COMPUTER PROGRAM AND METHOD FOR VERIFYING CONTAINER OF MATERIAL TO BE DISPENSED
    14.
    发明申请
    COMPUTER PROGRAM AND METHOD FOR VERIFYING CONTAINER OF MATERIAL TO BE DISPENSED 有权
    用于验证要分配的材料容器的计算机程序和方法

    公开(公告)号:US20160159509A1

    公开(公告)日:2016-06-09

    申请号:US14559423

    申请日:2014-12-03

    Abstract: A system for verifying a container of a material before the material is transferred to a process. The system includes a conduit that extends through a mouth of the container. The conduit is supported by an arm that moves between a first position in which the conduit extends through the mouth, and a second position in which the conduit is removed and moved away from the mouth. A reading device extracts information about the container from an information storage element. A computer program receives input regarding the extracted information, receives input regarding the process, and determining whether the container is correct for the process. The program prevents the arm from moving to the first position, and only if the container is determined to be correct does the program allow the arm to move to the first position so that the material can be transferred.

    Abstract translation: 一种用于在将材料转移到过程之前验证材料的容器的系统。 该系统包括延伸穿过容器口部的导管。 导管由臂支撑,臂在其中管道延伸穿过嘴的第一位置和第二位置之间移动,在第二位置,导管被移除并远离口。 读取装置从信息存储元件提取关于容器的信息。 计算机程序接收关于提取的信息的输入,接收关于处理的输入,以及确定容器是否对于处理是正确的。 该程序防止臂移动到第一位置,并且只有当容器被确定为正确时,程序允许臂移动到第一位置,使得材料可以被传送。

    Apparatus and method for thin wafer transfer
    15.
    发明授权
    Apparatus and method for thin wafer transfer 有权
    薄晶片传输的装置和方法

    公开(公告)号:US09349643B2

    公开(公告)日:2016-05-24

    申请号:US14229310

    申请日:2014-03-28

    Abstract: A wafer transfer assembly and method of using the assembly to transfer device wafers between processing tools in a manufacturing process are described herein. The assembly comprises a wafer transfer disk, an end effector configured to receive and support the wafer transfer disk, and an elongated handle extending from the end effector. The wafer transfer disk comprises a wafer-engaging surface configured to support a debonded device wafer placed on the wafer transfer assembly with the device surface adjacent the wafer-engaging surface. The wafer-engaging surface has non-stick properties, and yields a low bonding strength interface between the wafer-engaging surface and device surface. The resulting transfer stack can be transported to other processing tools for additional processing of the debonded device wafer, followed by separating the debonded device wafer and the wafer transfer disk without damaging the device wafer.

    Abstract translation: 这里描述了晶片转移组件和在制造过程中使用组件在处理工具之间转移装置晶片的方法。 组件包括晶片转移盘,配置成接收和支撑晶片转移盘的端部执行器,以及从端部执行器延伸的细长手柄。 晶片转移盘包括晶片接合表面,其被配置为支撑位于晶片转移组件上的脱粘器件晶片,其中器件表面邻近晶片接合表面。 晶片接合表面具有不粘性,并且在晶片接合表面和器件表面之间产生低粘结强度界面。 所得到的转移堆叠可以被运送到其他处理工具以用于附加处理脱粘的器件晶片,随后分离脱粘器件晶片和晶片转移盘而不损坏器件晶片。

    MULTI-SIZE ADAPTABLE SPIN CHUCK SYSTEM
    16.
    发明申请
    MULTI-SIZE ADAPTABLE SPIN CHUCK SYSTEM 审中-公开
    多尺寸适配旋钮系统

    公开(公告)号:US20150336127A1

    公开(公告)日:2015-11-26

    申请号:US14716143

    申请日:2015-05-19

    Abstract: A novel interchangeable spin chuck system is provided that allows the user to quickly change substrate sizes and spin chuck styles without any extra tools. This system has a two-piece design and overcomes many of the drawbacks of previous spin chuck designs, such as difficulty in seating the spin chuck and ensuring that the spin chuck is at a consistent flatness and height. Furthermore, this spin chuck system allows the spin chucks to be manufactured at a lower cost. Thus, rather than restricting users to “make do” with incorrect spin chucks due to budget limitations, this economical design gives users access to a wider range of spin chuck sizes and styles.

    Abstract translation: 提供了一种新颖的可互换旋转卡盘系统,其允许用户快速地改变基板尺寸和旋转卡盘样式,而无需任何额外的工具。 该系统具有两件式设计,并克服了以前的旋转卡盘设计的许多缺点,例如难以安置旋转卡盘并确保旋转卡盘处于一致的平坦度和高度。 此外,该旋转卡盘系统允许以更低的成本制造旋转卡盘。 因此,由于预算的限制,这种经济的设计使用户不必限制使用错误的旋转卡盘“做”,用户可以访问更广泛的旋转卡盘尺寸和样式。

    Assist layers for EUV lithography
    17.
    发明授权
    Assist layers for EUV lithography 有权
    辅助层进行EUV光刻

    公开(公告)号:US08968989B2

    公开(公告)日:2015-03-03

    申请号:US13682050

    申请日:2012-11-20

    Abstract: The present invention provides novel methods of fabricating microelectronics structures, and the resulting structures formed thereby, using EUV lithographic processes. The method involves utilizing an assist layer immediately below the photoresist layer. The assist layer can either be directly applied to the substrate, or it can be applied to any intermediate layer(s) that may be applied to the substrate. The preferred assist layers are formed from spin-coatable, polymeric compositions. The inventive method allows reduced critical dimensions to be achieved with improved dose-to-size ratios, while improving adhesion and reducing or eliminating pattern collapse issues.

    Abstract translation: 本发明提供了使用EUV光刻工艺制造微电子结构的新颖方法,以及由此形成的所得结构。 该方法包括利用光致抗蚀剂层正下方的辅助层。 辅助层可以直接施加到基底上,或者可以将其施加到可施加到基底上的任何中间层。 优选的辅助层由可旋涂的聚合物组合物形成。 本发明的方法允许通过改进的剂量 - 尺寸比来实现减小的临界尺寸,同时改善粘附性并减少或消除图案塌陷问题。

    ON-TRACK REVERSE LITHOGRAPHY TO THIN MASK FOR FABRICATION OF DARK-FIELD FEATURES
    18.
    发明申请
    ON-TRACK REVERSE LITHOGRAPHY TO THIN MASK FOR FABRICATION OF DARK-FIELD FEATURES 审中-公开
    ON-TRACK REVERSE LITHOGRAPHY TO THIN MASK FOR BUGICATION OF DARK-FIELD FEATURES

    公开(公告)号:US20140225252A1

    公开(公告)日:2014-08-14

    申请号:US13765429

    申请日:2013-02-12

    Abstract: A reversal lithography approach is disclosed in which dark-field features are created on microelectronic substrates using bright-field lithography processes and a pattern reversal method. A wafer stack having a patterned imaging layer is provided that has a plurality of features formed thereon. A pattern reversal composition is applied to the patterned imaging layer overcoating the features, followed by wet etch-back of partially cured portions of the composition to expose the tops of the features. The imaging layer is then removed resulting in reversal of the pattern into the pattern reversal composition. This reversed pattern is then transferred into subsequent layers

    Abstract translation: 公开了一种反转光刻方法,其中使用亮场光刻工艺和图案反转方法在微电子基板上产生暗场特征。 提供具有图案化成像层的晶片叠层,其具有形成在其上的多个特征。 将图案反转组合物施加到覆盖特征的图案化成像层上,随后湿法蚀刻组合物的部分固化部分以暴露特征的顶部。 然后去除成像层,导致图案反转成图案反转组合物。 然后将该反转图案转移到随后的层中

    HIGHLY SOLUBLE CARBON NANOTUBES WITH ENHANCED CONDUCTIVITY
    19.
    发明申请
    HIGHLY SOLUBLE CARBON NANOTUBES WITH ENHANCED CONDUCTIVITY 有权
    具有增强电导率的高度可溶性碳纳米管

    公开(公告)号:US20140138588A1

    公开(公告)日:2014-05-22

    申请号:US14164156

    申请日:2014-01-25

    CPC classification number: C09D11/52 B82Y30/00 B82Y40/00 C01B32/174 H01B1/24

    Abstract: New methods for preparing carbon nanotube films having enhanced properties are provided. The method broadly provides reacting carbon nanotubes (CNTs) and compounds comprising a polyaromatic moieties in the presence a strong acid. During the reaction process, the polyaromatic moieties noncovalently bond with the carbon nanotubes. Additionally, the functionalizing moieties are further functionalized by the strong acid. This dual functionalization allows the CNTs to be dispersed at concentrations greater than 0.5 g/L in solution without damaging their desirable electronic and physical properties. The resulting solutions are stable on the shelf for months without observable bundling, and can be incorporated into solutions for printing conductive traces by a variety of means, including inkjet, screen, flexographic, gravure printing, or spin and spray coating.

    Abstract translation: 提供了制备具有增强性能的碳纳米管膜的新方法。 该方法广泛地提供了在存在强酸的情况下使碳纳米管(CNT)和包含多芳族部分的化合物。 在反应过程中,多芳族部分与碳纳米管非共价结合。 此外,官能化部分进一步由强酸官能化。 这种双官能化允许CNT在溶液中以大于0.5g / L的浓度分散,而不损害其所需的电子和物理性质。 所得到的溶液在搁板上稳定几个月,不需要可观察到的捆扎,并且可以通过各种方式(包括喷墨,筛网,柔性版,凹版印刷或旋涂和喷涂)结合到用于印刷导电迹线的溶液中。

    CVD-FREE, SCALABLE PROCESSES FOR THE PRODUCTION OF SILICON MICRO- AND NANOSTRUCTURES
    20.
    发明申请
    CVD-FREE, SCALABLE PROCESSES FOR THE PRODUCTION OF SILICON MICRO- AND NANOSTRUCTURES 有权
    无CVD,生产硅微结构和纳米结构的可扩展工艺

    公开(公告)号:US20140124898A1

    公开(公告)日:2014-05-08

    申请号:US14076094

    申请日:2013-11-08

    Abstract: Manufacturing-friendly and scalable methods for the production of silicon micro- and nanostructures, including silicon nanotubes, are described. The inventive methods utilize conventional integrated circuit and MEMS manufacturing processes, including spin-coating, photolithography, wet and dry silicon etching, and photoassisted electrochemical etch processes. The invention also provides a novel mask, for maximizing the number of tubes obtained per surface area unit of the silicon substrate on which the tubes are built. The resulting tubes have thick and straight outer walls, as well as high aspect ratios.

    Abstract translation: 描述了用于生产硅微纳米结构(包括硅纳米管)的制造友好且可扩展的方法。 本发明的方法利用传统的集成电路和MEMS制造工艺,包括旋涂,光刻,湿和干硅蚀刻以及光辅助电化学蚀刻工艺。 本发明还提供了一种新颖的掩模,用于最大化在其上构建管的硅衬底的每表面积单位获得的管的数目。 所得到的管具有厚而直的外壁以及高纵横比。

Patent Agency Ranking