粒的方法包括以下步骤：将含有至少一种有机化合物的反应气体引入具有阳极和阴极的反应容器中，通过在 阳极和阴极，并在等离子体中振动无机单晶颗粒，并在单晶颗粒的表面上沉积单晶金刚石。 根据本发明的方法，可以以高生长速度和优异的再现性制造单晶金刚石颗粒。

公开(公告)号：US4740263A

公开(公告)日：1988-04-26

申请号：US724271

申请日：1985-04-17

Applicant: Yoshio Imai ,  Atsuhito Sawabe

Inventor： Yoshio Imai ,  Atsuhito Sawabe

IPC: C30B25/00 ,  C23C16/27 ,  C30B25/02 ,  C30B25/10 ,  C30B29/04 ,  C30B25/06

CPC classification number: C23C16/278 ,  C23C16/271 ,  C30B25/02 ,  C30B25/105 ,  C30B29/04 ,  Y10S117/905

Abstract: A process for preparing a diamond thin film by an electron assisted chemical vapor deposition (EACVD) is disclosed, in which diamond crystal nuclei are caused to form and grow to a thin film on a heated plate substrate under electron bombardments in an atmosphere of a mixed gas of hydrogen and a hydrocarbon in a reduced pressure. A Boron doped p-type diamond semiconductor is prepared by an addition of a trace amount of diborane in the mixed gas of the hydrogen and the hydrocarbon in said EACVD.

Abstract translation: 公开了一种通过电子辅助化学气相沉积（EACVD）制备金刚石薄膜的方法，其中使金刚石晶核在电子轰击下在混合的气氛中在加热的板基底上形成并生长成薄膜 氢气和烃的减压气体。 硼掺杂的p型金刚石半导体通过在所述EACVD中的氢和烃的混合气体中加入痕量的乙硼烷来制备。